the challenge of metrology in the 450mm wafer transition process

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Page 1 © Fraunhofer IISB Conference: 450mm in Europe Quo Vadis? October 7, 2009. Martin Schellenberger, Lothar Pfitzner. Fraunhofer IISB. THE CHALLENGE OF METROLOGY IN THE 450MM WAFER TRANSITION PROCESS

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Page 1: THE CHALLENGE OF METROLOGY IN THE 450MM WAFER TRANSITION PROCESS

Page 1

© Fraunhofer IISB

Conference: 450mm in Europe – Quo Vadis? October 7, 2009.Martin Schellenberger, Lothar Pfitzner. Fraunhofer IISB.

THE CHALLENGE OF METROLOGYIN THE 450MM WAFER TRANSITION PROCESS

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Group / Department, Date© Fraunhofer IISB

THE CHALLENGE OF METROLOGYIN THE 450MM WAFER TRANSITION PROCESS

About Fraunhofer

Metrology in Semiconductor Manufacturing

450 mm Metrology Tools

Potential Next Steps

Summary & Outlook

Page 3: THE CHALLENGE OF METROLOGY IN THE 450MM WAFER TRANSITION PROCESS

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The Challenge of Metrologyin the 450mm Transition Process© Fraunhofer IISB

The Fraunhofer Gesellschaft

60 institutes at 40 locations

17.000 employees

1,5 billion € budget

Founded in 1949 in Munich, Germany, the Fraunhofer-Gesellschaft with its numerous institutes is the leading establishment of applied research in Germany.

The Fraunhofer-Gesellschaft conducts research according to the needs of the market in the domestic and international R&D marketplace.

Fraunhofer Profile Microelectronics

Production

Information and CommunicationTechnology

Materials and Components

Life Sciences

Surface Technology and Photonics

Page 4: THE CHALLENGE OF METROLOGY IN THE 450MM WAFER TRANSITION PROCESS

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The Challenge of Metrologyin the 450mm Transition Process© Fraunhofer IISB

Technological Profile of IISBFraunhofer IISB: Departments and Fields of Activity

Semiconductor Technology» From Crystals to Devices «

Power Electronics and Mechatronics» From Devices to Systems «

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Group / Department, Date© Fraunhofer IISB

THE CHALLENGE OF METROLOGYIN THE 450MM WAFER TRANSITION PROCESS

About Fraunhofer

Metrology in Semiconductor Manufacturing

Metrology in Production

Production Ramp curve

450 mm Metrology Tools

Potential Next Steps

Summary & Outlook

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The Challenge of Metrologyin the 450mm Transition Process© Fraunhofer IISB

Metrology in Nanotechnologies

Understanding and controlling dimensions, materials properties, and defects towards atomic level is required (e.g. 1.5 nm HfSiOx layer)

Improving capabilities of metrology and analysis equipment (e.g. 3D at atomic scale) poses huge challenges

Semiconductor Manufacturing

A series of processes with up to 1000 processing steps

A series of interposed metrology and inspection steps

800

600

400

200

0

1009080708000

6000

4000

2000

0

Scatt

Yie

ld (

a.u

.)

100908070 Energy (keV)

4000

-400

run61500.2d.data.tile.energy@x=86-90.ascii

1.5 nm 1nm

HfSiOx SiO2 Si wafer

X10

O Si Hf800

600

400

200

0

1009080708000

6000

4000

2000

0

Scatt

Yie

ld (

a.u

.)

100908070 Energy (keV)

4000

-400

run61500.2d.data.tile.energy@x=86-90.ascii

1.5 nm 1nm

HfSiOx SiO2 Si wafer

1.5 nm 1nm

HfSiOx SiO2 Si wafer

X10

O Si Hf

Introduction

Analysis at atomic scale performed with XTEM @ CNR & MEIS @

Daresburg Laboratory (USAL) (ANNA –project FP6 EC contract 026134-RII3)

HfSiOx: 1.4 ± 0.5 nm 2.1 ± 0.5 nm SiO2: 1.1 ± 0.5 nm 1.1 ± 0.5 nm

5 nm

HfSiOx SiO2

Metrology for semiconductor manufacturing is the basis of preparatory know-how, of off-line, in-line and in situ-characterization, and advanced process control.

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The Challenge of Metrologyin the 450mm Transition Process© Fraunhofer IISB

n-well p-well

n

Via

p

crackshort

open

contamination

p+

particle

COP

layer thickness

Metal 1

Metal 2overlay

p

Interconnects

n+

particle

ESD Damage

Si crystal:stacking faults, contamination, stress, COP

interfaces : roughness , state density, charges

alignment

STI

gate

LDD

spacer

S and D implant

PDM

W Plug

IMD

metal

passivation

5

packageFE

OL

BE

OL contact

contact

well and Vt

pro

cess

flo

w

Defect and Failure Scenario of an IC

Introduction

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The Challenge of Metrologyin the 450mm Transition Process© Fraunhofer IISB

Metrology for Semiconductor ManufacturingP

roce

ss L

ev

el/

Yie

ld Process Integration Pilot Mass Production

ProcessTuning

Process StabilizationProduct Production

ProcessSelection

ProcessCreation

Ideal Process and Yield Learning Curve

Technology Transfer

Transfer

Actual Process and Yield Learning Curve

So

urc

e: G

iich

i In

ou

e,T

osh

iba

Sem

ico

nd

uct

or

Metrology in Semiconductor Manufacturing

Metrology required as the basis of preparatory know-how, of off-line, in-line and in situ-characterization, and advanced process control.

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Group / Department, Date© Fraunhofer IISB

THE CHALLENGE OF METROLOGYIN THE 450MM WAFER TRANSITION PROCESS

About Fraunhofer

Introduction

Metrology in Semiconductor Manufacturing

450 mm Metrology Tools

Impact of 450 mm Wafer Diameter on Equipment and Metrology

Potential Development Topics for 450mm Metrology Tools

Priorities in 450 mm?

Potential Next Steps

Summary & Outlook

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The Challenge of Metrologyin the 450mm Transition Process© Fraunhofer IISB

Diameter 300 mm 450 mm

Thickness 775 µm 925 µm

Area 706 cm² 1589 cm²

Impacted Areas Focus Items

Processes Process uniformity, contamination, thermal effects/ uniformity, (cleaning, polishing, deposition, etch, anneal, ..)

Lithography Increase of area by 2.25 times requires high performance –high speed litho

Handling Deformation (stress), transport issues, wafer translation (large distances, acceleration and settling times increase, vertical drift along the wafer)

Metrology Stages and handling, mapping capabilities, increase of area by 2.25 times requires high performance – high speed metrology (inspection), dimensional change due to thermal expansion coefficient, …

Data Management Amount of data, data quality, …

Impact of 450 mm Wafer Diameter on Equipment and Metrology

450 mm Metrology Tools

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The Challenge of Metrologyin the 450mm Transition Process© Fraunhofer IISB

Stand-alone metrology

Improved scatterometry (3D)

Particle measurement, contamination monitoring

Stress measurement at the nanoscale

Metrology tools for characterization of dielectrics, ultra-thin layers and interfaces (composition, morphology, geometric dimensions)

Reference materials

Integrated metrology and sensors

Sensors for improved equipment characterization and qualification

Sensors for characterization of plasma, litho, and CMP processes

Metrology/sensors as enabler for APC

Potential Development Topics for 450mm Metrology Tools (1/2):

450 mm Metrology Tools

Collected early 2009 from EU metrology companies

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The Challenge of Metrologyin the 450mm Transition Process© Fraunhofer IISB

Data process ing and algorithms

Algorithms for the measurements of complex stacks and features

Models for the analysis of ultra-thin layers including interface and quantum effects

Data reduction algorithms for correlated sampling approach and calculation of quality data

Model for quantification of precision trade-off of IM to stand-alone metrology vs. improved sampling rate and time based information

Automation

Modular approach for automation and software

Benefit expected for 300 mm and 200 mm equipment

Potential Development Topics for 450mm Metrology Tools (2/2):

450 mm Metrology Tools

Collected early 2009 from EU metrology companies

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The Challenge of Metrologyin the 450mm Transition Process© Fraunhofer IISB

450 mm Metrology Tools

metal layerspatterned layers

low-k materialsgate oxide

Key applications

for Integrated Metrology

- CD- overlay - layer thickness- inspection

(macro, defect)

- thickness- uniformity- nitrogen content

and profile

- filling quality- grain size- crystallographic

texture

- thickness- refractive index- porosity- composition- uniformity

Priorities in 450 mm?

To be defined by end-users(target specs, required improvements/ modifications)

May not differ too much from current ones, e.g. NANOCMOS

NANOCMOS funded under EU 6th FP, #507587

450 mm Metrology Tools

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Group / Department, Date© Fraunhofer IISB

THE CHALLENGE OF METROLOGYIN THE 450MM WAFER TRANSITION PROCESS

About Fraunhofer

Introduction

Metrology in Semiconductor Manufacturing

450 mm Metrology Tools

Potential Next Steps

Network in Metrology

450 mm Metrology Platform

Support and R&D Activities

Summary & Outlook

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The Challenge of Metrologyin the 450mm Transition Process© Fraunhofer IISB

ROUSSET

MIGDAL HAEMEK

VILLACH

BUDAPEST

ERLANGE

N

JENAAACHEN

LÜBECK

LEUVEN

WITNEY OXFORDSHIRE

CROLLES

BERNIN

DRESDEN

EINDHOVEN

WIENER

NEUSTADT

GRENOBLE

= supplier

= user

= R & D

TOULOUSE

BERLIN

PARIS

TEL AVIV

JERUSALEM

WIEN

TRENTO

BOLOGNAMILANO

ROMA

ATHENSPATRAS

DUBLIN

SALFORD

DORTMUND

ZÜRIC

HUNTERPREMSTÄTTE

N

AVEZZAN

O

MAINZ

ST. FLORIAN

AMSTERDAM

LANDSHU

TMÜNCHEN

KREFEL

D

KARLSRUH

E

HAMBURG

RENDSBURG

NIJMEGEN

BELFASTVTT

NOVARA

AVEZZAN

O

AGRATE

www.semiconductors .co.uk

Potential Next Steps

Metrology is a European strength!

Network in Metrology

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The Challenge of Metrologyin the 450mm Transition Process© Fraunhofer IISB

Potential Next StepsContributions by IISB450mm Platforms for Metrology Development Fraunhofer ready to provide

Stand-alone metrology: Realization of a 450 mm metrology platform, which

enables the development of individual core metrology systems for 450 mm

metrology requirements without the need to supply overhead wafer handling

equipment, open automation, and fab data management.

Integrated metrology and sensors: Realization of test beds to realize common

standardized integration and automation strategies for the development of IM

and sensors without the need to supply overhead automation, and fab data

management.

R&D Activ ities for 450 mm Metrology Fraunhofer ready to start

IISB metrology and expertise applicable to 450 mm: wave front sensors,

scatterometry, ellipsometry, digital imaging and processing, defect inspection, x-ray

techniques

Equipment qualification/development: organic/inorganic contamination, thermo

desorption, TXRF, vapor phase composition

Sensor development for stand-alone and integrated metrology, virtual metrology

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The Challenge of Metrologyin the 450mm Transition Process© Fraunhofer IISB

Contributions by IISBPotential Next Steps

Support Activ ities for 450 mm Metrology Equipment Development

Production of test wafers and reference samples, e.g. with controlled deposition of

contaminants and defects

Cleaning and polishing (double and single side)

Definition of standardized wafer for 450 mm wafer exchange amongst R&D sites

using accepted specifications

Set-up of distributed processing network including logistics for 450 mm

Development of standards

Collaboration Fraunhofer ready to coordinate

Intel/Samsung/TSMC, SEMATECH/ISMI, Albany, Taiwan, ...

Link to expertise in FP7/ENIAC/... projects (benefit for 300 mm Prime, 450 mm), e.g.

IMPROVE, ...

„Flying Wafer“ for 450mm, also on a world-wide scale

Europe acting as focal point for global developments in (450mm) metrology

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Group / Department, Date© Fraunhofer IISB

THE CHALLENGE OF METROLOGYIN THE 450MM WAFER TRANSITION PROCESS

About Fraunhofer

Introduction

Metrology in Semiconductor Manufacturing

450 mm Metrology Tools

Potential Next Steps

Summary & Outlook

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The Challenge of Metrologyin the 450mm Transition Process© Fraunhofer IISB

Metrology is the onset of the food chain

Currently, appropriate modification of existing metrology tools is

sufficient for starting 450 mm development

Support of equipment suppliers in the transition to 450 mm and towards

novel metrology challenges

IISB ready to provide 450 mm atmospheric stage and 450 mm vacuum

stage with (standardized?) sensor and metrology components

accommodation

Integration of metrology will be continued by IISB

Global collaboration is mandatory in research and with industry

Summary & Outlook