thales long wave qwip thermal imagers...qwip 2006 sri lanka vega-lw-rm4: 384×288 25µm pitch iddca...

THALES Research & Technology

I T & S A e r o s p a c e D e f e n c e

Thales Long Wave QWIP Thermal ImagersE. Costard, P. Bois, A. Nedelcu, X. Marcadet (TRT)

A. Manissadjian (Sofradir)

O. Cocle (Thales Optronique Fr) , R. Craig (Thales Optronics UK)

1) III-V lab presentation2) How to set up a QWIP detector 3) QWIP Thermal imagers at Thales

Catherine MP and SIRIUS IDDCACatherine XP and VEGA IDDCA

4) Operating temperatureConclusion

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What is Alcatel Thales III-V Lab?

►Web site 3-5lab.fr

JV organizationAlcatel – Thales contract signed on July 1st, 2004

A common Laboratory of 100 R&D professionals Performing industrial R&T on III-V technology

Optoelectronic and microelectronic materials, devices and circuitsFrom basic research to industrial developmentA capacity for prototyping and small scale production

For complementary Alcatel / Thales applicationsHigh bit rate Optical Fibre and Wireless TelecomMicrowave and Optronic systems for Defence, Security and Space

Open to external customers

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Two-site implantation

Alcatel Research and InnovationMarcoussis

Thales Research and Technology Palaiseau

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Epitaxial growth of III-V semiconductors Multi-wafers MBE, GS-MBE, MO-VPE reactors Complex hetero-structures based on GaAs, InP, SiC, GaSb…substrates

AlGaN/GaN HEMT on SiC substrates

Buried EO modulator

GS-MBE reactor

III-V Semiconductors Epitaxy

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Clean-Room Device Processing

Clean room device processingMicroelectronic technologies: lithography, metal and dielectric material deposition and etching, …Microwave and fast digital devices and circuits : InP HBTs, GaN HEMT, …Opto-electronic devices (lasers, modulators, photo-detectors, …)

AlGaN/GaN HEMTs

Photoniccrystals

QWIP FPA

GaInAsphotodiodes

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Measurement, Simulation, Design

Measurement, simulation and designPhysical modelling of microelectronic and optoelectronic devicesLinear and non-linear equivalent circuits Microwave and fast digital circuit design and simulation

Electro-thermalmodelling

Power transistors and HPA MMIC design

40Gb/s (and above) InP HBT ICs

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Modules and DemonstratorsModule and sub-system demonstrators

Optoelectronic modules demonstrators (40Gb/s transceivers, …) Microwave amplifiers demonstratorsOperational reliability evaluations

30W S-band hybrid HPA

60GHz UTCphotodiode

Reliability test bench

Hybridization & FPAs characterization

18GHz direct modulation laser diode

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New Building & Facilities(640x512 QWIP Phoenix picture)

New front end for QWIP R&D and Production

250m² class 1000/100 dedicated clean room

•Moving in July 2005

•Fully operational since March 2006

New RIBER 49 MBE equipment

5x3 inch or 3x4 inch wafers per platen

Uniformity & Reproducibility fully compatible with QWIP production

Faster Transfer to Epitaxial Layer Suppliers

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THALES LW QWIP Camera: CATHERINE-XP

TRT QWIP Product

384x288 ; pitch 25 µm

30 arrays on 3 inch wafer Thales Optronique (France)

VEGA-LW

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THALES LW QWIP Camera: CATHERINE-MP

Thales Optronics (UK)

TRT QWIP Product

640x512 ; pitch 20 µm

16 arrays on 3 inch wafer

SIRIUS-LW

Test cell for E&O QWIP measurement

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FPA Performance: E&O inputs

1.2

0.8

0.4

0.0Spec

tral

resp

onsi

vity

109876Wavelength (µm)

Peak: 8.6 µmFWHM: 0.9 µm

0.4

0.3

0.2

0.1

0.0

Peak

resp

onsi

vity

(A/W

)

-2.5 -2.0 -1.5 -1.0 -0.5 0.0Bias (V)

0.6

0.4

0.2

0.0

Noi

se g

ain

-2.5 -2.0 -1.5 -1.0 -0.5 0.0Bias (V)

10-12

10-11

10-10

10-9

Dar

k cu

rren

t @ 7

7 K

(A)

-2.5 -2.0 -1.5 -1.0 -0.5 0.0Bias (V)

Intrinsic QWIP E&O Characteristics measured on a 23µm pixel

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FPA Performance: Model outputsROIC: pitch 25µm ; C=18.5Me- ; gain=160nV/e- ; noise=160µV

Tbb=300K ; f/2.7 ; ∆T=+50K ; pixel 23.5µm

90

80

70

60

50

40

30

20

10

0

NET

D (

mK

)

-2.0 -1.6 -1.2 -0.8 -0.4 0.0Bias (V)

Tint > 5 ms

Tint < 5 ms

60 K65 K70 K73 K75 K77 K

External Quantum Efficiency is definitively not a relevant parameter for QWIP

40

35

30

25

20

15

10

5

0R

espo

nsiv

ity (m

V/K

)-2.0 -1.6 -1.2 -0.8 -0.4 0.0

Bias (V)

0.6

0.5

0.4

0.3

0.2

0.1

0.0

60 K65 K70 K73 K75 K77 K

R-QWIP

FPA set point for CATHERINE-XP

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SIRIUS-LW-K548: 640×512 20µm pitch IDDCA

Compact dewar designsmall diameter feedthru ceramics (Ø40mm).20 mm height cold shieldaperture up to f/2.2 applications two 21-pin connectors electrical interface

20µm pitch ROIC (Sofradir)four gains (10.3Me- = ×1, ×1.3, ×2, ×4)1/2/4 outputs; IWR; 120Hz frame rate enabling 2×2 microscanning for SXGA format (1280×1024)Image invert/revert/inverse; Random windowingSkimming mode

0.75W K548 by RicorDimensions 142 mm height × 77 mm widthTotal IDDCA weight < 0.65 kg (1.43 lb)

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SIRIUS-LW-K548: E&O performance @ 73KTfpa =73K; f/2.2; gain 1 (10.3Me-); 120Hz; 20°C blackbody Ti = 4ms for +50K instantaneous dynamic range20-35°C Sensitivity: Mean = 23mV/K; σ = 8.5% (No FOV correction)NETD : Mean = 41 mK; σ = 10.9% (FOV corrected)Operability = 99.9% (NETD<2×mean); no cluster of size > 3 pixels

Dead map pixels

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SIRIUS-LW-K548: ready for production

1st Prototypes in 2005 for CATHERINE-MP by Thales Optronics (TOL)affordable and production-ready alternative offered for fighting vehicles and tanks for future UK MOD programmes provides outstanding SXGA (1280×1024) format image quality with the use of microscan

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VEGA-LW-RM4: 384×288 25µm pitch IDDCA

Developed for Catherine-XP FLIR (Thales Optronique)

Highly compact (3 kg)Power consumption and heat dissipation to be minimized

Working point around 75Ksatisfying tradeoff with NETD/detection rangeLowest power consumption & thermal behavior

An improved RM4-7i microcooler (Thales Cryogenics)

Upgrade of RM5-7i, with higher efficiency for lower power consumption (and heat dissipation)

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VEGA-LW-RM4: 384×288 25µm pitch IDDCA

Latest dewar designsmall diameter feedthru ceramics (Ø32mm) for optimizing the compactness of the detector.cold shield up to 20 mm heightaperture up f/2 applications

ISC0208 ROIC (Indigo)four gains (18.5Me-, 13.9Me-, 9.2Me-, 4.6Me-)1/2/4 outputs; IWR>150Hz frame rate enabling 2×2 microscanning for full TV CCIR format (768×575)

0.7W RM4-7i by Thales@ 20°C: CDT < 3 minutes; Preg < 9Wac

Dimensions < 126 mm height × 73.7 mm widthTotal IDDCA weight < 0.55 kg (1.21 lb)

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VEGA-LW: E&O performance @ 75K

Tfpa =75K; f/2.68; gain 2 (13.9Me-); 120Hz; 20°C blackbody Ti = 4ms for +50K instantaneous dynamic range20-35°C Sensitivity: Mean = 12.3mV/K; σ = 3.51% (No FOV correction)

NETD : Mean = 54 mK; σ = 10.5% (FOV corrected)

Operability = 99.9% (NETD<2×mean)

Dead map pixels

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CATHERINE-XP FLIR by Thales Optonique (TOSA)

Full production since 2005 (150 VEGA-LW detectors within 15 months)1000 cameras ordered, Business plan for up to 4000

CV90 (Dutch)

VBL SOURCE (France)

PANDUR (Belgium)

UTASS

VBCI (France)

CATHERINE-XP

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LW QWIP performance vs TFPA in IDDCATi adjusted for +50K instantaneous dynamic range

LW QWIP: Sensitivity versus FPA temperature

134%

100%

80%

119%

15

20

25

30

35

65 66 67 68 69 70 71 72 73 74 75FPA Temperature [K]

20-3

5°C

Sen

sitiv

ity [m

V/K

]

Ti=3.8ms

1.2×Ti

0.82×Ti

1.4×Ti

W F = 10.3Me-f/2.220°CTi for 95% WF @ 70°C

FPA sensitivity in mV/K is proportional to TiBut intrinsic QWIP responsivity is independent on Temperature…………..!

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LW QWIP performance vs TFPA in IDDCA

Ti adjusted for +50K instantaneous dynamic range50-55mK @ 75K40-45mK @ 73K

LW QWIP: NETD v e rsus FPA te mpe rature

79%

132%

100%

68%25

30

35

40

45

50

55

65 66 67 68 69 70 71 72 73 74 75FPA Temperature [K]

NET

D [m

K]

Ti=3.8ms

1.2×Ti

1.4×Ti

0.82×Ti

WF = 10.3Me-f/2.220°CTi for 95% WF @ 70°C

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CONCLUSION

•LWIR QWIPs : 75K and diffraction limited:

NETD< 40mK

Dynamic range > 100K

Integration Time < 5ms

>100Hz in full TV Format

•New facilities for QWIP array production

•Large format and small pitch in production (VEGA & SIRIUS by SOFRADIR)

•R&D up to the FPA level to Extend QWIP Spectral Range (4µm-18µm)

•QWIP are also Natural candidates for large format dual band / dual color FPAs

(640x512 QWIP Phoenix pictures)

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Influence of the Pixel Design on QWIP Performances

1.2

1.0

0.8

0.6

0.4

0.2

0.0

Nor

mal

ized

spe

ctra

l res

pons

ivity


No grating 2D grating150 µm pixels 0.6

0.5

0.4

0.3

0.2

0.1

0.0

Spec

tral

resp

onsi

vity

(A/W

)109876

Wavelength (µm)

2D grating pixel 20 µm pixel 150 µm

No Grating pixel 150µm

Bias=1.2V

FWHM Widerwithout

Optical coupling pattern

Peak Responsivity HigherOn Large Pixels

With Optical coupling pattern

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LWIR QWIP spectral response

Peak = 8.5µm ±0.1µmFWHM < 1.0µm

0102030405060708090

100

6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0

Wavelength [µm ]A

bsol

ute

trans

mis

sion

[%]

0.4

0.3

0.2

0.1

0.0

Res

pons

ivity

(A/W

)

10.09.08.07.06.0Wavelength (µm)

LWIR QWIPPixel = 19 µm

Bias=1.2V

Measure on IDDCA, after thinning & AR coating

& with IDDCA window

Measure on QWIP wafer, before thinning & AR coating

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QWIPs cover the full LWIR spectrum

1.2

1.0

0.8

0.6

0.4

0.2

0.0

Spec

tral

resp

onsi

vity

(a.u

)

2018161412108

Wavelength (µm)

610-5

2

46

10-4

2

46

10-3

2

Cur

rent

den

sity

(A /

cm2 )

-2.0 -1.6 -1.2 -0.8

Bias (V)

Dark current 45 K 50 K

Optical current

TBB = 280 K, F/2

λC = 15.1 µm

ROIC ISC0208 : 384x288 ; pitch 25µm

Tbb=280K; f/2 (diffraction limited)

dynamics = +30°C

Pixel < 30µm& optimized 2D grating

FPA performance modeling:

Tdet=50K ; λc=15.1µm

NETD = 15 mK

Responsivity = 20 mV/K

Integration Time = 6 mS

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2-D Arrays: Uniformity is more important than D*

12

4

102

4

1002

4

NET

D (m

K)

6 8

1092 4 6 8

10102 4 6 8

10112 4

Détectivité (Jones)

u=0.5%

u=0.2%u=0.1%

u=0.01%

u=0

λpic = 9 µm ; ∆λ = 2 µm pixel = 25 µm ; # = 2 tint= 10 ms ; TB = 300 K

Single Element :Only D* is important

2D Arrays : Uniformity = key factor

2B

2

22

int

2

B

B

B

P*D)#41(

At21u

dTdPP*)D,u(NETD

⋅+

×+×=

Uniformity has to be preserved for each new QWIP quantum design or processing step

27

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doc

umen

t and

any

data

incl

uded

are

the

prop

erty

of T

HAL

ES

.Th

eyca

nnot

bere

prod

uced

, dis

clos

edor

use

dw

ithou

tTH

ALE

S' p

riorw

ritte

nap

prov

al. ©

THAL

ES

2003

. Tem

plat

etrt

coV

6.0.

0

QWIP 2006 Sri Lanka

Internal quantum efficiency: Absorption

0.6

0.5

0.4

0.3

0.2

0.1

0.0

Abs

orpt

ion

201816141210864

Wavelength (µm)

VLWIRLWIR

MWIR

4 typical spectral absorption: αpeak > 25% indeed > 60% for MWIR

The Peak absorption can be adjusted (trade-off with operating Temperature)

Uniformity, stability and affordability guaranteed from MWIR to VLWIR

28

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doc

umen

t and

any

data

incl

uded

are

the

prop

erty

of T

HAL

ES

.Th

eyca

nnot

bere

prod

uced

, dis

clos

edor

use

dw

ithou

tTH

ALE

S' p

riorw

ritte

nap

prov

al. ©

THAL

ES

2003

. Tem

plat

etrt

coV

6.0.

0

QWIP 2006 Sri Lanka

QWIP nearly cover the MWIR spectrum…

1.2

1.0

0.8

0.6

0.4

0.2

0.0

Spec

tral

resp

onsi

vity

(a.u

)

6.05.55.04.54.03.53.0Wavelength (µm)

Indium free 25% In

Spectral shapes suitable for dual color MWIR FPA

…without exotic nor mismatched material (IDDCA performance: Presentation 6206-14)

1200

1000

800

600

400

200

0

-200C

B p

oten

tial (

meV

)6004002000

Width (Angström)

with indium Indium free25µm pixel& optimized 2D grating

29

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doc

umen

t and

any

data

incl

uded

are

the

prop

erty

of T

HAL

ES

.Th

eyca

nnot

bere

prod

uced

, dis

clos

edor

use

dw

ithou

tTH

ALE

S' p

riorw

ritte

nap

prov

al. ©

THAL

ES

2003

. Tem

plat

etrt

coV

6.0.

0

QWIP 2006 Sri Lanka

Dual-Band QWIP FPA demonstrated in 2005

MWIR band LWIR bandResponsivityMean responsivity 10.4 mV/K 13.9 mV/K

σ 8.5% 9.9%

operability at 1.5 x mean value 99.04% 99.04%NETDMean NETD 40 mK 39 mK

σ 17% 16%operability at 2 x mean value 99.5% 99.9%

0.6

0.4

0.2

0.0Spec

tral r

espo

nsiv

ity (A

/W)


Batch1: stage1 stage2Batch2: stage1 stage2

25 µm

No Spectral Cross Talk

Even on small Pixels

Dual Band QWIP FPA:

•256x256 pitch 25µm

•IWR mode

•2 color subframe at 100Hz

Sofradir & TRT are developing

a MWIR / LWIR IDDCA

based on a ISC0208 ROIC

(384x288 pitch 25µm)

30

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doc

umen

t and

any

data

incl

uded

are

the

prop

erty

of T

HAL

ES

.Th

eyca

nnot

bere

prod

uced

, dis

clos

edor

use

dw

ithou

tTH

ALE

S' p

riorw

ritte

nap

prov

al. ©

THAL

ES

2003

. Tem

plat

etrt

coV

6.0.

0

QWIP 2006 Sri Lanka

In House FPA Capability (1/2)

Pulse Instrument system 7700• 4 Preamplifiers • 14 bits A/D (bandwidth ≥ 30Mhz)• 8 clock drivers and 8 bias generators• Easy pattern generation

384x288 QWIP FPAISC0208 ROIC from Indigo

Pitch 25µm

Indium Bump Array

New building Block: hybridization

For Research & Development

Tests in lab dewar (He or LN2)

31

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doc

umen

t and

any

data

incl

uded

are

the

prop

erty

of T

HAL

ES

.Th

eyca

nnot

bere

prod

uced

, dis

clos

edor

use

dw

ithou

tTH

ALE

S' p

riorw

ritte

nap

prov

al. ©

THAL

ES

2003

. Tem

plat

etrt

coV

6.0.

0

QWIP 2006 Sri Lanka

In House FPA Capability (2/2)LWIR QWIP design: λc = 9 µm ; 384x288, pitch 25 µm

•6 non connected pixels•9 saturated pixels•No Cluster

T=80K without & with 2 point correction

32

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doc

umen

t and

any

data

incl

uded

are

the

prop

erty

of T

HAL

ES

.Th

eyca

nnot

bere

prod

uced

, dis

clos

edor

use

dw

ithou

tTH

ALE

S' p

riorw

ritte

nap

prov

al. ©

THAL

ES

2003

. Tem

plat

etrt

coV

6.0.

0

QWIP 2006 Sri Lanka

FPA expected performances in VLWIR

610-5

2

46

10-4

2

46

10-3

2

Cur

rent

den

sity

(A /

cm2 )

-2.0 -1.6 -1.2 -0.8

Bias (V)


Optical current

TBB = 280 K, F/2

λC = 15.1 µm

10-6

10-5

10-4

10-3

10-2

Cur

rent

den

sity

(A /

cm2 )

-2.0 -1.5 -1.0 -0.5 0.0

Bias (V)


Optical current

TBB = 280 K, F/2

λC = 18.3 µm

ROIC ISC0208 : 384x288 ; pitch 25µm

Tbb=280K; f/2 (diffraction limited)

dynamics = +30°C


NETD = 15 mK


Integration Time = 6 mS


NETD = 22 mK


Integration Time = 8.5 mS

33

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doc

umen

t and

any

data

incl

uded

are

the

prop

erty

of T

HAL

ES

.Th

eyca

nnot

bere

prod

uced

, dis

clos

edor

use

dw

ithou

tTH

ALE

S' p

riorw

ritte

nap

prov

al. ©

THAL

ES

2003

. Tem

plat

etrt

coV

6.0.

0

QWIP 2006 Sri Lanka

2 color (LW/LW or MW/LW) QWIP arrays

+ V1 + V2Signal

ROIC designed for:•2 color subframe at 100Hz •Optimized FPA temperature

Dual color QWIP FPA

256x256 pitch 25µm

IWR mode

25 µm

Spatial correlation(details of a 2 color QWIP array)

34

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doc

umen

t and

any

data

incl

uded

are

the

prop

erty

of T

HAL

ES

.Th

eyca

nnot

bere

prod

uced

, dis

clos

edor

use

dw

ithou

tTH

ALE

S' p

riorw

ritte

nap

prov

al. ©

THAL

ES

2003

. Tem

plat

etrt

coV

6.0.

0

QWIP 2006 Sri Lanka

256² MWIR–LWIR FPA demonstrator

MWIR band LWIR bandResponsivityMean responsivity 10.4 mV/K 13.9 mV/K

σ 8.5% 9.9%


σ 17% 16%operability at 2 x mean value 99.5% 99.9%

0.6

0.4

0.2

0.0Spec

tral r

espo

nsiv

ity (A

/W)



Histogram of responsivity in LWIR band(Tfpa=70K - Tbb=20/30°C - tint=3ms)

-

4 000

8 000

12 000

16 000

20 000

5,1 7,8 10,4 13,0 15,6 18,2 20,8

respnsivity (mV/K)

Nb

of p

ixel

s

0%

20%

40%

60%

80%

100%

Ope

rabi

lity(

%)

responsivity (mV/K)operability (%)

LWIR bandHistogram of responvity in MWIR band (Tfpa= 70K - Tbb=20/30°C - tint=5ms)

-

4 000

8 000

12 000

16 000

5,1 6,7 8,3 9,9 11,5 13,1 14,7

responsivity (mV/K)

Nb

of p

ixel

s

0%

20%

40%

60%

80%

100%

Ope

rabi

lity

(%)

resp mV/K)operability (%)

MWIR band Responsivity

35

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doc

umen

t and

any

data

incl

uded

are

the

prop

erty

of T

HAL

ES

.Th

eyca

nnot

bere

prod

uced

, dis

clos

edor

use

dw

ithou

tTH

ALE

S' p

riorw

ritte

nap

prov

al. ©

THAL

ES

2003

. Tem

plat

etrt

coV

6.0.

0

QWIP 2006 Sri Lanka

256² LWIR–LWIR FPA demonstrator

LWIR1 band LWIR2 bandResponsivityMean responsivity 9.4 mV/K 8.9 mV/K

σ 7.6% 9.3%


σ 15.9% 12.4%operability at 2 x mean value 99.5% 99.4%

LWIR2 bandLWIR1 bandResponsivity Histogram in LWIR band

(Tfpa=65K - Tbb=20/30°C - F/1.6)

-

2 000

4 000

6 000

8 000

10 000

0,2 2,6 5,0 7,4 9,8 12,2 14,6

responsivity (mV/K)

Nb

of p

ixel

s

0%

20%

40%

60%

80%

100%

Ope

rabi

lity

(%)

réponse(mV/K)operabilité cumulée (% )

Responsivity

1.0

0.8

0.6

0.4

0.2

0.0Spec

tral r

espo

nsiv

ity (A

/W)

121086

Wavelength (µm)


36

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doc

umen

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any

data

incl

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are

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erty

of T

HAL

ES

.Th

eyca

nnot

bere

prod

uced

, dis

clos

edor

use

dw

ithou

tTH

ALE

S' p

riorw

ritte

nap

prov

al. ©

THAL

ES

2003

. Tem

plat

etrt

coV

6.0.

0

QWIP 2006 Sri Lanka

256² pitch 25µm Dual-Color LWIR FPA demonstrator

1.0

0.8

0.6

0.4

0.2

0.0Spec

tral r

espo

nsiv

ity (A

/W)

121086

Wavelength (µm)


LWIR1 band LWIR2 bandResponsivityMean responsivity 9.4 mV/K 8.9 mV/K

σ 7.6% 9.3%


σ 15.9% 12.4%operability at 2 x mean value 99.5% 99.4%

Dual Color QWIP FPA:

•256x256 pitch 25µm

•IWR mode

•2 color subframe at 100Hz

Negligeable Spectral Cross Talk

Even on small Pixels

37

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doc

umen

t and

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data

incl

uded

are

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erty

of T

HAL

ES

.Th

eyca

nnot

bere

prod

uced

, dis

clos

edor

use

dw

ithou

tTH

ALE

S' p

riorw

ritte

nap

prov

al. ©

THAL

ES

2003

. Tem

plat

etrt

coV

6.0.

0

QWIP 2006 Sri Lanka

MBE equipment: RIBER 49

24 36 48 60 72 84 9646.5

47.0

47.5

48.0

48.5

49.0

+ 0.5 Å

QW

th

ickn

ess

(Å

Time (h)

- 0.5 Å

24 36 48 60 72 84 9627.0

27.5

28.0

28.5

29.0

29.5

- 0.2 %

Al m

ole

frac

tion

(%)

Time (h)

+ 0.2 %

5 6 7 8 9 10 11 12-0.1

0.0

0.1

0.2

0.3

0.4

Ab

sorp

tio

n (

a.u

.)

Wavelength (µm)

A B C D

The Tool for R&D QWIP:

Uniformity

Reproducibility over a full week

5X3 inch wafers per platen

thales long wave qwip thermal imagers...qwip 2006 sri lanka vega-lw-rm4: 384×288 25µm pitch iddca...

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