tdk ambient light sensor
TRANSCRIPT
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Visible Radiant Optical Sensor /Data Sheet BCS2015A1
Shapes and dimension Equivalent circuitGlass SubstrateBCS2015A1
Electrical Characterisic Temperature= 25deg.C
Item ValueUnits Min. Typ. Max.
Output current 100Lux*1 Vop=5V A 6.0 8.0 10.0Operation voltage (Vop) 100Lux*1 V 1.2 --- 5.0Dark current Vop=5V nA --- --- 10
*Initial valueAbsolute Maximum Ratings Temperature= 25deg.C
Item ValueUnits
Operation voltage V 8Reverse voltage V -1Output current mA 1
Optical Characteristic Temperature= 25deg.CItem Value
Units
Spectral sensivty area nm 350 to 750Peak of sensivity nm 58020
OthersItem Value
UnitsOperating temperature deg. C -20 to 85Keep and transfer temperature deg. C -40 to 85Dimensions mm 2.01.50.6tWeight g 0.004
*1 White Fluor Light (color temperature=4200K)51101
*All specifications are subject to change without notice.
Application
Brightness control for LCD, EL and CRT
Brightness control for Keypads (e. g. Mobile Phones)
Positioning scanline for Rear Projecton TV
Exposure adjust for Compact Camera
Sub exposure adjust for Digital Camera
Dimensions in [mm]
( ) : Typical value
TDK Visible Radiant Optical Sensor is the photo-IC which uses an amorphous
silicone semiconductor technology. It is the most suitable for Brightness
Adjustment, Control of the Lighting systems. BCS2015A1 has current-
amplifire in it. BCS2015A1 is for surface mounthing.
Features
Highly receptive to visible light but not receptive to infrared light (close to
Human eye visibility).
Accurate illumination measurement can be taken without the use of an
infrared filter.
( Phototransistors and photodiodes that use crystal- silicon semiconductors
typically require this filtering.)
High output (Built-in current amplifire)
Surface mounting can be used in lead- free reflow soldering.
Lead- free, Cadmium-free
+
_
0.6
0.5
0.6
1.
2 t=0.6(typ.) 0.7(Max.)
Photo acceptance area
- Electrode + Electrode
1.
5
2
(0.
825)
(1.325)
(0.
55)
(0.55)
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Output characteristic(typical):BCS2015A1
Measuring circuit diagram
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1 10 100 1,000 10,000 100,000
Illuminance(Lx)
OutputCurrent(A)
Vop=3V
Vop=4V
Vop=5V
Optical sensor
Light
+
A
V
I-meter
V-meter-
Vop
2
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BCS2015A1Characteristic of Output Voltage (Typical)
Measuring circuit
Photo-IC
Vo
RL
Vcc
Illuminance dependency of Max. Vo (Typical)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
100 1000 10000
Illuminance(Lx)
Max.
Vo(V)
Vcc=5V
Vcc=3V
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Vcc=3V
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+00 1.E+01 1.E+02 1.E+03 1.E+04
IlluminanceLx
Vo
V
Vcc=5V
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+00 1.E+01 1.E+02 1.E+03 1.E+04
Illuminamce(Lx)
Vo
(V)
RL=950 ohm
RL=20k ohm
RL=260k ohm
RL=4k ohm
RL=55k ohm RL=630k ohm
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Typical photo response time:BCS2015A1 (typ.)
Measuring circuit
1.E-04
1.E-03
1.E-02
1.E+03 1.E+04 1.E+05
Load Resistor RL ()
Photo
responsetime(sec)
tr
tf
Optical sensor
LED pulse light
+
- VoutV
RL
2V
Vout
tr tf
90%
10%
4
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Temperature stability of output current:BCS2015A1 (typical)
Spectral response:BCS2015A1 (typical)
0.0
0.2
0.4
0.6
0.8
1.0
300 400 500 600 700 800
Wave length(nm)
Relativeresponce
Human eyes
(CIE standard)
BCS2015A1
*VR=5V
FL 100Lux
0.6
0.7
0.8
0.9
1
1.1
1.2
-10 0 10 20 30 40 50 60 70 80
Temperature(deg.C)
Relativeoutputcurrent
3
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Recommended land pattern
(mm) Stress
Recommanded reflow heat condition
Recommended land pattern is shown in Fig. Please arrange a land in the direction as
shown in Fig. to the direction of curvature as the result of heat stress by reflow and/or
physical stress.
*Pb Flee Solder is SnAgCu.
150deg./C
200deg./C
220deg./C
Less than 40sec
60sec.-100sec.
cooled gradually
For Pb-Sn soldering process
150deg./C
180deg./C
230deg./C
245deg./C - 255deg./C (MAX. 255deg./C)
60sec.-120sec.
30sec - 40sec
For Pb-Flee soldering process
cooled gradually
0.65
1.
2
0.45
0.5 0.65
0.45
0.
2
0.
5
0.
5
5