tango stress data ti(w)cu

Tango Systems, Inc Confidential Tango Systems, Inc Confidential

AXCELA™ 200/300/450

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Tango Systems “Cost-Effective Metallization Solutions”

Tango Systems, Inc Confidential

Ti Stress Tuning DOE: Power, Pressure, Thickness

Wafer No. Target Size/mm Power/kW Ar/sccm

Process Pressure/

mT Dep Time/

sec

Expected Thickness/

Å Stress/Mpa 1 Ti 300 1 50 5.2 540 1000 -270.8 2 Ti 300 3 50 5.2 180 1000 -276.1 3 Ti 300 6 50 5.2 90 1000 -175 4 Ti 300 3 50 5.2 90 500 -459.7 5 Ti 300 3 50 5.2 540 3000 200.3 6 Ti 300 3 20 2 180 1000 -112.2 7 Ti 300 3 80 7.7 180 1000 -232.5


Stress Data from Ti/Cu

Slot No. Stress/Mpa Material DC Pwr/kW Thickness/A Remarks

1 -270.8 Ti 1 1000 None

2 -113.1 Ti 2 1000 None

3 -276.1 Ti 3 1000 None

4 246 Cu 3 2000 None

5 98.11 Cu 3 3000 None

6 175.5 Cu 3 5000 None

7 103.5 Ti/Cu 3+3 1kA+2kA None



10 186.1 Ti/Cu 1+3 1kA+5kA None

11 225.4 Ti/Cu 2+3 1kA+5kA None

12 196.9 Ti/Cu 3+3 1kA+5kA ICP

13 266.6 Ti/Cu 3+3 1kA+5kA Degas+ICP

14 209.4 Ti/Cu 3+3 1kA+2kA ICP


16 189.9 Ti/Cu 3+3 1kA+3kA ICP



Ti Stress: Favored by Higher Power

Ti Stress Vs Power for ~ 1000A Thickness

-300-250-200-150-100-50

01 3 6

DC Power / kW

Str

ess/M

Pa


Ti Stress: Favored by Lower Pressure

Ti Stress Vs Process Pressure for ~ 1000A Thickness

-300

-250-200

-150

-100-50

02 5.2 7.7

Process Pressure / mT

Str

ess/

MP

a


Ti Stress: Compressive to Tensile Transition with Thickness

Ti Stress Vs Thickness at 3kW, 5mT

-500-400-300-200-100

0100200300

500 1000 3000

Ti Thickness / A

Str

ess/

MP

a

Compressive

Tensile


TiW Stress Tunable from Compressive to Tensile with Process Pressure

3750 A TiW Stress Tuning at 3 kW DC Power

-800

-600

-400

-200

0

200

400

600

800

8 15 20


Stre

ss /

MPa

Compressive

Tensile


TiW Stress Lowered by Low DC Power

TiW Stress vs Power for ~ 6mT, 3250A Thickness

-1600

-1200

-800

-400

0

400

1 3 6

DC Power / kW

Stre

ss/M

Pa


TiW Stress Lowered by Higher Process Pressure

TiW Stress vs Process Pressure for ~ 3kW, 3250A Thickness

-1800-1500-1200-900-600-300

0300

2 6 7.7


Stre

ss/M

Pa


Increasing TiW Film Thickness Lowers Stress

TiW Stress vs Thickness at 3kW, 6mT

-1800-1500-1200-900-600-300

0300

500 1000 3250

Ti Thickness / A

Stre

ss/M

Pa


TiW+Cu Stack Stress Minimal

Wafer No. Target Power/kW Ar/sccm Process

Pressure/mT Dep Time/

sec Stress/MPa

Expected Thickness

(Å)

1 TiW 3 80 7.6 90 -447 500

2 Cu 3 40 4 120 +212 1500

3 TiW+Cu 3/3 80/40 7.7/4 210 -2 2000


Film Stress |x| < 200 MPa & Minimal Warpage

•  Orange – only TiW or Cu film shows higher bow height

•  Green – TiW and Cu stack shows much lower stress

Wafer Slot RF Etch (300A) TiW (1kA) Cu (2kA) Stress / MPa Radius/m Height/µm

1 Y N Y 246 348 32

2 Y Y N -918 -207 -55 3 Y Y Y -113 -619.07 -18.35

4 Y Y Y -164.5 -409.01 -28

5 N N N 0 -32097 2.8


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