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The top documents tagged [base thicknessdecrease]
100+ GHz Transistor Electronics: Present and Projected Capabilities
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805-893-3244, 805-893-5705 fax 2010 IEEE International Topical
216 views
III-V HBT and (MOS) HEMT scaling Mark Rodwell, University of California, Santa Barbara WSG Workshop: Performance Metrics for mm-Wave Devices and Circuits
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M. Dahlström, Z. Griffith, M. Urteaga, M.J.W. Rodwell University of California, Santa Barbara, CA, USA X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau and
217 views
Process Technologies For Sub-100-nm InP HBTs & InGaAs MOSFETs
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Indium Phosphide Bipolar Integrated Circuits: 40 GHz and beyond Mark Rodwell University of California, Santa Barbara
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805-893-3244,
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Indium Phosphide Bipolar Integrated Circuits: 40 GHz and beyond
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Lower Limits To Specific Contact Resistivity
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Scaling of High Frequency III-V Transistors
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805-893-3244, 805-893-5705 fax Short Course, 2009 Conference on InP and Related Materials,
216 views
InP Bipolar Transistors: High Speed Circuits and Manufacturable Submicron Fabrication Processes
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805-893-3244, 805-893-5705 fax 2003
219 views
Frequency Limits of Bipolar Integrated Circuits
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805-893-3244, 805-893-5705 fax Mark Rodwell University of California, Santa Barbara
219 views
THz & nm Transistor Electronics: It's All About The Interfaces
54 views
100+ GHz Transistor Electronics: Present and Projected Capabilities
27 views
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