supporting information · scanning range of 10-70° and a scanning speed of 0.05°/s. x-ray...
TRANSCRIPT
SUPPORTING INFORMATION
Low-temperature SnO2-modified TiO2 yields record efficiency for normal planar
perovskite solar modules
Bin Ding, Shi-Yu Huang, Qian-Qian Chu, Yan Li, Cheng-Xin Li, Chang-Jiu Li and
Guan-Jun Yang*
School of Materials Science & Engineering, Xi'an Jiaotong University, No.28,
Xianning West Road, Xi'an, Shaanxi, 710049, P.R. China.
Corresponding author: G.-J. Yang, [email protected].
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry A.This journal is © The Royal Society of Chemistry 2018
Experimental section
N, N-dimethylformamide (DMF), titanium tetrachloride (TiCl4), and stannous
chloride dehydrate (SnCl2·2H2O) were purchased from Sinopharm Chemical Reagent
Co., Ltd (China). Methylammonium iodide (CH3NH3I, MAI), formamidinium iodide
(HC(NH2)2I, FAI), lead iodide (PbI2), and other chemicals for the preparation of
Spiro-OMeTAD solution were purchased from Xi'an Polymer Light Technology Corp.
(China). The transparent fluorine-doped tin oxide (SnO2:F, FTO) conductive glasses
(sheet resistance of 10 Ω sq-1) were patterned by laser from Weihua Solar Company
(China).
Fabrication of TiO2 compact layer
The FTO glass substrates were sequentially cleaned using acetone, ethanol, and
deionized water for 15 min via ultrasonic cleaning. The 2M aqueous TiCl4 solution
was firstly prepared by mixing TiCl4 with deionized water at 0 °C and then stored in a
freezer at the temperature of 5 °C, which remains stable for at least one year. The
cleaned FTO substrate was soaked in the dilute 2M aqueous TiCl4 solution, obtained
by mixing 2M aqueous TiCl4 solution and deionized water with the molar ratio of
1:10 and placed in a sealed glass container. Then the glass container was put in a
drying cabinet at the temperature of 70 °C for 1 h. After cooling, the FTO substrate
was repeatedly rinsed using ethanol and deionized water for three time, and dried at
120 °C for 1 h. The substrate was then treated at 70 °C for 30 min with the solution
prepared by 2M aqueous TiCl4 solution and deionized water with the molar ratio of
1:100. Finally the substrate was rinsed and dried by repeating the abovementioned
process.
Fabrication of SnO2 modified TiO2 (SnO2@TiO2) compact layer
2M SnCl2 ethanol solution was firstly prepared by using SnCl2·2H2O dissolved in
ethanol and then stored in the freezer at 5 °C. The FTO substrate coated with TiO2
nanoparticles by the abovementioned chemical bath was soaked in the solution
obtained by mixing 2M SnCl2 ethanol with deionized water with the molar ratio of
1:50 in a glass container. Then the glass container was placed in a drying cabinet at
the temperature of 70 °C for 1 h. After cooling, the FTO substrate was repeatedly
rinsed using ethanol and deionized water for three times. Finally the substrate was
annealed on a hotplate at 140 °C for 3h.
Fabrication of perovskite films and solar cells
The FTO substrate coated with the compact layer (TiO2 or SnO2@TiO2) was firstly
cleaned by UV-ozone for 15 min. A 40 wt % perovskite precursor solution was
prepared with molar ratios of PbI2/MAI/FAI fixed at 1:0.7:0.3 in DMF. The perovskite
films were deposited onto the TiO2 or SnO2@TiO2 substrates by using our previously
reported approach called gas-induced gas pump method.1 First, the perovskite
precursor solution was spin-coated onto the substrate at 2500 rpm for 10 s. Then, the
substrate was put into a gas pump system equipment. The gas pump equipment was
home-developed, mainly composed of a large vacuum tank and a sample chamber.
The vacuum tank maintaining at a constant pressure of 1500 Pa in this work and
sample chamber was connected with each other by a vacuum valve. At the bottom, the
sample chamber was attached to air by two symmetrical gas tubes further connecting
a gas flow controller, which allowing a certain amount of air flowing on the surface of
the wet perovskite film. After opening the valve, the DMF solvent evaporated
instantaneously. About 5 s later, closing the valve, a brown, somewhat transparent
perovskite film with a mirror-like surface was obtained. Subsequently, the film was
annealed at 120 °C for 20 min on a hot plate. Then the Spiro-OMeTAD solution (80
mg of Spiro-OMeTAD, 28.5 μL of 4-tert-butylpyridine, and 17.5 μL
lithium-bis(trifluoromethanesulfonyl)imide (Li-TFSI) solution (520 mg Li-TFSI) in
1mL acetonitrile) all dissolved in 1 mL of chlorobenzene) was spin-coated onto the
perovskite film by spin-coating at 4000 rpm for 30 s. The Spiro-OMeTAD-coated
substrates were stored in an auto-drying cabinet with temperature fixed at 20 °C and
relative humidity fixed at 15% for at least 8h. Finally, about100 nm thick gold layer
was deposited onto the Spiro-OMeTAD layer by thermal evaporation. As for the solar
module, after the substrate coated with Spiro-OMeTAD, the
Sipro-OMeTAD/perovskite on the non-device area was removed by DMF solvent in
order to forming a parallel module using the gold layer. All the films except gold layer
were prepared in air at the temperature of 22~25 °C and the relative humidity of
45~55 %.
Solar cell characterization
Photocurrent-voltage (J-V) characteristics of the devices were measured by applying a
sourcemeter (2400, Keithley) under the illumination of the solar simulator (Newport,
Class AAA) with an AM 1.5G filter (Sol3A, Oriel) at the light intensity of 100 mW
cm-2 calibrated with a standard Si reference cell (91150V, Oriel). After being taken out
of the chamber of the thermal evaporation, the devices were put in an auto-drying
cabinet for at least 4 h and then were directly measured. Normally, the devices were
measured at a scan step of about 23.7 mV (60 points in total) and a delay time of 1000
ms at the bias voltage range of -0.2 V to 1.2 V. For the champion cells, the devices
was also measured at different delay time, such as 100, 500 ,1000, and 1500 ms. For
the solar modules, the devices were measured at the scan step of 10 mV and the delay
time of 50 ms.
For the measurement of the maximum power point tracking in air, the device was
tested for 14 hours under the illumination of the solar simulator (Newport, Class AAA)
with an AM 1.5G filter (Sol3A, Oriel) at the light intensity of 100 mW cm-2 calibrated
with a standard Si reference cell (91150V, Oriel) with relative humidity of 45%-55%.
The current was updated every 4 s. For the measurement in ideal conditions, the
device was tested under continuous AM 1.5G illumination with intensity of one sun
from another solar simulator (CHF-XM500, Beijing perfectlight technology co. LTD)
equipped with a 420-nm cutoff UV-filter. The device was kept in a sealed home-made
steel box with a quartz glass window during the whole test. The box containing the
devices was purged with nitrogen flow for 3 hours to get rid of water and oxygen in
the whole space. The current-voltage characteristics were obtained every 24 hour.
The incident photon-to-current conversion efficiency (IPCE) was measured by Enli
tech (Taiwan) measurement system in AC mode in air without encapsulating the
devices. A home-developed system was applied to measure the transient photovoltage
and photocurrent decays. A white light bias with adjustable light intensity was
generated from an array of diodes. The voltage bias was maintained at open-circuit
voltage (VOC) by turning the intensity of the white light bias. The perturbation light
was generated from red light pulse diodes controlled by a fast solid-state switch with a
square pulse width, 100 ns rise and fall time. The intensity of perturbation light was
adjusted to a suitably amplitude of transient VOC below 5 mV in order for the voltage
decay kinetics to be mono-exponential. For the photovoltage decay measurement, the
open circuit condition was achieved by using a resistor of 5 MΩ controlled by a
resistance box. Similarly, the short circuit condition was achieved by using a 90
Ωresistor for the photocurrent decay measurement. The voltage dynamics were
recorded on a digital oscilloscope. The electrochemical impedance spectroscopy of
the perovskite devices was measured by using an electrochemical system (EIS,
Zennium IM6, Zahner). The devices were measured at the bias voltage from -0.7 V to
-1.0 V with step of 0.1 V and at a frequency ranging from 3 MHz to 100 mHz with an
AC amplitude of 20 mV under a LED light with the intensity of 10 mW/cm2.
Film characterizations
Field-emission scanning electron microscope (SEM, FEI Verios 460) was used to
characterize the surface and fracture morphologies of the ETLs, perovskite films and
PSCs. By using an ultraviolet-visible spectrophotometer (U-3900, HITACHI), the
transmittance spectra of the ETLs on the FTO substrates were measured by using a
glass substrate that has the same thickness as the FTO substrate as the background
data and the absorption spectra of the perovskite films were measured by using a FTO
substrate as the background data. X-ray diffraction (XRD, D8 Advance, Bruker) was
used to characterize the phase composition of the ETLs and perovskite films with a
scanning range of 10-70° and a scanning speed of 0.05°/s. X-ray photoelectron
spectroscopy (XPS) was measured using a Thermo Scientific ESCALab 250Xi with
200W monochromated Al Kα (1,486.6eV) radiation. XPS analysis was conducted
with a 500 μm spot size, 20 eV pass energy and energy steps of 0.05 eV at the
pressure of 3 × 10-10 mbar. For the steady-state photoluminescence spectra
measurement, a compact steady-state spectrophotometer (Fluoromax-4, Horiba Jobin
Yvon) was used with the laser diode at a wavelength of 457 nm. A LabRAM HR800
(Horiba Jobin Yvon) was implied to measure the time-resolved photoluminescence
(TRPL) measurements of perovskite films on different substrates at 786 nm using an
excitation with a 478 nm light pulse from a HORIBA Scientific DeltaPro fluorimeter.
The electron diffusion coefficient was estimated by fitting TRPL with equation S1.2,3
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wherer N(t) is the total charge number generated in the active layer, L is the
thickness of the active layer, k is the TRPL decay rate without any acceptor layer, D is
the charge-carrier diffusion coefficient and α is the linear absorption coefficient of the
active layer at the excitation wavelength.
The cross-sectional sample of the perovskite film deposited on the
SnO2@TiO2/FTO glass substrate was prepared by using FEI Helios Nanolab 600i
FIB-SEM system. The sample was firstly coated with Cr layer by Gantan 682 and
then was coated with two layers of Pt by electron beam deposition followed by Ion
beam deposition. Finally, the sample was cut by Ga beam at a voltage of 30 kV with
the cross-section at a tilted angle of 52° relative to the Ga ion sputtering direction.
Supplementary Figures and Tables
Fig. S1 XPS, XRD and UV-vis characterization. (a) Survey scan XPS spectra and (b) XRD
patterns of FTO, TiO2/FTO and SnO2 deposited on TiO2/FTO substrates annealed at 80, 140
as well as 180 °C. (c) Transmission spectra of FTO substrates with and without the TiO2 film
or the SnO2@TiO2 film. (d) I-V curves of the FTO/ETL/Au devices with fixed area based on
the TiO2 (T) and SnO2@TiO2 (S@T) ETL.
Fig. S2 SEM images of perovskite films morphologies. Top-view images of perovskite films
deposited on TiO2 with low (a) and (c) high magnifications or SnO2@TiO2 with (b) low and
high (d) magnification. The corresponding cross-sectional view images of perovskite films
deposited on TiO2 (e and g) or on SnO2@TiO2 (f and h).
Fig. S3 XRD patterns of perovskite films deposited on TiO2 or SnO2@TiO2 with heat
treatment (W/ HT) and without heat treatment (W/O HT). The perovskite films were annealed
at 120 °C for 20 mins.
Fig. S4 Characterization of TEM. (a) High angle annular dark field (HAADF) scanning
cross-sectional view TEM image of the perovskite film deposited on the SnO2@TiO2/FTO
substrate obtained by using FIB. (b) HAADF scanning TEM image of the enlarged FTO/
SnO2@TiO2/perovskite interfaces. Individual elemental maps of (c) C, (d) N, (e) I, and (f) Pb
of the area indicated by the white box in Fig. 3b. (g) HAADF scanning TEM image of the
enlarged FTO/SnO2@TiO2/perovskite interfaces with high magnification. The energy
dispersive spectra of the point 1 (h) and 2 (i) indicated by the plus signs in Fig. S4g.
Fig. S5 SEM images of planar perovskite solar cells. Cross-view images of the TiO2-based
device with low (a) and (c) high magnification and the SnO2@TiO2-based device with (b) low
and high (d) magnification.
Fig. S6 Device with 0.1 cm2 masked area performance. (a) J-V curves (reverse scan) of the
planar perovskite solar cells based on TiO2 films treated by different concentration SnCl2
solution via chemical bath. Photovoltaic parameters (b) JSC, (c) VOC and (d) FF for perovskite
solar cells based on TiO2 or SnO2@TiO2 ETLs. (e) The output of current density and the
corresponding PCE at the maximum power point with bias voltage of 975 mV for the
SnO2@TiO2-based champion cell as shown in Fig. 4d. (f) IPCE spectra of the champion cells
with TiO2 (Fig. 4c) and SnO2@TiO2 (Fig. 4d) ETLs.
Fig. S7 The characteristics of impedance spectroscopy of the devices based on TiO2 and
SnO2@TiO2 ETLs. (a) The equivalent circuit consisting of a resistance and two lumped RC
elements in series to fit the impedance data. (b) The Nyquist plots of the device based the TiO2
ETL at different bias voltages. (c) The Nyquist plots of the device based the SnO2@TiO2 ETL at
different bias voltages. (d) The series resistance (RS), (e) the charge transfer resistance (RCT),
and (f) the charge recombination resistance (RCR).
Fig. S8 device with active area of 1.13 cm2 performance. Photovoltaic parameters (a) JSC, (b)
VOC and (c) FF for 1.13 cm2 perovskite solar cells based on SnO2@TiO2 ETLs. (d) The output
of current density and the corresponding PCE at the maximum power point with bias voltage
of 939 mV for the SnO2@TiO2-based champion cell with active area of 1.13 cm2 as shown in
Fig. 5b.
Fig. S9 The illustration and photographs of the mini-module. (a) The size of the module in
detail. (b) The photograph of the module from the Au side. (c) The photograph of the module
from the FTO side which is the light incident surface.
Fig. S10 (a) The photograph of the modules on the 5 × 5.5 cm substrates from Au side. (b)
The photograph of the module from the FTO side which is the light incident surface.
Fig. S11 The certified result of the normal planar perovskite solar module. The device has a
masked area of 10.55 cm2 and an average PCE of 15.65% (VOC=5.25 V, ISC=45.58 mAcm-2,
and FF=69.0%) with less hysteresis.
Fig. S12 The certified results of the normal planar perovskite solar module in Fig. S17 at (a)
reverse scan (PCE=15.87%, VOC=5.25 V, ISC=45.41 mA/cm2 and FF= 70.20%) and (b)
forward scan (PCE=15.43%, VOC=5.26 V, ISC=45.75 mA/cm2 and FF= 67.70%).
Fig. S13. Normalized EQE spectra of the certified solar module with the integrated short
circuit current density of 20.86 mA/cm2.
Fig. S14 (a) Sol3A Class A spectral distribution and (b) EQE of Newport secondary solar cell
10510-0054 KG1 for the certification body.
Table S1 Photovoltaic parameters of the planar perovskite solar cells based on TiO2
films treated by different concentration of SnCl2 solution via chemical bath.
Concentration
(mM)
JSC
(mA/cm2)
VOC
(mV)
FF
(%)
PCE
(%)
0 22.50 1113 78.90 19.76
20 23.20 1113 79.03 20.42
40 24.79 1114 79.35 21.92
60 24.85 1067 79.73 21.15
80 24.91 1002 79.50 19.83
Table S2 Photovoltaic parameters of the TiO2-based champion cell. The device was
measured by reverse and forward scans at a scan step of 23.7 mV and delay time of
100, 500, 1000 as well as 1500 ms under a simulated AM 1.5G solar illumination of
100 mW/cm2.
Scan direction Delay time
(ms)
JSC
(mA/cm2)
VOC
(mV)
FF
(%)
PCE
(%)
Forward 100 22.26 1079 49.32 11.85
Reverse 100 22.97 1112 80.69 20.61
Forward 500 22.64 1075 64.86 15.79
Reverse 500 22.96 1107 81.31 20.66
Forward 1000 22.77 1074 70.12 17.15
Reverse 1000 22.83 1114 81.45 20.72
Forward 1500 22.79 1074 71.00 17.38
Reverse 1500 22.74 1114 81.50 20.65
Table S3 Photovoltaic parameters of the SnO2@TiO2-based champion cell. The device
was measured by reverse and forward scans at a scan step of 23.7 mV and delay time
of 100, 500, 1000 as well as 1500 ms under a simulated AM 1.5G solar illumination
of 100 mW/cm2.
Scan
direction
Delay time
(ms)
JSC
(mA/cm2)
VOC
(mV)
FF
(%)
PCE
(%)
Forward 100 24.47 1.10 75.76 20.38
Reverse 100 24.56 1.11 80.49 21.96
Forward 500 24.32 1.10 76.88 20.59
Reverse 500 24.54 1.11 80.52 21.95
Forward 1000 24.34 1.10 76.09 20.35
Reverse 1000 24.54 1.11 80.46 21.94
Forward 1500 24.56 1.10 76.47 20.57
Reverse 1500 24.61 1.11 80.38 21.96
Notes and references
1 B. Ding, Y. Li, S. -Y. Huang, Q. -Q. Chu, C. -X. Li, C. -J. Li, G. -J. Yang, J. Mater.
Chem. A, 2017, 5, 6840-6848.
2 S. D. Stranks, G. E. Eperon, G. Grancini, C. Menelaou, M. J. P. Alcocer, T. Leijtens,
L. M. Herz, A. Petrozza, H. J. Snaith, Science, 2013, 342, 341-342.
3 G. Xing, N. Mathews, S. Sun, S. S. Lim, Y. M. Lam, M. Gratzel, S. Mhaisalkar, T. C.
Sum, Science, 2013, 342, 344-347.