supplementary information · sikandar h. tamboli, beom seok kim, geehong choi, hwanseong lee,...
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Supplementary information
Post-heating effects on the physical and electrochemical capacitive properties of reduced
graphene oxide paper
Sikandar H. Tamboli, Beom Seok Kim, Geehong Choi, Hwanseong Lee, Donghwi Lee, U. M.
Patil, Juhwan Lim, S. B. Kulkarni, Seong Chan Jun, Hyung Hee Cho*
Department of Mechanical Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-
gu, Seoul 120-749, KOREA
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry AThis journal is © The Royal Society of Chemistry 2014
Table S1 ID/IG ratio of rGO papers annealed at different temperatures.
Annealing temperature ID/IG
RT 1.07
200°C 1.095
400°C 1.117
600°C 1.121
800°C 1.193
1000°C 1.200
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry AThis journal is © The Royal Society of Chemistry 2014
0 20 40 60 80 100
Inte
nsi
ty (
a.u
.)
2(degree)
RT
1000°C
Fig. S1 XRD patterns of RT and 1000 oC annealed rGO papers.
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry AThis journal is © The Royal Society of Chemistry 2014
Fig. S2 Surface morphology of GO and rGO papers annealed at different temperatures.
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry AThis journal is © The Royal Society of Chemistry 2014
Fig. S3 Nitrogen adsorption/desorption isotherm of rGO paper annealed at 2000C and 1000
0C
and pore size distribution in inset, further demonstrate the porous structure with high surface
area.
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry AThis journal is © The Royal Society of Chemistry 2014
Fig. S4 XPS scans for the different temperature annealed rGO papers.
250 300 350 400 450 500 550 600
C1S
1000oC
800oC
600oC
400oC
200oC
O1S
Co
un
ts (
a.u
.)
Binding energy (eV)
RT
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry AThis journal is © The Royal Society of Chemistry 2014
Fig. S5 Raman Spectra of rGO paper annealed at 200oC and 1000
oC in argon and argon +
hydrogen gas.
1000 1500 2000 2500 3000
Inte
nsi
ty (
a.u
.)
Raman Shift (cm-1)
200oC in Ar gas
200oC in H
2+Ar gas
1000 1500 2000 2500 3000
1000oC in Ar gas
1000oC in H
2+Ar gas
Inte
nsi
ty (
a.u
.)
Raman Shift (cm-1)
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry AThis journal is © The Royal Society of Chemistry 2014
Fig. S6 Cyclic voltammetric (CV) behavior of rGO paper annealed at 200 oC in 1M H2SO4.
-0.4 -0.2 0.0 0.2 0.4 0.6
-0.2
-0.1
0.0
0.1
0.2
-0.2 0.0 0.2
-0.1
Cu
rre
nt
(mA
)
Voltage (V)
200 oC
-0.2 0.0 0.2
0.1
Cu
rre
nt
(mA
)
Voltage (V)
200 oC
Cu
rre
nt
(mA
)
Voltage (V)
200 oC
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry AThis journal is © The Royal Society of Chemistry 2014
10-1
100
101
102
103
104
105
10-1
100
101
102
En
erg
y d
en
sit
y (
Wh
kg
-1)
Power density (W kg-1)
Fig. S7 Ragone plots of the samples annealed at different temperature.
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry AThis journal is © The Royal Society of Chemistry 2014