Status of the sensor development for future Super-Colliders

G. Casse

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Outline

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• Requirements for detectors for future supercolliders • Vertex and tracker sensors• Definition of the challenges: speed and radiation hardness• Status•Conclusions

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Possible 20 Year LHC Schedule

Comments:•Remember the Tevatron at Fermilab started operating at 3.5× the SPS (CERN) collider energy in October 1985 and only finally shut down this September after 25 years at the energy frontier•The initial design luminosity of the Tevatron was 1030cm−2s−1, however the accelerator has been continually upgraded over the years and was finally able to deliver luminosities up to 4 × 1032cm−2s−1 3

Phase-0 (installation 2013-14)Phase-0 (installation 2013-14)- New Aluminum beam pipes to prevent activation problem and reduce BG- New Insertable pixel B-Layer (IBL) (drives shutdown schedule)- New pixel services (nSQP) ( pending decision by mid 2012)- New small Be pipe- New evaporative cooling plant for Pixel and SCT + IBL CO2 cooling plant- Replace all calorimeter Low Voltage Power Supplies - Finish the installation of the EE muon chambers staged in 2003 +

additional chambers in the feet (new electronics) and elevators region- Exchange all broken TGCs where possible- Consolidate part of the LUCID system- Upgrade the magnets cryogenics with a new spare main compressor and

decouple toroid and solenoid cryogenics- Add specific neutron shielding ( behind end-cap toroid, USA15)- Revisit the entire electricity supply network (UPS,…)- Repairs and maintenance work in general !!!- Preparations for Phase I upgrade (moveable b-pipe, AFP prototypes,… )- MBTS removal and possible replacement

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Phase-I (installation in or before LS2)Phase-I (installation in or before LS2)

- New muon small wheels with more trigger granularity and trigger track vector information

- Fast track trigger (FTK) using SCT and pixel hits (input to LVL2) expected installation before LS2

- Higher-granularity calorimeter LVL1 trigger and associated front-end electronics

- Topological trigger processors combining LVL1 information from different regions of interest (improvements starting well before LS2)

- Adapt central LVL1 trigger electronics to new needs

- New diffractive physics programme detector stations planned at ~210 m (full 3D edgeless and timing detectors, to start taking data before LS2)

- New Tiles crack-gap scintillators and some new trigger electronics

- Adapt if proven necessary HLT hardware (in particular network) to the new needs/conditions 5

Phase-II (installation 2022-23)

1. New Inner Detector (strips and pixels) − very substantial progress in many R&D areas

2. New LAr front-end and back-end electronics3. New Tiles front-end and back-end electronics4. TDAQ upgrade5. TAS and shielding upgrade6. Various infrastructure upgrades7. Common activities (installation, safety, …)8. New FCAL ?9. Lar cold electronics consolidation ?10. L1 track trigger (possible role of gas detectors) ?11. Muon Barrel and Large Wheel system upgrade ?12. LUCID upgrade ?

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HL-LHC Performance Goals

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Integrated luminosity: 200 fb-1 to 300 fb-1 per year

Leveled peak luminosity: L = 5 ×1034 cm-2 sec-1

Oliver Brüning BE-ABP

Total integrated luminosity:

Virtual peak luminosity: L = 10 ×1034 cm-2 sec-1

LHCC meeting, CERN, 14 June 2011

10 20 h0

with luminosityleveling 5.10-34

w/o luminosityleveling 10-35

Finally look to double the energy (HE-LHC)16.5+16.5 TeV proton collider in the LHC tunnel

: ca. 3000 fb-1

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To keep ATLAS and CMS running beyond ~10 years requires tracker replacement Current trackers designed to survive up to 10Mrad in strip detectors ( ≤ 700 fb-1) For the luminosity-upgrade the new trackers will have to cope with:

• much higher integrated doses (need to plan for 3000 fb-1)

• much higher occupancy levels (up to 200 collisions per beam crossing)

• Installation inside an existing 4π coverage experiment

• Budgets are likely to be such that replacement trackers, while needing higher performance to cope with the extreme environment, cannot cost more than the ones they replace

To complete a new tracker for ~2020, require Technical Design Reports by 2014/15 (Note the ATLAS Tracker TDR: April 1997; CMS Tracker TDR: April 1998)

Upgrading the General Purpose Detectors

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Draft Target SpecificationsDraft Target SpecificationsPlan for occupancy numbers based on this (see µ values below)

Plan integrated dose figures based on this

µ values going with the peak luminosity figure if achieved with 25ns beam crossing

When we calculate the dose figures which are used to specify the radiation hardness of components which can be reliably tested for post-irradiation performance (eg ASICs, silicon sensors, diamond, ...) apply this safety factor to the dose calculations in setting the radiation survival specification(Still under discussion)

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Radiation Background Simulation

For strips 3000fb-1

×2 implies survival required up to ~1.3×1015 neq/cm2

At inner pixel radii - target survival to 2-3×1016 neq/cm2

I. Dawson et al. 11

Radiation levels expected with sLHC

• Radiation hardness requirements (including safety factor of 2)• 2 × 1016 neq/cm2 for the innermost pixel layers

• 1 × 1015 neq/cm2 for the innermost strip layers

Dominated bypion damage

Dominated byneutron damage

[M.Moll]

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Status of radiation hardness studies

• Crucial point for Vertex and Tracker sensors• Silicon still the forefront runner, no serious

possibility to change track within the timescale (possible exception, diamond for innermost layer....).

• Dedicated R&D activity within the upgrading experiments and a dedicated community (CERN-RD50). Most advanced results from this community.

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8 North-American institutesCanada (Montreal), USA (BNL, Fermilab, New Mexico, Purdue, Rochester, Santa Cruz, Syracuse)

1 Middle East instituteIsrael (Tel Aviv)

39 European and Asian institutes Belarus (Minsk), Belgium (Louvain), Czech Republic (Prague (3x)), Finland (Helsinki, Lappeenranta), Germany (Dortmund, Erfurt, Freiburg, Hamburg, Karlsruhe, Munich), Italy (Bari, Florence, Padova, Perugia, Pisa, Trento), Lithuania (Vilnius), Netherlands (NIKHEF), Norway (Oslo (2x)), Poland (Warsaw(2x)), Romania (Bucharest (2x)), Russia (Moscow, St.Petersburg), Slovenia (Ljubljana), Spain (Barcelona (2x), Santander, Valencia), Switzerland (CERN, PSI), Ukraine (Kiev), United Kingdom (Glasgow, Liverpool)

255 Members from 48 Institutes

Detailed member list: http://cern.ch/rd50

Development of Radiation Hard Semiconductor Devices for High Luminosity Colliders

Membership changes in 2010:- left RD50: Lancaster University (UK) (Teamleader A.Chilingarov )

- joined RD50: Institut de Física d'Altes Energies (IFAE), Bellaterra (Barcelona), Spain (Teamleader S.Grinstein) Instituto de Física de Cantabria (IFCA), Santander, Spain (Teamleader Ivan Vila)

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Defect Characterization • WODEAN project (initiated in 2006, 10 RD50 institutes, guided by G.Lindstroem, Hamburg)

– Aim: Identify defects responsible for Trapping, Leakage Current, Change of Neff

– Method: Defect Analysis on identical samples performed with the various tools available inside the RD50 network:

•C-DLTS (Capacitance Deep Level Transient Spectroscopy)• I-DLTS (Current Deep Level Transient Spectroscopy)•TSC (Thermally Stimulated Currents)•PITS (Photo Induced Transient Spectroscopy)•FTIR (Fourier Transform Infrared Spectroscopy)•RL (Recombination Lifetime Measurements)•PC (Photo Conductivity Measurements)•EPR (Electron Paramagnetic Resonance)•TCT (Transient Charge Technique)•CV/IV

– ~ 240 samples irradiated with protons and neutrons

– first results presented on 2007 RD50 Workshops,further analyses in 2008 and publication of most important results in in Applied Physics Letters

… significant impact of RD50 results on silicon solid state physics – defect identification

90 100 110 120 130 140 150 160 170 180 190

0

5

10

15Forward injection at 5K

T = 3.5K

H(140K)0/-BD0/++

H(116K)0/-

T = 2.5K T = 5.3K

EPI-DO irradiated with 1 MeV neutrons, = 5x1013cm-2

T = 6K

H&E trapsH(152K)0/-

TS

C s

igna

l (pA

)

Temperature (K)

250V 200V 150V 100V 70V 3D-PF, 250 V 3D-PF, 200V 3D-PF, 150V 3D-PF, 100V 3D-PF, 70V

Example: TSC measurement on defects (acceptors) responsible for the reverse annealing

• IR absorption measurements allow to measure defect concentrations after very high fluences

– Example: IR absorption measurements after neutron irradiation (3×1016 n/cm2)

– Same Vacancy concentration in CZ and FZ silicon.

Infrared absorption (FTIR)

V2014K

RT

V2-

Illuminationat low T (8K)

Remaining question: Are the vacancies inside the defect clusters (disordered regions) charged differently than outside the clusters? Needs: Electron Irradiation to clarify.

Sample Fluence [cm-2]

[V20]

[cm-3]Introduction rate[cm-1] [V2

-][cm-3]

Introduction rate[cm-1]

FZ 1*1016 3.7*1015 0.37 1.3*1015 0.13

MCz 1*1016 3.39*1015 0.34 - -

FZ 3*1016 9.7*1015 0.32 - -

MCz 3*1016 9.1*1015 0.30 3.8*1015 0.13

Summary – defects with strong impact on the device properties at operating temperature

Point defects

• EiBD = Ec – 0.225 eV

• nBD =2.310-14 cm2

• EiI = Ec – 0.545 eV– n

I =2.310-14 cm2

– pI =2.310-14 cm2

Cluster related centers

• Ei116K = Ev + 0.33eV

• p116K =410-14 cm2

• Ei140K = Ev + 0.36eV

• p140K =2.510-15 cm2

• Ei152K = Ev + 0.42eV

• p152K =2.310-14 cm2

• Ei30K = Ec - 0.1eV

• n30K =2.310-14 cm2

V2 -/0

VO -/0 P 0/+

H152K 0/-

H140K 0/-

H116K 0/-CiOi

+/0

BD 0/++

Ip 0/-

E30K 0/+

B 0/-

0 charged at RT

+/- charged at RT

Point defects extended defects

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Summary – defects with strong impact on the device properties at operating temperature

Point defects

• EiBD = Ec – 0.225 eV

• nBD =2.310-14 cm2

• EiI = Ec – 0.545 eV– n

I =2.310-14 cm2

– pI =2.310-14 cm2

Cluster related centers

• Ei116K = Ev + 0.33eV

• p116K =410-14 cm2

• Ei140K = Ev + 0.36eV

• p140K =2.510-15 cm2

• Ei152K = Ev + 0.42eV

• p152K =2.310-14 cm2

• Ei30K = Ec - 0.1eV

• n30K =2.310-14 cm2

V2 -/0

VO -/0 P 0/+

H152K 0/-

H140K 0/-

H116K 0/-CiOi

+/0

BD 0/++

Ip 0/-

E30K 0/+

B 0/-

0 charged at RT

+/- charged at RT

Point defects extended defects

Reverse annealing(neg. charge)

leakage current+ neg. charge(current after irradiation)

positive charge (higher introduction after proton irradiation than after neutron irradiation)

positive charge (high concentration in oxygen rich material)

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0 0.5 1 1.5 2eq [1014cm-2]

1

2

3

4

5

|Nef

f| [1

012 c

m-3

]

50

100

150

200

250

300

Vde

p [V

] (

300

m)

1.8 Kcm Wacker 1.8 Kcm Wacker 2.6 Kcm Polovodice2.6 Kcm Polovodice3.1 Kcm Wacker 3.1 Kcm Wacker 4.2 Kcm Topsil 4.2 Kcm Topsil

Neutron irradiationNeutron irradiation

Radiation tolerance prediction: “old” method

St = 0.0154

[O] = 0.0044 0.0053

[C] = 0.0437

0

1E+12

2E+12

3E+12

4E+12

5E+12

6E+12

7E+12

8E+12

9E+12

1E+13

0 1E+14 2E+14 3E+14 4E+14 5E+14

Proton fluence (24 GeV/c ) [cm-2]

|Nef

f| [c

m-3

]

0

100

200

300

400

500

VF

D f

or 3

00

m t

hic

k d

etec

tor

[V]

Standard (P51)O-diffusion 24 hours (P52)O-diffusion 48 hours (P54)O-diffusion 72 hours (P56)Carbon-enriched (P503)

“Good” operation of sensors was based on the ability to provide a bias voltage corresponding to 120-130% of the full depletion voltage. But the VFD would be well over 10000V at HL-LHC doses ....

More relevant method: analogue readout with LHC speed electronics

Mip signal from 90Sr source

Analogue information from the Alibava board (equipped with Beetle chip) 21

p-on-n silicon, under-depleted:

• Charge spread – degraded resolution

• Charge loss – reduced CCE

p+on-n

RD50: Device engineeringp-in-n versus n-in-p (or n-in-n) detectors

n-on-p silicon, under-depleted:

•Limited loss in CCE

•Less degradation with under-depletion

•Collect electrons (3 x faster than holes)

n+on-p

n-type silicon after high fluences:(type inverted)

p-type silicon after high fluences:(still p-type)

Comments:- Instead of n-on-p also n-on-n devices could be used

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The readout side yields remarkable improvement.Comparison of n-in-p µ-strip sensor (irradiated to 4E14 neq cm-2) and p-in-n (irradiated to 3E14 neq cm-2).

G. Casse et al., 2000

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N-side read-out can make planar segmented Si detectors suitable for tracking in extreme (SLHC levels: 1-2x1016 cm-2) radiation

environments.

Schematic changes of Electric field after irradiation

Effect of trapping on the Charge Collection

Efficiency (CCE)

Collecting electrons provide a sensitive advantage with respect to holes due to a much shorter tc. P-type detectors are the most natural solution for e collection on the segmented side.

Qtc Q0exp(-tc/tr), 1/tr = .

N-side read out to keep lower tc

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Effect of trapping on the Charge Collection

Distance

Qtc Q0exp(-tc/tr), 1/tr = .

After heavy irradiation the charge collection distance (CCD) of thin detectors should have a similar (better?) charge collection efficiency (CCE) as thicker ones.

vsat,e x tr = av

Max,n (=1e14) 2400µm

Max,n (=1e16) 24µm

G. Kramberger et al., NIMA 476(2002), 645-651.

e = cm-2/ns

h = cm-2/ns

The reverse current is proportional to the depleted volume in irradiated detectors. Do thin sensors offer an advantage in term of reduced reverse current compared to thicker ones (this aspect is particularly important for the inner layer detectors of SLHC, where significant contribution to power consuption is expected from the sensors themselves)?

Max,p (=1e14) 1600µm

Max,p (=1e16) 16µm

Results with proton irradiated 300 m n-in-p Micron sensors (up to 1x1016 neq cm-2)

RED: irradiated with 24GeV/c protonsOther: 26MeV protons

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Irradiated with reactor neutrons

... but there is dependence on the thickness: 140 and 300 m n-in-p Micron sensors

27G. Casse, VERTEX 2010, 6-11 June 2010

Irradiation to 1x1016 neq cm-2 with 26 MeV protons

Cold(0-5 oC) irradiation to 1x1016 neq cm-2 with 24 GeV/c protons

Irradiation to 2x1016 neq cm-2 with reactor neutrons

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I. Mandic at the 12th RD50 workshop.

The results in the previous slide are a compilation of results obtained by Liverpool. Results from the JSI of Ljubljana show very good agreement with the neutron irradiations. Here they have been pushed to higher voltages and they show a collected charge equal to the charge collected by non-irradiated sensors after heavy irradiation.

Liverpool

Evidence of a charge multiplication effect: not only the whole charge is recovered, but increased by f = 1.75

140 and 300 m n-in-p Micron sensors after 5x1015

neq 26MeV p

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Also CM in diodes (J. Lange, 15th RD50 workshop).

G. Casse, VERTEX 2010, 6-11 June 2010 30

TCAD, M. Benoit et al., presented at the ATLAS Upgrade meeting, DESY, Hamburg, 19/04/2010

Radiation damage

31G. Casse, VERTEX 2010, 6-11 June 2010

ISE TCAD, M. Benoit et al., presented at the ATLAS Upgrade meeting, DESY, Hamburg, 19/04/2010

140m300m

G. Kramberger et al.,"Edge TCT, A new way of extracting electric field from irradiated silicon detectors", 13th RD50 Workshop, Freiburg, 3-5.6.2009

32 04/19/23

““Edge-TCT” a new way of using TCTEdge-TCT” a new way of using TCT

The idea is to use focused IR laser to simulate grazing technique:Advantages:• Position of e-h generation can be controlled by moving tables• the amount of injected e-h pairs can be controlled by tuning the laser power• easier mounting and handling• not only charge but also induced current is measured – a lot more information is obtainedDrawbacks:• Applicable only for strip/pixel detectors if 1060 nm laser is used (light must penetrate guard ring region)• Only the position perpendicular to strips can be used due to widening of the beam! Beam is “tuned” for a

particular strip • Absorption falls with temperature of the sensor – a relatively powerful laser is required for large signal and

makes absolute measurements of the charge more difficult• Light injection side has to be polished to have a good focus – depth resolution• It is not possible to study charge sharing due to illumination of all strips

active volume

scan direction y

Illumination close to strips – hole injection

Illumination close to backplane – hole injection

The same amount of charge injected for close to strip and close to backplane – change of e-h fraction

IRlaser

(p)

bias

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CM is a well documented effect, but we are not mastering it yet

We can qualitatively understand it. We are investigating it from various perspectives.

ISE TCAD, M. Benoit et al., presented at the ATLAS Upgrade meeting, DESY, Hamburg, 19/04/2010

TCT studies2nd peak due to avalanche multiplication

the difference in peak amplitude for different y is due to electrons trapped

G. Kramberger wt al., 18th RD50 workshop.

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e2v Preliminary

e2v Preliminary

Consistent results from various manufacturers

500 V

900 V

Cluster sizes after various doses

G. Casse, NSS-2011, 23-28 October 2011, Valencia35

Seed cut = 3.5*ENCCluster = 2.5*ENC

G. Casse, NSS-2011, 23-28 October 2011, Valencia36

Cluster sizes after various doses

G. Casse, NSS-2011, 23-28 October 2011, Valencia37

Cluster sizes after various doses

Changes of cluster size with dose

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500 V700 V

900 V 1100 V

Alternative Technologies to Planar Silicon

Hamburg/EVO, April 21, 2010 Marko Mikuž: Small radius pixel sensors

Diamond

Annealing time

Charge multiplication

Leakage current, -10ºC, 1016 neq/cm2 Vbias fixed at 150VTrap-to-band tunnellingImpact ionisation

3D Sensors with Doped Through Silicon Columns

Planar CVD Diamond: Poly-crystalline or Single Crystal

ATLAS Tracker Based on Barrel and Disc Supports

Effectively two styles of double-sided modules (12 cm long)each sensor ~6cm wide (768 strips of 80μm pitch per side)

Barrel Modules Forward Modules (Hybrid bridge above sensors) (Hybrid at module end)

Current ATLAS SCT Module Designs

Hybrid cards carrying read- out chips and multilayer interconnectcircuit

SensorSensor SensorSensorSensorSensor SensorSensor

Full Length 12 Module Mock-up Stave

DC-DC Stavelet (CF core made at Liverpool)

Stave Prototypes and Powering Concepts

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H0 H1 H2 H3

Extra Noise compared to Reference Data

Shield H0 H1 H2 H3

100m Cu 62 60 11 26

140m Cu 58 46 8 24

ENC ENC ENC ENC

0V 2.5V 5V 7.5V 10V 12.5V

Serial Powered Chain of Hybrids

Concept based on single-sided modules sandwiched around a carbon fibre core with integrated cooling and bus-tape (more similar to current pixels)tested

Glue

Glue

Both powering schemes can be made to work in this configuration

Targets low mass and large-scale production

4 module fully working SP stave built and tested

Liverpool Hybrid and Module Design

9 .75cm

ATLAS Large Area Strip Sensors• Collaboration of ATLAS with Hamamatsu Photonics (HPK)

to develop 9.75x9.75 cm2 n+-strip in p-type substrate devices (6 inch wafers) for strip regions

– 4 segments (2 axial, 2 stereo), 1280 strip each, 2.45cm long, 74.5 m pitch, ~320 mm thick

– FZ1 <100> and FZ2 <100> material studied– Miniature sensors (1x1 cm2) for irradiation studies

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Axial

Stereo

0

100

200

300

400

500

0 200 400 600 800 1000

-Ile

ak

[nA

]

-Vbias [V]

Leakage Currentw32 PRGw33 PRGw35 PRGW37 PRGw38 PRGw39 PRGW19 SBUW21SBUW22 SBUW23 SBUW25 SBUW26 SBUW27 SBUW28 SBUW29 SBUW18 GeUW17 GeUW15 CAMW16 CAM

Ileak normalized to 20 C

• >150 full-size sensor prototypes delivered and characterized to final specifications

– Inter-strip capacitance & resistance, coupling capacitance, depletion voltage, leakage currents and polysilicon resistors qualified

Use of p-type silicon for high radiation environments pioneered by Liverpool with Micron Semiconductor (UK) Ltd and CNM Barcelona

Module Assembly Progress

Tooling for all sites designed by and provided from Liverpool

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Stavelet Construction – Electrical Module Programme

-32°C

-25°C

-25°C44

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Conclusions

The progress of Si sensor technology make possible to equip the

future HL colliders with efficient sensors (to 3000 fb-1) to the

innermost layers. Still a big challenge are services (cooling,

powering .....) and cost.......