sputtering apparatus

1
!ili!ii?i!?:/ METAL 1111~TMENT APPARATUS U.S. Patent 6,171,409. Jan. 9, 2001 M. Hamacher et al., assignors to Henkel KG A process for the chemical treat- ment of metal surfaces and instal- lation suitable therefore. $P~llrSalN6 APPARATUS U.S. Patent 6,171,454. Jan. 9, 2001 T Weber et al., assignors to Robert Bosch GmbH, Stuttgart, Germany A method for coating surfaces us- ing a facility having sputter elec- trodes. $F~nrlrERMl~ TAR6Lrl " U.S. Patent 6,171,455. Jan. 9, 2001 V. Pavate et al., assignors to Applied Materials Inc., Santa Clara, Calif. A target for use in magnetron sputtering of aluminum for form- ing metallization films having low defect densities. RIMPl/Y~IIIII~ TO AOIIIIINE Bllllm $1rlm O01/ImA~| U.S. Patent 6,171,459. Jan. 9, 2001 S.P.. Leiphart, Boise, Idaho, assignor to Micron Technology Inc. Boise, Idaho A method of depositing a first ma- terial onto a semiconductor sub- strate, which comprises a recess, having a bottom, and defined by sidewalls comprising a second material, the method comprising sputtering the first material onto the semiconductor substrate, to form a layer of sputter-deposited material; applying a first bias voltage to the substrate while si- multaneously resputtering the sputter-deposited material, the first bias voltage being suffi- ciently large to form a facet at the top of the recess; and applying a second bias voltage to the sub- strate, the second bias being suf- ficiently small to terminate the formation of the facet, while si- multaneously sputter-depositing the first material onto the bottom of the recess. mmiolr MErALUZAI"IOI~ PlmClm~ U.S. Patent 6,171,468. Jan. 9, 2001 C.E. Thorn et al., assignors to Electrochemicals Inc., Maple Plain, Minn. A method of applying an electri- cally conductive carbon coating to a non-conductive surface compris- C-IE for nickel,silver,chrom, gold, copper, paint, glass, and ceramics. R~kmes all nmtallic oxidm to ~=um ~ bond. 1009& adhmlon over 1st coat. Pmsivatlonis el'm~;natad. Recommended for u~ on Wafers and in the Ebcronic CircuitBoard Industry. NOW AVAILABLE AT PUMA CHEMICAL AN EXPANDED LINE OF PLATING, ANODIZING, pIIOSPHATING A~m GALVANIZING PIROIDUCT~ www. pumachemi cal.. com ~ Puma Chemical P.O. Box 67, Warne, NC 28909 Voice: See 211-7993 Fax: 828 389-4~23 Global : (~1-8Z8-389-3~74 Circle 064 on reader card or go to www.thru.to/webconnect ..~® ~ _ ~ ~ ~ ©®~ ©®~~®~ Certainly not from our platinum cl~ platedanode. ..... '."~..: ~11~'~-~ili~ / l__~k:~_~l We cm=tom fabricate your anode Erom our platlam clad niobium stock .... 125 or 250 micrninoh plaUnum clad, single or double sided platinum, solid or expanded mesh, titanium/niobium frame. Q.ai~ ~u ~)Vm= ~ A Om.,.e 0-.. • ll~l~ 3am4~,oa,New York 718-481-8741 Fe,x718-481-9859 Circle 038 on reader card or go to www.thru.to/webconneet 114 Metal Finishing

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Page 1: Sputtering apparatus

!ili!ii?i!?:/

METAL 1111~TMENT A P P A R A T U S U.S. Patent 6,171,409. Jan. 9, 2001 M. Hamacher et al., assignors to Henkel KG

A process for the chemical treat- ment of metal surfaces and instal- lation suitable therefore.

$ P ~ l l r S a l N 6 A P P A R A T U S

U.S. Patent 6,171,454. Jan. 9, 2001 T Weber et al., assignors to Robert Bosch GmbH, Stuttgart, Germany

A method for coating surfaces us- ing a facility having sputter elec- trodes.

$F~nrlrERMl~ TAR6Lr l "

U.S. Patent 6,171,455. Jan. 9, 2001 V. Pavate et al., assignors to Applied Materials Inc., Santa Clara, Calif.

A target for use in magnetron

sputtering of aluminum for form- ing metallization films having low defect densities.

R I M P l / Y ~ I I I I I ~ TO AOI I I I INE B l l l l m $1rlm O 0 1 / I m A ~ |

U.S. Patent 6,171,459. Jan. 9, 2001 S.P.. Leiphart, Boise, Idaho, assignor to Micron Technology Inc. Boise, Idaho

A method of depositing a first ma- terial onto a semiconductor sub- strate, which comprises a recess, having a bottom, and defined by sidewalls comprising a second material, the method comprising sputtering the first material onto the semiconductor substrate, to form a layer of sputter-deposited material; applying a first bias voltage to the substrate while si-

multaneously resputter ing the sputter-deposited material, the first bias voltage being suffi- ciently large to form a facet at the top of the recess; and applying a second bias voltage to the sub- strate, the second bias being suf- ficiently small to terminate the formation of the facet, while si- multaneously sputter-depositing the first material onto the bottom of the recess.

mmio l r MErALUZAI"IOI~ P lmClm~ U.S. Patent 6,171,468. Jan. 9, 2001 C.E. Thorn et al., assignors to Electrochemicals Inc., Maple Plain, Minn.

A method of applying an electri- cally conductive carbon coating to a non-conductive surface compris-

C - I E for nickel, silver, chrom, gold,

copper, paint, glass, and ceramics. R~kmes all nmtallic oxidm to ~=um ~ bond. 1009&

adhmlon over 1st coat. Pmsivatlon is el'm~;natad.

Recommended for u~ on Wafers and in the Ebcronic Circuit Board Industry.

N O W AVAILABLE AT P U M A C H E M I C A L

AN EXPANDED LINE OF PLATING, ANODIZING, pIIOSPHATING A~m

GALVANIZING PIROIDUCT~

w w w . p u m a c h e m i c a l . . c o m

~ Puma Chemical P.O. Box 67, Warne, NC 28909

Voice: See 211-7993 Fax: 828 389-4~23

Global : (~1-8Z8-389-3~74

Circle 064 on reader card or go to www.thru.to/webconnect

..~® ~ _ ~ ~ ~ © ® ~ © ® ~ ~ ® ~

Certainly not from our platinum cl~ plated anode.

..... '."~..: ~ 1 1 ~ ' ~ - ~ i l i ~ / l _ _ ~ k : ~ _ ~ l We cm=tom fabricate your anode Erom our p l a t l a m clad

n i o b i u m s t o c k . . . . 125 or 2 5 0 micrn inoh p l a U n u m clad , s i n g l e or double s i ded p la t inum, so l id or e x p a n d e d m e s h , t i t a n i u m / n i o b i u m f rame.

Q.ai~ ~ u ~)Vm= ~ A Om.,.e 0-..

• l l ~ l ~ 3am4~,oa,New Y o r k 718-481-8741 Fe,x718-481-9859

Circle 038 on reader card or go to www.thru.to/webconneet

114 Metal Finishing