sputtering apparatus
TRANSCRIPT
!ili!ii?i!?:/
METAL 1111~TMENT A P P A R A T U S U.S. Patent 6,171,409. Jan. 9, 2001 M. Hamacher et al., assignors to Henkel KG
A process for the chemical treat- ment of metal surfaces and instal- lation suitable therefore.
$ P ~ l l r S a l N 6 A P P A R A T U S
U.S. Patent 6,171,454. Jan. 9, 2001 T Weber et al., assignors to Robert Bosch GmbH, Stuttgart, Germany
A method for coating surfaces us- ing a facility having sputter elec- trodes.
$F~nrlrERMl~ TAR6Lr l "
U.S. Patent 6,171,455. Jan. 9, 2001 V. Pavate et al., assignors to Applied Materials Inc., Santa Clara, Calif.
A target for use in magnetron
sputtering of aluminum for form- ing metallization films having low defect densities.
R I M P l / Y ~ I I I I I ~ TO AOI I I I INE B l l l l m $1rlm O 0 1 / I m A ~ |
U.S. Patent 6,171,459. Jan. 9, 2001 S.P.. Leiphart, Boise, Idaho, assignor to Micron Technology Inc. Boise, Idaho
A method of depositing a first ma- terial onto a semiconductor sub- strate, which comprises a recess, having a bottom, and defined by sidewalls comprising a second material, the method comprising sputtering the first material onto the semiconductor substrate, to form a layer of sputter-deposited material; applying a first bias voltage to the substrate while si-
multaneously resputter ing the sputter-deposited material, the first bias voltage being suffi- ciently large to form a facet at the top of the recess; and applying a second bias voltage to the sub- strate, the second bias being suf- ficiently small to terminate the formation of the facet, while si- multaneously sputter-depositing the first material onto the bottom of the recess.
mmio l r MErALUZAI"IOI~ P lmClm~ U.S. Patent 6,171,468. Jan. 9, 2001 C.E. Thorn et al., assignors to Electrochemicals Inc., Maple Plain, Minn.
A method of applying an electri- cally conductive carbon coating to a non-conductive surface compris-
C - I E for nickel, silver, chrom, gold,
copper, paint, glass, and ceramics. R~kmes all nmtallic oxidm to ~=um ~ bond. 1009&
adhmlon over 1st coat. Pmsivatlon is el'm~;natad.
Recommended for u~ on Wafers and in the Ebcronic Circuit Board Industry.
N O W AVAILABLE AT P U M A C H E M I C A L
AN EXPANDED LINE OF PLATING, ANODIZING, pIIOSPHATING A~m
GALVANIZING PIROIDUCT~
w w w . p u m a c h e m i c a l . . c o m
~ Puma Chemical P.O. Box 67, Warne, NC 28909
Voice: See 211-7993 Fax: 828 389-4~23
Global : (~1-8Z8-389-3~74
Circle 064 on reader card or go to www.thru.to/webconnect
..~® ~ _ ~ ~ ~ © ® ~ © ® ~ ~ ® ~
Certainly not from our platinum cl~ plated anode.
..... '."~..: ~ 1 1 ~ ' ~ - ~ i l i ~ / l _ _ ~ k : ~ _ ~ l We cm=tom fabricate your anode Erom our p l a t l a m clad
n i o b i u m s t o c k . . . . 125 or 2 5 0 micrn inoh p l a U n u m clad , s i n g l e or double s i ded p la t inum, so l id or e x p a n d e d m e s h , t i t a n i u m / n i o b i u m f rame.
Q.ai~ ~ u ~)Vm= ~ A Om.,.e 0-..
• l l ~ l ~ 3am4~,oa,New Y o r k 718-481-8741 Fe,x718-481-9859
Circle 038 on reader card or go to www.thru.to/webconneet
114 Metal Finishing