spice model of 2sj683-tl-e (standard+bds model) in spice park
DESCRIPTION
SPICE MODEL of 2SJ683-TL-E (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.TRANSCRIPT
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Power MOSFET (Model Parameters) PART NUMBER: 2SJ683-TL-E MANUFACTURER: SANYO Body Diode (Model Parameters) / ESD Protection Diode
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
2
MOSFET MODEL
PSpice model parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
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3
Transconductance Characteristic
Circuit Simulation Result
Comparison table
-Id(A) gfs(S)
Error (%) Measurement Simulation
1 17.600 18.236 3.61
2 24.750 25.596 3.42
5 38.850 39.876 2.64
10 54.250 55.476 2.26
20 75.000 76.703 2.27
50 113.500 116.109 2.30
100 154.500 156.691 1.42
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V1
0Vdc
V2
-10
0
V3
0Vdc
U12SJ683-TL-E
V_V1
0V -1.0V -2.0V -3.0V -4.0V
I(V3)
0A
-20A
-40A
-60A
-80A
-100A
-120A
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit
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5
Comparison Graph Circuit Simulation Result
Simulation Result
-ID(mA) -VGS(V)
Error (%) Measurement Simulation
1 2.350 2.350 0.00
2 2.400 2.395 -0.21
5 2.490 2.487 -0.12
10 2.595 2.592 -0.12
20 2.730 2.742 0.44
40 2.940 2.962 0.75
60 3.110 3.135 0.80
80 3.270 3.284 0.43
100 3.415 3.418 0.09
120 3.550 3.541 -0.25
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6
0
U12SJ683-TL-E
V3
0Vdc
VDS
0VdcV1
-10
V_VDS
0V -30mV -60mV -90mV -150mV -210mV -265mV
I(V3)
0A
-6A
-12A
-18A
-24A
-30A
Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID= -33A, VGS= -10V Measurement Simulation Error (%)
RDS (on) mΩ 8.000 7.989 -0.14
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7
Time*1mA
0 50n 100n 150n 200n 250n 300n
V(W1:4)
0V
-1V
-2V
-3V
-4V
-5V
-6V
-7V
-8V
-9V
-10V
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD= -30V,ID= -65A ,VGS= -10V
Measurement Simulation Error (%)
Qgs nC 50.000 50.257 0.51
Qgd nC 50.000 50.437 0.87
Qg nC 290.000 192.240 -33.71
VDD
-30
I1TD = 0
TF = 5nPW = 600uPER = 1000u
I1 = 0I2 = 1m
TR = 5n
-
+
W1
ION = 0uAIOFF = 1mAW
I265
0
D2Dbreak
U12SJ683-TL-E
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8
Capacitance Characteristic
Simulation Result
VSD(V) Cbd(pF)
Error(%) Measurement Simulation
0.0 1200.000 1198.000 -0.17
1.0 670.000 668.000 -0.30
2.0 498.000 502.000 0.80
5.0 320.000 323.000 0.94
10.0 225.000 223.000 -0.89
15.0 180.000 179.000 -0.56
20.0 152.000 153.000 0.66
25.0 135.000 134.000 -0.74
30.0 121.000 121.800 0.66
Simulation
Measurement
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9
Time
4.0us 4.5us 5.0us 5.5us 6.0us 6.5us 7.0us 7.5us
V(U1:G) V(U1:D)/3
0V
-2V
-4V
-6V
-8V
-10V
-12V
-14V
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID= -33A, VDD= -30V VGS=0/-10V
Measurement Simulation Error(%)
td(on) ns 110.000 110.012 0.01
0
VDD-30.5Vdc
V2TD = 5u
TF = 5nPW = 10uPER = 20u
V1 = 0
TR = 5n
V2 = 20
U12SJ683-TL-E
L2
50nH
R2
50
R1
50
L1
30nH
RL
0.9
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10
V2
-2V1
0
0
V3
0Vdc
U12SJ683-TL-E
V_V2
0V -0.2V -0.6V -1.0V -1.4V -1.8V
I(V3)
0A
-10A
-20A
-30A
-40A
-50A
-60A
-70A
-80A
-90A
-100A
-110A
-120A
-130A
Output Characteristic
Circuit Simulation result
Evaluation circuit
VGS=-3V
-4
-6
-10
- 8
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11
VSDU12SJ683-TL-E
0
Vsense
0Vdc
V_VSD
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(Vsense)
1.0mA
10mA
100mA
1.0A
10A
100A
BODY DIODE SPICE MODEL Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
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12
Comparison Graph Circuit Simulation Result
Simulation Result
IDR(-A) VSD (-V)
%Error Measurement Simulation
0.001 0.470 0.468 -0.43
0.001 0.527 0.528 0.19
0.100 0.588 0.589 0.17
1.000 0.657 0.655 -0.30
2.000 0.682 0.679 -0.38
5.000 0.720 0.719 -0.14
10.000 0.755 0.756 0.13
20.000 0.800 0.799 -0.13
50.000 0.870 0.872 0.23
100.000 0.950 0.949 -0.11
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V1TD = 20ns
TF = 10nsPW = 1usPER = 100us
V1 = -9.4v
TR = 10ns
V2 = 10.6v
R1
50
0
U12SJ683-TL-E
Time
8.4us 9.2us 10.0us 10.8us 11.6us 12.4us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristic Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj ns 60.000 60.808 1.35
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Reverse Recovery Characteristic Reference
Trj= 60.00 (ns) Trb=160.00 (ns) Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
Measurement
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15
R1
0.001m
V1
0Vdc
0
U12SJ683-TL-E R2
100MEG
V_V1
0V -10V -20V -30V -40V -50V
I(R1)
0A
-2mA
-4mA
-6mA
-8mA
-10mA
ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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Zener Voltage Characteristic Reference