spatially resolved raman spectroscopy on single- and few ...coqusy06/slides/ensslin.pdf · raman...

21
Spatially resolved Raman spectroscopy on single- and few-layer graphene D. Graf, F. Molitor, and K. Ensslin Raman on graphene Spectral resolution Spatial resolution Solid State Physics Zürich C. Stampfer, A. Jungen, and C. Hierold, Micro and Nanosystems, ETH Zürich L. Wirtz, Institute for Electronics, Microelectronics, and Nanotechnology, Lille

Upload: others

Post on 18-Oct-2020

4 views

Category:

Documents


0 download

TRANSCRIPT

Page 1: Spatially resolved Raman spectroscopy on single- and few ...coqusy06/SLIDES/ensslin.pdf · Raman spectroscopy: - Laser excitation of 532 nm/ 2.33 eV - Spot size: two layers have higher

Spatially resolved Raman

spectroscopy on single- and

few-layer grapheneD. Graf, F. Molitor, and K. Ensslin

Raman on graphene

Spectral resolution

Spatial resolution

Solid State Physics Zürich

C. Stampfer, A. Jungen, and C. Hierold, Micro and Nanosystems, ETH Zürich

L. Wirtz, Institute for Electronics, Microelectronics, and Nanotechnology, Lille

Page 2: Spatially resolved Raman spectroscopy on single- and few ...coqusy06/SLIDES/ensslin.pdf · Raman spectroscopy: - Laser excitation of 532 nm/ 2.33 eV - Spot size: two layers have higher

Ref.: Ludger Wirtz and Angel Rubio, Solid State Communications 131, 141 (2004)

Phonon spectrum of graphite

- does the phonon spectrum depend on the number of layers ?

Page 3: Spatially resolved Raman spectroscopy on single- and few ...coqusy06/SLIDES/ensslin.pdf · Raman spectroscopy: - Laser excitation of 532 nm/ 2.33 eV - Spot size: two layers have higher

Raman spectrum of graphite

- does the phonon spectrum depend on the number of layers ?

EL=2.33eV

Page 4: Spatially resolved Raman spectroscopy on single- and few ...coqusy06/SLIDES/ensslin.pdf · Raman spectroscopy: - Laser excitation of 532 nm/ 2.33 eV - Spot size: two layers have higher

Raman spectrum of graphite

kK

phonon

at point, k~0

G, overtone G’

(1582 cm-1)

Single-resonant

EL=2.33 eV

kK

phonon

close to K point, k>0

elastic scattering D

(~1350 cm-1)

kK

2 phonon

close to K point, k>0

D‘ (~2700 cm-1)

Double-resonant

EL=2.33eV

Page 5: Spatially resolved Raman spectroscopy on single- and few ...coqusy06/SLIDES/ensslin.pdf · Raman spectroscopy: - Laser excitation of 532 nm/ 2.33 eV - Spot size: two layers have higher

Spatial resolution: AFM

Page 6: Spatially resolved Raman spectroscopy on single- and few ...coqusy06/SLIDES/ensslin.pdf · Raman spectroscopy: - Laser excitation of 532 nm/ 2.33 eV - Spot size: two layers have higher

Raman spectra of single-

and double layer graphene

1 μm1

12

SiO2

1

2

Scanning force microscope

1 μm

Scanning confocal

Raman spectroscopy:- Laser excitation of 532 nm/

2.33 eV

- Spot size:

D’G

Page 7: Spatially resolved Raman spectroscopy on single- and few ...coqusy06/SLIDES/ensslin.pdf · Raman spectroscopy: - Laser excitation of 532 nm/ 2.33 eV - Spot size: two layers have higher

Raman mapping:

intensity of G-line

1 μm1

12

SiO2

1

2

Scanning force microscope

1 μm

Scanning confocal

Raman spectroscopy:- Laser excitation of 532 nm/

2.33 eV

- Spot size:

two layers have higher G-line intensity, slightly different peak position

Page 8: Spatially resolved Raman spectroscopy on single- and few ...coqusy06/SLIDES/ensslin.pdf · Raman spectroscopy: - Laser excitation of 532 nm/ 2.33 eV - Spot size: two layers have higher

Raman mapping:

intensity of G-line

1 μm1

12

SiO2

1

2

Scanning force microscope

1 μm

Scanning confocal

Raman spectroscopy:- Laser excitation of 532 nm/

2.33 eV

- Spot size:

Page 9: Spatially resolved Raman spectroscopy on single- and few ...coqusy06/SLIDES/ensslin.pdf · Raman spectroscopy: - Laser excitation of 532 nm/ 2.33 eV - Spot size: two layers have higher

Raman mapping:

position of G-line

Page 10: Spatially resolved Raman spectroscopy on single- and few ...coqusy06/SLIDES/ensslin.pdf · Raman spectroscopy: - Laser excitation of 532 nm/ 2.33 eV - Spot size: two layers have higher

Raman spectra of single-

and double layer graphene

1 μm1

12

SiO2

1

2

Scanning force microscope

1 μm

Scanning confocal

Raman spectroscopy:- Laser excitation of 532 nm/

2.33 eV

- Spot size:

D’G

Page 11: Spatially resolved Raman spectroscopy on single- and few ...coqusy06/SLIDES/ensslin.pdf · Raman spectroscopy: - Laser excitation of 532 nm/ 2.33 eV - Spot size: two layers have higher

Raman mapping:

FWHM of the D‘ line

1 μm1

12

SiO2

1

2

Scanning force microscope

1 μm

Scanning confocal

Raman spectroscopy:- Laser excitation of 532 nm/

2.33 eV

- Spot size:

two layers have broader G-line, different peak position

Page 12: Spatially resolved Raman spectroscopy on single- and few ...coqusy06/SLIDES/ensslin.pdf · Raman spectroscopy: - Laser excitation of 532 nm/ 2.33 eV - Spot size: two layers have higher

Raman mapping:

FWHM of the D‘ line

1 μm1

12

SiO2

1

2

Scanning force microscope

1 μm

Scanning confocal

Raman spectroscopy:- Laser excitation of 532 nm/

2.33 eV

- Spot size:

two layers have broader G-line, different peak position

Raman: FWHM of D‘ line

1 μm

Page 13: Spatially resolved Raman spectroscopy on single- and few ...coqusy06/SLIDES/ensslin.pdf · Raman spectroscopy: - Laser excitation of 532 nm/ 2.33 eV - Spot size: two layers have higher

D‘ line for single layer graphene

Related work: A.C. Ferrari et

al., cond-mat/0606284

Page 14: Spatially resolved Raman spectroscopy on single- and few ...coqusy06/SLIDES/ensslin.pdf · Raman spectroscopy: - Laser excitation of 532 nm/ 2.33 eV - Spot size: two layers have higher

D‘ line for double layer graphene

Related work: A.C. Ferrari et

al., cond-mat/0606284

Page 15: Spatially resolved Raman spectroscopy on single- and few ...coqusy06/SLIDES/ensslin.pdf · Raman spectroscopy: - Laser excitation of 532 nm/ 2.33 eV - Spot size: two layers have higher

Detecting single layer graphene

Page 16: Spatially resolved Raman spectroscopy on single- and few ...coqusy06/SLIDES/ensslin.pdf · Raman spectroscopy: - Laser excitation of 532 nm/ 2.33 eV - Spot size: two layers have higher

What about the D-line?

1 μm1

12

SiO2

1

2

Scanning force microscope

1 μm

Scanning confocal

Raman spectroscopy:- Laser excitation of 532 nm/

2.33 eV

- Spot size:

D’G

Page 17: Spatially resolved Raman spectroscopy on single- and few ...coqusy06/SLIDES/ensslin.pdf · Raman spectroscopy: - Laser excitation of 532 nm/ 2.33 eV - Spot size: two layers have higher

Raman mapping:

intensity of the D line

kK

phonon

close to K, M point, k>0

Momentum restoring:

elastic scattering D

Double-resonant 1) Crystallite grain size,

symmetry breaking

[Tuinstra and Koenig, 1970]

2) Defects, disorder in general

[Y. Wang et al, 1990]

Scanning force microscope

1 μm1

12

SiO2

Raman: Integrated D line intensity

1 μm

Symmetry breaking

and defects

at edges and

boundaries,

not within the flake.

Page 18: Spatially resolved Raman spectroscopy on single- and few ...coqusy06/SLIDES/ensslin.pdf · Raman spectroscopy: - Laser excitation of 532 nm/ 2.33 eV - Spot size: two layers have higher

Raman mapping:

position of D-line

1 μm1

12

SiO2

1

2

Scanning force microscope

1 μm

Scanning confocal

Raman spectroscopy:- Laser excitation of 532 nm/

2.33 eV

- Spot size:

G

D

Page 19: Spatially resolved Raman spectroscopy on single- and few ...coqusy06/SLIDES/ensslin.pdf · Raman spectroscopy: - Laser excitation of 532 nm/ 2.33 eV - Spot size: two layers have higher

Raman mapping:

intensity of G-line

Page 20: Spatially resolved Raman spectroscopy on single- and few ...coqusy06/SLIDES/ensslin.pdf · Raman spectroscopy: - Laser excitation of 532 nm/ 2.33 eV - Spot size: two layers have higher

Raman mapping:

relative intensity of G/D‘-line

Page 21: Spatially resolved Raman spectroscopy on single- and few ...coqusy06/SLIDES/ensslin.pdf · Raman spectroscopy: - Laser excitation of 532 nm/ 2.33 eV - Spot size: two layers have higher

Conclusions Experiment:

Davy Graf,

Françoise Molitor,

and Klaus Ensslin

Solid State Physics,

ETH Zürich, Switzerland

Christoph Stampfer,

Alain Jungen,

and Christofer Hierold

Micro and Nanosystems,

ETH Zürich, Switzerland

Theory:

Ludger Wirtz

Institute for Electronics,

Microelectronics, and

Nanotechnology (IEMN),

59652 Villeneuve d'Ascq,

France

Raman: FWHM D‘

Raman: Intensity D

• Raman spectroscopy:

an alternative to scanning

force microscopy

• Monolayer sensitivity

(single to double layer)

• Defects/symmetry breaking

at the edge (not within the

flakes)

D. Graf et al., cond-mat/0607562, submittedRelated work: A.C. Ferrari et al., cond-mat/0606284,

A. Gupta et al., cond-mat/0606593