solution for portable customer

www.onsemi.com

1

Q2 04

On semiconductor

2 www.onsemi.com

Standard components

Micro Integration

Du

ple

xer

RF/IF

RF Detector

FET

RFModulation

Synthesizer

Receiver

PA Driver

Display

Flash Light

White LED Driver

Power Management

DC-DCBuckBoost

ChargePump

LDO

VoltageDetector

MotorDriver

uP ResetSupervisory

PM ASIC

AudioAmplifier

USB & SIMInterface

Charge control

Charge Controller

Pass Elements

ESD+EMI filter

Key PAD

Audio

LCD Display

PA

Package Roadmap

Baseband(DSP, MCU & Memory)

ON Solutions for Cellular Phones

Megapexial Camera

Bottom Connector

SIM&MMC Interface

USBInterface

OLED driver

Analog Switches

Transistor

TVS/Zener

MiniGateTM Logic

BRTs

Schottky diode OP amplifier

Comparator

Onsemi solution

Not Onsemi’s

3 www.onsemi.com

Baseband(DSP, MCU & Memory)

Baseband(DSP, MCU & Memory)Battery

Charger

Inner Battery Charger

ResetController

LDO(RF)SIM CardInterface

DC/DCConverter

SIM/ SMART Card

LDO(Baseband)

RFRF

PA controller

NCP4523,MC78PCNCP4561,

MC33761/2

NCP500, 511(150mA); NCP512 (80mA)

MC33765 (5 outputs)

NCP1501NCP1510/1MBRM120

NCP300~5MAX809/810

NCP1800NTHD4P02NTHD3101

(or NTGS3441T1+MBRM120LT3) NCN6000

NCN6010

Over-voltageProtection IC

NCP345/6

White LEDDriver

NCP5007NCP1403

MBR0520LT1

VibratorDrivers

NCP5426MDC3105NUD3105

Audio Ampfor Speaker

& PolyphonicRingerNCP2890NCP4894NCP4896

* (Black) Analog products * (Blue) Integrated Power (TVS, Filter, Driver, MOSFET)• (Green) Standard Components• (Italic) New products

ON Solutions for Cellular Phones

MC33170

RF Power DetectorNCS5000

MicroIntegrationTM

TVS array Driver

SMS05/15/24SM12

NZQA5V6MSQA6V1NSQA6V81PMT16A

SMS05/12/24CSMF05/12/24C

MUN seriesDTA seriesDTC seriesMDC3105

Filter

NZF220DFNZF220TTSTF202-22

NZMM7V0T4NUF6105

Mini-gate Logic Analog Switch

NLAS4599NLAS44599NLAS4501

NLAS323/4/5

MC74VHC1GxxMC74HC1Gxx

NL17SZxxNL27WZxx

Small signal

MBRM120MBR0520

MMBT35200NSR15WT1

Stereo AudioAmp for

MP3 HeadsetNCP2809

MOSFET

NTGS3441/3NTHS2101NTJD4105NTR4101

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Conversion Factor:转换因子：V = “X “ / [(2/267)*(0.1)*(0.5)]V = 7.98KV

Condition 1: Applied 8kV ESD contact pulse using a high frequency test board (Low inductance, ideal case).状况 1 ：使用高频测试板施加 8kV ESD 接触脉冲 ( 低电感，理想状况 ) 。

Input: 8KV ESD Pulse, IEC 61000-4-2输入： 8KV ESD 脉冲， IEC 61000-4-2

Output: Varistor, VA-C1005-5R5E输出：变阻器， VA-C1005-5R5E

Output: ON Semiconductor, MSQA6V1输出：安森美半导体， MSQA6V1

Output: Competition, SMF05输出：竞争者， SMF05

5V/div

High clamping Voltage (35V)高钳位电压 (35V)

5V/div

Low clamping Voltage (7V)低钳位电压 (7V)

5V/div

Clamping Voltage (8V)钳位电压 (8V)

TVS vs Varistors ESD protection comparison安森美半导体、变阻器和竞争者的 ESD 响应比较

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5V/div

Better response evenwith the effect ofparasitic (V=Ldi/dt)即使有寄生效应 (V=Ldi/dt)也有较好的响应

Condition 2: Applied 8kV ESD contact pulse using a normal test board (Inductance =10nH, real board case)状况 2 ：使用正常测试板施加 8kV ESD 接触脉冲 ( 电感 =10nH ，真实状况 ) 。

Conversion Factor:转换因子：V = “X “ / [(2/267)*(0.1)*(0.5)]V = 7.98KV



Output: ON Semiconductor, MSQA6V1输出：安森美， MSQA6V1 Output: Competition, SMF05 输出：竞争者，

5V/div

High clamping Voltage (40V)高钳位电压 (40V)

5V/div

Bad response dueto the parasitic effect (V=Ldi/dt)寄生效应 (V=Ldi/dt)造成响应变差


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IEC 61000-4-2 ESD pulses are very fast rise time (between 0.7 and 1nsec) IEC 61000-4-2 ESD 脉冲的上升时间很快 ( 在 0.7 和 1nsec 之间 )


Output: ON Semiconductor, MSQA6V1输出：安森美， MSQA6V1


Response timemeasured from 10% to 90% of the peak Voltage 15 nsec从峰值电压 10% 到 90% 测量的响应时间： 15 nsec

Response timemeasured from 10% to 90% of the peak Voltage 10 nsec从峰值电压 10% 到 90% 测量的响应时间： 10 nsec

Test condition: 测试条件：Applied 8kV ESD contact pulse using a high frequency test board (Low inductance, ideal case).使用高频测试板施加 8kV ESD 接触脉冲 ( 低电感，理想状况 ) 。


7 www.onsemi.com

TVS vs varistor Package Size Comparison封装尺寸比较

On Semiconductor SC88(2 x 2 x 1)

安森美半导体 SC88

On Semiconductor SOT-563(1.6 x 1.6 x 0.60)

安森美半导体 SOT-563

Varistor(3.2 x 1.6 x 0.9)

变阻器

尺寸英寸毫米

尺寸英寸毫米

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TVS vs Varistor Conclusion结论

15nS10nSResponse Time响应时间

Lifetime寿命

360pF90pFCapacitance电容

0.900.55Height Profile高度

3.2 x 1.61.6 x 1.6Foot Print占用面积

4uA0.04uALeakage漏电

20V11VSurge浪涌

35V7VESD

Varistor变阻器

ON Semiconductor(MSQA6V1)

安森美半导体

9 www.onsemi.com

• IC’s must be protected because most of them cannot withstand ESD conditions higher than 2kV.

• ON Semiconductor devices showed the best performance to suppress ESD pulses generated by the IEC 61000-4-2 ESD standard.

• PCB lay-out is critical to improve ESD protection and reduce the parasitic effects (V=Ldi/dt).

• Varistors do not offer an effective ESD protection because their clamping voltage is too high. They cannot be used for protection in high speed data lines either because of their high capacitance.

• Semtech’s devices are more sensitive to board parasitic effects, which could be due to higher package’s inductance.

TVS ESD Conclusion

10 www.onsemi.com

TVSTVS - Dual / Multi-Line Array Protection

Device: Package: Circuit:

SL05 Series

SOT23

SM05 Series

MMBZ5V6ALT1 Series

MMBZ15VDLT1

MMBZ27VCLT1

SMS05 Series SC74

MMQA5V6LT1 Series

DF6A6.8FU SC88

NUP6101 Micro8


MSQA6V1W5T1

SMF05T1

NSQA6V8AW5T2 (7pF)

SC88A

NZQA5V6,6V2,6V8XV5T1

NZQA5V6AXV5T1(20pF)

NZQA6V8AXV5T1 (15pF)

SOT553

NUP4104XV6T1

SOT563

NUP4102XV6T1 (15pF)

NUP5102XV6T1

SMF05C, 12C , 24C SC88

SMS05C, 12C, 24C SC74

Smallest package (1.6x1.6mm)

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TVS Application: Bottom Connector

NZQA5V6XV5T1; NZQA6V2XV5T1; NZQA6V8XV5T1; NZQA8V2XV5T1;

NZQA5V6AXV5T1; NZQA6V8AXV5T1;

MSQA6V1W5T2; SMF05T1; NSQA6V8AW5T2 4 Uni-Directional ESD Protection Packages: SC-88A (for MSQA, SMF05, NSQA)

SOT-553 (for NZQA series)

Benefits: Integrated Solution Increase Reliability & Quality Saving Board Space Low Capacitance (as low as 12pF typical

for NZQA6V8A and NSQA6V8A)

SMF05C; NUP5102VX6 5 Uni-Directional ESD Protection Packages: SC-88 ( SMF05C)

SOT-563 (NUP5102) I C t o b e P r o t e c t e d

I C t o b e P r o t e c t e d

IC t

o be

Pro

tect

edIC

to

be

Pro

tect

ed

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TVS Application: SIM Card Interface

NUP4101FCT1; NUP4102XV6T1 4 Bi–Directional ESD Protection Low Capacitance ( <10pF @ 3V) Package:

NUP4101FCT1: Flip-ChipNUP4102VX6T1: SOT-563

Benefits:ESD Immunity as per IEC61000-4-2 Level 4Low Capacitance for fast data rateLow PCB area (51 x 51 mil for NUP4101FCT1)

NZQA6V8AXV5T1; NSQA6V8AW5T2 4 Unidirectional Array for Protection Low Capacitance ( <7pF @ 3V) Package: NZQA6V8AXV5T1: SOT-553 NSQA6V8AW5T2: SC-88A

OR

VccSIMDATA

SIMCLK

SIMRST

NZQA6V8AXV5T1 MSQA6V1W5T2

VccSIMDATA

SIMCLK

SIMRST

NUP4101FCT1 NUP4102VX6T1

13 www.onsemi.com

ESD+EMI filter applications

LCD Display • ESD Protection/EMI Filtering

Keypad• ESD Protection/ EMI Filtering

SIM Card, USB/MMC Interface• ESD Protection/EMI Filtering

Microphone and Speaker• ESD Protection/EMI Filtering

Bottom Connector• ESD Protection/ EMI Filtering

Camera • ESD Protection/EMI Filtering

14 www.onsemi.com

EMI Types and Generation EMI 类型和产生

1.- Conducted EMI is noise fed back from a system onto the AC or DC power line or signal lines. This noise is in the frequency range of 10KHz to 30MHz. It usually has a common mode component and a differential mode component. The common mode component appears as a voltage on both line and neutral leads with respect to ground or earth while the differential mode appears between the line and neutral leads. To suppress conducted EMI, LC networks are usually used.传导 EMI 是从系统反馈到交流或直流电源线或信号线的噪声。这种噪声的频率范围从 10KHz 到 30MHz 。它通常有一个共模分量和一个差模分量。共模分量是施加在火线和中线上的对地电压。差模出现在火线和中线之间。为了抑制传导 EMI ，通常使用 LC 网络。2.- Radiated EMI comes in the form of electromagnetic waves radiating directly from the circuitry and leads of a system. A common example is the AC power cord of the system which can act as a transmitting antenna for radiated EMI. Ranging from 30MHz to 1GHz, this type of noise can be effectively suppressed by metal shielding around the source.辐射 EMI 以直接从系统电路和导线辐射出来的电磁波形式出现。常见的实例是系统的交流电源线作为辐射 EMI 的发射天线。频率范围从 30MHz 到 1GHz ，这种噪声可以被源周围的金属屏蔽有效抑制。Conducted EMI, ac power line 60Hz传导 EMI ，交流电源线 60Hz

Radiated EMI, high frequency clock辐射 EMI ，高频时钟

图 1 ：工厂中的线路源图 2 ：有高频噪声的 20MHz 时钟

15 www.onsemi.com

Frequency

100KHz 1.0MHz 10MHz 100MHz 1.0GHz 10GHz20*LOG10(2*V(R-Receiver:1))

-80

-60

-40

-20

-0

Discrete Pi-Filter

Sharp Rise Smooth Rise

C1

0

R1

C2

L1, parasitic

1

2

Ground parasiticL1 > 2.8nH usually

Integrated Pi-Filter

0

R1

L2, parasitic

1

2

NZF22OTT1

Reduced parasiticL2 < 0.5nH

• Reduced package parasitic for better roll-off frequency response.

• Tighter tolerances for integrated components.

• Integrated ESD protection.

• Significant PCB space savings for optimized designs.

Frequency

100KHz 1.0MHz 10MHz 100MHz 1.0GHz 10GHz20*LOG10(2*V(R-Receiver:1))

-60

-40

-20

-0

Advantages of ON Semi’s integrated Filters versus discrete filters

ESD+EMI filter Performance Comparison Between Discrete and Integrated Filters

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ESD+EMI filter: Devices


LC03-6

SO8

SRDA05-4

NUF2101M SC59-6

NUF2441H ChipFET

NUF4401MN QFN 2x2


STF202 TSOP6

NUF2221W1 SC88

NZF220DF SC88A

NZF220T SC75

NZMM7V0T4 24 MLF

22 www.onsemi.com

ESD+EMI filter: Devices

Device: Package Circuit:

NUF2113FC

NUF2114FC

Flip Chip

NUF2222FC Flip Chip

NUF4105FCNUF4115FC

Flip Chip

NUF4107FC Flip Chip


NUF3101FC Flip Chip

NUF6105FC

NUF6115FC

NUF6106FC (12pf, low cap)

Flip Chip

NUF8101FC Flip Chip

NUF9001FC Flip Chip

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Benefits: Bi-Directional EMI Filtering Prevents Noise from

Entering/Leaving the System Low Power Loss by Integrated Low Resistance Replace 14 discrete components ESD Immunity as per IEC61000-4-2 Level 4

ESD+EMI filter Audio: Speaker Line

NUF2441FCT1(Available Jun’04)• EMI Filter with ESD Protection• Inductors Integrated 3.5nH • Low Resistance 0.32ohm Integrated• Package: ChipFET & Flip-Chip

Benefits: Ui-Directional EMI Filtering Low Power

Loss by Integrated Inductors Replace 12 discrete components ESD Immunity as per IEC61000-4-2 Level

4

OR

NUF2113FCT1(Available Q2’04)• EMI Filter with ESD Protection• Low Resistance 10ohm Integrated• Package: Flip-Chip

OR

Speaker

Audio processing and conversion

AD

Speaker


A

D

OR

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ESD+EMI filter Audio: Headset (Speaker + Microphone)

NUF2114FCT1• EMI Filter with ESD Protection• Integrated Solution• Package: Flip-Chip

Benefits: Bi-Directional EMI Filtering Prevents Noise from

Entering/Leaving the System Low Power Loss by Integrated Low Resistance Replace 14 discrete components ESD Immunity as per IEC61000-4-2 Level 4


A

D

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ESD+EMI filter Audio: Microphone and Audio Line

NUF2441HT1; NUF2441FC• EMI Filter with ESD Protection• Package:

ChipFETTM (for NUF2441HT1)Flip-Chip (for NUF2441FC)

Benefits: Bi-Directional EMI Filtering Prevents Noise

from Entering/Leaving the System Low PCB area Replace 10 discrete components ESD Immunity as per IEC61000-4-2 Level

4

Microphone/ Speaker

Vbias


A

D

NUF8101FCT1• Integrates the Filtering for 2 Microphone

Inputs, 4 Resistors for Biasing, and ESD Protection

• EMI Symmetrical (I/O) Low-Pass Filter• Package: Flip-Chip

Benefits: Low PCB area (2.0 x 2.5 mm2) Very thin package (0.65mm) ESD suppression on both input and

output pins (IEC61000-4-2 Level 4)

Microphone1Audio processing and conversion

A

D

Microphone2

Speaker1

Speaker2

NUF8101FCT1

26 www.onsemi.com

ESD+EMI filter Audio: Audio Line

NMF3501FC & NMF3502FC• -75dB @ 80MHz -1GHz• -60dB @ 1GHz – 2GHz• Two-stage Integrates Filter for Microphone

Inputs with Resistors for Biasing, and ESD Protection

• Package: Flip-Chip

Benefits: Low PCB area (1.2 x 1.7 mm2) Very thin package (0.65mm) Replace 30 discrete components ESD suppression on both input and output

pins (IEC61000-4-2 Level 4)

Microphone


A

DNMF3501FC NMF3501FC

Stage-1 Stage-2

27 www.onsemi.com

ESD+EMI filter Keypad

• NZMM7V0T4• 9 EMI/RFI Bi-Directional “Pi” Low Pass Filter• 4 x 4 mm Lead Less MLF Surface Mount Package• Replace 30 discrete components• Package: 24 PIN MLF

• NZF220DFT1• Dual EMI/RFI Bi–directional “Pi” Low–Pass Filters• Package: SC-88A

• NZF220TT1• Single EMI/RFI Bi–directional “Pi” Low–Pass Filters• Package: SC-75

ON’s FilterCPU

I1

I2

I3

I7

I8

I9

O1O2

O8O9

O3

O7

Benefits: Suppresses EMI/RFI Noise in Systems Subjected

to Electromagnetic Interference Small Package Size Minimizes Parasitic

Inductance, Thus a More “Ideal” Low Pass Filtering Response

28 www.onsemi.com

ESD+EMI filter Bottom Connector

NUF4105FCT1; NUF6105FCT1; • 4 & 6 Channel EMI Pi-Filter with ESD Protection• Two Bump Sizes Available

– 300m for NUF4105FC and NUF6105FC– 350m for NUF4115FC and NUF6115FC


Benefits: Low PCB area Reduced components count Wide freq. range rejection -35dB from 800MHz to 2.2GHz Low line capacitance for high data rate exchange

CP

U

NUF6105/06

NUF4105/15

NUF9001FCT1(Available May’04)• 10 Channel EMI Pi-Filter with ESD Protection• Two Bump Sizes Available

– 300m & 350m• Package: Flip-Chip

Benefits: Low PCB area (2.6mm x 2.6mm) Reduced components countLow line capacitance for high data rate exchange

CP

U

NUF9001FC

29 www.onsemi.com

ESD+EMI filter LCD Display

NUF4105FCT1; NUF6105FCT1; NUF6106FCT1 (21pF@ 2.5V),NUF9001• 4 , 6 &10 Channel EMI Pi-Filter with ESD Protection• Two Bump Sizes Available

– 300m for NUF4105FC and NUF6105FC– 350m for NUF4115FC and NUF6115FC



CP

U

NUF6105/06

NUF4105/15

CP

U

NUF4401

NUF4401MNT1(Available Jun’04)• 4 Channel EMI Pi-Filter with ESD Protection• 200 Ohms line resistor design for LCD application• Package: 2X2mm QFN package

30 www.onsemi.com

ESD+EMI filter Mega pixel Camera Interface

NUF6106FCT1 (21pF@ 2.5V)• 6 Channel EMI Pi-Filter with ESD Protection• Low Capacitance ([email protected]) for Mega pixel/ high speed dataline • Package: Flip-Chip


CP

U

NUF6106FC

CA

ME

RA

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ESD+EMI filter

NUF6106FCt1 –Low capacitance 6 channel EMI filter for high speed

NUF6106FCT1

32 www.onsemi.com

Vcc

SIMDATA

SIMCLK

SIMRST

in1

in2

in3

out1

out2

out3

NUF3101FCT1

ESD+EMI filter SIM Card Interface

NUF3101FCT1(Available in Jun 04) Integrated Filter with ESD Protection 3 channels are dedicated to data lines and 1

channel is for the supply voltage Package: Flip Chip (1.6X1.6mm)

33 www.onsemi.com

ESD+EMI filter Multimedia Card Interface

NUF4105FCNUF4115FC

in1

in2

in3

out1

out2

out3GND

Vcc

Vcc

MMCDATA

MMCCLK

MMCCMD

NZMM7V0T4• 9 EMI Bi-Directional “PI” Low Pass Filter• Package: 24 PIN MLF

NUF4105FCT1; NUF4115FC• 4 Channel EMI Pi-Filter Array for Data Lines with

ESD Protection• Two Bump Sizes Available

– 300m for NUF4105FCT1– 350m for NUF4115FC


Benefits: Low PCB area Reduced components count Wide frequency range rejection -35dB from 800MHz to 2.2GHz Low line capacitance for high data rate exchange

Benefits: Low PCB area Reduced components count Low parasitic inductance, providing a more ideal low pass filtering response

34 www.onsemi.com

ESD+EMI filter Multimedia Card Interface

NUF3101FC

in1

in2

in3

out1

out2

out3GND

Vcc

Vcc

MMCDATA

MMCCLK

MMCCMD

Benefits: Low PCB area Reduced components count Wide frequency range rejection

-30dB @ 800mHz - 1GH-25dB @1GHz – 2GHz

Low line capacitance, 20pF typical, for high data rate exchange

NUF3101FCT1 Integrated Filter with ESD

Protection 3 channels are dedicated to data

lines and 1 channel is for the supply voltage

Package: Flip Chip @ 300um

35 www.onsemi.com

DescriptionThis device is a 3 line EMI filter array with TVS diode design for SIM card application. Greater than -35 dB attenuation is obtained at frequencies from 800 MHz to 2.2 GHz. It also offers ESD protection – clamping transients from static discharges. ESD protection is provided across all capacitors.

Features EMI Filtering and ESD Protection Flipchip Moisture Sensitivity Level 1

Applications•Wireless Phones•Handheld Products•LCD Displays

Schedule Phase 0 approved Engineering Sample Now Production May 2004

ESD+EMI filter SIM card EMI filter NUF3101FCT1

NUF3101FCT1

36 www.onsemi.com

NUF3101FCT1 Integrated Filter with ESD Protection 3 channels are dedicated to data lines and 1

channel is for the supply voltage Package: Flip Chip

Vcc

SIMDATA

SIMCLK

SIMRST

in1

in2

in3

out1

out2

out3

NUF3101FCT1

ESD+EMI filter SIM Card Interface

Benefits: Low PCB area Reduced components count Wide frequency range rejection -35dB from 800MHz to 2.2GHz Low line capacitance for high data rate exchange

37 www.onsemi.com

NUF41054 channel filter+ 4 TVS diode

Flip Chip Package

NUF61056 channel filter

NUF6106 (Low-cap)6 channel filter

NUF900110 channel filter

NUF41074 channel filter +USB filter

NUF3101SIM Card filter

IntroducedIntroduced

20052005

20042004

ESD+EMI filter New Products

NZF220T/NZF220DSingle(SC-75)/ Dual filter(SC-

88A)

NZMM7V09 channel filter MLF24 pin

NUF4401MN4 channel filter 2mm QFN

NUF4402MN4 channel filter 1.6mm QFN

NUF8401MN8 channel filter 1.6X4mm DFN

NUF4404MN (Low-cap)4 channel filter 1.6mm QFN

NUF4801MN (Low cap) 4 channel filter/ 4 ESD diode

1.6X4mm DFN

NUF1001MN (Low-cap) 10 channel filter/4 ESD diode

1.6X5mm DFN

24 PIN MLF4X4mm

8 pin QFN2X2mm

8 pin QFN1.6X1.6mm

16 pin DFN1.6X4.0mm

NUF3201MM Card filter

38 www.onsemi.com


NUF2441FC2 channel LC

Speaker/Headset filter

Flip Chip Package

NUF2114FC2 channel Mic RC filter

NUF2113FC2 channel Headset RC filter


20052005

20042004NUF4111 MN4 channel Speaker and Mic RC+LC Filter in 2mm QFN

NUF4112MN4 channel Speaker and Mic

RC+ LC Filter in 1.6mm QFN

8 pin QFN2X2mm

8 pin QFN1.6X1.6mm

NUF4112FC3 channel Speaker and Mic

RC Filter

RC Filter LC Filter

39 www.onsemi.com


NUF8401• 8- line EMI filter • 1st 8 line filter in DFN package• Sample available : Aug 04• Production schedule: Sep 04 CMD 8 line Flip chip (1.5X4.0mm)

NUF4401• 4 Channel filter • Standard 8 leaded QFN pacakage• Sample available: NOW• Production schedule: Aug 04

NUF4402• 4 Channel filter • Smallest 4 line filter in QFN

package• Sample available : Aug 04• Production schedule: Sep 04

NUF8401 NUF4401 NUF4402

1.6 X4.0mm

2.0 X2.0mm1.6 X1.6mm

NUF8401MNT1 datasheet


40 www.onsemi.com


NUF6401

1.35 X3.0mm 1.35 X3.0mm

NUF6402NUF6401• 6- line EMI filter • 1st to provide in DFN package• Pin to Pin compatible Flip chip

packageCompetitor cross reference- CMD (CSPEMI306A)- STM (EMIF06-10006F1) - PHILIPS (IP4053CX15)

NUF6402• 4- line EMI filter + 4 ESD diode• 1st to provide in DFN package• Pin to Pin compatible Flip chip

packageCompetitor cross referenceCMD (CSPEMI307A)STM (EMIF04-10006F1)


41 www.onsemi.com

ESD+EMI filter QFN versus Flipchips

QFN package • Better Reliability and robust package• Better ESD rating and handling capability • All pins accessible after board mounted for debugging or

trouble shooting for design engineers• Better Filter characteristics than Flip-chip or CSP• 50% Less parasitic Inductance than Flip-chip or CSP • Increase chip mount density (400um chip to chip separation)• Competitive Pricing

42 www.onsemi.com

Flip chip or BGA (1.33X 3.0mm)

DFN package (1.35X3.0mm)

The DFN package• Pin to Pin replacement• Compatible Foot print • Same Case size Related Part# areNUF6401 and NUF6402

ESD+EMI filter Pin to Pin Compatibility

43 www.onsemi.com

DescriptionThis device is a 4 line EMI filter array for wireless applications. Greater than -35 dB attenuation is obtained at frequencies from 800 MHz to 2.2 GHz. It also offers ESD protection – clamping transients from static discharges. ESD protection is provided across all capacitors.

Features EMI Filtering and ESD Protection QFN 2x2mm Moisture Sensitivity Level 1

Benefits• Reduces EMI/RFI Emissions on a Data Line• Integrated Solution offers Cost and Space Savings• Reduces Parasitic Inductances Which Offer a More “Ideal” Low Pass Filter Response• Integrated Solution Improves System Reliability

Schedule Phase 0 approved Engineering Sample May 2004 Production Q2 2004


NUF44001MN Product Preview

ESD+EMI filter 4 Channel EMI filter NUF4401MN(2.0MM)

44 www.onsemi.com

ESD+EMI filter 4 Channel EMI filter NUF4105MN (QFN1.6MM)



Features EMI Filtering and ESD Protection QFN 1.6x1.6mm Moisture Sensitivity Level 1


Schedule Phase 0 approved Engineering Sample May 2004 Production Q3 2004

Low Capacitance Cline = 15pF max @ 3 volts

New Product

45 www.onsemi.com

ESD+EMI filter 5 Channel EMI filter NUF5105MN (1X 3MM)



Features EMI Filtering and ESD Protection QFN 1x3mm Moisture Sensitivity Level 1


Schedule Engineering Sample Q3 2004 Production Q3 2004

GND

New Product

46 www.onsemi.com

2

1

3

4

5

6

7

8

9

10

11

12

Rs

Rs

Rin

Rin

Rin

ESD+EMI filter

USB + 3 EMI filter NUF5107MN ( 1X 3MM)


DescriptionThis device is a 3 line EMI filter array for wireless applications. Greater than -35 dB attenuation is obtained at frequencies from 800 MHz to 2.2 GHz. It also offers USB filtering circuitry with ESD protection – clamping transients from static discharges. ESD protection is provided across all capacitors.

Features USB filtering circuit EMI Filtering and ESD Protection QFN 1X3mm Moisture Sensitivity Level 1


Schedule Engineering Sample Q3 2004 Production Q3 2004

New Product

47 www.onsemi.com

USB interface: Single Channel Transceiver NCN2500

The NCN2500 Integrated Circuit is a single channel transceiver designed to accommodate the physical USB Port with a microcontroller digital I/O. The part is fully USB compliant and supports the full 12 Mbps speed. On the other hand, the NCN2500device includes the pull−up resistors as defined by the USB−ECN new specifications.

Features• Compliant to the USB Specification, Version 2.0, Low and FullSpeed• Very Small Footprint Due to the QFN−16 Package• Integrated D+/D− Pull−Up Resistors• Operates Over the Full 1.5 V to 5.5 V Vbat Supply

Typical Application• Portable Computer• Cellular Phone

48 www.onsemi.com

11

10

3

4

14

1

12

6

15

9

2

5

16

13

7

D-

D+Vp

Vm

OE

DSPD

RCV

Vreg

SPND

GND

Vusb

LDO 3.3V

GND

3.3V

EN_RPU

VObus

EN_VObus

6

Vcc

VCC

3.3V

3.3V

3.3V

VCC

VCC

RP

U1

RP

U2

10

0k

S2

S1

S3

GND INT

ER

NA

L P

UL

L U

PR

ES

IST

OR

S C

ON

TR

OL

2

3

8 NC

S5

Vp

Vm

DSPD

DSPD

USB interface: Single Channel Transceiver NCN2500

49 www.onsemi.com

R2

33R

R3

33R

C3

1uF

C24.7uF

GND

GND

GND

µC

VCC

GND

C110uF

GND

Vreg12

DSPD1

RCV2

Vp3

Vm4

EN_VObus5

GND6

SPND7

OE9

D-10

D+11

VObus13

Vusb14

Vcc15

EN_RPU16

U1

NCN2500

1

2 5

6

U2NUP2201MR6

GNDVusb

Vusb

VBUS1

D-2

D+3

GND4

SH

IEL

D5

J1USB

GND

USB interface: NCN2500:TYPICALAPPLICATION

50 www.onsemi.com

Function MIC2550 MIC2551A NCN2500 Comments

USB version 2.0 2.0 2.0

USB Speed Low & Full Low & Full Low & Full

Vsupply 2.5V-5.25V 1.6V – 3.6V 1.5V – 5.5V The NCN2500 can operate over the full battery supply voltage range

3V reg. Integrated LDO Yes Yes Yes

3V reg. LDO Output Current 2.5mA 2.5mA 100mA The NCN2500 built-in DC/DC converter is capable to supply peripheral devices

Switched 3V reg. No Yes Yes

ECN compliant No No Yes The USB pull up resistor is integrated, according to the new USB/ECN specification ( save external component)

Package 16 pins MLFTSSOP14

16 pins MLFTSSOP14

QFN16 The NCN2500 is electrically and mechanically pin to pin compatible with either the MIC2550 or the MIC2551 16 pins MLF package

USB interface: NCN2500 / MICREL COMPARISON

51 www.onsemi.com

USB1T11A NCN2500 Comments

Vcc supply 3.0V - 3.60V 1.50 - 5.50V The 1.50V makes the NCN2500 suitable for any battery applications, particularly portable phone.

Vusb supply No dedicated pin 4.20V – 5.50V The Fairchild’s part can not operate straightforward with the power source supplied by the USB port.

USB ECN specifications

Not compliant Fully compliant The RPU1 and RPU2 resistors are integrated into the NCN2500, not in the Fairchild part

Vreg Not provided 3.30V LDO The built-in LDO make possible a stand alone application with the NCN2500.

Vusb Switch Not provided integrated Such a switch brings extra flexibility at system design level.

Digital Input Voltage Support up to 5V if external current clamps are provided

Support up to 5.5V without any external clamp

The NCN2500 operates without extra circuits to prevent over current on the digital pins

USB interface: NCN2500 / FAIRCHILD COMPARISON

52 www.onsemi.com

USB interface: ESD Protection

USB 1.1I/O Lines

+VBus

USB 2 Lines(1 Port)

4 Lines(2 Port)

1 Lines(1/2 Port)

SL05 SRDA05-4

NUP2201MR6

NUP4301MR6NUP2301MW6NUP1301ML3

LC03-6

USB 2.0I/O Lines

+VBus

USB I/O Lines

USB1.1USB1.1

NUP4201MR6

NUP4201DR2

USB2.0USB2.0

Low capacitance series <5pF for USB 2.0 and high speed I/O

53 www.onsemi.com

USB Interface ESD: Cross Reference (USB 2.0)

P/N: NUP4201DR2; NUP4201MR6

Package: SO-8; TSOP-6

Max. Cap: 5pF: 5pF

ESD: IEC61000-4-2

Surge: 300W; 300W

P/N: NUP2201MR6

Package: TSOP-6

Max. Cap: 5pF

ESD: IEC61000-4-2

Surge: 300W

P/N: NUP1301ML3

Package: SOT-23

Max. Cap: 1.5pF

ESD: IEC61000-4-2

P/N: USB208

Package: SOT-23-6

Max. Cap: 5pF

ESD: IEC61000-4-2

P/N: NUP4301MR6

Package: TSOP-6

Max. Cap: 5pF

ESD: IEC61000-4-2

P/N: NUP2301MW6

Package: SC-88

Max. Cap: 5pF

ESD: IEC61000-4-2 Under

Proposal Development

P/N: SRV05-4

Package: SOT23

Max. Cap: 5pF

ESD: IEC61000-4-20

Surge: 300W

P/N: SLxx

Package: SOT23

Max. Cap: 5pF

ESD: IEC61000-4-2

P/N: CM1210-04ST

Package: SOT23-6

Max. Cap: 1.3pF

ESD: IEC61000-4-2

P/N: CM1210-02ST;

CM1210-02SC

Package: SOT143-4;

SC70-5

Max. Cap: 1.3pF

ESD: IEC61000-4-2

P/N: CM1210-01ST;

CM1210-01SC

Package: SOT23-3;

SC70-3

Max. Cap: 1.3pF

ESD: IEC61000-4-2CAMD

2 ports (4 lines)1 port (2 lines)1 line

54 www.onsemi.com


P/N: PUSB3B;

PUSB6B

Package: SO-8

Max. Cap:15pF; 15pF

ESD: IEC61000-4-2

Surge: 500W; 500W

P/N: PSR05

Package: SOT-143

Max. Cap: 10pF

ESD: IEC61000-4-2

Surge: 500W

P/N: USB208

Package: SOT-23-6

Max. Cap: 5pF

ESD: IEC61000-4-2

P/N: USB004

Package: SOT-143

Max. Cap: 6pF

ESD: IEC61000-4-2

ProTek Device

P/N: SRDAxx-4

Package: SO-8

Max. Cap: 15pF

ESD: IEC61000-4-2

Surge: 500W

P/N: SR05

Package: SOT-143

Max. Cap: 10pF

ESD: IEC61000-4-2

Surge: 500W

P/N: SLxx

Package: SOT23

Max. Cap: 5pF

ESD: IEC61000-4-2


55 www.onsemi.com



P/N: USB6Bx;

Package: SO-8

Max. Cap: 25pF

ESD: IEC61000-4-2

Surge: 500W

P/N : SRDA05-4R2

Package: SO-8

Max. Cap: 10pF; 15pF

ESD: IEC61000-4-2

Surge: 500W: 500W

P/N: LC03-6R2

Package: SO-8

Max. Cap: 25pF

ESD: IEC61000-4-2

Surge: 2000W

P/N: SL05T1

Package: SOT23

Max. Cap: 5pF

ESD: IEC61000-4-2

P/N: SRLC05

Package: SOT-143

Max. Cap: 6pF (typical)

ESD: IEC61000-4-2

Surge: 200W

P/N: USB6B1

Package: SO-8

Max. Cap: 14pF (typical)

ESD: IEC61000-4-2

Surge: 500W

Microsemi

P/N: SP0502AAHT

Package: SOT-143

Max. Cap: 6pF

ESD: IEC61000-4-2

Littelfuse

56 www.onsemi.com

USB Interface – ESD+EMI Filter

USB 1.1ESD

(I/O Lines)+

VBus

+EMI

(Filter)

Upstream FilterDownstream Filter

NUF2101MW6

USB 2.0

NUF2101

NUF2101XV6

NUF2221W1T2

STF202

NUF2221XV6

Seeking market partnershipRequire Common Mode Choke

(Detail on next page)


Under DevelopUnder

Develop

ProposalProposal

57 www.onsemi.com

P/N: PACUSB-U1/U2/U3

Package: SOT-23 or SC70

Rs: 15, 22, 30

P/N: STF-201;

NUF2101MW6;

NUF2101XV6;

Package: TSOP-6; SC-88; SOT-563

Rs: 22

P/N: STF202-22

NUF2221W1T2;

NUF2221XV6;

Package: TSOP-6; SC88; SOT-563

Rs: 22

Proposal Under Development

P/N: SPUSB1xJT

Package: SC70-6

Rs: 12, 22, 33

Littelfuse

P/N: LX7201-xx

Package: SOT-23

Rs: 15, 22

P/N: LX7202-xx

LX7203-xx

Package: SOT-23, SC70-6L

Rs: 15, 22Microsemi

P/N: USBDFxxW5

Package: SOT323-5L

Rs: 15, 33

P/N: USBUFxxW6

Package: SOT-323-6L

Rs: 15, 22, 33

P/N: PACUSB-200

Package: 16 pin QSOP

Rs: 33

P/N: PACUSB-100

Package: 8 pin MSOP

Rs: 33

CAMD

P/N: STF201-xx

Package: SOT-23 6L

Rs: 22, 30

P/N: STF202-xx

STF203-22

Package: SOT-23, SC70

Rs: 22, 30

Downstream - HostUpstream - Peripheral

USB Interface ESD+EMI: CrossReference(Filter)

58 www.onsemi.com

USB Interface ESD+EMI: application

NUF2221 & STF202

Peripheral (Upstream)

NUF4107FCin1

in2

in3

out1

out2

out3

GND

Vbus

Vbus

D1

D2

D3

NUF2221W1T2; STF202-22• 2 Line Termination, EMI Filtering and

ESD Protection for Upstream USB Port• Integrated Pull-up Resistor• VCC Protected by Integrated Clamping Diode• Package: SC-88 (for NUF2221)

TSOP-6 (for STF202)NUF4107FCT1• 4 Channel EMI Filtering with ESD Protection for

Data Lines• USB 1.1 Filtering Provided with Speed

Detection• Flip-Chip Package

Benefits: IEC61000-4-2 Level 4, ESD Protection Small PCB space Up to 27 discrete components replaced

Vcc

D4out4in4

USB D-

USB D+ In+

In-

out+

out-

59 www.onsemi.com

• The driver is activated with + logic voltage/current.

• The driver controls the coil of the relay.

• The integrated Zener diodes protect the FET from the inductor’s kick back when it is deactivated.

• The relay controls the power lines through its contacts.

ON Semi’s device

VCC

uP

VDD

Relay/Motor

Ch1 – VGS

Ch2 – ID

Ch3 - VDS

Vibrator DriverIntegrated Inductance Load Driver

SOT-23

60 www.onsemi.com

Vibrator Driver NUD3105 Inductive Load Driver

Description NUD3105 is a MicroIntegration™ device designed to provide a robust driver interface between sensitive control circuits and inductive DC loads. It is optimized to drive relays and other loads from a 3V to 5V rail, and can drive relay coils up to 2.5 watts at 5V.

Benefits Efficient and easy interface to control logic Reliable, robust performance Replaces 3 to 6 discrete devices; saves board space Eliminates the need for a separate diode across the load No need to prevent this possibility with extra components

Applications Telecom line cards, modems, fax, answer machines Vibrator driver for cell phones and pagers Desktop computers, peripherals, copiers Consumer electronics, set top boxes Small appliances, white goods Security systems, ATE Solenoid driver Automotive relays, motor controls, lamp drivers

Features Low input drive current Back-to-front transient isolation is inherent Single package integration Integrated free-wheeling diode Guaranteed OFF state if input connection is lost

More Information Online See http://www.onsemi.com/

– Datasheet: NUD3105/D– Case outline– Samples

Ordering Information NUD3105LT1 SOT23 3kU/reel

SOT-23

NUD3105 – MOSFET Drive

Replace 5 discrete!

61 www.onsemi.com

Vibrator Driver NUD3105:

Existing PC board Same PC board (with Integrated relay driver)

Copper traces

ADD JUMPER

“But you’re sole source…”Drop-in replacement on existing PC Board

62 www.onsemi.com

MOSFET Focus Area

30 1400200-250 600 80060 100 500 900

5

20

15

10

25

30

35

>40

Cellular phone

Handheld productsDC-DC converter,Notebook PC

PC Motherboard

VRM

Automotive powerSteering

DC 48V input DC-DC converter,Color monitor image correction switch

OA equiments,Automotive parts (motor solenoid

driver,DC12-24V

input DC-DC)

Back-up Power Supply

Inverter for Lighting

AC adapter(Notebook, Portable

VCD,DVD)

AC200V power supply

Color monitor(high voltage circuit)

AC100V SMPS

Drain Current (A)

VDS (V)

Focus area

63 www.onsemi.com

• HD3E & HD3E-RP (1-60V): • Low voltage planar technology: Figure of Merit equals Low RDS(ON) verses low

gate charge. Best for quick switching applications.低压平面技术：特性为低 RDS(ON) 和低栅极电荷。最适合快速开关应用

• TRENCH (1-30V): 沟道 (1-30V)

• Low voltage trench technology: Figure of Merit equal Low RDS(ON) verses die size. Best for lowest RDS(ON) applications.低电压沟道技术：特性为低 RDS(ON) 和小芯片尺寸。最适合低 RDS(ON) 的应用

• HD-Plus (1-250V): • Low and Medium voltage planar technology: Combines the use of MOSFET cells

with poly resistors, capacitors, diodes and logic MOSFETs. Create simple analog circuits. For smart discretes.低压中压平面技术：把 MOSFET 单元和聚酯电阻，电容，二极管和逻辑MOSFET 相结合。建立简单的模拟电路。高性能分立元件。

MOSFET Processes功率产品工艺

64 www.onsemi.com

MOSFET Process Roadmap

1Q02 2Q031Q032Q02 3Q02 4Q02 3Q03 4Q03

Pro

du

ct P

ort

folio

s

Market Segments

Trench 30 V N/P Ch • Computing

Trench 20V N-Ch • Portable & Battery

Trench

HD3E - 20 to 30 V, N & P Ch •Portables/Wireless•Computing

HD Plus

Trench

•Automotive•Computing

TMOS 7 - 40 to 250V, N & P Ch •Automotive•Computing

•Portable & Wireless

•Portable & Wireless

8V P-Channel

20V P-Channel

ProductionQ1 RTM

Development

65 www.onsemi.com

0

0.5

1

1.5

2

2.5

3

10 100 1000

Cell Density (MCells / in2)

Eff

ec

tiv

e C

ha

nn

el D

en

sit

y (

um

/ u

m2

)

Square Stripe

Figure 1

ON Semi

Competitors Today

Competitorsrecent

announcements

We offer the industry’s leading RDS(ON) because we have highesteffective channel density

MOSFET World Class Performance using Square Cell

66 www.onsemi.com

MOSFET in TSOP6/SOT23Package

Maximum Ratings

Part VDS VGS ID Type

Number (V) (V) VGS= 4.5V VGS= 2.5V VGS= 1.8V (A)SOT23

* NTR4502PT1 -30 ±20 0.350 0.175 - 1.95

* NTR4101P -20 ±8 0.050 0.060 0.800 2.40

* NTR2101P -8 ±8 0.050 0.065 0.100 3.50

* NTR4503N 30 ±20 0.140 - - 2.50

* NTR4103N 20 ±8 0.040 0.050 0.120 2.40

NTR4501N 20 ±8 0.080 0.100 0.140 2.40

TSOP6 SINGLE

* NTGS4111P -20 ±8 0.040 0.050 0.120 3.20

* NTGS2101P -8 ±8 0.026 0.035 0.046 5.60p-

p-

n-

* Trench

TSOP-63.0 X 3.0 mm

SOT-233.0 X 3.0 mm

67 www.onsemi.com

MOSFET in SC75/SC89/SOT563 Package

Maximum Ratings


Number Package (V) (V) VGS= 4.5V VGS= 2.5V VGS= 1.8V (A)SINGLE

* NTA4151P SC75 -20 ±8 0.800 1.200 1.800 0.30

* NTE4151P SC89 -20 ±8 0.800 1.200 1.800 0.30

* NTZS3151P SOT563 -20 ±8 0.175 0.240 0.300 0.77

* NTA4153N SC75 20 ±8 0.600 0.700 1.000 0.50

* NTE4153N SC89 20 ±8 0.600 0.700 1.000 0.50

* NTZS3154P SOT563 20 ±8 0.400 0.700 1.000 0.67

NTA4001N SC75 20 ±8 3.000 3.500 - 0.50DUAL

* NTZD3152P SOT563 -20 ±8 0.750 1.000 1.500 0.60COMPLEMENTARY

-20 ±8 0.600 1.000 1.500 0.40 p-

20 ±8 0.400 0.700 1.000 0.40 n-

p-

SOT563* NTZD3155C

p-

n-

* Trench

SC-751.6 X 1.6

mm

SC-891.6 X 1.6

mm

SOT-5631.6 X 1.6

mm

68 www.onsemi.com

MOSFET in SC88 Package

Maximum Ratings


Number Package (V) (V) VGS= 4.5V VGS= 2.5V VGS= 1.8V (A)SINGLE

* NTJ S4151P SC88 -20 ±12 0.110 0.145 0.200 0.80

* NTS4101P SC70 -20 ±12 0.400 0.450 0.650 0.80

* NTJ S3151P SC88 -12 ±8 0.060 0.090 0.160 0.92

* NTS2101P SC70 -8 ±8 0.230 0.315 0.400 0.92

NTS4001N SC70 30 ±20 1.200 2.200 4.000 0.50 n-DUAL

* NTJ D4152P SC88 -20 ±8 0.260 0.500 1.000 1.00

* NTJ D2152P SC88 -8 ±8 0.300 0.460 0.900 0.78

NTJ D4001N SC88 30 ±20 1.400 2.600 - 0.25

NTJ D4401N SC88 20 ±12 0.375 0.440 - 0.63COMPLEMENTARY

-8 ±8 0.300 0.400 0.600 0.40 p-

20 ±12 0.385 0.630 - 0.40 n-LOAD SWITCH

-8 ±8 0.300 0.400 0.600 0.40 p-

20 n-

p-

SC88

* NTJ D1155L SC88

* NTJ D4105C

p-

n-

* Trench

SC-882.0 X 2.0 mm

SC-702.0 X 2.0 mm

69 www.onsemi.com

MOSFET in ChipFET Package

Maximum RatingsPart VDS VGS RDS(on) (W) ID Type

Number (V) (V) VGS= 10V VGS= 4.5V VGS= 2.5V VGS= 1.8V (A)

SINGLE

* NTHS2101P -8 ±8 - 0.025 0.036 0.048 5.4

* NTHS4101P -20 ±8 - 0.034 0.040 0.052 6.7

NTHS5441 -20 ±12 - 0.055 0.083 - 5.3

NTHS5443 -20 ±12 - 0.065 0.110 - 4.7

* NTHS4111P -30 ±20 - 0.042 0.070 - TBD

NTHS4501N 30 ±20 0.035 0.055 - - 6.7

NTHS5404 20 ±12 - 0.030 0.045 - 7.2DUAL

* NTHD2102P -8 ±8 - 0.058 0.085 0.160 3.4

* NTHD4102P -20 ±8 - 0.095 0.135 0.210 2.8

* NTHD4401P -20 ±12 - 0.155 0.240 - 3.0

NTHD4502N 30 ±20 0.085 0.143 - - 3.9

NTHD4508N 20 ±12 - 0.075 0.143 - 4.2COMPLEMENTARY

20 - 0.095 0.135 0.210 2.8 p--20 - 0.080 0.115 - 3.1 n-20 - 0.155 0.260 - 2.1 p--20 - 0.080 0.115 - 3.1 n-

FETKY

* NTHD3101F -20 ±12 - 0.095 0.135 0.210 2.8 p-

NTHD4P02F -20 ±12 - 0.155 0.260 - 2.1 p-

NTHD4N02F 20 ±12 - 0.080 0.115 - 3.1 n-

p-

NTHC5513 ±12

n-

n-

p-

* NTHD3100C ±12

* Trench

70 www.onsemi.com

MOSFET in Flip-chip Package

Maximum Ratings


Number (V) (V) VGS= 4.5V VGS= 2.5V VGS= 1.8V (A)FLIP-CHIP BGA

* NTVS4101P -20 ±12 0.065 0.095 - 4.50

* NTVS4111P -20 ±8 0.021 0.024 - 5.50p-

* Trench

Flip Chip1.6 X 1.6 mm2.0 X 2.4 mm

RTM on Q1 05

71 www.onsemi.com

MOSFETSmall Outline Packages – SOT23, SC70

Package Channel VDSS Vishay AOS Farichild IR ONSOT23 N 30V Si2316DS AO3410 FDN372S IRLML2803 NTR4503N

0.085W 0.033W 0.050W 0.400W 0.140W

20V Si2314EDS AO3416 FDN339AN IRLML2502 NTR4103N0.033W 0.022W 0.035W 0.045W 0.040W

P 30V Si2343DS AO3401 FDN360P IRLML5203 NTR4502P0.086W 0.065W 0.125W 0.165W 0.350W

20V Si2323DS AO3415 FDN304PZ IRLML6402 NTR4101P0.039W 0.043W 0.052W 0.065W 0.085W

12V Si2333DS FDN306P IRLML64010.032W 0.040W 0.050W

8V Si2311DS NTR2101P0.045W 0.045W

SC70 N 30V Si1302DL AO7400 NTS4001N0.700W 0.100W 1.500W

25V Si1304DL0.350W

20V SI1300DL AO7408 MMBF2201N2.000W 0.070W 1.400W

P 30V AO74010.200W

20V Si1303EDL AO7411 NTS4101P0.430W 0.120W 0.360W

12V Si1307DL0.290W

8V Si1305DL NTS2101P0.280W 0.230W

RDS(ON) @ 4.5V

72 www.onsemi.com

MOSFET Small Outline Package – TSOP6

Package Channel VDSS Vishay AOS Farichild IR ONTSOP6 N-Single 30V Si3434DV AO6400 FDC645N IRLMS1503

0.034W 0.033W 0.030W 0.200W

20V Si3460DV AO6408 FDC637AN IRLMS1902 NTGS34460.027W 0.016W 0.024W 0.100W 0.045W

P-Single 30V Si3483DV AO6403 FDC658P IRF5800 NTGS34550.053W 0.058W 0.075W 0.150W 0.170W

20V Si3493DV AO6409 FDC604P IRLMS6802 NTGS34430.027W 0.045W 0.033W 0.050W 0.065W

12V Si3473DV FDC606P IRLMS4502 NTGS34330.023W 0.026W 0.042W 0.075W

8V Si3445ADV0.042W

N-Dual 30V Si3948DV AO6800 FDC6561AN0.175W 0.075W 0.145W

20V Si3900DV FDC6401N IRF58520.125W 0.070W 0.090W

P-Dual 30V Si3993DV AO6801 FD6506P0.245W 0.185W 0.280W

20V Si3983DV FDC6312P IRF58500.110W 0.115W 0.135W

12V Si3973DV FDC6318P0.087W 0.090W

8V Si3905DV0.125W

P+N 30V Si3552DV AO6601 FDC6333C0.360W+0.175W 0.185W+0.075W 0.220W+0.150W

20V Si3586DV AO6604 FDC6420C IRF58510.110W+0.060W 0.110W+0.060W 0.125W+0.070W 0.135W+0.090W

Loadswitch 20V Si3861DV FDC6330L NTGS1100L0.175W 0.125W 0.080W

12V Si3863DV0.105W

8V Si3865DV FDC6331L0.060W 0.055W

RDS(ON) @ 4.5V

73 www.onsemi.com

MOSFET Small Outline Packages – SC88

Package Channel VDSS Vishay AOS Farichild IR ONSC88 N-Single 30V Si1426DH FDG315N

0.115W 0.160W

25V Si1404DH FDG313N NTJS4405N0.350W 0.450W 0.350W

20V Si1406DH FDG327NZ0.065W 0.090W

P-Single 30V Si1433DH AO7405 FDG316P0.260W 0.200W 0.300W

20V Si1413DH FDG326P NTJS4151P0.115W 0.140W 0.095W

12V Si1417DH FDN306P NTJS3151P0.085W 0.040W 0.060W

8V Si1405DL0.125W

N-Dual 30V Si1900DL ^FDG6303N NTJD4001N0.700W 0.450W 1.500W

20V Si1912EDH AO7800 FDG6335N NTJD4401N0.280W 0.235W 0.300W 0.375W

P-Dual 30V ^FDG6304P1.100W

20V Si1913EDH AO7801 FDG6308P NTJD4152P0.490W 0.520W 0.400W 0.260W

12V Si1917EDH FDG6316P0.370W 0.270W

8V Si1905DL NTJD2152P0.600W 0.300W

P+N 30V Si1539DL ^FDG6321C1.700W+0.700W 1.100W+0.450W

20V Si1563EDH AO7600 FDG6332C0.490W+0.280W 0.520W+0.235W 0.420W+0.300W

12V Si1557DH0.535W+0.235W

8V Si1555DL NTJD4105L0.600W+0.385W 0.375W+0.300W

Loadswitch 20V FDG6324L NTJD1155L0.750W 0.300W

12V

8V Si1865DL FDG6331L0.215W 0.260W

RDS(ON) @ 4.5V

Go and replace Vishay , Farichild and IR NOW!

74 www.onsemi.com

Benefits Previously only available in SO-8 package (5 X 6 mm) Higher efficiency, reduced battery drain. Less voltage drop across the diode.

Features New smaller ChipFET™ in 8 lead package (1.9 X 3.0 mm) P-Channel MOSFET, VDDS= 20V, RDS(on)=130mΩ @ VGS = 4.5V SCHOTTKY VR=20V, with Low VF =0.32V @ 1 Amp

More Information Online See www.onsemi.com for:

– Datasheet –Case outline

Anode

Anode

Source

Gate

Cathode

Cathode

Drain

Drain

Description

Ultra-small eight lead package allows the integration of a MOSFET and Schottky Rectifier into one package. This is the smallest FETKY™ on the market with a maximum footprint of 3.10 X 2.00 mm to optimize board space. Independent pin out to each device to increase design flexibility, i.e. use Schottky as blocking diode or in parallel with body diode.

Applications

Any handheld application, including Cellular phones, Digital Cameras, MP3s, and PDAs that requires DC-DC converters (buck, buck-boost, and synchronous rectification).Charge control in portables

Product Availability: Samples Now Production Jan/03

NTHD4P02FT1-FETKY™ MOSFET Plus Schottky Rectifier

NCP1800

Rcomp

Ccomp Cout

NTHD4P02F

ISNSVSNS

ISEL

Vcc

CFLGCOMP/DIS

OUT

Gnd

Vin

Host or LedHost Processor

CinRisel60K

Rsns

FETKy

75 www.onsemi.com

MOSFET Power Management (Charging)

Schottky Rectifiers (Reverse current protection)Powermite MBRM120LT3 20V 0.45V@1A

MBRM120ET3 20V 0.53V@1A (Low leakage)MBRM130LT3 30V 0.45V@1A

SOD123 MBR0520LT3 20V [email protected]

Signal MOSFETsTSOP-6 NTGS3441 3.3A [email protected]

NTGS3443 3.1A [email protected]

ChipFET NTHS5441 3.9A [email protected] NTHS4101P 4.8A [email protected]

FETky (MOSFET/Schottky/ 肖特基 )

ChipFET NTHD4P02F 20V, 1.0A [email protected] NTHD3101F 20V,2A

MBR0520 (20V,0.5A) SOD123 Schottky

MBRM120 (20V,1A) SOD123 Schottky

Two in one

76 www.onsemi.com

MOSFET FETky Applications

Boost using N-Channel FETKy NTHD4N02FT1

NTHD4N02F

Buck using N-Channel FETKy NTHD4N02FT1

Vo

PWMControl

Vin

NTHD4N02F

Charging Circuit using P-Channel

NCP1800

Rcomp

Ccomp Cout

NTHD4P02F

ISNSVSNS

ISEL

Vcc

CFLGCOMP/DIS

OUT

Gnd

Vin

Host or LedHost Processor

CinRisel60K

Rsns

FETKy

Buck using P-Channel

NTHD4P02F

77 www.onsemi.com

MOSFET High Side Power Management - Load Switch

Application:Combines level shift with power switch Uses small N-Ch to drive large P-Ch Reduces board space Targeting trench and smaller packages

Trench products will combine small N-Ch with Large P-Ch

Products:NTHC5513, ChipFET, Complementary, 20V N&PNTJD4101C, SC-88, Complementary, 20V N & 8V PNTJD4105C, SC-88, Load Switch, 20V N & 8V PFor discrete see next page

78 www.onsemi.com

MOSFET High Side Load Switch高端负载开关

Switch is used in Positive side of Power Supply开关用在电源的正极

The lower the RDS(on) the higher the system efficiencyRDS(on) 越低，系统效率越高

Package vary depending on current applied封装随着应用的电流改变

Solution:解决方案 ON Semiconductors P-Channel trench provides lowest RDS(ON) in Industry

安森美半导体的 P- 沟道器件提供业内最低的 RDS(ON) Offering a variety of packages options depending on the current required

根据要求的电流提供各种封装选择

Device 器件 Package 封装 Key Parameter 主要参数Samples 样品Release 发布NTHS2101PT1 ChipFET 8V, 25 [email protected] Now 现在 Now 现在NTHS4101PT1 ChipFET 20V, 34 [email protected] Now 现在 Now 现在NTGS4111PT1 TSOP-6 20V, 40 [email protected] Oct 十月 Q1 04 2004 年 1 季度NTR2101PT1 SOT-23 8V, 50 [email protected] Sept 九月 Q1 -04 2004 年 1 季度NTR4101PT1 SOT-23 20V, 55 [email protected] Dec 十二月 Q1-04 2004 年 1 季度NTVS4101PT1 FlipChip 20V, 65 [email protected] Dec 十二月 Q1-04 2004 年 1 季度NTJS3151PT1 SC-88 12V, 75 [email protected] Dec 十二月 Q1-04 2004 年 1 季度NTJS4151PT1 SC-88 20V, 110 [email protected] Dec 十二月 Q1-04 2004 年 1 季度NTS2101PT1 SC-70 8V, 230 [email protected] Dec 十二月 Q1-04 2004 年 1 季度NTS4101PT1 SC-70 20V, 400 [email protected] Dec 十二月 Q1-04 2004 年 1 季度NTZS3153PT1 SOT-563 20V, 600 [email protected] Jan 一月 Q1-04 2004 年 1 季度

Inputs from:

•Battery

•Switching Regulator

•LDO

•Etc.

(-)

(+)Display

Logic(+)

ASIC(+)

P.A.(+)

PMU

79 www.onsemi.com

MOSFET N-Channel Level Shifter N- 沟道电平转换器

Application:应用： Need small N-Ch as level shifter to drive

large P-Ch需要小型 N- 沟道作为电平移动器来驱动大型P- 沟道

N-Ch has low current requirementN- 沟道要求小电流

Targeting Smaller packages目标在于更小型封装

Source源极

Drain漏极

P-ChP- 沟道

N-ChN- 沟道Gate

栅极Gate Drive

fromController

or uProcessor

来自控制器或微处理器的栅极驱

动

(+)

(+) Input Volts

(+) 输入电压 L

oad

负载

(+)

Device器件

Package封装

Key Parameter主要参数

Samples样品 RTM

NTA4001N SC-7520V, 2.5Ω@2.5V, ESD Gate20V, 2.5Ω@2.5V, ESD 栅极

Now现在

Now现在

NTS4001N SC-7030V, 1.5Ω@2.5V, ESD Gate30V, 1.5Ω@2.5V, ESD 栅极

Now现在

Now现在

NTJD4001N SC-8830V, 1.5Ω@2.5V, ESD Gate30V, 1.5Ω@2.5V, ESD 栅极

Now现在

Now现在

80 www.onsemi.com

MOSFET Power Management (Load Switch)电源管理（负载切换）

Application:应用：Combines level shift with power switch 结合了电平移位和功率切换 Uses small N-Ch to drive large P-Ch 使用小 N- 沟道来驱动大的 P- 沟道 Reduces board space 减小了板空间 Targeting trench and smaller packages 目标在于沟道和更小的封装

Device器件

Package封装

Key Parameter关键参数

Samples样品 RTM

NTHC5513 ChipFET 20V, 155 [email protected]现在

Now现在

NTJD4105C SC-88 8V, 340 [email protected]现在

Now现在

NTJD1155L SC-88 8V, 150 [email protected]三月

Apr四月

负载电源管理

电池

负载开关

负载开关

负载开关

负载开关

功率放大器

显示器

逻辑器件

81 www.onsemi.com

Camera/LCD controller

Digitalprocessing

Power management

RFTransceiver

RF poweramplifier

Cameramodule

MelodyGenerator ??

Power MOSON semiconductor

NTHS5445T1/NTHS2101P

MOFET Example

82 www.onsemi.com

Audio Amplifiers

ON Advantage Device can be driven directly off the battery where the competition requires an

additional part. Cancellation circuitry for pop and click noise No output capacitors on the stereo headset amplifier is an advanced feature to reduce

part count.

A = active, S = samplingRTM = release to market

Device Description StatusDemoBoard

NCP2890DMR2 1W mono audio amplifier in a micro 8 A YNCP2890AFCT2 1W mono audio amplifier in a 9-pin Bump A YNCP2809ADMR2 NCP2809BDMR2

135 mW stereo headset audio amplifier (no output capacitors required)

AY

NCP48941W mono audio amplifier with Fully

Differential Inputs, 9-bin uBump/Micro10S

(RTM May 04)

NCP48961W mono audio amplifier with Earpiece Driving Capability, 9-bin uBump/Micro10

S(RTM May 04)

NCP2820 Class D, 2W mono audio amplifier Developmemt

83 www.onsemi.com

Applications• Wireless phones• PDAs• Portable Electronic Devices• Electronic Toys

Description The NCP2890 is an audio power amplifier capable of delivering 1W of continuous average power to an 8 W load from a 5V-power supply, and 320 mW to a 4 W load from a 2.6V power supply. The NCP2890 provides high quality audio while requiring few external components and minimal power consumption. It features a low-power consumption shutdown mode, which is achieved by driving the shutdown pin with logic low. The NCP2890 contains circuitry to prevent from “pop and click” noise that would otherwise occur during turn-on and turn-off transitions. For maximum flexibility, the NCP2890 provides an externally controlled gain (with resistors), as well as an externally controlled turn-on and turn-off times (with the bypass capacitor).

More Information Online: www.onsemi.com/ncp2890

Ordering Information • NCP2890DMR2 in Micro8, 4000 per reel• NCP2890FCT1 in Microbump9, 3000 per reel

Features• 1.2 W to an 8 W load from a 5V power supply• 520 mW to an 8 W load from a 3.3V power supply• 700 mW to a 4 W load from a 3.3V power supply• 2.5V – 5.5V operation• Ultra low current shutdown mode• External gain configuration capability• External turn-on and turn-off time configuration capability• Thermal overload protection circuitry• Extremely high performances : PSRR and THD+N• « Pop and click » noise protection circuit• Ultra small Microbump9, Micro8 packages

Benefits• Handfree operations

• Earpiece operations• Operates directly from 1 cell Li+ or 3 cell NiMH batteries.• Extends battery life• Flexibility

• No LDO needed, High quality of sound• User friendly• Saves PCB surface

Audio Amplifiers NCP2890 1 watt Audio Amplifier

84 www.onsemi.com

音频输入

旁路

关断

关断控制

Audio AmplifiersNCP2890 Typical Applicaton

85 www.onsemi.com

Audio AmplifiersNCP2890 Output Power vs Supply Voltage

400

600

800

1000

1200

1400

1600

3.0 3.5 4.0 4.5 5.0

Power Supply (V)

Ou

tpu

t P

ow

er (

mW

)

THD+N=1%

THD+N=10%

NCP2890 / Output Power vs Supply Voltage. F=1kHz, RL=8W

86 www.onsemi.com

Audio AmplifiersNCP2890 : Parametric Analysis

NCP2890

LM4890

0,01

0,10

1,00

10,00

0 100 200 300 400 500

Pout (mW)

THD

+N (%

)

THD+N vs. Pout Cbypass=1µF

Vp=2.6V, RL=4W, Av=2, F=1KHz

-80

-75

-70

-65

-60

-55

-50

-45

-40

-35

-30

10 100 1 000 10 000

Frequency (Hz)

PS

RR

(d

B)

PSRR vs. VpVp=2.6V, RL=8W, Av=2, Rin=10W, VRipple=200mVpk-pk

Cbypass=1µF

LM4890

NCP2890

THD+N vs. Pout Cbypass=1µF

Vp=5V, RL=8W, Av=2, F=1KHz

0,01

0,10

1,00

10,00

0 200 400 600 800 1000 1200 1400

Pout (mW)

THD+

N (%

)

NCP2890

LM4890

PSRR vs. Vp Cbypass=1µF

Vp=5V, RL=8W, Av=2, Rin=10W, VRipple=200mVpk-pk

-70

-65

-60

-55

-50

-45

-40

-35

-30

10 100 1 000 10 000Frequency (Hz)

PS

RR

(d

B) LM4890

NCP2890

87 www.onsemi.com

Audio AmplifiersNCP2890 : Parametric Analysis

Parameter Conditions NCP2890 LM4890 TS4890 TPA6203A1 NCP4894 Unit

Input SE SE SE Differential DifferentialVp=5V, No Load 1.7 4 6 1.7 2.1 mA (typ)Vp=5V, 8 Ohms 2.1 5 no data no data 2.2Vp=2.6V, No Load 1.5 2.6 5 1.7 1.9

Shutdown current 1.0 2 1 0.9 20nA µA(max)Output Offset

Voltage (Lower isbetter for battery life)

Vp=5V 20 50 20 9 1 mV(max)

THD+N (distortion) Vp=2.6V, Av=2,RL=4ohms,F=1khz,Pout=300mW

0.04% 4% 0.2% 0.08% 0.007%

PSRR (powersupply ripple

rejection)

Vp=2.6V, Av=2,RL=8ohms, F=1kHz,Vripple=200mVp-p

-75dB -42dB -77dB -90dB (Av=1), -75dB (Av=5)

-85

Micro8/Msop8package size

3.0 x 4.9 mm(DMR2suffix)

3.0 x 4.9mm (MMX

suffix)

3.0 x 4.9mm (ISTsuffix)

not available

Microbump/BGApackage size

1.45 x 1.45mm (FCT1

suffix)

1.51 x 1.51mm (IBLX

suffix)

notavailable

2.0 x 2.0 mm(GQV suffix)

1.45 x 1.45mm (FCsuffix)

Micro10 packagesize

3mm×5mm（DM suffix)

Quiescent PowerSupply current

88 www.onsemi.com

Applications

Portable stereo MP3 Player Cellular Phone Electronic Toys Personal Computer

Description

The NCP2809 is a cost-effective stereo audio power amplifier capable of delivering 135mWper channel of continuous average power per channel into 16 W loads.

The NCP2809 audio power amplifier is specifically designed to provide high quality outputpower from low supply voltage, requiring very few external components. Since NCP2809does not require bootstrap capacitors or snubber networks, it is optimally suited for lowpower portable systems. NCP2809A has an internal gain of 0dB while specific external gaincan externally be set with NCP2809B .

If the application allows it, the virtual ground provided by the device can be connected tothe middle point of the headset. In such case, the two external heavy coupling capacitors areuseless. Otherwise, you can also use both outputs in single ended mode with externalcoupling capacitors.

Due to its excellent PSRR, it can be directly connected to the battery, saving the use of aLDO.


Ordering Information NCP2809ADMR2, Micro10, 4000 per reel NCP2809BDMR2, Micro10, 4000 per reel

Already RTM

Audio AmplifiersNCP2809: NOCAP™ 135mW Stereo Headphone

Power Amplifier

89 www.onsemi.com

Audio AmplifiersNCP2809 Parametric Analysis

0.001

0.01

0.1

1

10

0 20 40 60 80 100 120 140 160

Output Power (mW)

TH

D+

N (

%)

Vp=5V

Vp=3.3VVp=2.4V

THD+N vs.. Pout @ RL=16W, f=1kHz

0.001

0.01

0.1

1

10

10 100 1 000 10 000 100 000

Frequency (Hz)

TH

D+

N (

%)

Vp=2.4V, Pout=20mW

Vp=5V, Pout=75mW

Vp=3V, Pout=30mW

THD+N vs.. Frequency @ RL=16W

-70

-60

10 100 1 000 10 000 100 000

Frequency (Hz)

Cro

ssta

lk (

dB

)

Vp=2.4V, Pout=20mW

Vp=5V, Pout=75mW

Vp=3V, Pout=30mW

Crosstalk vs. Frequency @ RL=16W

-110

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

10 100 1 000 10 000 100 000Frequency (Hz)

PS

RR

(d

B)

Vp=2.4V

Vp=5V

Vp=3V

PSRR @ Inputs grounded, Vripple=200mV pk-pk, RL=16W

90 www.onsemi.com

Audio Amplifiers NCP2809 Application

:

Turn On sequence : Math2=V(load)=Ch3 -Ch1 Turn On sequence Zoom : Math2=V(load)=Ch3-Ch1

Turn Off sequence : Math2=V(load)=Ch3-Ch1 Turn Off sequence Zoom : Math2=V(load)=Ch3-Ch1

Ch1 = OUT_RCh2 = VMCCh3 = OUT_LMath1 = Vload_R = Ch1 - Ch2Math2 = Vload_L = Ch3 - Ch2

91 www.onsemi.com

Audio AmplifiersNCP2809A (Int Gain) / B (Ext Gain)

• 2.2V~5.5V Supply• 135mW @ 16Ω 5V• Ultra Low Iq: 0.6µA max• Virtual Ground: Brilliant accuracy

excellent Crosstalk, Iq and offset• “Pop & Click” noise immunity• Excellent PSRR (90dB)• Directly supplied from Vbat• THD+N of 0.007% (typ)• Only 4 External Components for NCP2809A• 8 External Components only for NCP2809B• µ10 Package (15mm²)

92 www.onsemi.com

Audio Amplifiers NCP2809 Benchmark

ON National MaximNCP2809 LM4911 MAX4410

Vcc 2.5V ~ 5.5V 2.0V ~ 5.5V 1.8V ~ 3.6VOutput Power16 Ohms/3V

45mWTHDN=1%

40mWTHDN=1%

80mWTHDN=1%

Iq (Shutdown) 0.6µA 1µA 6µAExternal SD Yes Yes YesPop & Click Yes (brilliant) Yes (partially) YesPSRR 90dB 55dB 90dBVbat -> Vcc Yes No NoTHD+N 0.007% (typ) 0.3% (max) 0.005% (typ)External Components

4 (A version)8 (B version) 7

5 (MAX4411)9 (MAX4410)

Package Type µ10 µ8 µBump/TSSOPPackage Size 15mm² 15mm² 4mm²/30mm²

93 www.onsemi.com

Applications Cell Phone Portable stereo MP3 Player Electronic Toys Personal Computers

Description

The NCP4894 is a fully differential audio power amplifierdesigned for portable communication device applications. Thisfeature and the excellent audio characteristics of the NCP4894 are aguarantee of a high quality sound, for example, in mobile phonesapplications. With less than 0.01% distortion (THD + N), theNCP4894 is capable of delivering 1.0 W of continuous averagepower to an 8.0 load from a 5.0 V power and still 250 mW from2.6 V.

Ordering Information NCP4894 in µBump-9 and in µ-10

Features Fully Differential 1.2 W to an 8 W load from a 5V power supply 2.5V – 5.5V operation Ultra low current shutdown mode External gain configuration capability External turn-on and turn-off time configuration capability Thermal overload protection circuitry Extremely high performances : PSRR and THD+N « Pop and click » noise protection circuit Ultra small Bumped die

Benefits

Drive capability for Polyphonic ringer or Speakerphone Operates directly from 1 cell Li+ or 3 cell NiMH batteries. Extends battery life Flexibility

No LDO needed, High quality of sound User friendly Saves PCB surface

Audio AmplifiersNCP4894 1 Watt Fully Differential Audio Amplifier

94 www.onsemi.com

Audio AmplifiersNCP4894 Typical Application Schematic

VMC 桥

SD 选择

SD 模式

旁路

关断控制

旁路

旁路

差动

音

频输

入

95 www.onsemi.com

Audio AmplifiersNCP4894 Stereo Application Schematic

VMC 桥

SD 选择

SD 模式

旁路

关断控制

旁路

旁路

差动

音频

输入

96 www.onsemi.com

Features 2.2V to 5.5V operation 1.1W to an 8Ω load from a 5V supply, THD+N<0.008% Ultra Low Shutdown Current (20nA typical) “Pop & Click” noise protection circuit Superior THD+N: 0.007% at 1W Superior PSRR (70dB) Very Few External Components

Benefits Supports wide range of battery power applications High Output Power Extends Battery Life Excellent Sound Quality Excellent Sound Quality Direct Connection to Battery, Saving an LDO Saves Manufacturing Cost

Packaging 9 pin Flip-Chip CSP (1.5x1.5mm)

Product Ordering Information NCP4896FCT1G (9 pin Flip-Chip CSP)

3000 Units Tape and Reel, G suffix stands for Pb-free

Market & Applications• Cellular Phone, PDA, DSC• DVD Player, Audio/Video Players• Personal Computer, Sound Card• Electronic Toys• Portable mono loudspeaker & earpiece

Audio AmplifiersNCP4896 1W Audio Power Amplifier with Earpiece

Driving Capability

Through a dedicated SE/BTL pin, the user can drive either a single-ended 32Ω load (earpiece) up to 90mW, or a bridge-tied 8Ω load (loudspeaker) up to 1W. It saves the need of a second audio amplifier or an analog switch for the earpiece . The NCP4896 provides high quality audio while requiring few external components and minimal power consumption.

97 www.onsemi.com

Audio AmplifiersNCP4896 1W Audio Power Amplifier with Earpiece

Driving Capability

• 2.2V~5.5V Supply• Through a dedicated SE/BTL pin, the user

can drive either a single-ended 32Ω load (earpiece) up to 90mW, or a bridge-tied 8Ω load (loudspeaker) up to 1W.

→ Saves the need of a second audio amplifier or an analog switch for the earpiece .

• High Output Power:→ 1.1W with 0.008% THD+N @ 8Ω, 5V

• Ultra Low shutdown current: → 20nA typical

• Very Low quiescent current:→ 2mA typical at BTL (bridge-tied load)→ 1mA typical at SE (single-ended)

• “Pop & Click” noise protection• Superior THD+N of 0.007% @ 1W, 8Ω, 5V• Very Low Noise floor: 15µVrms (SE) &

35µVrms (BTL)• Excellent PSRR (-70dB):

→ Directly supplied from Vbat. Save a LDO

• 9 pins Flip-Chip CSP ( 1.5x1.5mm)

98 www.onsemi.com

White LED Boost Drivers

Device Package Special Attributes Series Parallel StatusEval.

BoardNCP1403 SOT23-5 Low input voltage 1.2V~5.5V. Suits 2-cell Alkaline/NiMH

applications.4 8 A Yes

NCP5007 SOT23-5 High efficiency up to 86%. Suitable for LiIon applications and 3 cell NiMH as well.

5 15 S (RTM Jun 04)

Yes

NCP5008/9 Micro10 Serial data input pin allows LED brightness control by 牌 .Does not need a sense resistor

3-4 10 A Yes

# of LEDs in

Device Package Special Attributes Series Parallel StatusEval.

BoardNCP1403 SOT23-5 Low input voltage 1.2V~5.5V. Suits 2-cell Alkaline/NiMH

applications.4 8 A Yes

NCP5007 SOT23-5 High efficiency up to 86%. Suitable for LiIon applications and 3 cell NiMH as well.

5 15 S (RTM Jun 04)

Yes

NCP5008/9 Micro10 Serial data input pin allows LED brightness control by 牌 .Does not need a sense resistor

3-4 10 A Yes

# of LEDs in

Typical Applications

Small Color LCD Screens

Cell phones, Digital Cameras, PDAs, and GPS

Portable electronics and instrumentation

ON Advantage Low end applications: The NCP1403 with low input voltage is suitable for 2-cell Alkaline/NiMH applications. Feature Rich applications: The NCP5009 automatically adjust screen brightness based on ambient light and

provides digital dimming via serial MPU interface Mainstream: NCP5007 with high efficiency > 80% and ability to drive up to 5 LEDs in Series

A = activeRTM = release to market

99 www.onsemi.com

White LED driver What about a Charge Pump?

Fig. 1 Efficiency as a function of Battery voltage

2.7v 3.0v 3.3v 3.6v 3.9v 4.2v

90%

60%

Efficiency

Dual mode fractional

charge-pump

Inductive Boost

(NCP5007)

Battery usable range VBAT

100 www.onsemi.com

Applications Backlight for small color LCD screens High Efficiency Step up converters Portable devices

Description The NCP5007 is a very high efficiency boost converter operating in current loop control mode to drive Light Emitting Diode. The current mode regulation allows a uniform brightness of the LED’s.

Ordering Information NCP5007SNT1G SOT23-5 T&R Units 3000

Features Inductor based converter

Built-in over-voltage protection 2.7 to 5.5V Input voltage range Vout up to 22V 1µA Quiescent Supply Current Includes dimming function by PWM on

either enable pin or feedback pin Only 5 external components High frequency switching mode Zero cross switching at no current

Benefits Brings higher efficiency up to 86%

(10 to 20% higher than charge-pump) Saves a zener diode at output pin Operates directly from 1 cell Li+ or 3 cell NiMH batteries Allowing up to 5 LEDs in series or 15 as a total. Extends battery life For smooth brightness changes

Lowest part count and easier design Allows small inductor (22uH) Low noise DC/DC converter, Reduces EMI

White LED driver NCP5007Compact White LED Boost Driver

More Information Online: http://www.onsemi.com/ncp5007

101 www.onsemi.com


Features 2.7 to 5.5V Supply voltage Up to 85% efficiency Vout up to 22V (5 LEDs in series) Over-voltage protection Thermal protection 3µA Quiescent Supply Current Shutdown control Only 5 external components High frequency switching mode Low noise operation Vcc independent from Vbat SOT23-5 package Dimming function by PWM on EN or FB pins

White LED driver NCP5007Compact White LED Boost Driver

Inductor supply can be higher than Vcc

Low 0.2V reference voltage minimizes the efficiency loss in R1

Built-in Overvoltage Protection, saves a

Zener

102 www.onsemi.com

Features:• Vout up to 15V@20mA with Vin>2.7V, or 10V@20mA with Vin>1.8V • Uniform brightness through series configuration

1F

RN = 0.8V/20mA = 40 ohm,

Pdiss = R.(20mA)² = 16mW

NCP1403(SOT23-5)

White LED driver NCP1403White LED Boost Driver (suitable for low Vin)

103 www.onsemi.com

Applications Backlight for small color LCD screens High Efficiency Step up converters Portable devices


More Information Online: TBD

Ordering Information TBD SOT23-5 T&R Units 3000

Features Inductor based converter Built-in over-voltage protection 2.7 to 5.5V Input voltage range Vout up to 22V 1µA Quiescent Supply Current Includes dimming function by PWM on

either enable pin or feedback pin Only 5 external components High frequency switching mode Zero cross switching at no current

Benefits Brings higher efficiency (up to 83%) than charge-pump Saves a zener diode at output pin Operates directly from 1 cell Li+ or 3 cell NiMH batteries Allowing up to 5 LEDs in series or 15 as a total. Extends battery life For smooth brightness changes

Lowest part count and easier design Allows small inductor (22uH) Low noise DC/DC converter, Reduces EMI

White LED driver NCP5007*Compact White LED Boost Driver

*Coming soon

104 www.onsemi.com

White LED driver NCP5007*Application Circuit

*Coming soon

Built-in over-voltageProtection Saves aZener diode at Vout pin.

105 www.onsemi.com

White LED driver NCP5007 Additional information

*Coming soon

106 www.onsemi.com

White LED driver Competitor Parametric Analysis

Competitor Maxim MPS National TI Toko

Part number MAX1848 LT1932 LT1937 MP1523 LM2703 TPS61040 TK11850 NCP1403 NCP5007

LED brightness control

Analog or DAC Control

PWM PWM PWM PWM PWM PWM PWM PWM

Automatic brightness control

NO NO NO NO NO NO NO NO NO

Package SOT23-8 SOT23-6 SOT23-5 SOT23-5 SOT23-5 SOT23-5 SOT23L-8 SOT23-5 SOT23-5

Package Size 3x3 mm 3x3 mm 3x3 mm 3x3 mm 3x3 mm 3x3 mm 3.3x3.5 mm 3x3 mm 3x3 mm

Regulation Mode CURRENT CURRENT CURRENT CURRENT CURRENT CURRENT CURRENT CURRENT CURRENT

Sense Resistor EXTERNAL INTERNAL EXTERNAL EXTERNAL EXTERNAL EXTERNAL EXTERNAL EXTERNAL EXTERNAL

Total Passive Part Count

6 6 6 6 6 6 7 6 5

Input Voltage 2.6 to 5.5V 1 to 10V 1 to 10V 2.7 to 25V 2.2 to 7V 1.8 to 6V 2.3 to 10V 1.2 to 5.5V 2.7 to 5.5V

Output voltage up to 13V up to 36V up to 36V up to 25V up to 21V up to 28V up to 20V up to 15V up to 22V

Over-voltage protection

YES NO NO NO NO NO NO NO YES

Max number of LEDs in series

3 8 6 6 4 6 4 4 5

Max number of LEDs in parallel

6 ? ? ? ? ? ? 10 15

Feedback voltage NA (1) NA (1) 0.1V 0.4V 1.2V 1.2V 0.5V 0.8V 0.2V

Efficiency (2) @ Vin=3.6V, 3LEDs (series), 15mA

83% 78% 82% 82% 75% 75% 73% 72% 83%

Switching frequency

1.2MHz 1.2MHz 1.2MHz 500KHz 1MHz 1MHz 800kHz 300kHz 600kHz

Inductor value 33uH 6.8uH 22uH 10uH 10uH 10uH 22uH 22uH 22uH

Shutdown current 0.3µA 0.1µA 0.1µA 1µA 0.1uA 0.1uA 0.1uA 0.3µA 1µA

Price High High High Medium Medium Medium Medium Medium Medium

Selling points

Vin below 2V => suits 2-cell Alkaline/NiMH applications

High eff iciency

83%, Over-voltage

protection

Linear Tech ON

Note: (1) 'NA' = not applicable. (2) Eff iciency = LED output pow er / Input pow er.

107 www.onsemi.com

• 25V low side switch, 1.2V Feedback Voltage• Max output current: 50mA @ Vout=15V, 25mA @ Vout=25V• 85% Efficiency at Vout = 25 V, Iout = 25 mA, Vin = 5.0V • 85% Efficiency at Vout = 15 V, Iout = 50 mA, Vin = 5.0V• Low Operating Current of 15 uA (Not Switching)• Ceramic Capacitors• PFM switching up to 1MHz

25 VC2

4.7FC3C1

10F

R1

Enable

R2

NC

P

1

2

3

5

4

CE

FB

VDD GND

LX

VIN VOUT

L 4.7 H D MBRM130LT1

1.8 V to 5.5 V

5 pF to 150 pF

C4

150pF

Applications• Cell Phone OLED Driver• PDAs• Digital Cameras• Handheld Games• Portable Audio

Sample now, MP June 04

White LED driver NCP1406 25V PFM Step-Up DC-DC Converter for OLED Bias

108 www.onsemi.com

New Flash Concept – Ultra Bright White LED

Casio SonyEricsson

White LED

Sanyo

109 www.onsemi.com

Flash LED Suppliers

• Luxpia

– LED part number: LWH1033

• Continuous 20mA max

• Pulse 100mA max

– Web site: www.luxpialed.com

• Lumileds

– LED part number: Luxeon DS25

• Continuous 350mA max

• Pulse 1000mA max

– Application note: Lumiled DR01

– Web site: www.lumiled.com

110 www.onsemi.com

High Current LED Driverfor Flash/Torch application

To drive ultra bright white LED, a current of 100mA to 1000mA is required, thus high current boost DC-DC converter is required.

Device Topology FrequencyInput

VoltageOutput

Voltage Max CurrentTyp

Efficiency Package Features StatusNCP1406 PFM 1MHz 1.2-5.0V up to 25V 100mA pulse

@12V; 50mA

continuous @15V; 25mA

continuous @25V

85% SOT23-6 High voltage output for serial LED connection

S (MP Jun 04)

NCP1421 PFM 1.2MHz 1.0-5.0V 1.5-5.0V 600mA 94% Micro8 Sync-rect, True-cutoff, Low-battery-detect

MP

NCP1422 PFM 1.2MHz 1.0-5.0V 1.5-5.0V 1A pulse; 800mA

continuous

94% DFN10 Sync-rect, True-cutoff, Low-battery-detect

MP


VoltageOutput


Efficiency Package Features StatusNCP1406 PFM 1MHz 1.2-5.0V up to 25V 100mA pulse

@12V; 50mA

continuous @15V; 25mA

continuous @25V

85% SOT23-6 High voltage output for serial LED connection

S (MP Jun 04)


MP

NCP1422 PFM 1.2MHz 1.0-5.0V 1.5-5.0V 1A pulse; 800mA

continuous

94% DFN10 Sync-rect, True-cutoff, Low-battery-detect

MP

S = sample, MP = mass production

111 www.onsemi.com

NCP1406 Flash LED Driver (up to 100mA pulse with 3 LED in serial connection)

White LED X 3100mA pulse

LuxpiaLHW1033

GND

FB

L1 4.7 H

R1

VIN

C1 22 F 6.3 V

CE

C2

10 F 16 V

MBR05 2 0LT1

3 .0V to 5.5V

ILED

ON

OFF

D1

JP1

GND

V OUT

GND

CE

VDD

LX

2

3

5

6

1

NCP1406

U1

TP1

TP2

TP3

TP4

12 W

Control signal

R1V19.1

I LED(DC)

112 www.onsemi.com

NCP1421 LED Flash/Torch Driver (up to 5V, 700mA pulsed)

• Constant Current Control. This circuit regulates the current flowing through the White LED. It reduces driving voltage headroom requirements and lot-to-lot brightness variation due to LED forward voltage variation.

• The effective feedback voltage (and hence the power loss) is reduced by using the voltage divider of R1, R2 and R3.

• NCP1421 is 600 mA Sync-Rect PFM Step-Up DC-DC Converter with True-Cutoff and Ring-Killer

• NCP1421True-Cutoff Function Reduces Device Shutdown Current to typically 50 nA

• Micro8 package (3 x 4.9mm)

LumiledsLuxeon I

or IIILi-Ion

Cell

113 www.onsemi.com

NCP1422 LED Flash/Torch Driver (up to 5V, 1A pulse, 800mA continuous)

• Constant Current Control. This circuit regulates the current flowing through the White LED. It reduces driving voltage headroom requirements and lot-to-lot brightness variation due to LED forward voltage variation.

• The effective feedback voltage (and hence the power loss) is reduced by using the voltage divider of R1, R2 and R3.

• NCP1422 is 800 mA Sync-Rect PFM Step-Up DC-DC Converter with True-Cutoff and Ring-Killer

• NCP1422 True-Cutoff Function Reduces Device Shutdown Current to typically 50 nA

• DFN10 package (3 x 3mm)

NCP1422

LumiledsLuxeonDS25

up to 1A pulse, 800mA continuous

Li-Ion

Cell

114 www.onsemi.com

DC-DC Buck Converters

Key Features Unique configurations to efficiently handle varying current load of microprocessors and DSPs to provide

lowest quiescent current under light loads and high efficiency at normal load

External sync pin configurations to minimize spurious frequencies and harmonics

Space efficiency micro-packaging including bumped die for some products


voltage Output voltageMax

Current Typ Eff Package Features Status

NCP1500 PWM/Linear External Sync, 270~630kHz

2.7-5.4V1.0,1.3,1.5,

1.8V300mA 91% Micro8

Can program to work in Linear LDO Regulator mode

A

NCP1501PWM Sync Rect /Linear

External Sync, 450-1000kHz

2.7-5.2V 1.05,1.35,1.57,1.8 300 mA 93% Micro8User can program the IC to

work in Linear LDO Regulator mode

A

NCP1510NCP1511NCP1512

PWM Sync Rect/Pulsed

External Sync,450-1500kHz,Internal 1MHz

2.7-5.2V

1.05,1.35,1.57,1.8 1.0,1.3,1.5,1.89 2.5,2.85,3.0,3.3

300mA 94% uBump9Ultra Low 14 uA Iq at light

loads

S (RTMstarting

from May 04)

NCP1520PWM/PFM

External Sync,10-22MHz (div20)

Internal 1MHz2.7-5.2V Ext Set - 0.4-3.4V 800mA 94% uBump12

Externally set Compensation, Resistor Divider sets Vout,

9mA LDO included

S (RTMSep 04)

NCP1530 PWM/PFM 600kHz 2.0-5.5V 2.5-3.3V 600mA 92% Micro8 External Sync up to 1.2 MHz A

NCP1550PWM/PFM Controller

0-600kHz 2.5-6.0V 1.8-3.3V2000mA

(ext switch)

90% SOT23-5 Enable pin A


voltage Output voltageMax

Current Typ Eff Package Features Status

NCP1500 PWM/Linear External Sync, 270~630kHz

2.7-5.4V1.0,1.3,1.5,

1.8V300mA 91% Micro8

Can program to work in Linear LDO Regulator mode

A

NCP1501PWM Sync Rect /Linear

External Sync, 450-1000kHz

2.7-5.2V 1.05,1.35,1.57,1.8 300 mA 93% Micro8User can program the IC to

work in Linear LDO Regulator mode

A

NCP1510NCP1511NCP1512

PWM Sync Rect/Pulsed

External Sync,450-1500kHz,Internal 1MHz

2.7-5.2V

1.05,1.35,1.57,1.8 1.0,1.3,1.5,1.89 2.5,2.85,3.0,3.3

300mA 94% uBump9Ultra Low 14 uA Iq at light

loads

S (RTMstarting

from May 04)

NCP1520PWM/PFM

External Sync,10-22MHz (div20)

Internal 1MHz2.7-5.2V Ext Set - 0.4-3.4V 800mA 94% uBump12

Externally set Compensation, Resistor Divider sets Vout,

9mA LDO included

S (RTMSep 04)

NCP1530 PWM/PFM 600kHz 2.0-5.5V 2.5-3.3V 600mA 92% Micro8 External Sync up to 1.2 MHz A

NCP1550PWM/PFM Controller

0-600kHz 2.5-6.0V 1.8-3.3V2000mA

(ext switch)


A = active, S = samplingRTM = release to marketTypical Applications

Cell Phone, DSC, PDA, WLAN Card, Portable Electronics Battery operated devices - especially those driven by 1-cell Lithium or 3-cell alkaline/NiMH battery

BasebandPower supply



PAPower supply

115 www.onsemi.com

Applications Cell Phone Baseband Power Supply Wireless LAN Cards Supplies for DSP Cores Portable Applications

Description NCP1501 is a dual mode regulator that operates either as a PWM Buck Converter or as a Low Drop Out Linear Regulator. If a synchronization signal is present, the NCP1501 operates as a current mode PWM converter with synchronous rectification. The synchronization signal allows the user to control the location of the spurious frequency noise generated by a PWM converter. Linear mode is active when a synchronization signal is not present. The NCP1501 configuration allows an efficient high power operation and low noise during system sleep modes.

Ordering Information NCP1501DMR2: Micro8TM 4000 units T&R

Features Synchronous Rectification in PWM Mode (>300 mA Iout) and 800

mA peak inductor current Linear Mode Operation at Low Loads up to 50 mA

Integrated MOSFETs, Feedback Circuit and Slope Compensation Current Mode PWM with Cycle by Cycle Current Limit Designed for use with ceramic capacitors Operating Frequency Range of 500 to 1000 kHz Thermal Limit Protection Shutdown Current Consumption of 0.2 A Digitally programmable output voltages 1.05, 1.35, 1.57, and 1.8V

Benefits High Efficiency up to 92.5% for Medium to

High Loads Low Noise and Low Power Consumption for

Light microprocessor loads and standby Reduces Part Count Fast Transient Response Lower component cost,small size Reduces Inductor Size Safety Protection Extends Battery Life User Friendly and Allows Dynamic Voltage

Management


NCP1501 Buck Converter with Synchronous Rectification and LDO

Mode

116 www.onsemi.com

NCP1501Buck Converter with Synchronous Rectification and LDO mode

10%

20%

30%

40%

50%

0 200 400 600 800 1000

Iout (uA)

• Combines the efficiency of PWM for Large Loads and LDO Low Iq for Standby

• LDO Mode Eliminates PFM Mode Spikes• Vout 1.05, 1.35, 1.57, 1.8 V, Iout – 300 mA PWM mode, 50 mA LDO

mode• Fully integrated compensation for minimum parts count

Cout10u

DC/DCCntrl

L1

10uH

LDO Cntrl

Q3Cin10u

Q1

Q2

Vbat

Sync

Vout

FB

I lim

LX

SHD

EACB0CB1

Forced PFM

LDO

3.6 Vin

1.8 Vout

117 www.onsemi.com

NCP1501: Cross Reference

Company ON SemiconductorNational

SemiconductorLinear Technology MicroChip

Part Number NCP1501DMR2LM2612ABP LM2612BBP

LTC1878EMS8MCP1601T-I/MSMCP1601-I/MS

Compatibility

Frequency450 kHz to 1.0 MHz External Sync Only

600 kHz Oscillator / 500 to 1000 kHz



Modes PWM / LDO PWM / PFM PWM / PFM / Burst PWM / PFM

Output Current

300 mA300 mA (B suffix) or

400 mA (A suffix)600 mA 500 mA

Efficiency @ 1.8 Vout

92% 88% 90% 92%

Iq @ Iout = 0 32 uA 150 uA 10 uA 119 uA

Efficiency @ 100 uA

38% 23% 73% 25%

Compensation Internal Internal External External

PackageMicro 8

(MSOP 8)10 Pin uBump MSOP 8 MSOP 8

No Pin For Pin Compatible Parts

118 www.onsemi.com

NCP1510/11/12Ultra Low Quiescent Current Buck Regulator

0%

10%

20%

30%

40%

50%

60%

70%

80%

90%

100%

0.01 0.1 1 10 100 1000

Iout (mA)

• Dual Mode PWM/Pulse Mode for Low Iq (14 uA) in Standby• Sync or Internal 1.0 MHz Oscillator• Vout 1.05, 1.35, 1.57, and 1.8V (NCP1510)• Vout 1.0, 1.3, 1.5, and 1.89V (NCP1511)• Vout 2.5, 2.85, 3.0 and 3.3V (NCP1512)• Iout – 300 mA PWM mode, 30 mA Pulsed Mode• uBump Packaging and 3x3mm QFN (Q4)

Control

Low IqPulsedCntrl

PWM /PFMCntrl

Vin

CinCout

VoutLQ1

Q2

SDNCB0Sync

GNDP GNDA

LX FBVCC

CB1

3.6 Vin1.8 Vout

Pulse PWM

MP Starting Q2 2004

119 www.onsemi.com

System Layout Area系统布局面积

Component元件 NCP1500 NCP1501 NCP1510

IC Micro8 + MBR0520 (SOD-123) Micro8 CSP

IC AreaIC 面积 3 x 5 + 1.8 x 3.8 3 x 5 1.5 x 1.5

Capacitors电容 2 0805 10 uF 2 0805 10 uF 2 0805 10 uF

Cap Area电容面积 2 x (2.0 x 1.2) 2 x (2.0 x 1.2) 2 x (2.0 x 1.2)

Frequency频率 600 kHz 1 MHz 1 MHz

Inductor电感

Sumida CDRH2D18/LD 15 uH

Sumida CDRH2D18/LD 10 uH

Sumida CDRH2D11 6.8 uH

Inductor Area电感面积 3.2 x 3.2 x 2.0 3.2 x 3.2 x 2.0 3.2 x 3.2 x 1.2

Total Area总面积 36.9 mm2 30 mm2 17.3 mm2

Board Layout (60% Compression)电路板面积（压缩 60%）

61.5 mm2 50 mm2 28.8 mm2

Assume 4.2 Vin max, Vo = 1.8V, 300 mA Iout maxAll Dimensions in mm假设最大 4.2 Vin, Vo = 1.8V, 最大 300 mA Iout所有尺寸的单位是 mm

120 www.onsemi.com

Layout Comparison布局比较

NCP1501Micro8 3x5mm

NCP1510uBump 1.5x1.5mm

121 www.onsemi.com

NCP1501: PWM vs LDO Efficiency ComparisonPWM与LDO效率比较

0%

10%

20%

30%

40%

50%

60%

70%

80%

90%

100%

0.01 0.1 1 10

Iout (mA)

1.57 V PWM

1.8 V PWM

1.57 V LDO

1.8 V LDO

NCP1510: PWM vs Pulse EfficiencyPWM与脉冲效率比较

0.00%

10.00%

20.00%

30.00%

40.00%

50.00%

60.00%

70.00%

80.00%

90.00%

100.00%

0.01 0.1 1 10 100 1000

Iout (mA)

1.57 V Pulse

1.8 V Pulse

1.57 V PWM

1.8 V PWM

Efficiency Comparison效率比较

3.6 Vin

3.6 Vin

122 www.onsemi.com

NCP1530 600mA PWM/PFM Step-down DC-DC Converter with External Sync pin

• Optimized for 2.5 to 3.3 Vout with Good Efficiency• Up to 6.0 Vin (max)• 600 mA out• 600 kHz Internal Oscillator / 600 kHz to 1.2 MHz Sync• Very Low Cost Solution• Programmable Soft Start• Ceramic Caps• MSOP8 (3x4.9mm)

RTM Already

Applications Smart Phone Baseband

Power Supply PDAs Digital Cameras Handheld Games Portable Audio

123 www.onsemi.com

Applications Smart Phone Baseband Power Supply PDAs Digital Cameras Handheld Games Portable Audio

Description The NCP1530 is a PWM/PFM step-down (buck) DC-DC converter up to 600mA load. It can operate in PWM mode or PFM mode in which the IC automatically switches to PFM mode at light loads for higher efficiency. The internal oscillator frequency is 600kHz and it can be synchronized to external clock between 600kHz and 1200kHz. It is available in space-saving Micro8TM package.

More Information Online: www.onsemi.com/ncp1530Ordering Information Micro8TM 4000 Units T&R will offer 2.5, 2.7, 3.0, 3.3V fixed output voltages

Features 92% Efficiency at Iout=500mA, Vout =3.3V, Vin=4.0V Low Operating Current of 48uA (no load) Low Shutdown Current of 0.1uA Automatic PWM/PFM mode for current saving Synchronizable to external clock up to 1200kHz Switching Frequency of 600kHz Micro8TM package Vin from 2V to 5.5V

Benefits High efficiency --> Extends Battery Life Extends Standby operation

Optimizes system efficiency Reduces EMI in the system Allows small size inductor --> Saves Board Space Saves Board Space Suitable for a wide range of voltage sources

NCP1530 600mA PWM/PFM Step-down DC-DC Converter with External Sync pin

124 www.onsemi.com

NCP1530: Competition Analysis

Part No. NCP1530 LTC1701 LTC1877/8 XC6377 TC120Manufacturer ON Linear Tech Linear Tech Torex MicrochipOutput Voltage Range 2.5V, 2.7V, 3.0V, 3.3V

Fixed by Laser Trim1.25V to 5V

External Adjustable 0.8V to VIN

External Adjustable

1.5V to 6VFixed 0.1V Step andExternal adjustable

version

3.0V, 3.3V, 5.0VFixed

Output Voltage Accuracy +/- 1.5% +/- 2.4% on top of external resistors

tolerance

+/-2% on top of external resistors tolerance

+/-2.5% +/-2.5%

Input Voltage Range 2.5V to 5.5V 2.5V to 5.5V 2.65V to 10V 1.8V to 10V 1.8V to 10VMax. Switching Frequency 600 kHz 1 MHz 550kHz 300kHz 300kHzExternal Syn. Capability Yes, upto 1.2MHz No Yes, 400kHz to 700kHz No No

Inductor Needed 5.6uH 4.7uH 10uH 22uH 22uFSupport Ceramic Capacitors Yes Yes ? No NoEfficiency at Light LoadVOUT = 3.3V, VIN = 5V, IOUT = 50mA

85% Typ. 88% Typ. 94% Typ. 88% Typ. ?

Efficiency at High LoadVOUT = 3.3V, VIN = 5V, IOUT = 500mA

90% Typ. 89% Typ. 87% Typ. 84% Typ. ?

Output Ripple VoltageVOUT = 3.3V, VIN = 5V, IOUT = 50mA

10mVp-p ? ? ? ?

Max. Output CurrentVOUT = 3.3V, VIN = 5V

600mA 600mA 600mA 500mA 600mA

Operating Current at Room Temp.VOUT = 3.3V, VIN = 5V

50uA Typ. 135uA 230uA 52uA Typ. 55uA Typ.

Shutdown Curent at Room Temp.VOUT = 3.3V, VIN = 5V

0.1uA Typ. < 1.0uA < 1.0uA 1.5uA Typ. 1.5uA Typ.

Maximum Duty Cycle 100% 100% 100% 100% 100%Internal Sync. Rect Operation No No Yes No NoPFET RDS(ON) at Room TempVOUT = 3.3V, VIN = 5V

0.3 Ohm Typ. 0.3 Ohm Typ. 0.65 Ohm Typ. 0.69 Ohm Typ. 0.64 Ohm Typ.

NFET RDS(ON) at Room Temp.VOUT = 3.3V, VIN = 5V

N.A. N.A. 0.75 Ohm Typ. N.A. N.A.

Control Scheme PWM/PFM PWM/Burst Mode PWM/Burst/Pulse Skip PWM/PFM PWM/PFMAdditional Features Enable Enable Enable Enable, UVLO,

external DriveShutdown, UVLO,

external DrivePackage Micro8 SOT23-5 MSOP-8 SOP8 SOP8

125 www.onsemi.com

Low NoiseAmplifier

RF MixerRF input900MhzModulated

DC-DC Buck ConverterApplication Example

FrequencySynthesizer

900Mhzpure wave

DigitalBase band

0-100KhzModulation Audio

Amplifier

Battery3.6V

Low Noise LDO2.8V@40mA

Low Noise LDO2.8V@80mA

High PSRR LDO2.8V@300mA

Main Power Supply

Low Iq LDO2.8V@150mA

DC/DCBuck Converter

1.5V, 300mAfor DSP,MCU

DC-DC has a much higher efficiency than LDO when the difference between Vout and Vin is large.

126 www.onsemi.com

DC-DC Boost Converters(Step-up Converters)

Typical Applications Cell Phone, DSC, PDA, GPS, Wireless Optical Mouse, Portable Audio, Handheld Game, LCD and OLED Battery operated devices - especially those driven by 2-cell alkaline/NiMH battery


VoltageOutput


Efficiency Package Features StatusNCP1403 PFM 300KHz 1.2-5.5V up to 15V 50mA 82% SOT23-5 Enable pin A

NCP1406 PFM 600KHz 1.2-5.5V up to 25V 50mA@Vo=15V 25mA@Vo=25V

85% SOT23-5 Enable pin S (RTM Jun 04)

NCP1400 PWM 180KHz 0.8-5.5V 1.8-5.0V 100mA 88% SOT23-5 Enable pin ANCP1402 PFM 180KHz 0.8-5.5V 1.8-5.0V 200mA 85% SOT23-5 Enable pin ANCP1423 PFM 800KHz 0.8-5.0V 1.5-5.0V 200mA 95% Micro8 Sync-rect, Low-battery-

detect, Auto-dischargeS (RTM Sep 04)

NCP1410 PFM 600KHz 1.0-5.5V 1.5-5.5V 250mA 92% Micro8 Sync-rect, Low-Battery Detection

A

NCP1411 PFM 600KHz 1.0-5.5V 1.5-5.5V 250mA 92% Micro8 Sync-rect, Low-Battery Detection, Ring-Killer

A


A

NCP1422 PFM 1.2MHz 1.0-5.0V 1.5-5.0V 800mA 94% QFN Dual-sided

Sync-rect, True-cutoff, Low-battery-detect

A

NCP1450 PWM 180KHz 0.8-5.5V 1.8-5.0V 1000mA (ext switch)



VoltageOutput


Efficiency Package Features StatusNCP1403 PFM 300KHz 1.2-5.5V up to 15V 50mA 82% SOT23-5 Enable pin A

NCP1406 PFM 600KHz 1.2-5.5V up to 25V 50mA@Vo=15V 25mA@Vo=25V

85% SOT23-5 Enable pin S (RTM Jun 04)

NCP1400 PWM 180KHz 0.8-5.5V 1.8-5.0V 100mA 88% SOT23-5 Enable pin ANCP1402 PFM 180KHz 0.8-5.5V 1.8-5.0V 200mA 85% SOT23-5 Enable pin ANCP1423 PFM 800KHz 0.8-5.0V 1.5-5.0V 200mA 95% Micro8 Sync-rect, Low-battery-

detect, Auto-dischargeS (RTM Sep 04)

NCP1410 PFM 600KHz 1.0-5.5V 1.5-5.5V 250mA 92% Micro8 Sync-rect, Low-Battery Detection

A

NCP1411 PFM 600KHz 1.0-5.5V 1.5-5.5V 250mA 92% Micro8 Sync-rect, Low-Battery Detection, Ring-Killer

A


A

NCP1422 PFM 1.2MHz 1.0-5.0V 1.5-5.0V 800mA 94% QFN Dual-sided

Sync-rect, True-cutoff, Low-battery-detect

A

NCP1450 PWM 180KHz 0.8-5.5V 1.8-5.0V 1000mA (ext switch)


A = active, S = Sampling, D = under developmentRTM = release to market

Key Features High efficiency, True-Cutoff, Several of the devices include low battery detector

Complete portfolio that covers a majority of the needs in portable electronics

OLEDDriver

Flash LightLED Driver

Flash LightLED Driver

127 www.onsemi.com

Applications Personal Digital Assistant (PDA) Digital Camera Hand-held Instrument Conversion from One or Two NiMH or NiCd, or One Li-ion Cell to 3.3V/5.0V

Benefits High Efficiency and Low Quiescent Current Extend Battery Life. Built-in Synchronous Rectifier (PFET) Eliminates One External Schottky Diode High Switching Frequency Allows Small Size Inductor Integrated Low-Battery-Detector Simplifies System Design

NCP1410250mA Sync-Rect PFM Step-up DC-DC Converter with Low-Battery-Detector

Additional Information See www.onsemi.com/NCP1410– Datasheet, case outlinehttp://www.onsemi.com/pub/Collateral/NCP1410-D.PDF

Ordering Information NCP1410DMR2 Micro-8 4000 per reel

Features High Efficiency 92% Typical Very Low Quiescent Current of 9uA Typical Built-in Synchronous Rectifier (PFET) High Switching Frequency Up To 600KHz Integrated Low-Battery-Detector Micro-8 package 1V startup Output Voltage from 1.5V to 6.0V

DescriptionIt integrates a Sync-Rect PFM Step-Up DC-DC Converter and a Low-Battery-Detector in a Micro-8 package. It is specially designed for battery operated hand-held electronic products up to 250mA loading.

Eval Board

available

128 www.onsemi.com

NCP1411250mA Sync-Rect PFM Step-up DC-DC Converter with Low-Battery-Detector

and Ring-Killer

More Information Online:See www.onsemi.com/NCP1411– Datasheet, case outline http://www.onsemi.com/pub/Collateral/NCP1411-D.PDF

Ordering Information NCP1411DMR2 Micro-8 4000 per reel

Applications Personal Digital Assistant (PDA) Digital Camera Hand-held Instrument Conversion from One or Two NiMH or NiCd, or One Li-

ion Cell to 3.3V/5.0V

Features Innovative Ring-Killer guarantees quiet operation High Efficiency 92% Typical Very Low Quiescent Current of 9uA Typical Built-in Synchronous Rectifier (PFET) High Switching Frequency Up To 600KHz Integrated Low-Battery-Detector 1V startup Output Voltage from 1.5V to 6.0V

DescriptionIt integrates a Sync-Rect PFM Step-Up DC-DC Converter and a Low-Battery-Detector in a Micro-8 package. In addition, it incorporates an innovative Ring-Killer circuitry which guarantees quiet operation in discontinuous conduction mode. It is specially designed for battery operated hand-held electronic products up to 250mA loading.

BenefitsQuiet operation reduces electromagnetic interferenceExtend Battery LifeExtend Battery LifeEliminates One External Schottky DiodeAllows Small Size InductorSimplifies System Design

Eval Board

available

129 www.onsemi.com

NCP1411250mA, Sync-Rect, PFM, Step-Up DC-DC Converter with Low-Battery

Detector and Ring Killer

Ring Killer Improves EMI in Discontinuous Conduction ModeRing Killer Improves EMI in Discontinuous Conduction Mode

Normal DC-DCNormal DC-DC NCP1411NCP1411

The MAX1676 has a similar function but requires:• an additional external resistor• a larger 10-pin package

Effect of Ring Killer

Circuit

130 www.onsemi.com

• 25V low side switch, 1.2V Feedback Voltage• Max output current: 50mA @ Vout=15V, 25mA @ Vout=25V• 85% Efficiency at Vout = 25 V, Iout = 25 mA, Vin = 5.0V • 85% Efficiency at Vout = 15 V, Iout = 50 mA, Vin = 5.0V• Low Operating Current of 15 uA (Not Switching)• Ceramic Capacitors• PFM switching up to 1MHz

25 VC2

4.7FC3C1

10F

R1

Enable

R2

NC

P

1

2

3

5

4

CE

FB

VDD GND

LX

VIN VOUT

L 4.7 H D MBRM130LT1

1.8 V to 5.5 V

5 pF to 150 pF

C4

150pF

Applications• Cell Phone OLED Driver• PDAs• Digital Cameras• Handheld Games• Portable Audio

NCP1406 25V PFM Step-Up DC-DC Converter for OLED Bias

131 www.onsemi.com

Charger Control

Type Device Function Features Package Status

ANALOGNCP1800 Li Ion Battery Charger IC

Charger status output, programmable current regulation Micro 8 NOW

NTHD4102P P-Ch, Trench MOSFET, 20V, Dual 100m-ohm @ -4.5V ChipFET 1Q03

NTHS4101P P-Ch, Trench MOSFET, 20V, Single 40m-ohm @ -4.5V ChipFET 1Q03

NTHS5441 P-Ch, Trench MOSFET, 20V, Single 60m-ohm @ -4.5V ChipFET NOW

NTMS2P102L FETKy, P-CH MOSFET + SCHOTTKY 90m-ohm @ -4.5V, 20V SO-8 NOW

NTGS3441 P-Ch, MOSFET, 20V, Single 135m-ohm @ -4.5V TSOP-6 NOW

NTGS3443 P-Ch, MOSFET, 20V, Single 100m-ohm @ -4.5V TSOP-6 NOW

MSQA6V1W5 Quad Zener Array SC-88,SOT-563 NOW

DF6A6.8FU Quad Zener Array SC-88,SOT-563 NOW

SMS05T1 Quad Zener Array SC-74 NOW

MMQA5V6T1 - 5.6-33 volts SC-59, SOT-563 NOW

MMQA33T1

MM3Z2V4T1- 2.4 - 27 volts SOD-232 NOW

MM3Z27T1

MMBZ5V6ALT1 - 5.6 - 33 volts SOT-23 NOW

MMBZ33VALT1

MBRM120ET1,-LT1 20V, 1 Amp, Low VF,Low IR Powermite NOW

MBRM110ET1,-LT1 10V, 1 Amp, Low VF,Low IR Powermite NOW

MBR0520,0530,0540 Reverse Battery Protection 20V, 30V, 40V, 0.5Amp,Low VF SOD-123 NOW

1PMT16A Charger Control Protection 16V,175Watt TVS Powermite NOW

MBT35200MT1 35V PNP BJT, Low VCE(sat) TSSOP NOW

MMBT6589T1 30V PNP BJT, Low VCE(sat) TSSOP NOW

MBT589LT1 30V PNP BJT, Low VCE(sat) SOT-23 NOW

NSL35TT1,12TT1 35V,12V PNP BJT, Low VCE(sat) SC-75 NOW

SOT-353/SC-88A NOW

SOT-553/SOT-656 1Q03

SOT-353/SC-88A NOW

SOT-553/SOT-656 1Q03

SOT-353/SC-88A NOW

SOT-553/SOT-656 1Q03

SOT-353/SC-88A NOW

SOT-553/SOT-656 1Q03

MOSFETS

DISCRETE COMPONENTS

ESD protection of data lines on SIM and bottom connector

Quad Common Annode TVS

Zener Regulator

Dual Common Anode TVS

Reverse Battery Protection

Switch

STANDARD LOGIC

MC74HC1Gxx Control Logic

MC74HC1G66, 1GT66 Analog Switch, Interface with with 1.5V uP

High Speed, Low PD

MC74VHC1Gxx Control Logic High Speed, Low PD

Low R(on), Low PD

Open Drain, Low PDBias Control, analog switch,Loop Filter switchMC74VHC1Gxx

132 www.onsemi.com

Micro8

Footprint: 3 x 4.9mm

PIN CONNECTIONS

Charger Control : NCP1800Single-Cell Li+ Battery Charge Controller

Eval Board

available

NTHD4P02FNTHD3101F

133 www.onsemi.com

Applications Portable Phones PDAs Handheld Equipment, Battery Operated Portable Devices

Description The NCP1800 is a constant current, constant voltage (CCCV) lithium ion battery charge controller. The external sense resistor sets the full charging current and the termination current is 10% of the full charge current (0.1 C). The voltage is regulated at +1% during the final charge stage. There is virtually zero drain on the battery when the input power is removed.

Ordering Information NCP1800DM41R2: Micro8TM 4000 Units T&R NCP1800DM42R2: Micro8TM 4000 Units T&R

Features 4-phase charging algorithm Integrated voltage and programmable current

regulation. Integrated cell conditioning for deeply discharged

cell. Better than 1% voltage regulation. Lowest standby current (0.5uA) in the industry. Charger status output for LED or host processor

interface. Blocking diode not required with PNP transistor. Integrated over-voltage protection. Micro8TM package.

Benefits Provides good safety for Li+ battery charging Provides different charging options for different Li+

battery chemistries. Prolongs battery life by lightly charging it when it is

deeply discharged. Enhances system safety. Maximizes battery capacity usage Easy interface to the host system.

Reduces parts count. Enhances system safety. Saves space.

NCP1800Single-Cell Li+ Battery Charge Controller

134 www.onsemi.com

NCP1800 + NCP345 Application

Battery

Adapter

Internal ChargerNCP1800

ResetGenerator

Sim CardSupply

DC/DCConverter

Digital Base-bandDSP, MCU & Memory RF

SIM Card

LDO (Digital)

LDO(Digital)

LDO(RF)LDO

(RF)LDOs(RF)

Li-Ion

FET or PNP

OVICNCP345

Optional(only

neededif adapter output has

high voltage

transients, example powered

from a car battery)

135 www.onsemi.com

NCP345/6Over-voltage Protection

TSOP-5

SN SUFFIX

CASE 483

PIN CONNECTIONS

(Top View)

NCP345 is optional (only needed if adapter output has high voltage transients, example

powered from a car battery).

• First “Over-voltage Protection IC” in the industry that withstands voltage transients up to 30V.

• Fast over-voltage turn off time of less than 1 microsecond.

• Over-voltage threshold of 6.85V (nominal).• Under-voltage lock out of 2.8V (nominal).• CNTRL input compatible with 1.8V logic levels.• Suitable for 1 cell Li-ion and 3/4 cell NiCD/NiMH

applications.

NTGS3441T1P-CH MOSFET

136 www.onsemi.com

LDO Voltage Regulators(Low Drop Out)

Functional Description

These devices provide a regulated output voltage when a greater unregulated voltage is presented

at the input. It provides an accurate, stable, clean and quiet voltage to a particular sub-system.

The devices are often less expensive and efficiency alternatives to DC-DC converters.

Typical Applications Battery operated devices Cell phones and PDAs Portable electronics and instrumentation

Device Max Iout Device Max IoutNCP4523 Triple outputs 150,80,80mA NCP502 80 mAMC78PC 150mA NCP562 80 mANCP4561 80mA NCP563 80 mAMC33761 80mA NCP561 150 mAMC33762 Dual outputs 80,80mA MC78LC 80 mAMC33765 Five outputs NCP552 80 mAMC33263 150 mA NCP553 80 mANCP512 80 mA NCP551 150 mA

Device Max Iout Device Max IoutNCP4523 Triple outputs 150,80,80mA NCP502 80 mAMC78PC 150mA NCP562 80 mANCP4561 80mA NCP563 80 mAMC33761 80mA NCP561 150 mAMC33762 Dual outputs 80,80mA MC78LC 80 mAMC33765 Five outputs NCP552 80 mAMC33263 150 mA NCP553 80 mANCP512 80 mA NCP551 150 mA

ON Advantage Broad portfolio to fit every application. Low current drains that are industry leading; 3 µA quiescent current Industry leading footprints; SC-70

ErrorAmplifier

Vin Vout

GND

PassElement

Reference voltage

137 www.onsemi.com

LDO : Selection Guide(80~300mA)

Device Vin Max Iout Iq PSRR Noise Dropout Enable Bypass Package Voutmax typ(max) cap

Very Low Noise (for Handset RF power supply)NCP4523 6V Triple outputs

150,80,80mA70,70,70 µA 70dB 60µV 220,160,160mV Y N SSOP8 2.8,3.0

MC78PC 9V 150mA 35 µA 70dB 30µV 200mV @100mA Y N SOT23-5 1.8,2.5,2.8,3.0,3.3,5.0NCP4561 12V 80mA 180 µA 70dB 35µV 140mV @60mA Y N SOT23-5 2.8MC33761 12V 80mA 180 µA 70dB 35µV 140mV @60mA Y N SOT23-5 2.5,2.8,3.0,5.0MC33762 12V Dual outputs

80,80mA180,180uA 70dB 35µV 140mV @60mA Y N Micro8 2.5,2.8,3.0

MC33765 12V Five outputs 30,40,50,60,

150mA

470uA (total device)

60dB 25~40µV

110mV @ 80% of max current load

Y Y TSSOP16 2.8,3.0

MC33263 12V 150 mA 170(200) µA 70dB 25µV 137mV @100mA Y Y SOT23L-6 2.8,3.0,3.3,4.0,5.0Low Iq, High PSRR (for Handset Baseband power supply)

NCP512 6V 80 mA 40(90) µA 50dB 180µV 180mV @80mA Y N SC70-5 1.5,1.8,2.5,2.7,2.8,3.0,3.3,5.0NCP500 6V 150 mA 195(300) µA 62dB 60µV 170mV @150 mA Y N SOT23-5/QFN1.5,1.8,2.5,2.7,2.8,3.0,3.3,5.0NCP511 6V 150 mA 40(100) µA 50dB 110µV 100mV @100mA Y N SOT23-5 1.5,1.8,2.5,2.7,2.8,3.0,3.3,5.0NCP502 12V 80 mA 40 µA 55dB 130µV 400mV @40mA Y N SC70-5 1.5,1.8,2.5,2.7,2.8,3.0,3.3,5.0

Very Low Iq (for non-RF battery-powered products)NCP562 6V 80 mA 3 µA 25dB 65µV 240mV @80mA Y N SC82-AB 1.5,1.8,2.5,2.7,2.8,3.0,3.3,5.0NCP563 6V 80 mA 3 µA 25dB 65µV 240mV @80mA N N SC82-AB 1.5,1.8,2.5,2.7,2.8,3.0,3.3,5.0NCP561 6V 150 mA 4(8) µA 20dB 60µV 140mV @150mA Y N SOT23-5 1.5,1.8,2.5,2.7,2.8,3.0,3.3,5.0MC78LC 12V 80 mA 1(3) µA 25dB 90µV 30mV@1mA N N SOT23-5 1.5,1.8,2.5,2.7,2.8,3.0,3.3,5.0NCP552 12V 80 mA 3(6) µA 25dB 90µV 680mV@80mA Y N SC82-AB 1.5,1.8,2.5,2.7,2.8,3.0,3.3,5.0NCP553 12V 80 mA 3(6) µA 25dB 90µV 680mV@80mA N N SC82-AB 1.5,1.8,2.5,2.7,2.8,3.0,3.3,5.0NCP551 12V 150 mA 4(8) µA 25dB 100µV 40mV@10mA for 2.7-5.0V

130mV@10mA for 1.5-2.5VY N SOT23-5 1.5,1.8,2.5,2.7,2.8,3.0,3.3,5.0

300mA, High PSRR LDO for Audio Amp DriverNCP2860 6V 300 mA 355(700) µA 60dB 60µV 150mV @300mA Y N Micro 8 2.77V (default), Other Vout

can be adjusted by external resistors.

138 www.onsemi.com

Voltage Supervisors


Primarily monitor the voltage of a battery operated device and signal a microprocessor when the voltage

goes from acceptable to unacceptable or vice versa. This allows the system to store sensitive memory

or protect voltage sensitive ICs

Typical Applications Battery operated devices Microprocessor driven systems

ON Advantage Among the lowest current drain (quiescent current) values in the world! Smallest package offering with the NCP304/305

Device Package DescriptionNCP300/301 SOT23-5 Low current general purpose voltage supervisor seriesNCP302/303 SOT23-5 Low current voltage supervisor series with programmable delayNCP304/305 SC70 Ultra-small (SC70) voltage supervisorNCP803 SOT23-3 3-pin voltage supervisorMAX809/810 SOT23-3 Industry standard 3-pin voltage supervisorMAX707/708 Micro8, SO8 Industry standard voltage supervisor with master reset and

power fail output

Device Package DescriptionNCP300/301 SOT23-5 Low current general purpose voltage supervisor seriesNCP302/303 SOT23-5 Low current voltage supervisor series with programmable delayNCP304/305 SC70 Ultra-small (SC70) voltage supervisorNCP803 SOT23-3 3-pin voltage supervisorMAX809/810 SOT23-3 Industry standard 3-pin voltage supervisorMAX707/708 Micro8, SO8 Industry standard voltage supervisor with master reset and

power fail output

139 www.onsemi.com

Under Voltage Sensing


Reset Time-out Counter


Reset Time-out Counter Manual Reset



WDI circuit & WD Time-out Counter



Power Fail Comparator Manual Reset



WDI circuit & WD Time-out Counter Manual Reset



Power Fail Comparator

Battery Switch-Over Circuit Manual Reset



WDI circuit & WD Time-out Counter

Power Fail Comparator Manual Reset

NCP300/1NCP302/3NCP304/5

MAX809/810NCP803

NA (MAX811/812)NA (MAX6335/6/7)

NA (MAX824)

NA (MAX823)

MAX707/708NA (MAX6342/3/4)

NA (MAX705/706)

NA (MAX703/704)

Voltage detectors

Reset generators

µP Supervisors

µP Supervisors+

Green color: ON portfolioBlue color: Industry standard

SUPERVISORY ICs: Part Descriptions

140 www.onsemi.com

Power Management Block Library

AVAILABLE DEVELOPMENT

AD converter10bit+sign ; 1MHz Crystal Buffer 32KHz

Supervisory•Voltage Detection•Power On Reset•Power Up/Down Sequencing

Application SpecificLDOs

• Fixed• Programmable• 10 mA to 300 mA• High PSRR for RF

Battery Charging

•CCCV Battery

Charger

•Pulse Battery

Charger

•1 Li-ion and/or 3

NiMH

DC-DC Blocks

•PWM•PFM•Charge pumps•Step Up•Step Down•Step Up/Down•10 mA to 250+ mA

DA converterfor accessories

Real Time Clock +Back-up Battery

monitoring

Touch Screen InterfaceX:Y stylus input

Touch detectTouch pressure

Interface

I 2 C / S P I / U S B

Temperature Sensor

Analog Switches

Driver Blocks• LEDs (color or white)• Vibrator / Buzzers

Internal Blocks

• Digital IO Subset• Analog IO• ESD Clamp• Band-gap Ref• Thermal Shutdown• RC Oscillator 1 MHz

Audio Blocks

•Stereo Headphone Amp•Class-D Spkr Amplifier•Microphone Amplifier •Bridge Speaker Amp•135 mW- 2.5 W•Drive down to 8W•Anti-Pop Noise Circuitry•Digital Volume Control•Headset Detection•Headphone Amplifier

(No coupling capacitors)

16 Bit Sigma-Delta

Audio ADC Converter

Audio DAC Converter

Crystal Buffer 19.2MHz

Battery Identifier

SIM InterfaceLevel Shift / Sequencing

RF PA ControlGSM / Edge

Dynamic VoltageManagement

Auto Gain Control for Audio

141 www.onsemi.com

Power Management ASICs (PMUs or PM ICs)(Complete Power Management SoC)


These are full solutions for the markets they target.

Typical Applications PDA, Cell phone, GPS, Handheld electronics Battery operated devices

ON Advantage Design blocks that fulfill touch screen stylus driven applications Audio block that services a stereo earpiece, loudspeaker, and microphone all at once Comprehensive system solutions to bring part count, board space, and cost down Solutions for PDA and cellular; these may also be applicable to other handheld electronic requirements

DeviceTarget

App LDOsDC DC Buck

Touch Screen Audio

Battery Charger

LED Driver

Vibrator Driver

Buzzer Ringer SPI A/D Reset

USB buffer Status

NCP4115 Cellular 7 up/down Y 1 Y I2C Y Y S

DeviceTarget

App LDOsDC DC Buck

Touch Screen Audio

Battery Charger

LED Driver

Vibrator Driver

Buzzer Ringer SPI A/D Reset

USB buffer Status

NCP4115 Cellular 7 up/down Y 1 Y I2C Y Y S

S = sampling (schedule for mass production from April 2003)

142 www.onsemi.com

Description

This 64 pin BGA device acts as the power management IC for cellular phone. Its functional blocks include:

• Li Ion CCCV Battery Charger.• 7 Low Noise LDOs with output voltages ranging from 1.8

to 3.0 V: 1 x 175 mA, 2 x 150 mA, 1 x 75 mA, 3 x 50 mA.• 2 General Purpose LDOs for Vibration Motor and LEDs.• 19.2 MHz inverter (clock slicer): 500 mV p-p to LDO4

voltage.• DC/DC step up/down converter: 1.5 to 5 V and 100 mA

max• Supervisory Reset Block with delay, active Low.• UVLO.• USB Buffer Circuit.• Bandgap Reference.• I2C Interface.• Zener zapping for accurate references and oscillator

frequency.• Thermal Shutdown with hysteresis.• 2 comparators.• Battery recognition function• Package: 7 x 7 mm, 64 pin BGA

NCP4115 Power Management IC for CDMA phone

Author Name11-Apr-02 www.onsemi.com143

Thank You

Q&APlease select ON semiconductor as

your value supplier.

solution for portable customer

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