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SKIM 4

SPT IGBT Modules

SKiM 200GD128D

Preliminary Data

Features

!

"

# $

% & ' ()# $$

$ )*+, -( !-( $$"

$' (

$

Typical Applications

$ $

' )( $

! "

GD

Absolute Maximum Ratings . */ 0( $

Symbol Conditions Values Units

IGBT1(2 3*44 1

( . */ !64" 0( 374 !3,/" )

(89 . 3 ,44 )

12 : *4 1

; !" < =4 >>> 3/4 !3*/" 0( ?> 3*/ 0(

1 )( 3 > */44 1

Inverse diode% . */ !64" 0( 3/4 !344" )

%89 . 3 ,44 )

%9 . 34 @ >@ ; . 3/4 0( 3=44 )

Characteristics . */ 0( $

Symbol Conditions min. typ. max. Units

IGBT12!" 12 . 1(2@ ( . A ) ==/ // A// 1

(2 12 . 4@ 1(2 . 1(2@; . */ 0(

43 4, )

1(2+ ; . */ !3*/" 0( 3 !4B" 33/ !34/" 1

(2 ; . */ !3*/" 0( A !7" 7 !34" C

1(2 ( . 3/4 )@ 12 . 3/ 1

; . */ !3*/" 0( '

3B !*3" *,/ !*//" 1

( 12 . 4@ 1(2 . */ 1@ . 3 9DE 33 %

( 12 . 4@ 1(2 . */ 1@ . 3 9DE 3 %

( 12 . 4@ 1(2 . */ 1@ . 3 9DE 46 %

#(2 3/ D

8((F22F

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Fig. 1 Output characteristic, inclusive RCC'+ EE'

Fig. 2 Rated current vs. temperature IC

= f (TC

)

Fig. 3 Turn-on /-off energy = f (IC

) Fig. 4 Turn-on /-off energy = f (RG

)

Fig. 5 Transfer characteristic Fig. 6 Gate charge characteristic

SKiM 200GD128D

2 24-11-2005 SEN by SEMIKRON

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Fig. 7 Switching times vs. IC

Fig. 8 Switching times vs. gate resistor RG

Fig. 9 Transient thermal impedance of

IGBT ZthJC

= f (tp

); D = tp/t

c= t

p* f

Fig. 10 Transient thermal impedance of inverse diodes

IGBT ZthJC

= f (tp

); D = tp/t

c= t

p* f

Fig. 11 CAL diode forward characteristic, incl. RCC'+ EE'

Fig. 12 CAL diode peak reverse recovery current

SKiM 200GD128D

3 24-11-2005 SEN by SEMIKRON

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Fig. 13 Typ. CAL diode recovered charge

Dimensions in mm

( H9 =

- ( H9 =

This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.

This technical information specifies semiconductor devices but promises no characteristics. No warranty or guaranteeexpressed or implied is made regarding delivery, performance or suitability.

SKiM 200GD128D

4 24-11-2005 SEN by SEMIKRON