SK Hynix is a leading supplier of advanced semiconductor memory solutions and Image sensor products. We design, develop, manufacture and market a wide variety of DRAM, NAND Flash mem-ories and CMOS Image Sensors (CIS). Memory components are essential in today’s leading-edge computing, consumer and wireless communications applications. Image Sensors are used in a wide range of portable consumer electronics products such as handsets and handheld games.| DRAM, NAND Flash memories and CMOS Image Sensors are main products offered by SK Hynix

| 2011 Revenues of USD$9.4B | Market capitalization of USD$13B as of December 2011

| Global presence with 3 manufacturing sites and 30 sales offices worldwide | 22,423 employees worldwide

Corporate Profile

2012 02 SK Telecome becomes Hynix's largest shareholder Appointed Mr. Tae-won Chey as the new Chairman & Chief Executive Office Appointed Mr. Sung Min Ha as the Chairman of Board of Directors Developed 5M CIS Sensor

2011 09 Introduced 30nm class 4Gb LPDDR2 Mobile DRAM Launched 5M CIS Sensor 08 Developed 30nm class 4Gb High Speed DDR3 DRAM Launched 1M HD and 3M CIS Sensor 07 Developed 40nm class 256Mb LPDDR1 Mobile DRAM Introduced memory solutions for Small Form Factor Systems; ECC SO-DIMM, ULP Mini-DIMM, VLP ECC UDIMM Developed 20nm class 64Gb MLC NAND Flash with High Speed Developed 30nm class 1Gb SLC NAND Flash

04 Developed 30nm class 2Gb high performance DDR4 DRAM 03 Developed 20nm class 32Gb MLC NAND Flash with High Speed Developed 40nm class 16Gb DDR3 DRAM using TSV technology

2010 12 Developed 40nm class 2Gb DDR3 2133Mbps 10 Introduced 30nm class based 2.5 inches SSD 09 Introduced New 2M shellUT Type CSP Image Sensor 07 Developed 40nm class 2Gb DDR3 1866Mbps 06 Developed 40nm class DDR3 operating at 1.25V 04 Developed DDR3 16GB LRDIMM 03 Developed industry’s first stack based on ‘Wafer Level Package’ technology 02 Developed 40nm class 64Gb NAND Flash memory 01 Developed the world’s first 2Gb Mobile Low Power DDR2 DRAM

Recent Accomplishments

SK Hynix Dreams Good Memory

SK Hynix Products

The simply designed symbolic mark of superposition of two circles implies SK Hynix’s will to develop environment-friendly products. The image of a sprout and green wings representing reborn nature symbolizes SK Hynix’s volitional environmental management initiative. The ‘Eco-mark’ conveys our passions to contribute to customers and society with ecological practices (Environment Conscious-ness Outreach), and environmental awareness of each employee (Environment Creates Ourselves)

Computing Memory

Graphics Memory

Consumer & NetworkMemory

Mobile Memory

NAND Flash CMOS Image Sensor

04

General DescriptionThe mainstream DDR3 SDRAM can transfer data twice as fast as the previous generation DDR2 SDRAM. DDR3 SDRAM boasts high perfor-mance and low power consumption. It supports data transfer rate up to 1866Mbps and operates at power supply voltages as low as 1.25V. The DDR3 SDRAM is eco-friendly which contributes to lower power dissipation and extended battery life in mobile systems. The low-power operation of DDR3L 1.35V DDR3 SDRAM, is also beneficial in high-density memory systems in power constrained applications such as serv-ers and data centers where it can help customers reduce power consumption and utility expenditures, improve reliability and reduce carbon emissions. SK Hynix offers DDR3 in 1Gb and 2Gb densities, now in volume production, and 4Gb which is currently in pre-production. SK Hynix’s DDR3 modules exploit functions such as ZQ Calibration, Fly-by topology, Dynamic On-die-termination, and Write Levelization to ensure better signal integrity which guarantees higher performance.

DDR2 VS. DDR3

Items DDR2 DDR3 / DDR3L

Data Rate 800,1066,1333,1600,1866Mbps

VDD / VDDQ 1.5V ± 0.075V 1.35V ± 0.1V / -0.067V

Support Density 1Gb ~ 4Gb

Bank 8 Bank

Data Pre-fetch 8 bit

Package Type78 FBGA for x4 / x8

96 FBGA for x16

Interface SSTL -15

DQS Signaling Differential Only

Driver Calibration Self Calibration with ZQ pin

DQS-CLK De-Skewing ○ (Write Leveling)

On Die Termination ○ (Dynamic ODT)

Reset pin ○ (Soft power-up)

DDR3 VS. DDR3LPower Comparison (Watt)

( Calculation with 2R×4 RDIMM, 1333Mbps )

DDR3

8GB4GB

DDR3

DDR3L DDR3L

17%15%

Key Features of High Speed Interface

ZQ Calibration•Reduce variation by Vdd / temp •Minimize output skew / jitter

Fly-by topology•For higher frequencies •On-DIMM termination

Dynamic ODT•Changeable termination strength without issuing an MRS command•Improved Signal Integrity

Write Levelization•Minimize tDQSS by de-skewing •Gain system timing margin

Computing MemoryDDR3

Pushing the Limits of Performance

05

General DescriptionEnvironmental protection has become a priority of governments and corporations worldwide. Applications such as highly virtualized data centers, servers and supercomputers that consume a lot of power can take advantage of the low power features of the DDR3 SDRAM to enable cooler and power efficient systems, while lowering the cost of utilities. SK Hynix is responding to the industry demand for eco-friendly or ‘green’ products that reduce power consumption and carbon emissions without compromising on performance or system reliability. The DDR3(1.5V) features 25% lower power consumption than earlier generations of computing memory solutions. The 1.35V(DDR3L) power supply option yields an additional 20% in power savings and will be desirable in applications requiring Energy Star Compliance. The product would also be ideal for mobile applications such as notebooks, where it markedly extends battery life. The new design philosophy adopted by SK Hynix’s advanced 30nm process will benefit future high density DRAM components. The new 30nm process along with SK Hynix’s de-sign optimization and internal signaling innovations reduces power consumption and enhances performance. Devices operating at 1.5V and 1.35V(Low Voltage) exhibit similar bandwidth characteristics. The demand for low power consumption in mobile systems such as notebooks; and server systems such as datacenters, is very strong.SK Hynix’s strategy is to satisfy customers needs for reduced power consumption and improved performance with advancements in process technology, such as the current 30nm and the future 20nm class DRAM products.

Density 32GB RDIMM

Organization 4Gx72

Speed 1600Mbps

Number of Rank 4 Ranks

Package Halogen-Free

RDIMM

Density 8GB SODIMM

Organization 1Gx64

Speed 1600Mbps

Number of Rank 2 Ranks

Package Halogen-Free

SODIMM

Main MemoryHigh Density and Reliability

Ultrabook is a new category of Notebook, designed to be thin and light with Media tablet-like features (AOAC: Always On Always Connected, instant on, long battery life). Demand is expected to increase in 2012 as retail price gets attractive, capturing a significant share of the notebook market in the near future.

[ Ultrabook PC Market Forecast ]

New Application - Ultrabook

DDR3 SDRAM, with its superior performance and power savings, is recommended in mobile PCs such as notebooks, netbooks and UltraBooks. Demand for high bandwidth DDR3 with speeds up to 1600Mbps, is emerging as OEMs are grad-ually adopting 1600Mbps SODIMM in quad-core CPU plat-forms which are expected to ramp in 2012.

[ Notebook DDR3 1600 Adoption (DDR3 Based) ]

Speed Transition in Notebook

0

10

20

30

40

50

60

70

80

90

Notebook Ultrabook

2% 3% 4% 7% 9% 9%

12% 13% 17%

20% 25%

28%

4Q 1Q11 2Q 3Q 4Q 1Q12 2Q 3Q 4Q 1Q13 2Q 3Q

22%

33%

49%

6%

100%

80%

60%

40%

20%

0%1Q11 2Q11 3Q11 4Q11 1Q12 2Q12 3Q12 4Q12

1066

1333

1600

1866

( Source : SK Hynix Marketing )( Source : SK Hynix Marketing )

Unit : Mpcs

General DescriptionSince the world’s first Graphics DDR SDRAM was introduced in 1999, SK Hynix has played a leadership role in the Graphics memory market by offering cost effective and high performance products.SK Hynix’s newly introduced 3xnm class 2Gb GDDR5 offers 7Gbps speed (bandwidth of 28GB/sec with 32-bit I/O) required for high-end graph-ics. In addition to the improved speed and the higher density, power consumption of the 2Gb GDDR5 is significantly reduced with the 1.35V power supply option. This results in an estimated 20% reduction in power consumption compared to the 1.5V variants, meeting required eco-friendly specifications. The 2Gb GDDR5 meets the needs of graphics applications in high-end desktop and notebook PCs. It is suitable for super computers with General Purpose GPU (GPGPU) architecture, providing high memory bandwidth to the GPU performing parallelized vector operations.SK Hynix also supports GDDR3 and DDR3 products for performance and mainstream graphics applications. SK Hynix will continue to provide value to customers with leadership products featuring high performance and quality.

Items Features

Op. Frequency Max 7.0Gbps

Power Supply VDD(Q) = 1.5V & 1.35V

I / O x32 / x16

Package 170ball FBGA (12mmx14mm)

Banks / Prefetch 16Banks / 8bit

Interface POD_15

30nm class 2Gb GDDR5 Features

Graphics MemoryHigh Speed and Density

Graphics Product Features Comparison

Items DDR3 GDDR5

VDD(Q) 1.35V / 1.5V 1.35V / 1.5V

Speed Max 1.2GHz Max 7.0Gbps

Burst length 4 / 8 8 only

Package 96ball FBGA 170ball FBGA

Density 1Gb / 2Gb / 4Gb 1Gb / 2Gb

I / O x16 x32 / x16

Banks 8 16

BST(Boundary Scan Test)

× ○

Graphics Applications

PC Graphics

HPC / Server

Game Console

Consumer

06

General DescriptionWe now live in the Digital Era. Digital televisions, DVD and Set-Top Box give us rich entertainment, while car infotainment systems provide comfort, security and convenience. In addition, powerful network systems connect these devices allowing them to communicate and share information. All these consumer appliances need semiconductor memory for performance improvement, power savings and size reduction. SK Hynix has a full line-up of DRAMs (Dynamic RAM) that meet the needs of a wide range of consumer applications. SK Hynix offers 128Mb~4Gb densities, packaged in TSOP-II and FBGA, operating at industrial temperature range of -40 to 85 and featur-ing very low power consumption. Many applications , such as Digital Television and Set-Top-Box have adopted DDR3 for its higher speed and density replacing legacy DRAMs.

Network MemorySK Hynix is offering a family of network-centric memory products that meet the special requirements of telecommunications and network applications. DRAM components offered include SDRAM, DDR, DDR2 and DDR3 in a wide range of densities, configurations and modular form factors. SK Hynix also offers Extended Temperature and Indus-trial Temperature ranges to ensure optimum performance in extreme environments.

Major Product 2Gb DDR3

Process 3xnm

Bit Organization256Mb x 8I/O , 8Bank128Mb x 16I/O , 8Bank

Op. FrequencyDDR3 2133 / 1866 / 1600 / 1333 / 1066Mbps

DDR3L 1866 / 1600 / 1333 / 1066Mbps

Power SupplyDDR3 VDD(Q) = 1.5V +/- 0.075V

DDR3L VDD(Q) = 1.35V + 0.100 / - 0.067V

Packagex8 : 78ball FBGA (7.5x11.0mm)x16: 96ball FBGA (7.5x13.0mm)

Interface SSTL-15

Function

Refresh 8192cycles / 64ms

DDR3 CL=5~14 / CWL=5~8 / BL=4/8

VDD CL=6~13 / CWL=5~8 / BL=4/8

Sales

DTV

Introduction Growth Maturity DeclineTime

DDR3 DDR2 DDR1 SDR

STB

BlurayRouter

Automotive

Printer

HDD

ODD

DSC

Switch

New and Diverse

Consumer & Network Memory

07

08

General DescriptionSK Hynix has unleashed its strength in mobile memory technology, by offering a wide range of products to meet customer demand. As mobile devices get smaller, sleeker, lighter and customized; consumers are able to choose from a variety of mobile devices to keep them connected, entertained, informed, and productive. As consumer life styles become more mobile, there is ever increasing demand for connectivity. This re-quires higher performance memory with very low power consumption that supports extended battery life. SK Hynix Mobile Memory products offered in small footprint packages have superior power saving features useful in handheld devices such as Smart Phones, Media Tablets, MP3 Players, Digital Still Cameras, Handheld Game Consoles, e-Books, etc. SK Hynix’s rich mobile product portfolio, enables customers to deliver next-generation devices, accelerating time to market.

Mobile DRAM| Broad Product Line : LPDDR – up to 4Gb densities, LPDDR2 – up to 8Gb densities, LPDDR3 – up to 8Gb densities| Diverse Packaging Options : Discrete, KGD (Known Good Die), MCP (Multi Chip Package), PoP (Package on Package)| Small Form Factor Packages : For use in the most space-constrained mobile applications| Low Power Features : Programmable Drive strength, Partial Array Self Refresh, Temperature Compensated Self Refresh, Deep Power Down| Major Applications : Smart Phone, Media Tablet, MP3 Player, Digital Still Camera, Handheld Game Console, e-Book, etc.| LPDDR3 will be the next generation mainstream mobile memory, replacing LPDDR and LPDDR2.

Mobile MemorySmart and Mobile

[ Bandwidth Comparison ]

PRODUCT VOLTAGE BIT RATE BANDWITH

LPDDR 1.8V 400Mbps 1.6Gbps

LPDDR2 1.2V 1066Mbps 4.25Gbps

LPDDR3 1.2V 1600Mbps 6.4Gbps

( Source : SK Hynix Marketing ) [ Mobile DRAM Portion ] ( Source : SK Hynix Marketing )

( Unit : %, 1G Eq )

2010 2011 2012 2013 2014

LPDDRLPDDR2

LPDDR3Wide IO

2009

0% 1%

37%

63%62%

16%

46%

34%

MCP/PoP| Small Form Factor package saves space in mobile devices| High Capacity Data Storage and High Speed with Low Power Consumption| In-house manufacturing provides cost efficient solutions in a timely manner | Major Application - Smart Phone, Tablet PC, PDA, MP3 Player, Digital Still Camera,Handheld Game Console, e-Book and etc.

09

General DescriptionICIS(CMOS Image Sensor) is an imaging device that performs the role of an electronic film in digital photographing equipment. Image quality is key feature in CIS. SK Hynix CIS, manufactured on CMOS technology, offer unique form factors, speed, and superior image quality. Rapid growth in camera adoption in Smart devices has created strong demand for CMOS Image Sensor products. SK Hynix is dedicated to support CIS to cus-tomers worldwide and build strong long term partnerships with users. With consistent technology enhancements, SK Hynix will develop high quality products that meet or exceed customer needs.

CMOS Image Sensor High Resolution and Clarity

CIS

Applications

| Mobile Phone| Notebook, Web Cam| Tablet PC| Other Smart Devices

Image Sensor Applications & Resolution Trend

: Market Demand

: SK Hynix CIS Availability

Mobile phone

Notebook

Tablet PC

Smart Home Appliances

VGA 1.3M(HD)

2M(FHD)

3M 8M5M 12M›

Camera Attach Ratio on Mobile phone( Source : Techno System Research, Dec 2011 )

Dual Camera attached Mobile

Camera attached Mobile Phone

Mobile Phone

2009 2010 20122011 2013 2014 2015

Camera Attach Ratio on Tablet( Source: Techno System Research, Dec 2011 )

Camera attached Tablet

Tablet(Slate/iPad/eBook)

Camera Attach Ratio on Notebook( Source: Techno System Research, Dec 2011 )

Camera attached Notebook

Notebook

2009 2010 20122011 2013 2014 2015

1438

1157

306

158

200

2009 2010 20122011 2013 2014 2015

88 88

Unit : Mpcs

Unit : MpcsUnit : Mpcs

10

General DescriptionSK Hynix offers a broad range of NAND Flash products to suit a wide range of applications. NAND Flash components come in densities of 128Mb to 512Gb in TSOP, VLGA and FBGA package options. With the proliferation of digital content, NAND Flash memory products are used in a wide variety of consumer applications such as MP3, PMP, Digital Still Camera, Camcorder, Memory card, USB flash drive, gaming console, Navigation, etc. Currently, SK Hynix NAND Flash Memory has been adopted in mobile handsets and Media Tablets, and other consumer ap-plications. SK Hynix is also developing NAND based storage solutions for PCs and Servers. To meet the growing demand for high capacity and improved performance, SK Hynix offers HiFFS (Flash File System) and eHiFFS software for mobile and embedded applications.

NAND Flash Key Features

Items 3xnm 32Gb MLC 2xnm 64Gb MLC 2ynm 64Gb MLC

Voltage (VCC / VCCQ) 3.3V / 3.3V 3.3V / 3.3V 3.3V / 3.3V (1.8V)

Organization x8 x8 x8

Page & Block size (P/B) 8KB+448B / 2MB+112KB 8KB+448B / 2MB+112KB 8KB+640B / 2MB+160KB

tRC(min) / tWC (min) 25ns 20ns 16ns

tR (max) 200us 90us 90us

Program time (typ.) 1600us 1600us 1500us

Erase time (typ.) 2.5ms 3.5ms 5.0ms

Operating currentSDP / DDP 30mA(typ.) ~ 50mA(max) 30mA(typ.) ~ 50mA(max) 30mA(typ.) ~ 50mA(max)

QDP / ODP 30mA(typ.) ~ 60mA(max) 30mA(typ.) ~ 60mA(max) 30mA(typ.) ~ 60mA(max)

Function

Copyback ○ ○ ○

Cache Program ○ ○ ○

Cache Read ○ ○ ○

2 Plane Op. ○ ○ ○

IO speed SDR SDR DDR (200Mbps / 400Mbps)

Package TSOP / LGA LGA TSOP / LGA / BGA

Endurance

E/W Cycles / Retention 5K / 10years 3K / 10years 1K / year

NOP(Number Of Program / Page)

1 1 1

NAND FlashHigh Densities in Small Packages

NAND Flash Applications SK Hynix NAND Flash

Cell Type SLC MLC

Specification High Performance/Low Density

Middle Performance/Middle Density

PackageTSOPLGA

FBGA

TSOPLGA

Max Density TSOP 1GBFBGA 8GB

TSOP 64GBLGA 64GB

Computing

Consumer

Mobile

Data Storage

11

HiFFS SoftwareHiFFS is a flash file system solution for mobile applications. HiFFS is the essential system software for electronic devices which has Flash memory storage such as mobile phones, PDAs, MP3 players, PMPs, digital TVs, and digital camcorders.

SSD (Solid State Drive)The rapid adoption of SSD in PCs has made it the fastest growing NAND ap-plication. Because of its strengths - Speed, Performance, Reliability, and low Power Consumption – a number of computing devices such as NetBook, Notebook, Servers, etc have either replaced conventional hard drives with SSD, or SSD in conjunction with conventional storage to improve perfor-mance. The newly introduced UltraBook will accelerate the adoption of SSD in computing systems. SK Hynix offers SSDs for both mobile and personal computing devices.

•AES-256/128 Encryption•Native Command Queuing•S.M.A.R.T. Command•No External DRAM

•Superior Wear Leveling•Power Failure Protection•Intelligent Read Disturb Mgmt.•TCG – OPAL (Q2’12)

Features| Flash memory file system solution for mobile embedded system| Higher performance and reliability| Fully compatible with FAT 12 / 16 / 32 file system standards| Journaling error recovery mechanism| Support various NAND Flash memory types such as small block, large block, MLC and SLC.| Efficient bad block management and wear-leveling| Support UMS(USB Mass Storage) and external flash memory cards| Higher read / write performance| Fast booting, support various operating systems such as WinCE, Linux, Non-OS, and Windows Mobile

SK Hynix SSD

* Performance/ Power Consumption , Measured by IOMETER 2008 /̀MobileMark* 2007 **

SSD F/F Standard 2.5” mSATA 2.5” Cache-mSATA

Interface SATA 6.0Gbps SATA 6.0Gbps SATA 3.0Gbps

Connector 2.5” : Standard Mini PCIe Mini PCIe

Capacities (OP7%) 128/256GB 64/128GB 32GB

Dimension (typ.) 2.5”: 69.9 x 100 x 7(9.5) mm

30x 50.95 x 3.6(3.0) mm 30x 50.95 x 3.0 mm

Sequential Performance - 256KB, MAX *

Read: 500MB/sWrite: 505MB/s

Read: 450MB/sWrite: 490MB/s

Read: 260MB/sWrite: 250MB/s

Random Performance-256KB, MAX *

Read: 50K IOPS Write: 80K IOPS

Read: 25K IOPS Write: 65K IOPS

Read: 12K IOPS Write: 44K IOPS

Power ConsumptionActive: 0.82W

Idle: 0.26W (typ)Active: 0.52W

Idle : 0.23W (typ)Active: 0.38W

Idle : 0.21W (typ)

Voltage 5.0V±5% 3.3V±5%

Temperature RangeOperating, (Storage)

0 C̊ to 70 C̊ (-55˚C to 95˚C)

0 C̊ to 70 C̊ (-55˚C to 95˚C)

MTBF 2M ≤ 2M ≤BER 1 error in 1015 bits transferred 1 error in 1015 bits transferred

Software Support

APPLICATIONS

HiFFS Flash File System

Flash Memory

OS

Windows Mobile Linux Win CE

HY2012A

PR

Global Network

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