single n-channel mosfet rev.1.0 elm51432a-s 3 / 5 typical electrical and thermal characteristics...

http://www.elm-tech.com Rev.1.0 ELM51432A-S 1 / 5 ■General description ■Features ■Maximum absolute ratings ■Thermal characteristics Parameter Symbol Typ. Max. Unit Maximum junction-to-ambient Rθja 120 °C/W Parameter Symbol Limit Unit Drain-source voltage Vds 30 V Gate-source voltage Vgs ±20 V Continuous drain current(Tj=150°C) Ta=25°C Id 4.0 A Ta=70°C 3.6 Pulsed drain current Idm 15 A Power dissipation Tc=25°C Pd 1.56 W Tc=70°C 1.00 Operating junction temperature Tj 150 °C Storage temperature range Tstg - 55 to 150 °C ELM51432A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. ■Pin configuration ■Circuit S G D Single N-channel MOSFET • Vds=30V • Id=4.0A • Rds(on) = 30mΩ (Vgs=10V) • Rds(on) = 35mΩ (Vgs=4.5V) Ta=25°C. Unless otherwise noted. 1 3 5 6 2 4 Pin No. Pin name 1 DRAIN 2 DRAIN 3 GATE 4 SOURCE 5 DRAIN 6 DRAIN SC-70-6(TOP VIEW)

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http://www.elm-tech.com

Rev.1.0

ELM51432A-S

1 / 5

■General description ■Features

■Maximum absolute ratings

■Thermal characteristicsParameter Symbol Typ. Max. Unit

Maximum junction-to-ambient Rθja 120 °C/W

Parameter Symbol Limit UnitDrain-source voltage Vds 30 VGate-source voltage Vgs ±20 V

Continuous drain current(Tj=150°C)Ta=25°C

Id4.0

ATa=70°C 3.6

Pulsed drain current Idm 15 A

Power dissipationTc=25°C

Pd1.56

WTc=70°C 1.00

Operating junction temperature Tj 150 °CStorage temperature range Tstg - 55 to 150 °C

ELM51432A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance.

■Pin configuration ■Circuit

S

G

D

Single N-channel MOSFET

• Vds=30V• Id=4.0A• Rds(on) = 30mΩ (Vgs=10V)• Rds(on) = 35mΩ (Vgs=4.5V)

Ta=25°C. Unless otherwise noted.

1 3

56

2

4 Pin No. Pin name1 DRAIN2 DRAIN3 GATE4 SOURCE5 DRAIN6 DRAIN

SC-70-6(TOP VIEW)
http://www.elm-tech.com

Rev.1.0

ELM51432A-S

2 / 5

■Electrical characteristics

Parameter Symbol Condition Min. Typ. Max. UnitSTATIC PARAMETERSDrain-source breakdown voltage BVdss Id=250μA, Vgs=0V 30 V

Zero gate voltage drain current Idss Vds=24V, Vgs=0V1

μATa=85°C 30

Gate-body leakage current Igss Vds=0V, Vgs=±20V ±100 nAGate threshold voltage Vgs(th) Vds=Vgs, Id=250μA 1.0 2.0 VOn state drain current Id(on) Vgs=10V, Vds≥4.5V 6 A

Static drain-source on-resistance Rds(on)Vgs=10V, Id=4.0A 20 30

mΩVgs=4.5V, Id=3.5A 25 35

Forward transconductance Gfs Vds=4.5V, Id=2.5A 8 SDiode forward voltage Vsd Is=1.6A, Vgs=0V 0.8 1.2 VMax. body-diode continuous current Is 1.3 ADYNAMIC PARAMETERSInput capacitance Ciss

Vgs=0V, Vds=15V, f=1MHz320 pF

Output capacitance Coss 70 pFReverse transfer capacitance Crss 30 pFSWITCHING PARAMETERSTotal gate charge Qg

Vgs=10V, Vds=15VId≡2.6A

3.0 4.5 nCGate-source charge Qgs 1.6 nCGate-drain charge Qgd 0.6 nCTurn-on delay time td(on)

Vgs=10V, Vds=15V RL=15Ω, Id≡1.0ARgen=6.0Ω

8 12 nsTurn-on rise time tr 12 18 nsTurn-off delay time td(off) 15 30 nsTurn-off fall time tf 8 15 ns

Single N-channel MOSFET

Ta=25°C. Unless otherwise noted.
http://www.elm-tech.com

Rev.1.0

ELM51432A-S

3 / 5

■Typical electrical and thermal characteristics

Single N-channel MOSFET

AFN143230V N-Channel

Alfa-MOSTechnology Enhancement Mode MOSFET

©Alfa-MOS Technology Corp. www.alfa-mos.comRev.A Dec. 2014 Page 3

Typical Characteristics
http://www.elm-tech.com

Rev.1.0

ELM51432A-S

4 / 5

Single N-channel MOSFET

AFN143230V N-Channel

Alfa-MOSTechnology Enhancement Mode MOSFET

©Alfa-MOS Technology Corp. www.alfa-mos.comRev.A Dec. 2014 Page 4

Typical Characteristics
http://www.elm-tech.com

Rev.1.0

ELM51432A-S

5 / 5

Single N-channel MOSFET

■Test circuit and waveform

AFN143230V N-Channel

Alfa-MOSTechnology Enhancement Mode MOSFET

©Alfa-MOS Technology Corp. www.alfa-mos.comRev.A Dec. 2014 Page 5

Typical Characteristics