simulation program with integrated circuit emphasismdker/courses/dic2005/spice.pdf · –simulation...
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1Nanoelectronics and Gigascale Systems Laboratory, NCTU
SPICESimulation Program with Integrated Circuit Emphasis
Sep. 25, 2004
References: [1] CIC SPICE training manual[3] SPICE manual[2] DIC textbook
2Nanoelectronics and Gigascale Systems Laboratory, NCTU
Introduction
• SPICE: – Simulation Program with Integrated Circuit Emphasis– Developed by University of California at Berkeley
• A CAD tools to simulate circuits in steady-state, transient, and frequency domains.
• SBTSPICE, HSPICE, TSPICE, PSIPCE
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HSPICE Simulation Flow
Reference: CIC SPICE training manual
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MOS SPICE Model• LEVEL 1:
– Based on square law– Long-Channel devices
• LEVEL 2:– Velocity saturation– Mobility degradation – Drain-induced barrier lowering (DIBL)
• LEVEL 3:– Semi-empirical model
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MOS SPICE Model (cont.)• BSIM3V3:
– Berkeley Short-Channel IGFET Model– LEVEL 49– Over 200 parameters to model the 2nd-order
effect
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Netlist Structure
Depend on spice model
Circuit structure
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Instance and Element NamesCDE, F, G, HIJKLMQRO, T, UVX
CapacitorDiodeDependent Current and Voltage control sourceCurrent SourceJFET or MESFETMutual InductorInductorMOSFETBJTResistorTransmission LineVoltage SourceSubcircuit Call
Scale Factors
f 1e-15 k 1e3
p 1e-12 meg 1e6
n 1e-9 g 1e9
u 1e-6 T 1e12
m 1e-3
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Device DescriptionR1 A B 1k
C1 C D 1p
M1 D G S B nch l=1u w=3u+AD=3p PD=5u AS=3p PS=5u+ NRS=1 NRD=1
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Subcircuit Description and Recall
• Description (Ex: a inverter).subckt inv in outmp1 out in vdd vdd pch l=1u w=3umn1 out in 0 0 nch l=1u w=1u.ends inv
• Recallx1 a b invx2 c d inv
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DC Analysis TypeDC sweep & DC small signal anysis
.dc sweep for power supply, temp., param…..
.op specify time (s) at which operating point is to be calculated.
.tf calculate DC small-signal transfer function.
.pz performs pole/zero analysis
Example:.dc vin 0 5 0.25
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AC Analysis TypeAC sweep & small signal analysis.ac calculate frequency-domain response.noise noise analysis
Example:.ac dec 10 1k 100meg sweep Rl dec 2 5k 15k
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Transient Analysis Type
.tran calculate time-domain response
.four fourier analysis
.fft fast fourier transform
Example:. tran 1n 100n
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Voltage and Current Source
• PulseVin in 0 pulse (0V 5V 10ns 10ns 10ns 40ns 100ns)
• SinusoidalVin in 0 sin (0V 1V 100Meg 2ns 5e7)
• Piecewise Linear SourceVin in 0 pwl (60n 0V, 120n 0V, 130n 5V, 170n 5V +180n 0V, R 0)
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Input control Statements.data
.tran 1 n 100n sweep data=D1
.data D1 width Length VDD Cap
10u 100u 2V 5p
50u 600u 10V 10p
50u 600u 10V 10p
…..
.enddata
.alter
.del lib “XXX.lib” TT
.lib “XXX.lib” FF
.alter
.temp -50 0 50
Rl 1 2 1k
.param Wval=100u
.end
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Output Format.option list produces an element summary listing of
the data to be printed.
.option node prints a node connection table.
.option acct reports job accounting and run-time statistics at the end of output listing.
.option opts prints the current settings of all control options.
.option nomod suppress the printout of model parameters.
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Output Statement.print print numeric analysis results.probe allows save output variables only into
the graph data files.meas print numeric results of measured
specificationsExample:.print Vdb(vout) V(node) par(‘V(out)/V(in)’).meas tran tprop trig V(in) val=2.5 rise=1 targ V(out) val=2.5 fall=1
xxx.ms# xxx.ma# xxx.mt#
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Simulation step
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AvanWaves (1)
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AvanWaves (2)
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AvanWaves (3)
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AvanWaves (4)
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AvanWaves (5)
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AvanWaves (6)
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Output buffer (inverter)
Supply voltage 2.5 V
Output load 10 pF
Operation frequency 500 MHz
Rise time and fall time < 0.2 nsec
Used the 1.2 µm CMOS process
Design Example
Vin Vout
VDD
CL
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Design Example (cont.)
72
02
0
1.75 10
0.74
656 sec1 2 sec
500
2.2 0.1 0.1 sec2
0.04545 sec
OX
th
f
on L
FC cmV V
cmV
T nMHz
Tt n
R C n
µ
τ
τ
−= ×
=
= −
= =
= = × =
= =
NMOS
34.54454
412.6
2320.5556
27851.2
onDsat
Dsat
nmos
nmos
VDDRI
I mAWLWL
µµ
= ≈
=
⎛ ⎞ =⎜ ⎟⎝ ⎠
⎛ ⎞ =⎜ ⎟⎝ ⎠
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Design Example (cont.)
***** IO *****
.MODEL NMOS NMOS LEVEL=2 LD=0.15U TOX=200.0E-10 VTO=0.74 KP=8.0E-05+ NSUB=5.37E+15 GAMMA=0.54 PHI=0.6 U0=656 UEXP=0.157 UCRIT=31444+ DELTA=2.34 VMAX=55261 XJ=0.25U LAMBDA=0.037 NFS=1E+12 NEFF=1.001+ NSS=1E+11 TPG=1.0 RSH=70.00 PB=0.58+ CGDO=3.4E-10 CGSO=4.3E-10 CJ=0.0003 MJ=0.66 CJSW=8.0E-10 MJSW=0.24
.MODEL PMOS PMOS LEVEL=2 LD=0.15U TOX=200.0E-10 VTO=-0.74 KP=2.70E-05+ NSUB=4.33E+15 GAMMA=0.58 PHI=0.6 U0=262 UEXP=0.324 UCRIT=65720+ DELTA=1.79 VMAX=25694 XJ=0.25U LAMBDA=0.061 NFS=1E+12 NEFF=1.001+ NSS=1E+11 TPG=-1.0 RSH=121 PB=0.64+ CGDO=4.3E-10 CGSO=4.3E-10 CJ=0.0005 MJ=0.51 CJSW=1.35E-10 MJSW=0.24
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Design Example (cont.).temp 25M0 Vout Vin VDD VDD pmos w=94u L=1.2u m=90M1 Vout Vin 0 0 nmos W=94u L=1.2u m=30Cl vout 0 10pF
VDD VDD 0 2.5VVin Vin 0 pulse(0 2.5 1n 0.1n 0.1n 0.9n 2n)
.op
.option post
.tran 1n 30n
.probe V(vout)
.meas tran tr trig V(vout) val=0.25 rise=2 targ V(vout) val=2.25 rise=2.meas tran tf trig V(vout) val=2.25 fall=2 targ V(vout) val=0.25 fall=2.meas tran rms_power RMS power.end
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Design Example (cont.)
Clock feedthrough