simulating front-end electronics and integration with end-to-end simulation
DESCRIPTION
Simulating Front-end Electronics and Integration with End-to-end Simulation. Fukun Tang Enrico Fermi Institute University of Chicago. With Karen Byrum and Gary Drake (ANL) Henry Frisch, Mary Heintz and Harold Sanders (UC). Harold’s TOF System. dum. - PowerPoint PPT PresentationTRANSCRIPT
Pico-Sec Simulation Workshop University of Chicago 12/12/06
Simulating Front-end Simulating Front-end Electronics and Integration Electronics and Integration
with End-to-end Simulationwith End-to-end Simulation
Fukun TangFukun Tang
Enrico Fermi Institute Enrico Fermi Institute University of Chicago University of Chicago
With Karen Byrum and Gary Drake (ANL) Henry Frisch, Mary Heintz and Harold Sanders (UC)
Pico-Sec Simulation Workshop University of Chicago 12/12/06
Harold’s TOF Harold’s TOF SystemSystem
dumdum
Time Stretcher TDC
psFront-end
Start
Stop500pS
Tw
MCP_PMT Output Signal
Reference Clock
“fine” time interval
IBM SiGe BiCMOS 8HP IBM SiGe BiCMOS 8HP ProcessProcess
130-nm Technology130-nm Technology SiGe Hetero-junction Bipolar TransistorsSiGe Hetero-junction Bipolar Transistors
ffTT (high performance): 200GHz, BVceo=1.7V, BVcbo=5.9V (high performance): 200GHz, BVceo=1.7V, BVcbo=5.9V
ffTT (high breakdown): 57GHz, BVceo=3.55V, BVcbo=12V (high breakdown): 57GHz, BVceo=3.55V, BVcbo=12V High-Q Inductors and Metal-Isolator-Metal CapacitorsHigh-Q Inductors and Metal-Isolator-Metal Capacitors 4 Types of Low-tolerance Resistors with Low and High Sheet 4 Types of Low-tolerance Resistors with Low and High Sheet
ResistivityResistivity n+ Diffusion, Tantalum Nitride, p+ Polisilicon and p- Polisiliconn+ Diffusion, Tantalum Nitride, p+ Polisilicon and p- Polisilicon
Electrically Writable e-FuseElectrically Writable e-Fuse CMOS Transistors (VDD=1.2V or 2.5/3.3V)CMOS Transistors (VDD=1.2V or 2.5/3.3V)
Twin-well CMOSTwin-well CMOS Hyperabrupt Junction and MOS VaractorsHyperabrupt Junction and MOS Varactors
Deep Trench and Shallow Trench IsolationsDeep Trench and Shallow Trench Isolations 3 to 5 Copper Layers and 2 Aluminum Layers (up to 3 thick layers)3 to 5 Copper Layers and 2 Aluminum Layers (up to 3 thick layers) Wire-bond or Controlled Collapse Chip Connect (C4) Solder-bump Wire-bond or Controlled Collapse Chip Connect (C4) Solder-bump
TerminalsTerminals
Cadence Custom IC Design Flow for Cadence Custom IC Design Flow for IBM 8HPIBM 8HP
Design SpecificationVirtuoso Schematic
Analog Design Environment (ADE) AMS Design Environment (AMS)
Virtuoso XL Layout Chip Assembly Router
Assura DRC/LVC, RCX
Schematic Capture
Circuit Simulations
Cell/Chip Layout Verification and RF Parasitic Extraction
ADE, AMS Simulations
Post-Layout Simulations Mask Generation
GDSII Stream Out
DRC, Filler Generation
Validation
Tape-Out
IBM 8HP PDK
Library, tech files
Models
Tech File, DRC, PCell
Tech File , DRC
Models, RCX
Tech File
Tech, Foundry Rules
Interface to Other Simulation Interface to Other Simulation ToolsTools
ASCII files: Waveform time-value pair
Tube Output Signals from Simulation
Tube Output Signals from Scope
System Simulation Results
IBM 8HP PDK
Cadence Virtuoso Analog Environment
Or
Cadence Virtuoso AMS Environment
Custom Chip Schematic
Spectre Netlist (Cadence Spice)
ASCII files: Waveform time-value pair
Spectre Netlist
Spectre Library
Cadence Simulator
Waveform Time-value Pair Waveform Time-value Pair FormatFormat
02/2007 MOSIS Submission (2GHz 02/2007 MOSIS Submission (2GHz VCO)VCO)
2GHz VCO Schematics
Simplified VCO Core Schematic•SiGe HJT, negative resistance differential VCO•On-chip high-Q LC tank•High Frequency PN diode Varactors•Capacitor voltage dividers•50-ohm line drivers
VCO Simulation ResultVCO Simulation Result
V-F Transfer Function
Tuning Range=7.5%
Output Waveforms
Phase Noise -97dBc/Hz Equivalents to Cycle-to-cycle time-jitter of 5 fs
Pico-Sec Simulation Workshop University of Chicago 12/12/06
ConclusionConclusion
A journey of 1000 miles begins with a single step. A journey of 1000 miles begins with a single step.
---Lao Tzu (Laozi), 600 B.C.---Lao Tzu (Laozi), 600 B.C.
We entered a completely different world than most of us live in.
We have lots to learn, lots need to be done.