simulácie v polovodičoch
DESCRIPTION
Simulácie v polovodičoch. Peter Ballo Ladislav Harmatha. Kremikova zakladna bunka. Korekčná funkcia v MNDO. Kyslíkový defekt v kremíku. Dvojitý kyslíkový defekt. A centrum H centrum. Oxygen defect in silicon - new MNDO parametrization P.Ballo Department of Physics And - PowerPoint PPT PresentationTRANSCRIPT
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Simulácie v polovodičochSimulácie v polovodičoch
Peter Ballo Ladislav Harmatha
Peter Ballo Ladislav Harmatha
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Kremikova zakladna bunkaKremikova zakladna bunka
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Korekčná funkcia v MNDOKorekčná funkcia v MNDO
1,0 1,5 2,0 2,5 3,0 3,5 4,0-0,05
0,00
0,05
0,10
0,15
0,20
0,25
0,30
En
erg
y (e
V)
Distance (A)
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Kyslíkový defekt v kremíkuKyslíkový defekt v kremíkuMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDEN
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Dvojitý kyslíkový defektDvojitý kyslíkový defekt
A
O
B
C
defaults used first point
MOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDEN A
B
C
O
defaults used first point
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A centrum H centrumA centrum H centrum
B
O
C
A
defaults used first point
MOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDEN
A
B
C
O
defaults used first point
MOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDEN
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Oxygen defect in silicon - new MNDO parametrization
P.BalloDepartment of Physics
And
L.Harmatha
Department of MicroelectronicsFaculty of Electrical Engineering and Information Technology
Slovak University of Technology, Ilkovičova 3, 812 19 BratislavaSlovak Republic
Oxygen defect in silicon - new MNDO parametrization
P.BalloDepartment of Physics
And
L.Harmatha
Department of MicroelectronicsFaculty of Electrical Engineering and Information Technology
Slovak University of Technology, Ilkovičova 3, 812 19 BratislavaSlovak Republic
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Tunelovanie na trojuholnikovej bariereTunelovanie na trojuholnikovej bariere
0 1 2 3 4 50 .0
0 .2
0 .4
0 .6
0 .8
1 .0
T
E ne rgi a E /U 0
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CU charakteristika
MOS s extremne tenkým oxidom
CU charakteristika
MOS s extremne tenkým oxidom
0,0 0,2 0,4 0,6 0,8 1,0
0,00E+000
5,00E-016
1,00E-015
1,50E-015
2,00E-015
Ka
pa
cita
(F
)
Napätie (V)