silicon carbide power devices enabling mobility ... · 5/23/2019 · silicon carbide is a...
TRANSCRIPT
Silicon Carbide Power Devices
Enabling Mobility Electrification
Jean-Marc Chery
President & CEO
STMicroelectronics
STMicroelectronics 2
• ~46,000 employees worldwide
• ~ 7,400 people working in R&D
• 11 manufacturing sites
• Over 80 sales & marketing offices
• Among the world’s largest semiconductor companies
• Serving over 100,000 customers across the globe
• 2018 revenues of $9.66B, with year-on-year growth of 15.8%
• Listed: NYSE, Euronext Paris and Borsa Italiana, Milan
• Signatory of the United Nations Global Compact (UNGC),
Member of the Responsible Business Alliance (RBA)
As of December 31, 2018
Enabling Strategic Electronic Demand Trends 3
Smart
Mobility
Power
& Energy
Internet
of Things
ST provides innovative solutions help
our customers make driving safer,
greener and more connected for
everyone
ST technology and solutions enable
customers to increase energy
efficiency everywhere and support the
use of renewable energy sources
ST provides sensors, embedded
processing solutions, connectivity,
security and power management, as
well tools and ecosystems to make
development fast and easy for our
customers
Electrification Reshaping Avionics Industry 4
Last 60 Years of Avionics Architecture remained unchanged
Constrained by Traditional ICE Engine
Alouette II 1955 Bluecopter 2015
A350 2017A300 1970
Powertrain Electrification Opens
Disruptive Architecture Changes
With significant advantages in terms of
Safety, Reliability and Total Cost of Ownership
Avionic ElectrificationKey Advantages & Industry Challenges
5
Power Energy Conversion Efficiency
is a Must to Enable Electric/Hybrid Aviation
Increasing Emissions Key Advantages
Pollution
Reduction
Consumption
Reduction
Low Cost
Transportation
Goods Deliveries with
Autonomous Helicopters
Battery Size
Up to 2~20 MW
Power Needed
Power Management handling
with Predictive Maintenance
system
Key Challenges
Source: ICAO 2016 Environmental Report
What is a Semiconductor? 6
Conductive Material
Insulated Material
Variable Current
Based on the External Electric Field behaves as:
Open Circuit
Short Circuit
Semiconductor Material
Open Circuit Short Circuit
A
A
A
Exploiting Silicon Characteristics 7
Depending on material type, there’s always a
Breakdown Voltage Threshold beyond which the
material behaves as an Open Circuit
Voltage increase
Breakdown
- - --Doping Process
Si Doping
Voltage
Breakdown
The higher is the Silicon doping, the lower is the Breakdown voltage
Bare Silicon is Doped with other elements
in order to further increase Conductivity Level
What is Silicon Carbide? 8
Doping
Bre
akd
ow
n
SiC
Si
Compared to Silicon, Silicon Carbide shows
intrinsic higher breakdown threshold….
Higher Breakdown Voltage
Increased Doping level
Better Conductiviy
Achieving:
Silicon Carbide shows higher Energy
Conversion Efficiency, allowing Power Devices
to go beyond the limits of Silicon
Silicon & Carbon combination give rise to a
semiconductor with Enhanced Electrical Performances
SiC PMOSFET Advantages in Automotive 9
…Energy conversion always implies
some power losses…
This is the reason we need a
High Efficient Power Semiconductor Device
Faster Energy Commutation Less energy is lost as heat!
SiC PMOSFET better conductivity and faster
switching frequency drastically reduce power lossesElectric Engine heart is the Traction Inverter that
convert the Energy stored into the Battery pack in
Electric Motor Actuation
SiC PMOSFET Energy Conversion Higher Efficiency
increase heavily the overall Electric Vehicle
Mileage!!!
SiC PMOSFET Traction Inverter
Application SavingIndependent Analyst Estimation
10
Source: Goldman Sachs, Nov 2018
+300$
Sic Additional Cost
~2000$
Estimated Saving
-50%
Power Losses
-20%System Cost
Saving
Battery Cost: up to 600$
EV-Space: up to 600$
Cooling: up to 1000$
Main Saving Contributors
Footprint: up to 70%
Weight: up to 80%
Installation Cost: 50% cut
x5Switching
Frequency
Electric Vehicle
Main Saving Contributors Solar Inverter
…100% adoption in 10 years
…and 50% Charging time
reduction
SiC PMOSFET Manufacturing Process 11
Raw Material
Atomic Sublimation
Reactor, 2700°
Physical Vapor
Transportation
SiC Seed
SiC Ingot Ingot Cutting &
Substrate Polishing
SiC
Substrate
Epitaxy Growth
Oven
Wafer Processing
SiC Product
SiC
IngotMultiple production
steps
SiC Substrate
Silicon Carbide PMOSFETManufacturing Challenges vs Silicon Process
12
SiC has higher intrinsic material defectiveness that
propagates during substrate manufacturing…
…leading to a more complex manufactuing flow to grant
quality and reliability
Annealing
(Vs. 800° Si)
>1700°CIon Implantation
(Vs. 25° Si)
500°C
Harder Etching Phase
(similar to diamond)
More accurate Photolithography to
define dopant shape
Silicon Carbide is a “Harder” Material and requires a
more sophisticated manufacturing process at certain
key diffusion Steps
wafer
mask
Phisical Defects Mapping
at Wafer level
Electrical Testing to verify
Mapped Defectiveness Area
Defect
SiC Ingot Manufacturing Sawing Process
SiC
Carrot
Si C
Sic Seed
Sublimation
SiC Wafer Testing
Seed Defectiveness
propagation
R&D and Manufacturing close synergy to materialize SiC material advantages…
Takeaways
• SiC is an outstanding material to meet the needs of energy
saving in multiple market domains
• SiC PMOSFET gives great benefits in terms of performance and
cost, every time high power energy conversion is needed
• SiC is a difficult material to master in order to reap all the benefits
coming from its intrinsic properties
• ST has the know how, the partnerships, the commitment and
the right intimacy between R&D and Manufacturing to master
SiC PMOSFET technology
13