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© 2010 Confidential & Proprietary 1 Silicon-Based GaN High-Power LED Sonny Wu Chairman & CEO © 2010 Confidential & Proprietary July 14, 2010

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Page 1: Silicon-Based GaN High-Power LED - latticepower.comSemicon_West_Invited_Talk).pdfSilicon-Based GaN High-Power LED ... • Dominates LED business Sapphire • Mature technology

© 2010 Confidential & Proprietary 1

Silicon-Based GaNHigh-Power LED

Sonny WuChairman & CEO

© 2010 Confidential & Proprietary

July 14, 2010

Page 2: Silicon-Based GaN High-Power LED - latticepower.comSemicon_West_Invited_Talk).pdfSilicon-Based GaN High-Power LED ... • Dominates LED business Sapphire • Mature technology

© 2010 Confidential & Proprietary 2

LatticePower Vision

• World’s only GaN/Si-based LED production company

• Disruptive silicon technology

– Managing the challenges in GaN/Si

– Scaling to 6-inch wafers and larger to drive down costs

– Leveraging low-cost semiconductor IC standard tools for manufacturing

• Vertically integrated for scale and lighting solutions

Page 3: Silicon-Based GaN High-Power LED - latticepower.comSemicon_West_Invited_Talk).pdfSilicon-Based GaN High-Power LED ... • Dominates LED business Sapphire • Mature technology

© 2010 Confidential & Proprietary 3

Carrier substrate

TS: Transparent Substrate

TF: Thin Film

Solving GaN-on-Silicon Challenge

• Mature technology

• High material quality

• Dominates LED business

Sapphire

• Mature technology

• High material quality

SIC

• Easy to go to 6–12 inch

• Less expensive

• Easy substrate lift-off for thin film (TF) process

• Can take advantage of low-cost IC manufacturing

• Substrate lift-off is difficult

• More difficult to go to 6–12 inch

• Expensive• More difficult to go

to 6–12 inch

• Lower material quality• Tensile strain can cause

film cracking

Silicon

Challenges

Page 4: Silicon-Based GaN High-Power LED - latticepower.comSemicon_West_Invited_Talk).pdfSilicon-Based GaN High-Power LED ... • Dominates LED business Sapphire • Mature technology

© 2010 Confidential & Proprietary 4

100um100um

Managing the Stress in GaN/Si

• Lattice constant mismatch• Thermal expansion

mismatch• High tensile strain• Cracking everywhere

• Pre-patterned substrate• Proprietary multiple-layer

buffer design• <5E18 dislocation density• High material quality

Page 5: Silicon-Based GaN High-Power LED - latticepower.comSemicon_West_Invited_Talk).pdfSilicon-Based GaN High-Power LED ... • Dominates LED business Sapphire • Mature technology

© 2010 Confidential & Proprietary 5

Wet etch removal of (111) Si substrate

Sufficient n-GaNthickness

Multiple QWdesign

Optimizing epi and Device

• High-quality thick n-GaN layer to minimize defects

• Multiple QW design to maximize internal quantum efficiency

• High-efficiency epi

• Thin film structure with proprietary process to maximize the light extraction

• High-performance device

After epi growth, GaN LEDstructure on (111) Si substrate

carriercarrier

P-contact reflector metal and bonding metal deposition and wafer bonding

N-side ohmic contact and top surface roughening

Page 6: Silicon-Based GaN High-Power LED - latticepower.comSemicon_West_Invited_Talk).pdfSilicon-Based GaN High-Power LED ... • Dominates LED business Sapphire • Mature technology

© 2010 Confidential & Proprietary 6

Performance of 1mm Chip

0

100

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0 200 400 600 800

DC Drive Current (mA)

Ligh

t out

put (

mW

)

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Light output (mW)

Vf (V)

Achieving High Performance

• >50% EQE at operating current, on par with sapphire-based LEDs

• Low operation voltage of 3.1–3.4V

• 110 lm at 350mA white (5000K CCT, 65 CRI)

EQE Curve of 1x1mm Chip

Typical Operation current

0.01 0.1 1 10 100

J/A*cm-2

0%

10%

20%

30%

40%

50%

60%

70%

80%

EQ

E

0%

10%

20%

30%

40%

50%

60%

70%

80%

EQ

E

Typical Operation Current

White LED-based on GaN on Silicon110 lm at 350mA

0

50

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0 200 400 600 800Current (mA)

Whi

te li

ght i

nten

sity

(lm

)

Page 7: Silicon-Based GaN High-Power LED - latticepower.comSemicon_West_Invited_Talk).pdfSilicon-Based GaN High-Power LED ... • Dominates LED business Sapphire • Mature technology

© 2010 Confidential & Proprietary 7

Proving Reliability and Manufacturability

• Highly stressed lifetest at 3x normal operating current and 110–120 junction temperature

• Reliability similar to LEDs made on sapphire

• Silicon-based LED manufacturing process control; yield similar to sapphire-based LEDs

Page 8: Silicon-Based GaN High-Power LED - latticepower.comSemicon_West_Invited_Talk).pdfSilicon-Based GaN High-Power LED ... • Dominates LED business Sapphire • Mature technology

© 2010 Confidential & Proprietary 8

LatticePower’s LED Light Bulb

Specifications

Product name Snowcone

Voltage (V) 110 VAC

Power consumption 7W +/−10%

Power factor 0.95

Luminous flux (lm) 700 lm (neutral white), 480 lm (warm white)

Efficacy 92 lm/W (neutral white), 66 lm/W (warm white)

Color temperature 5000k +/−10% (neutral), 3000k +/−10% (warm white)

CRI 67 (neutral white), 80 (warm white)

Lifetime 40,000 hr

Weight & dimension 170g, 60mm x 122mm

Price $8 @ minimum 1 million order

Page 9: Silicon-Based GaN High-Power LED - latticepower.comSemicon_West_Invited_Talk).pdfSilicon-Based GaN High-Power LED ... • Dominates LED business Sapphire • Mature technology

© 2010 Confidential & Proprietary 9

LatticePower’s Ambition

Haitz’s Law

Timeline Today 2012 2015

Efficacy 100 lm/W 120 lm/W 150+ lm/W

Cost Base −50% −80%

6-inch-diameter and larger silicon wafer technology :Impact of falling cost on Haitz’s law

6″ wafer� �

8″ wafer

Page 10: Silicon-Based GaN High-Power LED - latticepower.comSemicon_West_Invited_Talk).pdfSilicon-Based GaN High-Power LED ... • Dominates LED business Sapphire • Mature technology

© 2010 Confidential & Proprietary 10

LED Light Bulb Adoption

Key Factors for Lower Cost

• Silicon-based LED chips

• High-efficiency LED driver

• Scale and low-cost manufacturing capability

7W LED 10W LED

Timeline Today 2012 2015

Efficacy 70 lm/W 90 lm/W 120 lm/W

7W/45W ASP $30 $8 $4

10W/60W ASP – $12 $6

Si wafer size 50mm/2″ 150mm/6″ 200mm/8″

Page 11: Silicon-Based GaN High-Power LED - latticepower.comSemicon_West_Invited_Talk).pdfSilicon-Based GaN High-Power LED ... • Dominates LED business Sapphire • Mature technology

© 2010 Confidential & Proprietary 11

Contributors:Bo Lu, Jiang Fengyi, Wangli, Wang Xiaolan, Zhou Yinghua, Tang Yingwen, Liu Junlin, Yan Zhanbiao, Chen Haiying, Zheng Changda, Xiong Chuanbing, Mo Chunlan, and Sonny Wu.

Acknowledgements

Page 12: Silicon-Based GaN High-Power LED - latticepower.comSemicon_West_Invited_Talk).pdfSilicon-Based GaN High-Power LED ... • Dominates LED business Sapphire • Mature technology

© 2010 Confidential & Proprietary 12

Thank You!

LatticePower ( 晶能光电晶能光电晶能光电晶能光电)

www.latticepower.com

Contact: [email protected]