si-strip sts: layout
DESCRIPTION
Si-strip STS: Layout. Valeri Saveliev, Obninsk State University 7-10-2001. CBM Collaboration Meeting. New Geometry of the Si-Strip STS 4 Si-Strip Planes inside the Magnet ( equivalent distances along z ). Significant Reducing the Requirements for the Si-Strip STS Design - PowerPoint PPT PresentationTRANSCRIPT
Valeri Saveliev, Obninsk State University7-10-2001
CBM Collaboration Meeting
Si-strip STS: Layout
Valeri Saveliev2CBM Collaboration Meeting 2004, 7.10.2004
New Si-Strip STS Geometry New Si-Strip STS Geometry
40 cm
60 cm
80 cm
100 cm
x
y
z
STS_4
STS_5
STS_6
STS_7 New Geometry of the Si-Strip STS
4 Si-Strip Planes inside the Magnet( equivalent distances along z )
Significant Reducing the Requirements for the Si-Strip STS Design ( STS_3 is MAPS technology )
Valeri Saveliev3CBM Collaboration Meeting 2004, 7.10.2004
Si-strip STS Geometry Si-strip STS Geometry
Geant 4 view of Si-Strip STS Geometry
Main factors taking to account for Si-Strip STS Layout :
Occupancy Resolutions for x & y Fake rate production
Valeri Saveliev4CBM Collaboration Meeting 2004, 7.10.2004
Occupancy of Si-Strip STS Occupancy of Si-Strip STS
Total Occupancy of Si-Strip STSSTS_4, STS_5, STS_6, STS_7(Total Number of Points on the Planes )
100 Au+Au 25 GeV/A events
STS_4 STS_5 STS_6 STS_7
Valeri Saveliev5CBM Collaboration Meeting 2004, 7.10.2004
Occupancy of Si-Strip STS Occupancy of Si-Strip STS
Occupancy of Si-Strip STSSTS_4, STS_5, STS_6, STS_7( 1 cm of Central Parts along X in Modules )
100 Au+Au 25 GeV/A events
Valeri Saveliev6CBM Collaboration Meeting 2004, 7.10.2004
Resolution of Si-Strip STS Resolution of Si-Strip STS
450 150900_y = const ( 8 mkm )
_x
y
X
Keep the Point Resolution on the Level: 50 mkm
Valeri Saveliev7CBM Collaboration Meeting 2004, 7.10.2004
Fake Rate of Si-Strip STS Fake Rate of Si-Strip STS
Fake Rate
Valeri Saveliev8CBM Collaboration Meeting 2004, 7.10.2004
Basic Technology of Si-strip STS Basic Technology of Si-strip STS
Double Sided Si-Strip DetectorsThickness : 100 mkmPitch of strips : 25 mkmStereo Angle : 15o
Inner region of Si-Strip STS:25 mkm Pitch gives 400 strips per cmAccording the occupancy plots for STS_4: 10 Point per cm per event, or 2.5 % for 1 cm length strip17 Point per cm per event, or 4.2% for 2 cm length of strip
Valeri Saveliev9CBM Collaboration Meeting 2004, 7.10.2004
Basic Technology of Si-strip STS Basic Technology of Si-strip STS
Outer region of the Si-Strip STS:Long Lader Technology ( SiLC Collaboration)
Sensors are 4’’ , 300 µ thick, double-sided,70 × 40.1 mm2, 110 µ/208µ readout pitch (p: junction side/n: ohmic side).
A set of strips are connected in serpentine; thus strips with following length: 28 cm, 56 cm, 112 cm and 224 cm are tested.
Valeri Saveliev10CBM Collaboration Meeting 2004, 7.10.2004
Si strip STS_4 Layout Si strip STS_4 Layout
Basic Elements: Inner : 6x2 cm Middle : 6x4 cmOuter : 6X12 cm
-20 cm
+20 cm
Read out
Valeri Saveliev11CBM Collaboration Meeting 2004, 7.10.2004
Si strip STS_6 Layout Si strip STS_6 Layout
Basic Elements: Inner : 6x4 cm Middle : 6x12 cmOuter : 6X20 cm
+40 cm
-40 cm
Read out
+4cm
- 4cm
Valeri Saveliev12CBM Collaboration Meeting 2004, 7.10.2004
Plans Plans
Implementation in to MC: New Geometry Layout of the Si-Strip STS Definition of the Hits Structure
Test with the Reconstruction