session 15: measuring substrate-independent · 2016. 9. 4. · the solution: accounting for...
TRANSCRIPT
![Page 1: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/1.jpg)
Page 1
Session 15: Measuring Substrate-Independent
Young’s Modulus of Thin Films
Jennifer Hay
Factory Application Engineer
Nano-Scale Sciences Division
Agilent Technologies
To view previous sessions: https://agilenteseminar.webex.com/agilenteseminar/onstage/g.php?p=117&t=m
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What’s the problem?
Page 2
• Low-k film (440
nm) on silicon
• Berkovich indenter
• CSM (1nm, 75 Hz)
• Oliver-Pharr
analysis
?
![Page 3: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/3.jpg)
The solution: accounting for substrate influence
Page 3
• Low-k film (440
nm) on silicon
• Berkovich indenter
• CSM (1nm, 75 Hz)
• Oliver-Pharr
analysis PLUS
thin-film analysis
Hay, J.L. and Crawford, B., "Measuring Substrate-Independent Modulus
of Thin Films," Journal of Materials Research 26(6), 2011.
“It was fun to read.” – Prof. Gang Feng, Villanova University
![Page 4: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/4.jpg)
Page 4
Both film and substrate influence measured
response
Development of strain field during nano-indentation of a film-substrate system, from Modelling
Simul. Mater. Sci. Eng. 12 (2004) 69–78. (Authors: Yo-Han Yoo, Woong Lee and Hyunho Shin)
![Page 5: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/5.jpg)
Page 5
Review of efforts to solve this problem
• (1986) Doerner and Nix: Analytic model assuming linear
transition from to substrate and including an empirically
determined constant.
• (1989) King: Form of Doerner-Nix model with no adjustable
parameters.
• (1989) Shield and Bogy: Analytic model, but with physical
problems.
• (1992) Gao, Chiu, and Lee: Simple approximate model.
• (1997) Mencik: Practical refinements to the Gao model.
• (1999-2006) Song, Pharr, and colleagues: Alternate version
of Gao’s approximate model.
![Page 6: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/6.jpg)
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The Song-Pharr model with Gao’s weight function
a
t film, mf
substrate, ms
mmm fsa
II11
)1(1
00
m ≡ shear modulus; E = 2m(1+n)
![Page 7: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/7.jpg)
Modeling the relationship between two springs
Springs (of differing stiffness) in series,
subject to a force:
• The deformation in each spring is
DIFFERENT. The more compliant spring
deforms more.
• The MORE COMPLIANT spring dominates
the response.
Page 7
Springs (of differing stiffness) in parallel,
subject to a force:
• The springs undergo the SAME
deformation.
• The STIFFER spring dominates the
response
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How to account for lateral support of the film?
Page 8
When film is stiff:
• Deformation in the top
layer of the substrate
approaches that of the film.
• Film dominates the
response.
clearly
series
Parallel
?
![Page 9: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/9.jpg)
Allow film to act both in series and parallel (Hay & Crawford, 2011)
Page 9
film
Indentation force
substrate
film
substrate film
Indentation force
previous form new form
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But previous advancements are retained
• Gao’s weight functions, I0 & I1 for gradually shifting influence
of each spring with indentation depth.
• Mencik’s suggestion that t = t0 – hc.
• Definition of effective Poisson’s ratio suggested by Song and
Pharr.
Page 10
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A new model for elastic film-substrate response
Page 11
film
substrate film
Applied indentation force
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A new model for elastic film-substrate response
Page 12
mf : shear modulus, film
ms : shear modulus, substrate
F : empirical constant;
F = 0.0626
a : contact radius
t : film thickness
D : relates stiffness to
modulus; D=4a/(1-na)
I0 : Gao’s weighting function;
as a/t → 0, I0 → 1;
as a/t → ∞, I0 → 0
force
![Page 13: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/13.jpg)
Hay & Crawford, 2011
Solving for film modulus: mf = f(ma, mf, t0, a, hc, F)
Page 13
Sneddon, 1965, as implemented by
Oliver and Pharr, 1992
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Hay & Crawford, 2011
Solving for film modulus: mf = f(ma, mf, t0, a, hc, F)
Page 14
Hay & Crawford, 2011
Sneddon, 1965, as implemented by
Oliver and Pharr, 1992
![Page 15: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/15.jpg)
Hay & Crawford, 2011
Solving for film modulus: mf = f(ma, mf, t0, a, hc, F)
Page 15
Hay & Crawford, 2011
Sneddon, 1965, as implemented by
Oliver and Pharr, 1992
![Page 16: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/16.jpg)
Hay & Crawford, 2011
Solving for film modulus: mf = f(ma, mf, t0, a, hc, F)
Page 16
Hay & Crawford, 2011
Gao, et al., 1992
Sneddon, 1965, as implemented by
Oliver and Pharr, 1992
![Page 17: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/17.jpg)
Hay & Crawford, 2011
Solving for film modulus: mf = f(ma, mf, t0, a, hc, F)
Page 17
Hay & Crawford, 2011
Gao, et al., 1992
Sneddon, 1965, as implemented by
Oliver and Pharr, 1992
![Page 18: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/18.jpg)
Hay & Crawford, 2011
Solving for film modulus: mf = f(ma, mf, t0, a, hc, F)
Page 18
Hay & Crawford, 2011
Gao, et al., 1992
Sneddon, 1965, as implemented by
Oliver and Pharr, 1992
Song & Pharr, 1999
![Page 19: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/19.jpg)
Hay & Crawford, 2011
Solving for film modulus: mf = f(ma, mf, t0, a, hc, F)
Page 19
Hay & Crawford, 2011
Gao, et al., 1992
Sneddon, 1965, as implemented by
Oliver and Pharr, 1992
Song & Pharr, 1999
![Page 20: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/20.jpg)
Hay & Crawford, 2011
Solving for film modulus: mf = f(ma, mf, t0, a, hc, F)
Page 20
Hay & Crawford, 2011
Gao, et al., 1992
Sneddon, 1965, as implemented by
Oliver and Pharr, 1992
Song & Pharr, 1999
![Page 21: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/21.jpg)
Hay & Crawford, 2011
Solving for film modulus: mf = f(ma, mf, t0, a, hc, F)
Page 21
Hay & Crawford, 2011
Gao, et al., 1992
Sneddon, 1965, as implemented by
Oliver and Pharr, 1992
Song & Pharr, 1999
Gao, et al., 1992
![Page 22: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/22.jpg)
Hay & Crawford, 2011
Solving for film modulus: mf = f(ma, mf, t0, a, hc, F)
Page 22
Hay & Crawford, 2011
Gao, et al., 1992
Menčίk et al., 1997
Sneddon, 1965, as implemented by
Oliver and Pharr, 1992
Song & Pharr, 1999
Gao, et al., 1992
![Page 23: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/23.jpg)
Hay & Crawford, 2011
Solving for film modulus: mf = f(ma, mf, t0, a, hc, F)
Page 23
Hay & Crawford, 2011
Gao, et al., 1992
Menčίk et al., 1997
Sneddon, 1965, as implemented by
Oliver and Pharr, 1992
Song & Pharr, 1999
Gao, et al., 1992
![Page 24: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/24.jpg)
The value of finite-element simulations
Page 24
t Ef-in
70.3o
0
0.05
0.1
0.15
0.2
0 50 100 150 Lo
ad
on
Sam
ple
/mN
Displacement/nm
Eout Analytic
model
![Page 25: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/25.jpg)
The value of finite-element simulations
Page 25
t Ef-in
70.3o
0
0.05
0.1
0.15
0.2
0 50 100 150 Lo
ad
on
Sam
ple
/mN
Displacement/nm
Eout
≡Eapparent
Sneddon
![Page 26: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/26.jpg)
The value of finite-element simulations
Page 26
t Ef-in
70.3o
0
0.05
0.1
0.15
0.2
0 50 100 150 Lo
ad
on
Sam
ple
/mN
Displacement/nm
Eout
≡Efilm
Sneddon &
Hay-Crawford
![Page 27: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/27.jpg)
Page 27
Summary of 70 finite-element simulations (2D)
.
Simulation Es, GPa Maximum indenter displacement (h), nm
1-10 100 20 40 60 80 100 120 140 160 166 174
11-20 50 20 40 60 80 100 120 140 160 166 184
21-30 20 20 40 60 80 100 120 140 160 180 200
31-40 10 20 40 60 80 100 120 140 160 180 200
41-50 5 20 40 60 80 100 120 140 160 180 200
51-60 2 20 40 60 80 100 120 140 160 180 200
61-70 1 20 40 60 80 100 120 140 160 180 200
500 nm Ef = 10GPa
70.3o
![Page 28: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/28.jpg)
Page 28
Summary of 70 finite-element simulations (2D)
.
Simulation Es, GPa Maximum indenter displacement (h), nm
1-10 100 20 40 60 80 100 120 140 160 166 174
11-20 50 20 40 60 80 100 120 140 160 166 184
21-30 20 20 40 60 80 100 120 140 160 180 200
31-40 10 20 40 60 80 100 120 140 160 180 200
41-50 5 20 40 60 80 100 120 140 160 180 200
51-60 2 20 40 60 80 100 120 140 160 180 200
61-70 1 20 40 60 80 100 120 140 160 180 200
500 nm Ef = 10GPa
70.3o
![Page 29: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/29.jpg)
Is everything OK with simulations?
Page 29
0
2
4
6
8
10
12
14
16
18
20
0 10 20 30 40
Yo
un
g's
Mo
du
lus
[G
Pa
]
Indenter Penetration / Film Thickness [%]
Ef=Es, apparent
input film modulus for all simulations
![Page 30: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/30.jpg)
Is everything OK with simulations?
Page 30
0
2
4
6
8
10
12
14
16
18
20
0 10 20 30 40
Yo
un
g's
Mo
du
lus
[G
Pa
]
Indenter Penetration / Film Thickness [%]
Ef=Es, apparent
Ef=Es, film alone
input film modulus for all simulations
![Page 31: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/31.jpg)
Page 31
Summary of 70 finite-element simulations (2D)
.
Simulation Es, GPa Maximum indenter displacement (h), nm
1-10 100 20 40 60 80 100 120 140 160 166 174
11-20 50 20 40 60 80 100 120 140 160 166 184
21-30 20 20 40 60 80 100 120 140 160 180 200
31-40 10 20 40 60 80 100 120 140 160 180 200
41-50 5 20 40 60 80 100 120 140 160 180 200
51-60 2 20 40 60 80 100 120 140 160 180 200
61-70 1 20 40 60 80 100 120 140 160 180 200
500 nm Ef = 10GPa
70.3o
![Page 32: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/32.jpg)
Page 32
Simulations: Compliant film on stiff substrate
.
0
2
4
6
8
10
12
14
16
18
20
0 10 20 30 40
Yo
un
g's
Mo
du
lus
[G
Pa
]
Indenter Penetration / Film Thickness [%]
Ef/Es = 0.1, apparent
input film modulus for all simulations
![Page 33: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/33.jpg)
Page 33
Simulations: Compliant film on stiff substrate
.
0
2
4
6
8
10
12
14
16
18
20
0 10 20 30 40
Yo
un
g's
Mo
du
lus
[G
Pa
]
Indenter Penetration / Film Thickness [%]
Ef/Es = 0.1, apparent
Ef/Es = 0.1, film alone
input film modulus for all simulations
![Page 34: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/34.jpg)
Page 34
Simulations: Compliant film on stiff substrate
.
0
2
4
6
8
10
12
14
16
18
20
0 10 20 30 40
Yo
un
g's
Mo
du
lus
[G
Pa
]
Indenter Penetration / Film Thickness [%]
Ef/Es = 0.1, apparent
Ef/Es = 0.1, Film (Hay)
Ef/Es = 0.1, Film (Song-Pharr)
input film modulus for all simulations
![Page 35: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/35.jpg)
Page 35
Summary of 70 finite-element simulations (2D)
.
Simulation Es, GPa Maximum indenter displacement (h), nm
1-10 100 20 40 60 80 100 120 140 160 166 174
11-20 50 20 40 60 80 100 120 140 160 166 184
21-30 20 20 40 60 80 100 120 140 160 180 200
31-40 10 20 40 60 80 100 120 140 160 180 200
41-50 5 20 40 60 80 100 120 140 160 180 200
51-60 2 20 40 60 80 100 120 140 160 180 200
61-70 1 20 40 60 80 100 120 140 160 180 200
500 nm Ef = 10GPa
70.3o
![Page 36: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/36.jpg)
Page 36
Simulations: Stiff film on compliant substrate
.
0
2
4
6
8
10
12
14
16
18
20
0 10 20 30 40
Yo
un
g's
Mo
du
lus
[G
Pa
]
Indenter Penetration / Film Thickness [%]
Ef/Es = 10, apparent
input film modulus for all simulations
![Page 37: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/37.jpg)
Page 37
Simulations: Stiff film on compliant substrate
.
0
2
4
6
8
10
12
14
16
18
20
0 10 20 30 40
Yo
un
g's
Mo
du
lus
[G
Pa
]
Indenter Penetration / Film Thickness [%]
Ef/Es = 10, apparent
Ef/Es = 10, Film (Hay)
input film modulus for all simulations
![Page 38: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/38.jpg)
Page 38
Simulations: Stiff film on compliant substrate
.
0
2
4
6
8
10
12
14
16
18
20
0 10 20 30 40
Yo
un
g's
Mo
du
lus
[G
Pa
]
Indenter Penetration / Film Thickness [%]
Ef/Es = 10, apparent
Ef/Es = 10, Film (Hay)
Ef/Es = 10, Film (Song-Pharr)
input film modulus for all simulations
![Page 39: Session 15: Measuring Substrate-Independent · 2016. 9. 4. · The solution: accounting for substrate influence Page 3 •Low-k film (440 nm) on silicon •Berkovich indenter •CSM](https://reader035.vdocuments.site/reader035/viewer/2022071015/5fce7a43e07ecb3f5e6ef95f/html5/thumbnails/39.jpg)
Page 39
Determining the value of F (fudge factor)
. Ef-out (P, h)
Ef = 2mf(1-nf)
Ef-in
0
/
:
70
1
2
dF
EEEd
Fi
infinfoutf i
F was determined as that value which minimized the sum of
the squared relative differences (between output and input
film moduli) over all 70 simulations.
F = 0.0626
sim
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Hay & Crawford, 2011
Solving for film modulus: mf = f(ma, mf, t0, a, hc, F)
Page 40
Hay & Crawford, 2011
Gao, et al., 1992
Menčίk et al., 1997
Sneddon, 1965, as implemented by
Oliver and Pharr, 1992
Song & Pharr, 1999
Gao, et al., 1992
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NanoSuite integration in CSM “thin film” methods
Page 41
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NanoSuite integration in ET “thin film” methods
Page 42
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Page 43
Application: SiC on Si wafers
Sample ID Description t
nm
16 Silicon carbide (SiC) on Si 150
17 Silicon carbide (SiC) on Si 300
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Experimental method
Page 44
• Materials:
o A set of 2 SiC films on Si
• Platform: Agilent G200 NanoIndenter with
o DCM head
o CSM option
o Berkovich indenter
o New test method: “G-Series DCM CSM Hardness,
Modulus for Thin Films.msm”
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Stiff films on compliant substrates: SiC on Si
Page 45
0
50
100
150
200
250
300
350
400
0 10 20 30 40 50
Yo
un
g's
Mo
du
lus
[G
Pa]
Indenter Penetration / Film Thickness [%]
t=150nm, apparent
citation of results
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Stiff films on compliant substrates: SiC on Si
Page 46
0
50
100
150
200
250
300
350
400
0 10 20 30 40 50
Yo
un
g's
Mo
du
lus
[G
Pa]
Indenter Penetration / Film Thickness [%]
t=150nm, apparent
t=150nm, film
citation of results
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Stiff films on compliant substrates: SiC on Si
Page 47
0
50
100
150
200
250
300
350
400
0 10 20 30 40 50
Yo
un
g's
Mo
du
lus
[G
Pa]
Indenter Penetration / Film Thickness [%]
t=150nm, apparent
t=150nm, film
t=300nm, apparent
citation of results
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Stiff films on compliant substrates: SiC on Si
Page 48
0
50
100
150
200
250
300
350
400
0 10 20 30 40 50
Yo
un
g's
Mo
du
lus
[G
Pa]
Indenter Penetration / Film Thickness [%]
t=150nm, apparent
t=150nm, film
t=300nm, apparent
t=300nm, film
citation of results
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SiC on Si: Modulus at h/t = 20%
Page 49
0
50
100
150
200
250
300
350
400
SiC on Si (t=150nm) SiC on Si (t=300nm)
Yo
un
g's
mo
du
lus
, h
/t=
20
%
[GP
a]
Sample
Film
Apparent
Film modulus is about 25% higher than apparent modulus!
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Page 50
t0 = 445 nm t0 = 1007 nm
“Rapid Mechanical Characterization of low-k Films,”
http://cp.literature.agilent.com/litweb/pdf/5991-0694EN.pdf
Application: low-k materials (on silicon)
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Experimental method
Page 51
• Materials:
o Two low-k films on Si
• Platform: Agilent G200 NanoIndenter with
o DCM head
o CSM option
o Express Test option
o Berkovich indenter
• Test Methods:
o G-Series DCM CSM Hardness, Modulus for Thin
Films
o Express Test for Thin Films
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Modulus of low-k film (t = 1mm) is 4.44±0.08GPa
Page 52
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Hardness of low-k film (t = 1mm) is 0.70±0.02GPa
Page 53
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Application: Ultra-thin films
Page 54
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Four samples
Page 55
Substrate: sintered Al2O3 and TiC
Basecoat: sputter-deposited Al2O3
(2600nm)
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Four samples
Page 56
Substrate: sintered Al2O3 and TiC
Basecoat: sputter-deposited Al2O3
(2600nm)
PECVD SiO2 (50nm) OR ALD Al2O3 (50nm)
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Page 57
• Agilent G200 with DCM II head and NanoVision
• Express Test
• Berkovich indenter
• Thin-film model applied to both basecoat and top layers.
Experimental method
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Substrate – independent
modulus of 50nm films
Page 58
E = 146 GPa
Application note: http://cp.literature.agilent.com/litweb/pdf/5991-4077EN.pdf
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In summary, the proposed model…
Page 59
• Has been verified by simulation and experiment.
• Is an improvement over prior models, because it works
well whether the film is more compliant or more stiff
than the substrate.
• Decreases experimental uncertainty by allowing
measurements to be made at larger depths which would
otherwise be unduly affected by substrate influence.
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Application: Mechanical characterization of SAC
305 Solder by Instrumented Indentation Wednesday, May 14, 2014, 11:00 (New York)
Page 60
Abstract The reliability of soldered connections in electronic packaging depends on
mechanical integrity; mechanical failure can cause electrical failure. Mechanical
integrity, in turn, depends on mechanical properties. In this presentation, we focus
on the SAC 305 solder alloy (96.5% tin, 3% silver, and 0.5% copper) due to its
prevalent utilization in electronic packaging. First, we demonstrate the use of
nanoindentation to measure the elastic and creep properties of SAC 305. Next, we
utilize an advanced form of nanoindentation to quantitatively map mechanical
properties of all the components of a realistic SAC 305 solder joint.
To register:
https://agilenteseminar.webex.com/agilenteseminar/onstage/g.php?p=117&t=m
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Session 16: Best Practice for Instrumented
Indentation Wednesday, June 11, 2014, 11:00 (New York)
Page 61
Abstract The purpose of this presentation is to provide a practical reference guide for
instrumented indentation testing. Emphasis is placed on the better-developed
measurement techniques and the procedures and calibrations required to obtain
accurate and meaningful measurements.
Recommended Reading Hay J.L. and Pharr G.M., “Instrumented Indentation Testing,” ASM Handbook:
Mechanical Testing and Evaluation, Volume 8, pp. 232-243 (2000).
To register: https://agilenteseminar.webex.com/agilenteseminar/onstage/g.php?p=117&t=m
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Thank you!
Page 62
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Two (sort of) independent problems
Page 63
• Composite compliance: Substrate influences the
stiffness that is measured.
• Errant contact area: Common model for
determining contact area is strained in its
application to thin films.
These two problems are easily convoluted,
because they both tend to push the calculated
Young’s modulus in the same direction.