sensors and actuators - nthu pme micro device labatory
TRANSCRIPT
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MDL
NTHU
Sensors and Actuators
方維倫 教授
Micro Device Lab (MDL)
國立清華大學 動力機械工程學系
http://mdl.pme.nthu.edu.tw
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MDL
NTHU
Sensors
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• Transfer the mechanical behavior (such as deformation, stress, and
acceleration) to electrical signal
• Static method : stress/strain and deformation/displacement
• Dynamic method : resonant frequency
• Sensing techniques can be characterized as static and dynamic approaches
+ stress/strain detection - piezoresistive strain gauges piezoelectric sensing
+ deformation/displacement detection - capacitance interferometer
+ resonant frequency
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Stress detection - piezoresistive strain gauge
• Piezoresistivity - a material property where the bulk resistivity, r, is
influenced by the mechanical stresses applied to the material
• Strain gauge - a conductor or semiconductor that is fabricated on
or bonded directly to the surface to be measured and that changes in
dimension along with the surface
• The gauge resistance varies proportional with the change in gauge
dimension by two factors,
+ deformation of the shape of the gauge
+ piezoresistivity effect
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• The strain gauge can also be used to measure the vibration frequency of
a structures
+ the stress status of a structure ( at a certain face) can vary from tension to
compression during vibration, for example, a cantilever beam
• The sensitivity is expressed by the Gauge factor, GF ( eGF = dR/R )
GF = (1+ 2m) + (dr/r)/e
Poisson's ratio residual strain
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• Micromachined strain gauge has two advantages
+ Easy to define the pattern of the gauge + High GF - traditional conductor strain
gauge the GF mainly determined by m,
however, the GF is dominated by (dr/r)
for a semiconductor strain gauge
p-type silicon
n-type silicon
metal 1 ~ 5
up to 200
down to -140
Material GF
E.O. Doebelin, Measurement Systems, 1990
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Stress detection - piezoelectric sensing
• Piezoelectricity - the phenomenon in which an electrical voltage develops
due to an externally applied stress
• Silicon is not a piezoelectric material, therefore an additional piezoelectric
film has to be deposited onto the substrate when applying this technique
• Piezoelectric materials are very sensitive sensors since a very small
displacements will cause large detectable voltages, the reverse argument
shows that they are poor actuator materials
• An opposite effect is also true - the piezoelectric material will deform
under an input voltage, therefore it can also be a material for actuator
• ZnO is the most common piezoelectric material used in microfabrication
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Deformation detection - capacitance
• The basic parallel plate capacitor equation is
C = eA/d
d
A
distance between two plates
overlapping plate area
dielectric constant
• There are several ways to sense the deformation by the
changing of capacitance, for example
c1
c2 c1 c2
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Why microsensors?
• The primary advantages of the microsensor is the reducing of its size
+ lower weight (greater portability)
+ lower manufacturing cost (less material)
+ sensitivity
+ power consumption
Semiconductor Sensors, edited by S.M. Sze, 1994.
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• Micromachining processes - batch fabrication, and IC processes compatible
+ lower cost (batch processes)
+ integration of the electrical and mechanical parts (less material)
+ performance (distributed sensor)
Honeywell
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Accelerometer
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• Accelerometer is applied in diverse areas, including deploying air bags,
monitoring machinery, etc.
• The basic components of an accelerometer are a proof mass m, a spring k,
and a damper c
k
m
c
object
accelerometer
y
xz = x-y
0)()( yxkyxcxm
ymkzzczm
Basic concept
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• The real structure associated with the physical model
km
E, I, L Air gap, c
+ K : 3EI/L3, beam stiffness
+ c: damping, comes from both
structure and air effect
k
m
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km
E, I, L/2 Air gap, c
+ K : 48EI/L3, beam stiffness
+ c: damping, comes from both
structure and air effect
k
k
m
k
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Conventional accelerometer
• Piezoelectric accelerometer
Measurement Systems 4th ed., E.O. Doebelin, 1990
Figure Courtesy: B & K Instruments, Marlboro, Mass., USA
S: spring
M: mass
P: piezo
B: base
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• Capacitive accelerometer
Measurement Systems 4th ed., E.O. Doebelin, 1990
Figure Courtesy: B & K Instruments, Marlboro, Mass., USA
Conventional accelerometer
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L.M. Roylance and J.B. Angell, IEEE Transaction on ED, 1979.
Bulk micromachined accelerometer
+ Modern product
P.W. Barth, Sensors and Actuators, 1990
+ Early product
• Piezoresistive type
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• Piezoelectric type
ZnO, piezoelectric
material
P.-L. Chen, et al., IEEE on ED, 1982.
ZnO
+ Part of the fabrication processes
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• Capacitive type
T. Sasayama, et al., Transducers '95, 1995.
+ Part of the fabrication processes
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• Frequency type
resonator
T.V. Roszhart, et al., Transducers '95, 1995.
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Surface micromachined accelerometer
• In - plane detection
Figure source: L. O'Connor, Mechanical Engineering, 1992.
mass, mspring, k
fixed
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+ Due to the fabrication characteristic, the capacitive type sensing technique is
more common for surface micromachined accelerometer
sensing
element
anchor to the substrate
before accelerated
after accelerated
mass
spring
Figure source : Catalog for ADXL50 accelerometer, Analog Device Co.
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• Out - of - plane detection
spring
mass
B.E. Boser, Monolithic surface-micromachined inertial sensor, 1995.
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Pressure sensor
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• Pressure sensor can be applied to detect (1) tire and oil pressure in
automobile, and (2) blood pressure in human body, etc.
• Pressure sensor contains a deformable plate. The pressure is determined by
the deformation of the plate
Basic concept
P0
P1
P1
P0
P1
Micromachined plate
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Conventional pressure transducer
• Elastic transducer
Measurement Systems 4th ed., E.O. Doebelin, 1990
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Bulk micromachined pressure sensor
Micromachined plate
• Piezoresistive type
Piezoresistive
sensing element
J. Bryzek, et. al., Spectrum, 1994
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• Capacitive type
H.-L. Chau and K.D. Wise, IEEE Transactions on ED, 1988.
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Bulk/Surface micromachined pressure transducer
• Good example to show the integration of the surface and the bulk
micromachining
• Resonant type : The stiffness of the resonator varies with the pressure -
the natural frequency of the resonator will change with the pressure
surface micromachined
resonator
C.J. Welham, J.W. Gardner, and J. Greenwood, Transducer '95, 1995
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• Fabrication processes
C.J. Welham, J.W. Gardner, and J. Greenwood, Transducer '95, 1995.
surface micromachined
resonator
Bulk silicon etching
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• Capacitive type
Bulk silicon etching
surface micromachined
membrane (poly-Si)
J.T. Kung and H.-S. Lee, J. of MEMS, 1992.
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+ deformation of the plate measured through external optical system
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doped (phosphorus)
layer) for bottom
electrode
• Fabrication processes
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Thermal sensors
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• Thermal sensors : sensors that measure physical quantities by
+ physical properties to thermal quantities
+ thermal quantities to electrical quantities
• In general, a thermal sensor operates in 2~3 steps
1. Non-thermal signal to a heat flow
2. Heat flow to a temperature difference
3. Temperature difference to an electrical signal
• Applications of thermal sensors
+ flow sensors (steps 1~3)
+ infrared radiation sensors (steps 2~3)
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• Better thermal isolation
• Small mass results in short response time
• Small mass results in higher sensitivity
• Distributed sensor through fabrication
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IR imager
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• Thermal flow sensors are the most common flow sensor
• The basic concept for thermal flow sensor is the cooling of a hot
object by the flow
Thermal Flow Sensors
Q = rAvCDT
Q = heat dissipated into the fluid
r = density of the fluid
A = cross-sectional area of the flow
v = flow velocity
C = specific heat
• Better thermal isolation
• Small mass results in short response time
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• Two most common structures for thermal flow sensors
• The basic components of the thermal flow sensor contains one heater
and two thermal sensors
L. Qiu, E. Obermeier, and A. Schubert, Transducer '95, 1995
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• Temperature distribution near the heater and thermal sensor when flow
velocity is 0.0 m/sec and 2.0 m/sec
v = 2.0 m/s
• The flow velocity is determined by the difference of the downstream
and upstream temperature
L. Qiu, E. Obermeier, and A. Schubert, Transducer '95, 1995
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heater
cavity for thermal isolation
• Two typical micromachined thermal flow sensor
fluid flow
thermal
sensorheater
fluid flow
F. Mayer, O. paul, and H. Baltes, Transducer '95, 1995
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• Resonant bridge flow sensors
+ The resonant frequency of the resonating
microbridge will shift
+ The sensor contains a resonant bridge which
is driven at a temperature elevation of 20°C
+ The bridge may be contaminated by particles
within a real fluid - the resonant frequency
will be shifted by this effect
S. Bowstra, et. al., Sensors and Actuators, 1990
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Actuators
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• Actuators : Engine of the MOEMS, Moving parts
Sandia National Lab.
Actuator
(Engine)
Transmission
Passive
components
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• In a more general way, "actuator" is named as an output transducer that
initiate some action (S. Middelhoek, Silicon Sensors, 1989)
• Actuators can be characterized as out-of-plane (bulk micromachining)
and in-plane (surface micromachining) motion
• Our discussion here will focus on the actuators to transfer the electrical
signal to mechanical deformation
• Application of the micromachined actuators can be mechanical
switch, scanning mirror, motors, positioner, microvalve, etc.
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Application - TI DMD
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Classify The Motion of the Micro Actuator
• In-plane motion
W.C. Tang, T.-C.H. Nguyen, and R.T. Howe, 1989.L-.S. Fan, Y.-C. Tai, and R. S. Muller, 1989.
Angular Linear
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• Out-of-plane motion
Angular Linear
V. M. Bright, 1998S.-W. Chung et. al., 1996
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• Due to the fabrication characteristics, the bulk micromachined
structures have more space to move out-of-plane
• Motion of the cantilever can be initiated through the following approaches,
+ thermal
+ piezoelectric
+ shape alloy
+ magnetoresistive
+ electrostatic
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+ Four different approaches to actuated the micromachined cantilever
Magnetic
type
Piezoelectric
typeThernal (bilayer)
type
Shape alloy
type
E. Quandt and H. Holleck, Microsystem Technologies, 1995
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In-Plane Electrostatic Actuators
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V
-
+
-Q
+Q
x x
y
Constant area, A
• Energy
• Electrostatic force
U = CV2/2
Fx = -dU/dx
where C = eA/x
)(2
12
2
x
AVFgap
e
Gap closing electrodes
Fg
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Comb electrodes
V
-
+
-Q
+Q
Constant
gap, d
x
y
Fc
y
L
• Electrostatic force
U = CV2/2
Fy = -
dU/dy
where C = eyz/d
)(2
1 2
d
zVFcomb
e
• Energy
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Comb-drive actuator
drive probe
sense probe
moving parts supporting frames
bond to the substrate
stationary electrode
W.C. Tang, et. al., Sensors and Actuators, 1990.
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Mass
Spring
Spring
Electrostatic force, Fc
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Comb
electrode
Moving stage
Spring
J. Hsieh, and W. Fang, the ASME IMECE, New York, NY, 2001
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UC Berkeley
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NTHU
Sandia National Lab.
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MDL
NTHU
UC Berkeley
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NTHU
C.-J. Kim, A.P. Pisano, and R.S. Muller, J. of MEMS, 1992.
Microgripper
• Microgripper is fabricated by both surface and bulk micromachining
microgripper
euglena
+ after standard IC packaging
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MDL
NTHU
Comb
electrode
Moving
platform
J. Hsieh, and W. Fang, the SPIE Micromach. and Microfab.,
San Francisco, CA, 2001
Micro motor (comb)
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NTHU
• The motor is driven by several stators which are at its side
statorhub
rotor
air gap
J.H. Lang, Integrated Micro-motion Systems edited by F. Harashima, 1989.
Micro motor
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MDL
NTHU
SDA (Scratch Drive actuator)
SDA(scratch drive actuator)之設計
靜電式驅動 : 30~150V
單位行程 : 10nm
出力大小 : 100μN
矽基材
支撐樑
平板
突塊
絕緣層
△x
L2
L1
T.Akiyama, K. Shono
Sophia University, MEMS’93
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NTHU
θ V
V
+ -
+ -
V
V
+ -
+ -
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NTHU
SDA 驅動測試
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MDL
NTHU
C.-Y. Wu, and W. Fang, 2002
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MDL
NTHU
Out-of-Plane Electrostatic Actuators
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MDL
NTHU
Mechanical switch
• Mechanical switch
+ micromachined switch proposed by Petersen at 1979 is an application of the
electrostatic force linear actuator
K.E. Petersen, IBM J. of Research and Development, 1979.
electrode 1
(evaporated Au-Cr)
electrode 2 (p+ doped layer)
+ the actuator - fabrication processes are shown in chap. 3
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MDL
NTHU
Torsional scanning mirror
• Torsional mirror can rotate about the torsional bar by the electrostatic force
K.E. Petersen, IBM J. of Research and Development, 1980.
After bonding
SEM photo of the
top substratef
Electrode
Ridge
Torsional bar
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• Torsional actuator : out-of-plane angular motion
D. Chauvel et. al., 1997S.-W. Chung et. al., 1996
gap
+ Surface device + Bulk device
L
Design issues
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• Electrostatic force
2
2
02
1
x
VAFel e
)( xdkFme
V
A, e0
k
x = d
x
electrostatic force :
spring force :
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NTHU
• The general problems of the existing Micro Electrostatic Torsional Actuator (META)
+ Limitation of the rotating angle as well as the plate size (for surface device)
+ The demand of the large driving voltage (for bulk device)
+ Pull-in effect
Surface device Bulk device
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NTHU
Typical operating q -V curve
B -- C Pull-inC -- D Hysteresis
0 5 10 15 20 25 30 35
Voltage (V)
-5
-4
-3
-2
-1
0
Angle
q(d
eg)
attractingA
B
C
releasing
0
D
q d0AB
C , D
+ Pull-in effect
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NTHU
META with extending cavity
d
L
da
qa
extending cavity
V
plate
To overcome the size limitation of META
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• conventional ~
gap decrease drastically
gap
• proposed ~
gap decrease smoothly
gap
Curved electrode
To improve the electrostatic property of META
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NTHU
Fabrication processes
Integrating and surface process and front-side bulk etching
(d)
(e)
Define cavity and lower electrode
Pattern sacrificial layer
Pattern structural layer
Releasing structure and etching Si
(c)
(a)
(b)
(f)
Pattern top electrode (option)and then remove sacrificial layer
extending cavity
Deposit protection/isolation layer
Fabrication processes and results
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NTHU
J. Hsieh and W. Fang, Sensors and Actuators A, 2000
J. Hsieh and W. Fang, Transducers99, 1999
extending cavity
curved electrode
uncurved mirror plate
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MDL
NTHU
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MDL
NTHU
META with extending cavity(Al as plate material)
flat plate surface
large gap extending cavity
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(a) (b)
(c) (d)
Fabricating result upon different top electrode thickness(a) 0 (b) 0.1mm (c) 0.19mm (d) 0.3mm
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MDL
NTHU
• EDLA Engine (Electrostatically-Driven-Leverage Actuator ) :
Out-of-plane Gap-closing Electrostatic Actuator
Output
electrode
pivot
lever
H.-Y. Lin, H. Hu, and W. Fang, Transducers’01, Munich Germany, 2001
Gap-closing Lever Actuator
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NTHU
600 mm
lever-mechanism
H.-Y. Lin and W. Fang, IEEE Optical MEMS 2000, 2000
gap-closing
electrode
stiffened mirror with reinforced frame
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MDL
NTHU
H.-Y Lin and W. Fang, ASME IMECE 2000, 2000
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MDL
NTHU
+ Laser light scanning
Before scan After scan at 17.7 KHz
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NTHU
+-
V
Side view
Vertical comb
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NTHU
Comb
electrode
Comb
electrode
J. Hsieh, C.-C. Chu, M.-L. Tsai, and W. Fang, IEEE Optical MEMS’02, 2002
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MDL
NTHU
J. Hsieh, C.-C. Chu, M.-L. Tsai, and W. Fang, IEEE Optical MEMS’02, 2002
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MDL
NTHU
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NTHU
J. A. Yeh et. al , University of Comell , 1999
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MDL
NTHU
R. A. Conant et. al , UC Berkeley , 2000
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MDL
NTHU
In-Plane Thermal Actuators
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NTHU
•220μm長,2μm厚• 2.94V, 3.86mA
輸出力4.4μN
• 最大變形量16μm
• 8μm at 300 Hz
• 1.75μm at 1 KHz
Hot-cold arm thermal actuator
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MDL
NTHU
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NTHU
• 單熱臂
• 入射光延原方向反射
• 3.5 mrad tolerance
• Au 膜
• 4.5μm plate thickness
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NTHU
• 單熱臂
• 主微致動器驅動轉子
• 副微致動器頂住驅動齒
桿
• 背向彎曲的應用
- 7.5 V, 5 sec
• 驅動電壓 3.7 V
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MDL
NTHU
Out-of--Plane Thermal Actuators
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NTHU
θ
L
ρw
t2, E2
t1, E1
12
2
1
6
13
ssr
m
nnkmhE
4223 6441 nmmnmnmnk
mE
E
1
2 nt
t
1
2
21 tth
Bimorph thermal actuator
where
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MDL
NTHU
Bimorph thermal actuator
W. Riethmuller and W. Benecke, IEEE Trans. on ED, 1988.
Layer 1 (Au)Heater
(polysilicon)
Layer 2 (p+ silicon)
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MDL
NTHU
• 採單一結構層,增加元件壽命• 具有雙向致動的能力• 使用粗細相同的樑,可改善致
動器性能及提高製程良率
Single layer thermal actuator
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MDL
NTHU
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NTHU
Moving upward
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MDL
NTHU
Moving downward
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NTHU
Applying voltage:0~7V
Beam length:240 mmBeam width:10 mm
Static drive
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MDL
NTHU
Vappl: 6.5V Vappl: 6.7V Vappl: 6.85V
• Temperature distribution
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NTHU
Dynamic drive
Applying voltage:5V
Driving freq : 0~200 Hz
Beam length:240 mmBeam width:10 mm
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1000 10000 100000
-40
-35
-30
-25
-20
-15
-10
-5
Response (
dB
)
Frequency (Hz)
1.75kHz32.9kHz
Frequency response
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NTHU
Reliability test
Vappl: 2.25V Driving freq: 32.9kHz
105
106
107
108
109
30
31
32
33
34
35
resonant fr
equency (
kH
z)
number of cycles
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NTHU
Thermal actuator
Mirror
Application - 1D scanner
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MDL
NTHU
Thermal actuator
Mirror
Application - 2D scanner