seminar silicon photonics presentation
TRANSCRIPT
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ARAVIND SURESH(Roll no:09)
S7A EC
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OVERVIEW Introduction
Optoelectronics at present WDM
AWG and WDM
Siliconize photonic
Stimulated Raman Amplification
The Raman effect Laser
Silicon laser
Modulator
Coding of optical data
Photodetector
Interface
The silicon challenges
Applications
Futurescope & Conclusion
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SILICON PHOTONICS
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INTRODUCTION Moores Law(1962)
Presently 1.7billion transistors
More transistors more information can process
Copper wires are used to communicate betweenperipheral
devices
Wires close to each other can induce currents in one
another
Increased resistance=increased heat =decay of data Microscopic imperfection, Skin effect, Proxmity effect
Data speed > 10Gbps not achieved
Replace copper with optical fiber and electron withphoton
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OPTOELECTRONICS AT PRESENT
A single fiber strand can now carry up to 14Tbps
Send pulses of light instead ofpulses of electron current in guided
medium
Fibre Optics immune to attenuation-
repeaters atover100 Kms
Pack dozens of channels by separating channel by wave length-WDM
Wave length division multiplexing
Use lasers to shoot light pulses through glass fibers
Need of coherent light
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WDM
The wavelength division multiplexing
Multiplexing upto 160 channels
Bandwidth in the range : 1260-1675 nm
Single Mode Fibre core diameter only- 9 micrometer Channel separation as low as 0.8 nm
Most commonly used is: C-band transmission window
: 1530-1565 nm
Uses AWG (de)multiplexer
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AWG and WDM
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SILICON PHOTONICS
Array of waveguides with constant length increment
Diffraction and Interferenceplay the role
Advantages-low loss,low cost,ease of network
upgrading
Precision Temperature control: +/-2 Degree C
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SILICONIZE PHOTONICS Means all components are integrated on the silicon chip
To siliconizephotonic
A integrated light source Device that split, route and direct light on silicon chip
Modulator to encode data into optical signal
Photo detector to convert the optical signal back to
electrical bits Low cost high volume assembly methods
Supporting electronic for intelligence and photonic
control
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MILESTONES
All-Silicon Laser-
Silicon is an indirectbandgap material
Need an external source for initial light Problem ofmisalignmentof external laser
Raman effect 10,000 times stronger in silicon.
STIMULATED RAMAN SCATTERING (SRS) AMPLIFICATION
Intel disclosed development of first continuous wave all-siliconlaser(2005)
SILICON PHOTONICS
To be continued
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SRS
Stimulated Raman Scattering
SILICON PHOTONICS
Pump Laser-500 mW,980nm
Weak Data beam-1550nm(C-band)
Data beam energy passed to molecular vibration Pumpphoton absorption
High energyphoton emission and wavelength shift
Scattering reduced in C-band
Advantage
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The Raman effect LASER
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Silicon laser
Need wave guide for light beam
Twophotons absorption
Silicon to absorb pump beams photon and release free electrons
Electron cloud reduce amplification
P-I-N diode in silicon laser
Dielectric mirrors in silicon laser
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Silicon laser
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Modulator
` Modulation switching one state to another state(on and off)
` Two types of modulation
Direct modulation
-direct switching of source(on-off)-limit 10Gbps~12km
External modulation-used for 10Gbps~100km+
` Each time laser turn on it chirps-un desired shift in
wavelength-data distortion
` Use external modulator chirp free-use lithium nobate-strong electro opticeffect
` External Phase modulation of light without disturbing source
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Modulation
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Encoding optical data(ASK-digital modulation)
Split the laser into two
Apply electric field to one beam
Speed changes and out ofphase
When recombine- result cancel out
No electric field apply -No speed variation and
samephase When recombine beam encoded with 1s and 0s
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SILICON PHOTONICS
The MachZehnder interferometer
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MILESTONEScontinued
SILICON PHOTONICS
Silicon Modulator in GHz range
Early injection current modulator- diode switching
Free carrierplasma dispertion effect.
Difficulty to extract carriers out of the path..
20MHz limit for silicon modulator-a limit for silicon photonics
Intel demonstrated the first GHz silicon modulator(2005)
Speed upto 10 Gbps demonstrated with transistor like device to inject as well as
pull out carriers
Speed upto 18Gbps demonstrated with optical ring modulator
Disclosed the development of 40Gbps silicon modulator
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Photo detector/Demodulation
Collect the photons and convert into electrical signal
Semiconductor diode detectors-the frontrunners
-The PIN diode detector
-The Avalanche Photodiode detector
InGaAs-least bandgap
Avalanche detectors with built in amplification due to intense
electric field
Noise, dark current and photocurrent fluctuations
Response time-0.5ns typical
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Demodulation & Detection
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INTERFACE
SILICON PHOTONICS
The construct-Silicon on insulator
Connecting an optic fibre
Silicon chip-optic fibre interconnection
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SILICON CHALLENGES
SILICON PHOTONICS
`
Kerr Nonlinearity effectRefractive index variesproportional to square of electric field
intensity
` Four wave mixing
Three waves scatter at a point to produce fourth wavelength
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APPLICATIONS
Integrating into a Tera-scale system
Shrinking electronic/medical equipments
3D ICs
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SILICON PHOTONICS
Anartistic view
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FUTURESCOPE & CONCLUSION
Intel moving on steps towards 50Gbps optical link
Optical Revolution in:-
ELECTRONICS AND COMMUNICATION ENGINEEERING
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REFERENCES
www.ieeexplore.ieee.org-
Lipson, M.; Optical Fiber communication/National Fiber Optic Engineers
Conference, 2008.;PublicationYear: 2008 , Page(s): 1 - 3
techresearch.intel.com
domino.research.ibm.com
en.wikipedia.org
Ebook on Silicon Photonics Mario Paniccia(Intel Director, Photonics Lab)
Fibre Optic Communication Harold Kolimbiris,Scenior
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