semiconductor nanowire manipulation using iptoelectronic tweezers arsh jamshidi, peter j....
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SEMICONDUCTOR NANOWIRE MANIPULATION USING
IPTOELECTRONIC TWEEZERS
Arsh Jamshidi, Peter J. Pauzauskie, Aaron T. Ohta , Pei-Yu Chiou, Peidong Ya
ng and Ming C, Wu
University of Caligormia, Berkeley,USA
IEEE MEMS2007
報告人 :蘇聖欽
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Outline Motivation Theoretical Background
Optical Tweezers Optoelectronic tweezers Theory Optoelectronic tweezers Force Device Structure
Experimental Results Experimental Setup Manipulation of Silicon Nanowires Speed and Trapping Radius Measurements Nanowires Assembly
Conclusion
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Motivation
The ability of optical tweezers to perform parallel assembly is hampered by their high optical power density (107w/cm2) and small area (approximately 1 um*1 um) .
Dielectrophoresis can trap nanowires ,but he trapping sites are fixed the electrode pattern .
OET is capable of manipulating a large number of microparticles or cells over a large area .
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Outline Motivation Theoretical Background
Optical Tweezers Optoelectronic tweezers Theory Optoelectronic tweezers Force Device Structure
Experimental Results Experimental Setup Manipulation of Silicon Nanowires Speed and Trapping Radius Measurements Nanowire Assembly
Conclusion
![Page 5: SEMICONDUCTOR NANOWIRE MANIPULATION USING IPTOELECTRONIC TWEEZERS Arsh Jamshidi, Peter J. Pauzauskie, Aaron T. Ohta, Pei-Yu Chiou, Peidong Yang and Ming](https://reader030.vdocuments.site/reader030/viewer/2022032521/56649d5c5503460f94a3b0a9/html5/thumbnails/5.jpg)
Optical Tweezers Mie regime(米氏定理 ) :
適用的粒子大小 diameter of particle >> 。 動量守恆原理。
Rayleigh regime(雷利定理 ) : 適用的粒子大小 diameter of particle << 。 電磁波理論,變動的電場使粒子極化,產生引力。
electric field
particle
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Optoelectronic tweezers Theory
They use AC voltage producing electric field .
Arsh Jamshidi,2007
OET
Mechanical
Optical Tweezers Dielectrophoresis
Optical Electrical
Electric field
OET device
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Optoelectronic tweezers Force
Optoelectronic tweezers force under an AC bias is given by:
Drag force:
)(Re)6/( 22 EKlrF mDEP
)1)ln(2/(8 lrlvFDrag
η:viscous
V:nanowires velocity
Re(K):depolarization factor
l:nanowirws length
r:nanowires radius
Arsh Jamshidi,2007
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Device Structure
OET device apparatus : a top indium-tin–oxide (ITO) electrode a 1–um-thick layer of photoconductive material (amorph
ous silicon) An applied AC bias of 20
Vpp at 50kHz
Arsh Jamshidi,2007
15um ITO
Liquid
1um amorphous silicon
20Vpp
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Outline Motivation Theoretical Background
Optical Tweezers Optoelectronic tweezers Theory Optoelectronic tweezers Force Device Structure
Experimental Results Experimental Setup Manipulation of Silicon Nanowires Speed and Trapping Radius Measurements Nanowire Assembly
Conclusion
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Experimental Setup
4mW HeNe Laser
Attenuator
40x
OET Device
mirror
Motorizesed stage
20x
CCD Camera
Equipment :
-A 632nm HeNe laser -A 40X objective lens-Solution of DI water and KCl-Olympus BX51M microscopy using a CCD camera
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Manipulation of Silicon Nanowires
The long-axis of the nanowires (CdS) aligned with the electric field in the liquid layer .
Si nanowires experienced an attractive force towards the illuminated area after turning on the laser .
Arsh Jamshidi,2007
r:100nm
l:1-5um
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Speed and Trapping Radius Measurements
Si nanowires with 390Ω-cm magnitudes comparable to the experimental results .
Figure shows the measured maximum speed of the nanowires versus the applied AC voltage .
Arsh Jamshidi,2007
Max speed:
135um/s
Max radius:
120um
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Separation of two nanowires
Nanowires within a trapping radius can still be trapped individually by controlling the scanning speed of the laser spot .
Arsh Jamshidi,2007
r:100nm
l:1-5um
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Nanowire Assembly
A spherical lens is used to create a line laser pattern for movement of Si nanowires in arrays of 2 or 3 .
Arsh Jamshidi,2007
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Conclusion The flexibility of the optoelectronic tweezers devic
e, low required optical power intensity (optical tweezers power 107w/cm2, OET power 100w/cm2) .
Large working area makes OET a very attractive tool for the manipulation for nanowires (arrays of 2 or 3) .
A maximum velocity of 135um/s and a trapping rad
ius of 122um are achieved using this method .
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Reference
[1] Arsh Jamshidi, Peter J. Pauzauskie, Aaron T. Ohta , Pei-Yu Chiou, Peidong Yang and Ming C, Wu, “SEMICONDUCTOR NANOWIRE MANIPULATION USING IPTOELECTRONIC TWEEZERS ”, IEEE MEMS,pp155-158(2007).
[2]Aaron T. Ohta, Pei Yu Chiou, and Min C. Wu, ”Dynamic DMD-Driven Optoelectronic Tweezers for Microscopic Particle Manipulation”, University of California,Los Angeles(2004).
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The End