see testing using laser irradiation with ... · pdf fileseu sel 2013 cy62256 sram. sel...

SEE Testing Using Laser Irradiation With Different Characteristics

O.Mavritskiy, A.Egorov, A.Chumakov, A.Yanenko,

A.Pechenkin, D.Savchenkov, A.Petrov

National Research Nuclear University

“MEPhI”http://www.mephi.ru

Specialized Electronic Systemshttp://www.spels.ru

E-mail: [email protected]

31 Kashirskoe shosse, 115409 Moscow, Russian Federation, tel./fax: +7 (495) 324-0420

Contents

• Main parameters of SPELS pulse laser facilities

• Experimental technique

• SEE testing results, obtained on different facilities for SRAM CY62256, compared to heavy ion testing results

• SEE testing results for SY55852UKC – high speed flip-flop CML logic IC

• National standardization of laser SEE testing

2013


• Experimental technique




2013

Laser facilities common layout

femto-* or picosecond laser+OPG**

Attenuation unit

Focusing unit(microscope)

Visualization unit (VIS/NIR*** cameras)

Control unit(PC)

Testing unit DUT

XYZ Micro positioner

* - FEMTO-T; ** - PICO-4; *** - PICO-3;

2013

SPELS laser facilities

Type PICO-3 PICO-4 FEMTO-T

Wavelength, m 1.064/0.532 (0.7…1.0) / (1.15 ... 2.20) 0.87

Pulse duration, ps 70 25 0.1 … 2

Pulse energy, J 7.8/3.0 20 20

Spot diameter, m2.2/1.2

TEM00

32

TEM00

Repetition rate, Hz 0* … 1000 0* … 1000 0* … 100

* - single pulse mode

2013

2013

λ = 870 nm λ = 900 nm λ = 1000 nm

PICO-4 beam profiles for different wavelengths

Z = 1 mm (distance from focus plane)


• Experimental techniques




2013

Experimental techniquesLaser SEE testing

Local laser irradiation technique

Focused laser irradiation technique

Heavy ion testing

1. Localization of sensitive area

2. Determination of laser threshold energy

3. Ionization response registration

4. Estimation of LET5. Estimation of cross

section

SEE cross section vs. laser energy

SEE cross section vs. LET(minimum 2 points)

Rate prediction

LET Kl. Jl

DUT: Cypress CY62256 high-performance

CMOS static RAM

DUT test circuit diagram

2013

SEU and SEL maps

2 nJ

1 nJ

0.5 nJ

0.4 nJ

Ionization response map

(OBIC)

Any wavelength from

0,85 …1, 06 µm range

CY62256 SRAM

The most sensitive regions

SELSEU

2013

CY62256 SRAM

SEL threshold energy vs. spot diameter dependency

= 1.0 µm. Region 4 (in the bank)

RPP approximation

line with sensitive

region dimensions

as fitting parameters

1

10

100

1000

1 10 100

Jth

, n

J

D, µm

J0

Facility type PICO-3 PICO-4

Wavelength, µm 1,06 1,00 0,90 0,85

Side of irradiation Back Front Front Front Front

Threshold energy J0, nJ 0.7 5.0 1.50 0.45 0.31

Size of sensitive area, µm2 5.0 × 21 5.0 × 22 2.6 × 30 4.3 × 19 4.3 × 20

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2013

Facility type PICO-3 PICO-4

Wavelength, µm 1,06 1,06 1,00 0,90 0,85

Side of irradiation Back Front Front Front Front

LET, MeV·cm2/mg 60 80 30 35 35

Facility type PICO-3 PICO-4 FEMTO-T

Wavelength, µm 1,06 1,00 0,90 0,85 0,87

Side of irradiation Back Front Front Front Front Front

LET, MeV·cm2/mg 150 ! 30 24 20 23

SEL LET estimation for CY62256NLL

SEU LET estimation for CY62256NLL

Focused laser testing SEU and SEL results

1,0E-06

1,0E-05

1,0E-04

1,0E-03

1,0E-02

1,0E-01

1,0E+00

0 1 2 3 4 5 6 7 8 9 10

σ, cm

2

J, nJ

SEU SEL

SEL and SEU cross-section vs. laser energy for CY62256NLLlaser facility FEMTO-T (λ = 0.870 µm)

2013

Ion testing

IonAngle of

incidence

Energy,

MeV

Effective LET,

MeV×cm2/mg

22Ne 0° 70 6

22Ne 60° 70 14

40Ar 0° 130 16

40Ar 60° 130 33

84Kr 0° 300 41

136Xe 0° 390 69

U-400M isochronous cyclotron of FlerovNuclear Reaction

Laboratory of Joint Institute for Nuclear

Research, Dubna, Russia

Heavy ion testing

Focused laser and heavy ion testing SEU and SEL results

SEU and SEL cross-section vs. LET for CY62256NLL.Laser facility FEMTO-T (λ = 0.870 µm); heavy ion facility U-400M

2013

1,0E-06

1,0E-05

1,0E-04

1,0E-03

1,0E-02

1,0E-01

1,0E+00

0 10 20 30 40 50 60 70 80 90

σ, c

m2

LET, MeV·cm2/mg

SEU (ion testing) SEU (laser testing)SEL (ion testing) SEL (laser testing)






2013

sensitive to SEU point

SEU in high speed flip-flop CML logic IC SY55852

Frontside scanning using FEMTO-T (870 nm, 200 fs)

1

10

100

1000

1 10 100

E th, n

J

D, µm

SEU threshold Eth vs. beam diameter dependence for 200 fs laser pulses

Facility FEMTO-T PICO-4

Pulse duration 70 fs … 1.5 ps 20 ps

Wavelength 870 nm 870 nm

SEU resultSame SEU threshold

(≈1,5 nJ)No SEU ! up to 15 nJ

(damage energy)

(Minimum output rise time 35 ps)

Conclusions

2013

National Research Nuclear University “MEPhI” Specialized Electronic Systems

31 Kashirskoe shosse, 115409 Moscow, Russian Federation, e-mail: [email protected], fax: +7 (495) 324-0420

Testing the same SRAM on three laser facilities showed:

• Within the same facility: SEL and SEU – correlate!

• On different facilities: SEU parameters – differ by several times:

Influence of spot size effect (beam quality & spot size are of a great importance!)

Various optical losses for different wavelengths

Influence of IC elements’ dynamic characteristics

• Focused laser testing satisfactory correlates with heavy-ion testing

mailto:[email protected]






2013

2013

National Research Nuclear University “MEPhI” Specialized Electronic Systems

31 Kashirskoe shosse, 115409 Moscow, Russian Federation, e-mail: [email protected], fax: +7 (495) 324-0420

National standardization of laser SEE testing

Industry standard: Laser technique. Method 1000.9. OST 11.073.013-03. Part 10

Guidance documents:Laser technique for SEU estimation RD 319.03.24Laser technique for SEL estimation RD 319.03.58

Technical guide: Combined laser focused and ion beam technique. TM-4

mailto:[email protected]

Thank you very much for your attention!

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