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Name: Page 1 of 9 Sample Problems and Solutions Problem The source follower of figure must achieve a voltage gain of 0.85 and an output impedance of 100 . Assuming µ n C ox = 100 µA/V 2 , V TH,n = 0.4V, V DD =1.8V, λ n =0.1V 1 design the circuit:

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Sample Problems and Solutions Problem The source follower of figure must achieve a voltage gain of 0.85 and an output impedance of 100 Ω. Assuming µnCox = 100 µA/V2, VTH,n= 0.4V, VDD=1.8V, λn=0.1V−1 design the circuit:

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Problem The parameters of the transistors in Fig. 1 are VTn=+0.8, VTp=−0.8V, (1/2)µncox=50µA/V2, and λn=λp=0.02 V−1. The width-to-length ratios are shown in the figure. The value of VGSQ is such that ID1=100µA, and M1 and M2 are biased in the saturation region. Find the small-signal voltage gain Av=vo/vi Transistors M2, M3, and M4 implement a current source IBIAS with internal resistance RBIAS. [Hint: RBIAS = ro2 + ro3 ⋅ (1 + gm2 ⋅ ro2)]

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Problem Design the MOS differential pair of figure for a voltage gain of 5 and a power dissipation of 1mW if the equilibrium overdrive must be at least 150 mV. Assume λ=0 and µCox=100mA/V2, and VDD=1.8V.

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