sagars project

8/17/2019 Sagars Project

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PC

BASED INDUSTRIAL MANUFACTURING AUTOMATION

A PROJECR REPORT SUBMITTED IN PARTIAL FULFILLMENT OF THE

REQUIREMENT OF DEGREE OF

Of

Bachelor of Technolog

In

Elec!ron"c# $ Co%%&n"ca!"on Eng"neer"ng

B

'&n(an '&%ar )**+*,+-*.+/

San!o#h '& Maha0a!ra )*11*,+-**2/

Sagar B"#3al )**+*,+-*.4/

A5"! Pa!ra )*11*,+-**1/

Sh"6an" Mohan!a )**+*,+-*,-/

Sang"!a Mah&n!a )*11*,+-**1/

Jo!"re7ha Moha7&( )**+*,+-*,4/

DEPARTMENT OF ELECTRONICS $ COMMUNICATION ENGINEERING

MAHARAJA INSTITUTE OF TECHNOLOG89 BHUBANES:AR

BIJU PATTNAI' UNI;ERSIT8 OF TECHNOLOG89 ROUR'ELA

ODISHA9 IND"a

1+*


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PC

BASED INDUSTRIAL MANUFACTURING AUTOMATION

A PROJECR REPORT SUBMITTED IN PARTIAL FULFILLMENT OF THE

REQUIREMENT OF DEGREE OF

Of

Bachelor of Technolog

In

Elec!ron"c# $ Co%%&n"ca!"on Eng"neer"ng

B

'&n(an '&%ar )**+*,+-*.+/

San!o#h '& Maha0a!ra )*11*,+-**2/

Sagar B"#3al )**+*,+-*.4/

A5"! Pa!ra )*11*,+-**1/

Sh"6an" Mohan!a )**+*,+-*,-/

Sang"!a Mah&n!a )*11*,+-**1/

Jo!"re7ha Moha7&( )**+*,+-*,4/

Un(er !he G&"(ance of= ASST= PROFF= MISS= SATARUPA MAHAPATRA

DEPARTMENT OF ELECTRONICS $ COMMUNICATION ENGINEERING

MAHARAJA INSTITUTE OF TECHNOLOG89 BHUBANES:AR

BIJU PATTNAI' UNI;ERSIT8 OF TECHNOLOG89 ROUR'ELA

ODISHA9 INDIA

1+*


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De0ar!%en! of Elec!ron"c# $ Co%%&n"ca!"on Eng"neer"ng= Mahara5a In#!"!&!e Of Technolog9 BBSR

B"5& Pa!!na"7 &n">er#"! of Technolog9

Ro&r7ela9 O("#ha9 In("a

CERTIFICATE

Th"# "# cer!"f !ha! !he 0ro5ec! re0or! INDUSTRIAL MANUFACTURING

AUTOMATION? S&6%"!!e( 6 @'&n(an 7&%ar )**+*,+-*.2/9San!o#h 7& Maha0a!ra

)*11*,+-**2/9 Sagar B"#3al )**+*,+-*.4/9 A5"! Pa!ra )*11*,+-**./9 Sh"6an" Mohan!a

)**+*,+-*.2/9 Sang"!a Mah&n!a )*11*,+-**1/ 9 Jo!" re7ha Moha7&( )**+*,+-*,4/9 "n 0ar!"

F&lf"ll%en! of !he re&"re%en! of %a5or 0ro5ec! "n !he -!h #e%e#!er of Degree "n Elec!ron"c

Co%%&n"ca!"on Eng"neer"ng (&r"ng !he #e##"on 1+** 1+*< a! Mahara5a In#!"!&!e Of Technolog9 Bh&6ane#3ar "# an 6onaf"e( 3or7 carr"e( o&! 6 her &n(er % #&0er>"#"on an( G&"(ance=

Th"# 3or7 "# 3or!h of con#"(era!"on for 0ar!"al f&lf"ll%en! for a3ar("ng !he

Degree of B=!ech "n Elec!ron"c# $ Co%%&n"ca!"on Eng"neer"ng=

A##!= 0roff=Sa!ar&0a Moha0a!ra E!ernal G&"(e HOD

De0ar!%en! of ECE De0ar!%en! Of ECE

)G&"(e/ MIT9BBSR

DECLARATION


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We certify that,The work contained in this report is original and

been done by us

Under the guidance of my supervisor ASST.P!"!!PA #!$APATA .The

Work has not been submitted in any other institute for anydegree or

%iploma . We have follow the guidelines provided by theute in prepairing the

report. Whenever we used materials &data, theoreticalsis "igures and te't

from other sources, we have given due credit to them byciting them in the

te't of the report and giving their details in the reference.

'&n(an '&%ar )**+*,+-*.2/

San!o#h '& Maha0a!ra )*11*,+-**2/

Sagar B"#3al )**+*,+-*.4/

A5"! Pa!ra )*11*,+-**./

Sh"6an" Mohan!a )**+*,+-*.2/

Sang"!a Mah&n!a )*11*,+-**1/

Jo!" re7ha Moha7&( )**+*,+-*,4/


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Hea( of De0ar!%en! Se%"nar G&"(e

Rakesh Chauhan Mr. Mayank SharmaAsst. Professor Asst. Professor

Department of ECE Department of ECE

S.M.E.C Neemrana S.M.E.C Neemrana

AC'NO:LEDGEMENT


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I express my sincere thanks to my guide Mr. Mayank Sharma Assistant Professor E.I.C Department

St. Margarat Engineering Co!!ege Neemrana for guiding me right from the inception ti!! the

successfu! comp!etion. I sincere!y ackno"!edge him for extending his #a!ua$!e guidance support for

!iterature critica! re#ie"s of seminar report and a$o#e a!! the mora! support he had pro#ided to me

"ith a!! stages of the seminar.

%ina!!y I "ou!d !ike to add fe" heartfe!t "ords for the peop!e "ho "ere the part of the seminar in

#arious "ays especia!!y my friends and c!assmates "ho ga#e me unending support right from the

$eginning. My fami!y has $een the most significant in my !ife so far and this part of my !ife has no

exception. &ithout their support persistence and !o#e I "ou!d not $e "here I am today.

'ikas yada#

()ESMEC)*+

ABSTRACT

No" a days "ith the gro"ing popu!ation and energy demand "e shou!d take a rene"a$!e option of

energy source and a!so "e shou!d keep in mind that energy shou!d not cause po!!ution and other

natura! ha,ards. In this case the so!ar energy is the $est option for us.


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India is a high!y popu!ated country so "e shou!d take the ad#antage of such an energy "hich re-uires

a #ery !ess space to produce energy efficient!y. In this case so!ar tree cou!d $e the $est one for us. &e

can a!so use the techni-ue ca!!ed SPIRA//IN0 P12//A3A425 to impro#e the efficiency of the

p!ant. It can $e app!ied in street !ightening system industria! po"er supp!y etc. It is much $etter than

the traditiona! so!ar P' system in area point of #ie" and a!so more efficient. So this "i!! $e a #ery

good option and shou!d $e imp!emented.

INTRODUCTION

It is a form of rene"a$!e energy resource that is some measure competiti#e "ith fossi! fue!s.

1ydro po"er is the force of energy of mo#ing "ater. It pro#ides a$out *67 of the rene"a$!e

energy in the united state. 1ydro e!ectric po"er p!ants do not use any resources to create

e!ectricity or they do not po!!ute the air.

3he sun is a hydrodynamic spherica! $ody of extreme!y hot ioni,ed gases8p!asma9 generating

energy $y the process of the thermonuc!ear fusion. 3he temperature of interior of sun is estimated

at :;()


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So!ar energy is a#ai!a$!e in a$undance and considered as the easiest and c!eanest means of tapping

the rene"a$!e energy. %or direct con#ersion of so!ar radiation into usa$!e form the routes are=

so!ar therma! so!ar photo#o!taic and so!ar architecture. 1o"e#er the main pro$!em associated "ith

tapping so!ar energy is the re-uirement to insta!! !arge so!ar co!!ectors re-uires a #ery $ig space. 3o

a#oid this pro$!em "e can insta!! a so!ar tree in spite of a no of so!ar pane!s "hich re-uire a #ery

sma!! space.

:HAT IS A SOLAR TREE

A so!ar tree is a decorati#e means of producing so!ar energy and a!so e!ectricity. It uses mu!tip!e no of

so!ar pane!s "hich forms the shape of a tree. 3he pane!s are arranged in a tree fashion in a ta!!

to"er>po!e.

TREE #!an(# for

3? 3REE 0ENERA3IN0

R?RENE&A@/E

E?ENER02 and

E?E/EC3RICI32

3his is !ike a tree in structure and the pane!s are !ike !ea#es of the tree "hich produces energy.

SPIRALLING PH8LLATA8


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It is a techni-ue used in designing of so!ar tree . it pro#ides the "ay to he!p the !o"er pane!s from

the shado" of upper ones so that it can track maximum po"er from sun.

So!ar 3ree

INTRODUCTION ABOUT SOLAR CELL

A so!ar ce!! 8photo#o!taic ce!! or photoe!ectric ce!!9 is a so!id state e!ectrica! de#ice that con#erts the

energy of !ight direct!y into e!ectricity $y the photo#o!taic effect. 3he energy of !ight is transmitted $y

photonssma!! packets or -uantum of !ight. E!ectrica! energy is stored in e!ectromagnetic fie!ds

"hich in turn can make a current of e!ectrons f!o".

Assem$!ies of so!ar ce!!s are used to make so!ar modu!es "hich are used to capture energy from

sun!ight. &hen mu!tip!e modu!es are assem$!ed together 8such as prior to insta!!ation on a po!e

mounted tracker system9 the resu!ting integrated group of modu!es a!! oriented in one p!ane is

referred as a so!ar pane!. 3he e!ectrica! energy generated from so!ar modu!es is an examp!e of so!ar

energy. Photo#o!taic is the fie!d of techno!ogy and research re!ated to the practica! app!ication of

photo#o!taic ce!!s in producing e!ectricity from !ight though it is often used specifica!!y to refer to the

generation of e!ectricity from sun!ight. Ce!!s are descri$ed as photo#o!taic ce!!s "hen the !ight source

is not necessari!y sun!ight. 3hese are used for detecting !ight or other e!ectromagnetic radiation near

the #isi$!e range for examp!e infrared detectors or measurement of !ight intensity.


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.

HO: SOLAR CELL :OR'S

So!ar ce!!s "hich !arge!y are made from crysta!!ine si!icon "ork on the princip!e of Photoe!ectric

Effect that this semiconductor exhi$its. Si!icon in its purest form Intrinsic Si!icon is doped "ith a

dopant impurity to yie!d Extrinsic Si!icon of desired characteristic 8ptype or ntype Si!icon9. &hen p

and n type si!icon com$ine they resu!t in formation of potentia! $arrier.

&orking of So!ar ce!!s can thus $e $ased on t"o crysta!!ine structure

• Intrinsic Si!icon• Extrinsic Si!icon


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P&re S"l"con )In!r"n#"c/ Cr#!all"ne S!r&c!&re

Si!icon has some specia! chemica! properties especia!!y in its crysta!!ine form. An atom of si!icon has

(+ e!ectrons arranged in three different she!!s. 3he first t"o she!!s "hich ho!d t"o and eight

e!ectrons respecti#e!y are comp!ete!y fu!!. 3he outer she!! ho"e#er is on!y ha!f fu!! "ith Bust four

e!ectrons 8'a!ence e!ectrons9. A si!icon atom "i!! a!"ays !ook for "ays to fi!! up its !ast she!! and to

do this it "i!! share e!ectrons "ith four near$y atoms. Its !ike each atom ho!ds hands "ith its

neigh$ours except that in this case each atom has four hands Boined to four neigh$ours. 3hats "hat

forms the crysta!!ine structure. 3he on!y pro$!em is that pure crysta!!ine si!icon is a poor conductor of

e!ectricity $ecause none of its e!ectrons are free to mo#e a$out un!ike the e!ectrons in more optimum

conductors !ike copper

I%0&r"! S"l"con )E!r"n#"c/ P!0e an( N!0e Se%"con(&c!or#

Extrinsic si!icon in a so!ar ce!! has added impurity atoms purposefu!!y mixed in "ith the si!icon

atoms may$e one for e#ery mi!!ion si!icon atoms. Phosphorous has fi#e e!ectrons in its outer she!!. It

$onds "ith its si!icon neigh$or atoms ha#ing #a!ency of + $ut in a sense the phosphorous has one

e!ectron that doesnt ha#e anyone to $ond "ith. It doesnt form part of a $ond $ut there is a positi#e

proton in the phosphorous nuc!eus ho!ding it in p!ace. &hen energy is added to pure si!icon in the

form of heat it causes a fe" e!ectrons to $reak free of their $onds and !ea#e their atoms. A ho!e is !eft

$ehind in each case. 3hese e!ectrons ca!!ed free carriers then "ander random!y around the

crysta!!ine !attice !ooking for another ho!e to fa!! into and carry an e!ectrica! current. In Phosphorous

doped Si!icon it takes a !ot !ess energy to knock !oose one of extra phosphorous e!ectrons $ecause

they arent tied up in a $ond "ith any neigh$oring atoms. As a resu!t most of these e!ectrons $reak

free and re!ease a !ot more free carriers than in pure si!icon. 3he process of adding impurities on

purpose is ca!!ed doping and "hen doped "ith phosphorous the resu!ting si!icon is ca!!ed Ntype

8n for negati#e9 $ecause of the pre#a!ence of free e!ectrons. Ntype doped si!icon is a much $etter

conductor than pure si!icon. 3he other part of a typica! so!ar ce!! is doped "ith the e!ement $oron

"hich has on!y three e!ectrons in its outer she!! instead of four to $ecome Ptype si!icon. Instead of


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ha#ing free e!ectrons Ptype 8p for positi#e9 has free openings and carries the opposite positi#e

charge

For%a!"on of Po!en!"al Barr"er an( Pho!oelec!r"c Effec!

3he e!ectric fie!d is formed "hen the Ntype and Ptype si!icon come into contact. Sudden!y the free

e!ectrons on the N side com$ine the openings on the P side. Right at the Bunction they com$ine and

form something of a $arrier making it harder and harder for e!ectrons on the N side to cross o#er to

the P side 8ca!!ed P3EN3IA/ @ARRIER9. E#entua!!y e-ui!i$rium is reached and an e!ectric fie!d

separating the t"o sides is set up. 3his e!ectric fie!d acts as a diode a!!o"ing 8and e#en pushing9

e!ectrons to f!o" from the P side to the N side $ut not the other "ay around. Its !ike a hi!! e!ectrons

can easi!y go do"n the hi!! 8to the N side9 $ut cant c!im$ it 8to the P side9.

&hen !ight in the form of photons hits so!ar ce!! its energy $reaks apart e!ectronho!e pairs

8Photoe!ectric effect9. Each photon "ith enough energy "i!! norma!!y free exact!y one e!ectron

resu!ting in a free ho!e as "e!!. If this happens c!ose enough to the e!ectric fie!d or if free e!ectron and

free ho!e happen to "ander into its range of inf!uence the fie!d "i!! send the e!ectron to the N sideand the ho!e to the P side. 3his causes further disruption of e!ectrica! neutra!ity and if an externa!

current path is pro#ided e!ectrons "i!! f!o" through the path to the P side to unite "ith ho!es that the

e!ectric fie!d sent there doing "ork for us a!ong the "ay. 3he e!ectron f!o" pro#ides the current and

the ce!!s e!ectric fie!d causes a #o!tage.

http://science.nasa.gov/science-news/science-at-nasa/2002/solarcells/http://science.nasa.gov/science-news/science-at-nasa/2002/solarcells/


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3he fina! step is to insta!! something that "i!! protect the ce!! from the externa! e!ements often a g!ass

co#er p!ate. P' modu!es are genera!!y made $y connecting se#era! indi#idua! ce!!s together to

achie#e usefu! !e#e!s of #o!tage and current and putting them in a sturdy frame comp!ete "ith

positi#e and negati#e termina!s.

Man&fac!&r"ng Technolog an( 0roce## of Solar Cell

ST(P ) * PU+"+AT+!- !" S++!-/

3he $asic component of a so!ar ce!! is intrinsic si!icon "hich is not pure in its natura! state. 3o make

so!ar ce!!s the ra" materia!sFsi!icon dioxide of either -uart,ite gra#e! or crushed -uart,Fare first

p!aced into an e!ectric arc furnace "here a car$on arc is app!ied to re!ease the oxygen. A 0raphite

and 3herma! insu!ator trap the heat and maintain the furnace at re-uired temperature for gangue

8impurity9 to form a s!ag. 3he products are car$on dioxide and mo!ten si!icon. Si!icon ingot is pu!!eddo"n from the mo!ten si!icon using seed si!icon crysta!!i,ation and f!oating ,one techni-ue. Passing

impure si!icon in same direction se#era! times that separates impurities and impure end is !ater

remo#ed. 3his process yie!ds si!icon "ith one percent impurity usefu! in many industries $ut not the

so!ar ce!! industry. At this point the si!icon is sti!! not pure enough to $e used for so!or ce!!s and


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re-uires further purification. Pure si!icon is deri#ed from such si!icon dioxides as -uart,ite gra#e! 8the

purest si!ica9 or crushed -uart,.

ST(P 0* +-1!T A-% WA"( P(PAAT+!-/

So!ar ce!!s are made from si!icon $ou!es po!ycrysta!!ine structures that ha#e the atomic structure of a

sing!e crysta!. 3he most common!y used process for creating the $ou!e is ca!!ed the C,ochra!ski

method. In this process a seed crysta! of si!icon is dipped into me!ted po!ycrysta!!ine si!icon. As the

seed crysta! is "ithdra"n and rotated a cy!indrica! ingot or $ou!e of si!icon is formed. 3he ingot

"ithdra"n is unusua!!y pure $ecause impurities tend to remain in the !i-uid. %rom the $ou!e si!icon

"afers are s!iced one at a time using a circu!ar sa" "hose inner diameter cuts into the rod or many at

once "ith a mu!ti "ire sa". 8A diamond sa" produces cuts that are as "ide as the "aferF. G

mi!!imeter thick.9 n!y a$out oneha!f of the si!icon is !ost from the $ou!e to the finished circu!ar


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"aferFmore if the "afer is then cut to $e rectangu!ar or hexagona!. Rectangu!ar or hexagona! "afers

are sometimes used in so!ar ce!!s $ecause they can $e fitted together perfect!y there$y uti!i,ing a!!

a#ai!a$!e space on the front surface of the so!ar ce!!. 3he "afers are then po!ished to remo#e sa"

marks.

ST(P 2 * %!P+-1/

3he traditiona! "ay of doping si!icon "afers "ith $oron and phosphorous is to introduce a sma!!

amount of $oron during the C,ochra!ski process. 3he "afers are then sea!ed $ack to $ack and p!acedin a furnace to $e heated to s!ight!y $e!o" the me!ting point of si!icon 8HG) degrees %ahrenheit or

(+() degrees Ce!sius9 in the presence of phosphorous gas. 3he phosphorous atoms $urro" into the

si!icon "hich is more porous $ecause it is c!ose to $ecoming a !i-uid. 3he temperature and time

gi#en to the process is carefu!!y contro!!ed to ensure a uniform Bunction of proper depth. 3hese

diffusion processes are usua!!y performed through the use of a $atch tu$e furnace or an in!ine

continuous furnace. 3he $asic furnace construction and process are #ery simi!ar to the process steps

used $y packaging engineers.

ST(P 3 * S((- P+-T+-1/

E!ectrica! contacts are formed through s-uee,ing a meta! paste through mesh screens to create a meta!

grid. 3his meta! paste 8usua!!y Ag or A!9 needs to $e dried so that su$se-uent !ayers can $e screen

printed using the same method. As a !ast step the "afer is heated in a continuous firing furnace at

temperatures ranging from :) to *))JC. 3hese grid pattern meta! screens act as co!!ector e!ectrodes

that carry e!ectrons and comp!ete the e!ectrica! continuity in the circuit.

ST(P 4 * ST+-1+-1 A-% TA55+-1/


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E!ectrica! contacts connect each so!ar ce!! to another and to the recei#er of produced current. 3he

contacts must $e #ery thin 8at !east in the front9 so as not to $!ock sun!ight to the ce!!. Meta!s such as

pa!!adium>si!#er nicke! or copper are #acuume#aporated After the contacts are in p!ace thin strips

8fingers9 are p!aced $et"een ce!!s. 3he most common!y used strips are tincoated copper.

STEP 2 ANTIREFLECTI;E COATING

@ecause pure si!icon is shiny it can ref!ect up to KG percent of the sun!ight. 3o reduce the amount of sun!ight !ost an antiref!ecti#e coating is put on the si!icon "afer most!y titanium dioxide si!icon

oxide and some others are used. 3he materia! used for coating is either heated unti! its mo!ecu!es $oi!

off and tra#e! to the si!icon and condense or the materia! undergoes sputtering. In this process a high

#o!tage knocks mo!ecu!es off the materia! and deposits them onto the si!icon at the opposite e!ectrode.

2et another method is to a!!o" the si!icon itse!f to react "ith oxygen or nitrogencontaining gases to

form si!icon dioxide or si!icon nitride. Commercia! so!ar ce!! manufacturers use si!icon nitride.

Another method to make si!icon a$sor$ more !ight is to make its top surface grained i.e. pyramid

shaped nanostructures that yie!d )7 a$sorption that reaches the ce!! surface after passing through

antiref!ecti#e coating.


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ST(P 6 * #!%U( #A-U"ATU+-1

3he finished so!ar ce!!s are then encapsu!atedL that is sea!ed into si!icon ru$$er or ethy!ene #iny!

acetate. So!ar modu!e assem$!y usua!!y in#o!#es so!dering ce!!s together to produce a K6ce!! string

8or !onger9 and !aminating it $et"een toughened g!ass on the top and a po!ymeric $acking sheet on

the $ottom. 3he encapsu!ated so!ar ce!!s are then p!aced into an a!uminum frame that has a My!ar or

ted!ar $ack sheet and a g!ass or p!astic co#er. %rames are usua!!y app!ied to a!!o" for mounting in the

fie!d or the !aminates may $e separate!y integrated into a mounting system for a specific app!ication

such as integration into a $ui!ding.

A(>an!age# of Solar Panel#

Pri#ate home o"ners are disco#ering the $enefits to our en#ironment and a "ay to !i#e happi!y off the

grid or are considering insta!!ing a gridtied so!ar po"er system to offset their e!ectric $i!! or due to a

$e!ief in reducing their car$on emissions. 3hese are great reasons to go so!ar...

• Ecolog"call Fr"en(l %or o$#ious reasons the use of so!ar pane!s is Ecofriend!y and

considered one of the most green e!ectricity resources. @ecause $ecause they operate $y

interacting "ith a rene"a$!e energy source sun!ight there is no fear of dep!eting yet another

natura! resource.


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• Decrea#e( Elec!r"cal B"ll @y s"itching to so!ar energy you "i!! sa#e money on your

e!ectrica! $i!!s e#ery month. E#en if e!ectricity $i!!s continue raising in the next fe" months

you "i!! ha#e the peace of mind kno"ing that your energy source is $ased on so!ar po"er.

• Lo3 Ma"n!enance So!ar pane!s ha#e no mo#ea$!e parts and are #ery simp!e to use. After

$eing set up proper!y they do not need to $e tinkered "ith and "i!! continuing "orking for

many years. In fact many manufacturers ha#e HG year "arranties on their pane!s.

• Eff"c"enc No matter "here you !i#e the chances are that you can successfu!!y use so!ar

pane!s for you e!ectrica! needs. 3hey are rugged and are #ery adapta$!e to c!imate conditions

and the !atest pane! mode!s are efficient enough to "ork "e!! "ithout facing direct!y south and

some "i!! e#en produce e!ectricity under c!oud co#er.

Regard!ess of "ho you are or "hat type of home you ha#e so!ar po"er is one of the $est "ays to

pro#ide you and your fami!y "ith e!ectricity "ithout causing more damage to our p!anet.

3here are many "ays to take ad#antage of the sa#ings gained from so!ar pane! systems. Not on!y does

it he!p you sa#e $y cutting your energy re-uirement from the uti!ity company it may a!so a!!o" you

to !ock in a !o"er so!ar po"er rate. @y using the e!ectricity produced $y your unit during the day

8"hen rates are at their highest9 and using the uti!ity companys po"er in the e#ening 8"hen the rates

are at their !o"est9 you "i!! !o"er your o#era!! cost for a!! of your e!ectrica! use. 3here are a!so many

re$ates a#ai!a$!e to he!p you sa#e +)6)7 on the cost of ac-uiring your system. %or more information

on re$ates and incenti#es for insta!!ing a so!ar po"er system on your home or $usiness !ook up

Energy Incenti#es on the IRS "e$site or check "ith your !oca! tax ad#iser for detai!s.


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:H8 :E CALLED IT AS SOLAR TREE

As "e kno" trees are present in nature and they can produce their o"n food materia! $y the process

ca!!ed P13S2N31ESIS. It is the process $y "hich the green p!ant co!!ects energy from sun and

the "ater present in soi! at the day time and can produces their o"n food materia!. @y this process

they are indirect!y pro#iding food to the human society $ecause "e are depending on the green p!ants

for our food direct!y or indirect!y.

1ere "e are considering the examp!e for understanding a$out the so!ar tree. 3his is a tree in "hich

the stems connected acts as the $ranches of the tree and the so!ar pane!s are !ike the !ea#es. 0reen!ea#es are producing food materia!s for human $eings !ike"ise this !ea#es are producing energy for

the society. So it is #ery appropriate to ca!!ed it as a tree.


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Natura! 3ree So!ar 3ree

:H8 IT IS NEEDED

D&e !o le## lan( re&"re%en!

It is the $est option of energy generation $ecause it re-uires #ery !ess !and as compare to the

traditiona! P' system. No" a days !and $ecomes the cost!iest commodity for the human society

$ecause of high popu!ation gro"th. Examp!e 3o generate H M& po"er from a P' modu!e "e

re-uires () (H acres of !and for housing of pane!s on!y. @ut for the same amount of energy "e

re-uire on!y ).()).(H acres of !and in case of so!ar tree. So "e re-uire such a p!ant "hich can

generate maximum energy using minimum !and.

Eff"c"en! energ genera!"on

It can generate energy #ery efficient!y as compare to traditiona! system. Due to the techni-ue ca!!ed

spira!ing phy!!ataxy its efficiency further increase. &e can a!so use the techni-ue ca!!ed

SPIRA//IN0 P12//A3A425 to impro#e the efficiency of the p!ant. It can $e app!ied in street

!ightening system industria! po"er supp!y etc. It is much $etter than the traditiona! so!ar P' system

in area point of #ie" and a!so more efficient. 3hough it is someho" cost!y $ut as compare to a!! cost

in#o!#e in traditiona! system it is more efficient.

I! can collec! energ fro% 3"n(

As the name suggest this is a de#ice to generate energy from sun $ut it has some uni-ue feature to

generate energy from "ind. 3he stem are f!exi$!e so that they can rotate in any direction and $y

shaking themse!#es they produce energy a!so from "ind as in the case of a natura! tree. 3he uni-ue

techni-ue is that f!exi$!e pane!s connected to the stem "hich can $e rotated as our desire. So that

f!exi$i!ity a#oidance of "ind pressure can $e possi$!e. %!exi$i!ity offers manua! rotating so that

maximum po"er can $e o$tained.


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CONSTRUCTION AND :OR'ING

3he so!ar tree consists of some important parts in its design. 3hey are as fo!!o"s=

• So!ar pane!s

•/ong to"er

• /DEs

• @atteries

• Stems for connecting the pane!s

:OR'ING

• @atteries are charged during the day time.

• /EDs are automatica!!y s"itched on

• 3hese are used to indicate ho" much charge>energy remain !eft

• @atteries are a!so used to store the energy so that "e can use it at night and in c!oudy days

"hen no sun!ight is there.

LED#

-=* L"gh! E%"!!"ng D"o(e )LED/


23/26

L"gh! E%"!!"ng D"o(e

A !ightemitting diode 8/ED9 is a semiconductor !ight source. /EDs are used as indicator !amps in

many de#ices and are increasing!y used for other !ighting. Appearing as practica! e!ectronic

components in (*6H ear!y /EDs emitted !o"intensity red !ight $ut modern #ersions are

a#ai!a$!e across the #isi$!e u!tra#io!et and infrared "a#e!engths "ith #ery high $rightness.

In!ernal De#cr"0!"on of LED

&hen a !ightemitting diode is for"ard$iased 8s"itched on9 e!ectrons are a$!e to recom$ine "ith

e!ectron ho!es "ithin the de#ice re!easing energy in the form of photons. 3his effect is ca!!ed

e!ectro!uminescence and the co!or of the !ight 8corresponding to the energy of the photon9 is

determined $y the energy gap of the semiconductor. An /ED is often sma!! in area 8!ess than ( mmH9

and integrated optica! components may $e used to shape its radiation pattern.

In!ernal (e#cr"0!"on of LED


24/26

/EDs present many ad#antages o#er incandescent !ight sources inc!uding !o"er energy consumption

!onger !ifetime impro#ed physica! ro$ustness sma!!er si,e and faster s"itching. /EDs po"erfu!

enough for room !ighting are re!ati#e!y expensi#e and re-uire more precise current and heat

management than compact f!uorescent !amp sources of compara$!e output.

Elec!ron"c S%6ol of LED

/ightemitting diodes are used in app!ications as di#erse as a#iation !ighting automoti#e !ighting

ad#ertising genera! !ighting and traffic signa!s. /EDs ha#e a!!o"ed ne" text #ideo disp!ays and

sensors to $e de#e!oped "hi!e their high s"itching rates are a!so usefu! in rea!!y $e

ad#anced communications techno!ogy. Infrared /EDs are a!so used in the remote contro! units of

many commercia! products inc!uding te!e#isions D'D p!ayers and other domestic app!iances.

:H8 IT IS BETTER THAN A TRADITIONAL S8STEM

India is a high!y popu!ated country so "e shou!d take the ad#antage of such an energy "hich re-uires

a #ery !ess space to produce energy efficient!y. In this case so!ar tree cou!d $e the $est one for us. It is

much $etter than the traditiona! so!ar P' system in area point of #ie" and a!so more efficient. So this

"i!! $e a #ery good option and shou!d $e imp!emented.%or the traditiona! system "e re-uire !arge si,e of !and to generate a sma!! amount of po"er. It

re-uires a$out (7 !and as compare to the traditiona! system. So!ar energy is a#ai!a$!e in a$undance

and considered as the easiest and c!eanest means of tapping the rene"a$!e energy. %or direct

con#ersion of so!ar radiation into usa$!e form the routes are= so!ar therma! so!ar photo#o!taic and

so!ar architecture. 1o"e#er the main pro$!em associated "ith tapping so!ar energy is the re-uirement

to insta!! !arge so!ar co!!ectors re-uires a #ery $ig space. 3o a#oid this pro$!em "e can insta!! a so!ar

tree in spite of a no of so!ar pane!s "hich re-uire a #ery sma!! space.

Examp!e 3o generate H M& po"er from a p# modu!e "e re-uires () (H acres of !and for

housing of pane!s on!y $ut for the same amount of energy "e re-uire on!y ).()).(H acres of !and

in case of so!ar tree.


25/26

3raditiona! P' so!ar System So!ar 3ree

APPLICATION

• Street !ight

• 1ouse supp!y

• Industria! po"er supp!y


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AD;ANTAGES

• No air po!!ution

• &e "ou!dnt ha#e to "orry as much a$out future energy sources

• Peop!e in poor country "ou!d ha#e access to e!ectricity• Peop!e can sa#e money

• /and re-uirement is #ery !ess

DISAD;ANTAGES

• Cost is high

• May cause ha,ards to the $irds and insects

• 1a,ards to eyesight from so!ar ref!ectors

sagars project

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