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DatasheetS6404 SiC Schottky Barrier Diode Bare Die

Continuous forward current (Tc=145°C)

*1 Limited by Tj *2 Assumes Zth(j-a) of 0.16 °C/W or less. (Pulse Width = 8.3ms)

Features Inner Circuit

VR 1700V

IF 50A

QC 158nC

1) Shorter recovery time

2) Reduced temperature dependence

3) High-speed switching possible

ConstructionSilicon carbide epitaxial planar type

Schottky diode

Absolute Maximum Ratings (Tj = 25°C )

Parameter Symbol Value Unit

Reverse voltage (repetitive peak) VRM 1700 V

Reverse voltage (DC) VR 1700 V

A

Surge non-repetitive forwardcurrent

PW=10ms sinusoidal, Tj=25°C

IFSM

150 A

PW=10ms sinusoidal, Tj=150°C 110 A

PW=10s square, Tj=25°C 630 A

IF 50

120i2t value

1≦PW≦10ms, Tj=25°C∫i2dt

A2s

1≦PW≦10ms, Tj=150°C 60 A2s

Range of storage temperature Tstg 55 to 175 °C

175Junction temperature Tj °C

*1

*2

*2

*1

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DatasheetS6404

Electrical characteristics (Tj = 25°C)

UnitMin. Typ. Max.

DC blocking voltage VDC IR =0.3mA 1700 - - V

Parameter Symbol ConditionsValues

1.95 V

IF=50A,Tj=150°C - 2.5 - VForward voltage VF

IF=50A,Tj=25°C - 1.65

IF=50A,Tj=175°C - 2.8 - V

Reverse current IR

VR=1700V,Tj=25°C - 5 300 A

VR=1700V,Tj=150°C - 110 - A

VR=1700V,Tj=175°C -

- pF

250 - A

- pFTotal capacitance C

VR=1V,f=1MHz - 3100

VR=1700V,f=1MHz - 170

- nC

Switching time tC VR=800V,di/dt=500A/s - 39 - ns

Total capacitive charge QC VR=800V,di/dt=500A/s - 158

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DatasheetS6404

Electrical characteristic curves

　

Fig.3 VR - IR Characteristics

Fig.1 VF - IF Characteristics

For

war

d C

urre

nt :

I F[A

]

Forward Voltage : VF [V]

Fig.2 VF - IF Characteristics

For

war

d C

urre

nt :

I F[A

]

Forward Voltage : VF [V]

Rev

erse

Cur

rent

: I

R[

A]

Reverse Voltage : VR [V]

Fig.4 VR-Ct Characteristics

Cap

acita

nce

Bet

wee

n T

erm

inal

s : C

t[p

F]

Reverse Voltage : VR [V]

0.001

0.01

0.1

1

10

100

1000

0 500 1000 1500

Ta=125ºC

Ta=175ºC

Ta=75ºC

Ta=25ºC

Ta= 25ºC

0.001

0.01

0.1

1

10

100

0.0 0.5 1.0 1.5 2.0 2.5

Pulsed

Ta=125ºC

Ta=175ºC

Ta=75ºC

Ta=25ºC

Ta= 25ºC

0

10

20

30

40

50

60

70

0.0 1.0 2.0 3.0 4.0

Pulsed

Ta=125ºC

Ta=175ºC

Ta=75ºC

Ta=25ºC

Ta= 25ºC

1

10

100

1000

10000

0.01 0.1 1 10 100 1000

Ta=25ºCf=1MHz

3/4 2017.11 - Rev.A

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DatasheetS6404

Electrical characteristic curves

b2 5.64E-07 /°C2

1.52E-03 V/°C

b0 1.20E-02

b1 8.13E-05 /°C

Symbol Typical Value Unit

a0 9.21E-01 V

a1

Fig.5 Surge non-repetitive forward current vs. Pulse width (Sinusoidal waveform)*

Sur

ge n

on-r

epet

itive

for

war

d cu

rren

t : I F

SM

[A]

Pulse Width : PW [s]

Fig.6 Typical capacitance store energy

Cap

acita

nce

stor

ed e

nerg

y : E

C[

J]

Reverse Voltage : VR [V]

For

war

d C

urre

nt :

I F

Forward Voltage : VF

Fig.7 Equivalent forward current curve

VF = Vth + Rdiff IF

Vth ( Tj ) = a0 + a1 TjRdiff ( Tj ) = b0 + b1 Tj + b2 Tj

2

Vth1/Rdiff

Tj in ºC; -55 ºC < Tj < ºC ; IF < 100A

10

100

1000

1E-5 1E-4 1E-3 1E-2

Ta=25ºCSingle Pulse

0

50

100

150

200

250

300

0 500 1000 1500

* Assumes Zth(j-a) of 0.38 °C/W or less. (Pulse Width = 8.3ms)

4/4 2017.11 - Rev.A

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