s ng lsi tamper resistance with respect to techniques … · ng lsi tamper resistance with respect...

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Physical Security Testing Workshop, Hawaii, 26-29 September 2005 Studying LSI Tamper Resistance With Respect to Techniques Developed for Failure Analysis Tsutomu Matsumoto Shigeru Nakajima Yokohama National University Van Partners Corporation Tadashi Shibata Atsuhiro Yamagishi University of Tokyo Information-technology Promotion Agency, Japan

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Phys

ical

Sec

urity

Tes

ting

Wor

ksho

p, H

awai

i, 26

-29

Sept

embe

r 200

5

Stud

ying

LSI

Tam

per R

esis

tanc

e W

ith R

espe

ct to

Tec

hniq

ues

Dev

elop

ed fo

r Fai

lure

Ana

lysi

s

Tsut

omu

Mat

sum

oto

Shig

eru

Nak

ajim

a Yo

koha

ma

Nat

iona

l Uni

vers

ity 

Van

Partn

ers

Cor

pora

tion

Tada

shi S

hiba

ta

Ats

uhiro

Yam

agis

hiU

nive

rsity

of T

okyo

In

form

atio

n-te

chno

logy

P

rom

otio

n A

genc

y, J

apan

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

2

Con

tent

s1.

Intro

duct

ion

Tam

per r

esis

tanc

e of

LS

I chi

ps a

gain

st p

hysi

cala

ttack

s is

stu

died

fro

m th

e vi

ewpo

int o

f LS

I fai

lure

ana

lysi

s.2.

Bas

ic P

hysi

cal P

heno

men

a in

LS

I Chi

ps3.

Failu

re A

naly

sis

Tech

niqu

esLa

ying

stre

ss o

n th

e ba

sic

phys

ical

phe

nom

ena

gene

rate

d in

LS

I ch

ips

unde

r ope

ratin

g co

nditi

ons,

we

outli

ne to

day’

s fa

ilure

an

alys

is te

chni

ques

with

app

licat

ion

to e

valu

atin

g or

test

ing

tam

per

resi

stan

ce o

f LS

I chi

ps.

4.A

Cas

e S

tudy

of T

ampe

ring

Sen

sor C

ircui

tsW

e gi

ve s

ome

resu

lts fr

om o

ur c

ase

stud

y on

inac

tivat

ion

of s

enso

r ci

rcui

ts w

here

em

issi

on m

icro

scop

y pl

ays

an im

porta

nt ro

ll.5.

A T

enta

tive

Cla

ssifi

catio

n of

Sec

urity

Lev

els

Fina

lly w

e sh

ow a

n at

tem

pt to

cla

ssify

the

secu

rity

leve

ls fo

r LS

I ch

ips

with

resp

ect t

o th

e re

quire

d eq

uipm

ent a

nd th

e re

quire

d sk

ills

of a

ttack

ers.

6.S

umm

ary

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

3

2. B

asic

Phy

sica

l Phe

nom

ena

in L

SI C

hips

Two

Cla

sses

; “G

ener

ated

”and

“Stim

ulat

ed”

1.G

ener

ated

Phy

sica

l Phe

nom

ena

–ar

e th

ose

gene

rate

d in

ope

ratin

g LS

I chi

ps a

nd h

ave

thre

e ty

pes.

–Th

e fir

st ty

pe is

ban

d-ga

p na

rrow

ing

in d

eple

tion

regi

on w

hen

high

re

vers

e vo

ltage

is a

pplie

d to

p-n

junc

tion

at d

rain

regi

ons.

The

seco

nd ty

pe is

pho

ton

emis

sion

from

MO

SFE

Tsan

d bi

pola

r tra

nsis

tors

by

aval

anch

e br

eakd

own

at th

e dr

ain

edge

and

re

com

bina

tion

of h

oles

and

ele

ctro

ns a

t the

bas

e re

gion

, re

spec

tivel

y.

–Th

e th

ird ty

pe is

term

inal

vol

tage

cha

nge

acco

rdin

g to

inpu

t sig

nals

.

2.S

timul

ated

Phy

sica

l Phe

nom

ena

–ar

e th

ose

indu

ced

in L

SI c

hips

by

som

e ph

ysic

al s

timul

atio

n.–

One

suc

h ph

ysic

al p

heno

men

on is

exc

itatio

n of

car

riers

in

depl

etio

n re

gion

by

lase

r bea

m ir

radi

atio

n an

d it

resu

lts in

ge

nera

tion

and

reco

mbi

natio

n (g

r) c

urre

nt fl

ow.

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

4

Phys

ical

Phe

nom

ena

in O

pera

ting

LSI

nMO

SFET

Bip

olar

Tr

sour

cedr

ain

gate

pn+

n+

OFF ON

base

colle

ctor

emitt

erp

nn+

EC EV

Ban

d-G

apC

hang

e

EC EV

Ava

lanc

heB

reak

dow

nEm

issi

onEm

issi

on

Rec

ombi

natio

n

Term

inal

Vol

tage

Cha

nge

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

5

Gen

erat

ion-

Rec

ombi

natio

n C

urre

nt F

low

by

Las

er B

eam

Irra

diat

ion

VG>

0

Dep

letio

nR

egio

n

g-r C

urre

ntLa

ser B

eam

Inve

rsio

nLa

yer

p-ty

pe

MO

S D

iode

pn-J

unct

ion

Dio

deR

ever

se B

iase

d

Dep

letio

n R

egio

n

EC EVEFg-

rC

urre

nt

Lase

r Bea

m

Ref

lect

edLa

ser B

eam

VG>

0

EC EF EV

g-r C

urre

nt

Dep

letio

n R

egio

n

Lase

r Bea

mIn

vers

ion 

Laye

r

p-ty

pen-

type

Dep

letio

n R

egio

ng-

r Cur

rent

Lase

r Bea

m

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

6

Typi

cal D

etec

tion

Met

hods

for P

hysi

cal P

heno

men

a in

LSI

AID

D

VDD

Prob

ing

Pad

Con

tact

or N

on-c

onta

ct P

robi

ng

Phot

on E

mis

sion

Si-S

ubst

rate

Phot

on D

etec

tion

G-r

cur

rent

mea

sure

men

tD

etec

tion

of re

flect

ed

lase

r bea

m

Irrad

iate

dLa

ser B

eam

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

7

Sam

ple

Prep

arat

ion

Tech

niqu

es fo

r Obs

erva

tion

Bit

Line

Cro

ss-S

ectio

ning

Phys

ical

Lay

er R

emov

alG

ate

ML6

ML5

ML4

ML3

ML2

ML1

Wet

Etc

hing

ML1

Laye

r

DR

AM

Flas

hM

emor

y

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

8

Sam

ple

Prep

arat

ion

Tech

niqu

es

for W

avef

orm

Mea

sure

men

ts

Fron

t-sid

ePa

d fo

rmat

ion

Die

lect

ric fi

lm

Bac

ksid

eSi

-sub

thin

ning

Si im

mer

sion

rem

oval

lens

form

atio

n

RM

S <

30nm

Si -s

ub40

0µm

R

R ~

300µ

mD

evic

e ar

ea

Bac

ksid

e

R/n

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

9

Mea

sure

men

t Met

hods

for E

lect

rical

Cha

ract

eris

tics

OB

IC

EBT

LVP

TRE

EOS

Nan

o-Pr

ober

Met

hod

Feat

ures

Mea

sure

men

t of “

H”

or “

L”st

ate

of n

odes

by

dete

ctin

g su

bstr

ate

curr

ent g

ener

ated

by

lase

r bea

m e

xpos

ure.

Wav

efor

m m

easu

rem

ent b

y de

tect

ing

amou

nt o

f sec

onda

ryel

ectr

ons

emitt

ed fr

om o

pera

ting

inte

rcon

nect

ions

.

Wav

efor

m m

easu

rem

ent b

y de

tect

ing

inte

nsity

of l

aser

be

am re

flect

ed a

t rev

erse

bia

sed

p-n

junc

tion

in d

evic

es.

Wav

efor

m m

easu

rem

ent b

y de

tect

ing

inte

nsity

of p

hoto

nem

issi

on fr

om o

pera

ting

devi

ces.

Wav

efor

m m

easu

rem

ent b

y de

tect

ing

pola

rizat

ion

of la

ser

beam

afte

r pas

s-th

roug

h a

bias

ed e

lect

ro-o

ptic

cry

stal

. M

easu

rem

ent o

f sta

tic d

evic

e ch

arac

teris

tics

usin

g fin

e m

echa

nica

l pro

bes

in v

acuu

m c

ham

ber w

ith S

EM.

OB

IC: O

ptic

al B

eam

Indu

ced

Cur

rent

, EB

T: E

lect

ron

Bea

m T

estin

g, L

VP: L

aser

Vol

tage

Pro

bing

,TR

E: T

ime

Res

olve

d Em

issi

on, E

OS:

Ele

ctro

-Opt

ic S

ampl

ing,

SEM

: Sca

nnin

g El

ectr

on M

icro

scop

y

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

10

p-w

ell

nMO

S

pMO

S

CLO

CK

OU

T

P-w

ell

pMO

S

VDD

nMO

S

GN

D

©

p+p+

n-Su

b

Dep

letio

n R

egio

n

Igr-

3Igr-

2Ig

r-1

n+p-

wel

l

(nM

OS)

(pM

OS)

Lase

r

GN

DVo

utVi

nVD

D

n+n+

p+

Lase

r

Nod

e St

ate

Obs

erva

tion

by O

BIC

(O

ptic

al B

eam

Indu

ced

Cur

rent

)

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

11

Wav

efor

m M

easu

rem

ent b

y EB

T (E

lect

ron

Bea

m T

estin

g)

Det

ecto

r

3V0V

Inci

dent

ele

ctro

nbe

am

Seco

ndar

y el

ectr

on

Inte

rcon

nect

ion

Rea

ctiv

e Io

n Et

ched

Sur

face

Mea

sure

d W

avef

orm

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

12

Wav

efor

m M

easu

rem

ent f

rom

bac

ksid

e by

LVP

(L

aser

Vol

tage

Pro

bing

)

Mea

sure

men

tpo

int

Bac

ksid

e Po

lishi

ng

Chi

p

Inne

r Lea

d

1 ps

Wav

efor

m

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

13

Det

ectio

n of

Pho

ton

Emis

sion

by

TRE

(Tim

e R

esol

ved

Emis

sion

)

VO

UT

VIN

VDD nM

OSF

ET

pMO

SFET

Emis

sion

Emis

sion

VIN

VOU

T

Tim

e (a

.u.)

IntensitynM

OSF

ETpM

OSF

ETPhoton

from

from

CM

OS

Inve

rter

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

14

Wav

efor

m M

easu

rem

ent b

y EO

-Sam

plin

gLa

ser

Elec

tric

Fiel

dEO C

ryst

alPa

d

Mirr

or

1µm

Wid

e ba

nd w

idth:~

60 G

Hz

EOC

ryst

alPola

rizat

ion

Cha

nge

Lase

r

Inte

nsity

Cha

nge

Pola

rizer

(Poc

kels

effe

ct)

Tim

e

Voltage

1 ns

60 mV

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

15

I-V C

hara

cter

istic

s M

easu

rem

ent b

y N

ano-

prob

er

Prob

e 2

Prob

e 1

Prob

e 3

Prob

e 4

5μm

Subs

trat

eG

ate

Dra

inSo

urce

Phot

ogra

ph o

f pro

bes

cont

actin

g to

via

plu

gsM

easu

red

I-V c

hara

cter

istic

s(A

: nor

mal

, B: f

ail)

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

16

Tam

perin

g Te

chni

ques

and

Rel

ated

Equ

ipm

ent

Dat

a re

adin

g fr

om R

OM

and

fla

sh m

emor

ies

FIB

, EB

T,LV

P,TR

E, E

OS

FIB

, OB

IC, S

EM

Cat

egor

ies

of a

ttack

Atta

ck T

echn

ique

s

Phys

ical

Str

uctu

re A

naly

sis

Chi

p re

mov

al fr

om IC

car

dsM

echa

nica

l sam

ple

trea

tmen

t

Cro

ss-s

ectio

nal a

naly

sis

Mem

ory

cell

stru

ctur

e an

alys

is

Circ

uit d

iagr

am a

naly

sis

Inte

rcon

nect

ion

laye

r lap

ping

w

ith s

tep

by s

tep

man

ner

Obs

erva

tion

of la

yout

pat

tern

sA

naly

sis

of c

ircui

t dia

gram

sfr

om la

yout

pat

tern

s

Ope

ratio

nal a

naly

sis

Pack

agin

g of

a re

mov

ed c

hip

Circ

uit r

erou

ting

base

d on

op

erat

iona

l circ

uit a

naly

sis

Sam

ple

prep

arat

ion

Ana

lysi

s of

chi

p ar

chite

ctur

e

Chi

p ar

chite

ctur

e an

alys

is

Equi

pmen

tH

ot p

late

,

FIB

, SEM

,

Cle

an b

ench

Lapp

ing

mac

hine

Mic

rosc

ope

(Eng

inee

rs)

Wire

bon

der,

Nan

o-pr

ober

Wav

efor

m m

easu

rem

ent

Mic

rosc

ope,

Cle

an b

ench

NC

-Grin

der,

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

17

4. A

Cas

e St

udy

of T

ampe

ring

Sens

or C

ircui

ts

–To

des

crib

e ho

w fa

ilure

ana

lysi

s te

chni

ques

can

be

used

for t

ampe

ring

IC c

ard

chip

s, w

e gi

ve s

ome

resu

lts

of a

n ex

perim

enta

l phy

sica

l atta

ck.

–In

gen

eral

, phy

sica

l atta

cks

may

hav

e tw

o ob

ject

ives

:

1.To

read

out

sec

ret d

ata

such

as

Crit

ical

Se

curit

y Pa

ram

eter

s fr

om th

e ch

ip.

2.To

alte

r the

func

tion

or d

ata

for s

ecur

ity

mec

hani

sms

impl

emen

ted

in th

e ch

ip.

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

18

Typi

cal F

unct

iona

l Blo

ck D

iagr

am o

f IC

Car

d C

hip

I/O CLK

RST VD

DG

ND

CPU

RO

M

Non

vola

tile

Mem

ory

RA

MSe

nsor

Cry

ptog

raph

icC

ircui

ts

Pow

er C

ontr

ol C

ircui

ts

I/OC

ircui

ts

Circ

uits

Stor

age

of G

loba

l

Stor

age

of A

ttack

Cry

ptog

raph

icD

ata

Proc

essi

ng

Mas

ter K

ey

His

tory

Prev

entio

n of

Ope

ratio

nU

nder

Irre

gula

r Con

ditio

n

: gen

eral

targ

et b

lock

s fo

r phy

sica

l atta

cks

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

19

An

Obs

erva

tion

on a

Tar

get C

hip

The

Shm

oo-P

lot

1.Th

e op

erat

iona

l ran

ge o

f su

pply

vol

tage

and

clo

ck

freq

uenc

yof

a ta

rget

IC c

ard

chip

was

mea

sure

d.

It is

som

ewha

t nar

row

erth

an

thos

e fo

r con

vent

iona

l LSI

ch

ips

fabr

icat

ed w

ith th

e sa

me

patte

rn ru

le.

Pass

Reg

ion

Fail

Reg

ion

Supp

ly V

olta

ge

Clock Frequency2.

Thi

s fa

ct s

tron

gly

sugg

ests

that

the

chip

is e

quip

ped

with

som

e se

nsin

g ci

rcui

try

for s

uppl

y vo

ltage

and

cl

ock

freq

uenc

yas

suc

h a

chip

ofte

n is

.

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

20

The

Ass

umpt

ion

–Th

e ta

rget

IC c

ard

chip

con

tain

s a

user

’s

pass

wor

d.

–A

n at

tack

er tr

ies

to fi

nd it

, by

exha

ustiv

e se

arch

, na

mel

y by

inpu

tting

eve

ry c

andi

date

pas

swor

d.

–H

owev

er, t

he h

isto

ry o

f bei

ng in

put w

rong

pa

ssw

ord

is re

cord

ed in

EEP

RO

M s

o th

at

the

IC c

ard

chip

may

be

forc

ed to

be

inac

tive

if th

e nu

mbe

r of a

ttack

tria

ls re

cord

ed in

EEP

RO

M

exce

eds

the

initi

ally

def

ined

thre

shol

d va

lue.

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

21

The

Atta

ck S

cena

rio

–Th

us a

pro

mis

ing

chal

leng

e of

the

atta

cker

may

be

dest

royi

ng th

e m

echa

nism

of w

ritin

g da

ta in

to

EEPR

OM

.

–If

the

supp

ly v

olta

ge m

ay b

e re

duce

d to

low

eno

ugh,

w

ritin

g da

ta in

to E

EPR

OM

may

no

long

er w

ork

and

the

atta

cks,

suc

h as

pas

swor

d ex

haus

tion,

cr

ypta

naly

sis,

or s

oftw

are

atta

cks,

can

be

done

re

peat

edly

.

–A

ttack

er tr

ies

to m

ake

the

supp

ly v

olta

ge s

enso

r ci

rcui

t ina

ctiv

e.

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

22

The

Flow

of E

xper

imen

tal P

hysi

cal A

ttack

Iden

tific

atio

n of

Tar

get S

enso

r Circ

uit P

ositi

ons

Targ

et S

enso

r Circ

uit D

iagr

am A

naly

sis

Inac

tivat

ion

of T

arge

t Sen

sor C

ircui

t by

Rer

outin

g

Ope

ratio

nal C

hara

cter

izat

ion

of IC

Car

d C

hip

Rea

d Se

cret

Dat

a

Rem

oval

and

Pac

kagi

ng o

f IC

Car

d C

hip

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

23

Rem

oval

and

Pac

kagi

ng o

f IC

Car

d C

hip

Chi

p

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

24

Iden

tific

atio

n of

Tar

get S

enso

r Circ

uit P

ositi

ons

Nor

mal

ope

ratio

n co

nditi

onEm

issi

on s

ites

incr

ease

due

tofa

ilure

. Em

issi

on M

icro

scop

y is

use

ful t

o id

entif

y se

nsor

circ

uits

.

(To

keep

the

secu

rity

of th

e re

al ta

rget

chi

p, th

e ab

ove

and

next

illus

trat

ive

pict

ures

are

the

resu

lts o

btai

ned

by e

xper

imen

ts o

n ot

her c

hips

.)

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

25

Targ

et S

enso

r Circ

uit D

iagr

am A

naly

sis

ML2

ML1

Gat

e la

yer

Out

put

Obs

erva

tion

Con

stru

ctio

nof

circ

uit

diag

ram

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

26

Rer

outin

g to

Mak

e Se

nsor

Circ

uit I

nact

ive

Out

put l

ine

Cut

poi

nt

Out

put l

ine

was

cut

and

con

nect

ed to

Vss

line

.

New

ly fo

rmed

line

by F

IBC

ut p

oint

New

ly fo

rmed

Line

by

FIB

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

27

Shm

oo-P

loto

f IC

Car

d C

hip

Bef

ore

and

Afte

rA

ltera

tion

of S

enso

r Circ

uits

for

Low

Sup

ply

Volta

ge a

nd L

ow C

lock

Fre

quen

cy

Pass

Reg

ion

Fail

Reg

ion

Supp

ly V

olta

ge

Clock Frequency

(Initi

al)

Afte

r alte

ratio

n

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

28

Supe

riorit

y th

e Li

ght E

mis

sion

Imag

e (L

EI) o

ver

the

Volta

ge C

ontr

ast I

mag

e (V

CI)

of E

B T

estin

g

Con

tras

t im

age

diffe

renc

ebe

twee

n op

erat

ing

cond

ition

of A

and

B.

(IFA

: Im

age

Faul

t Ana

lysi

s)

Emis

sion

imag

e di

ffere

nce

betw

een

oper

atin

g co

nditi

onof

A a

nd B

.

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

29

Ana

lyze

d C

ircui

ts A

rea

is L

ess

Than

2%

of

the

Are

a of

the

Chi

p Ex

clud

ing

the

Mem

ory

Ana

log

and

Dig

ital C

ircui

t Are

a

Ana

lyze

d Se

nsor

Circ

uit A

rea

Mem

ory

Are

a

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

30

5. A

Ten

tativ

e C

lass

ifica

tion

of S

ecur

ity L

evel

s

–Ba

sed

on o

ur e

xper

ienc

e in

failu

re a

naly

sis,

we

sugg

est

a te

ntat

ive

way

of c

lass

ifyin

g se

curit

y le

vels

of L

SI c

hips

.

–Th

e se

curit

y le

vels

may

be

clas

sifie

d by

usi

ng

(1)t

he re

quire

d sk

ill ra

nk o

f the

atta

cker

s or

an

alys

ts,

and

(2)t

he n

eces

sary

failu

re a

naly

sis

equi

pmen

t an

d its

cos

t to

atta

ck th

e ch

ips.

–O

ur a

ttem

pt o

f suc

h a

clas

sific

atio

n is

not

yet

mat

ured

an

d sh

ould

be

impr

oved

bas

ed o

n m

uch

disc

ussi

on.

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

31

Def

initi

on o

f Ski

ll R

anks

LSI a

rchi

tect

ure

Logi

c an

d an

alog

circ

uit

oper

atio

n

Mem

ory

circ

uit o

pera

tion

Mem

ory

cell

stru

ctur

e

Proc

ess

tech

nolo

gy

Mea

sure

men

t tec

hnol

ogy

Expe

rienc

e (m

inim

um y

ears

)

Skill

Ran

kSk

ill c

ompo

nent

Failu

re a

naly

sis

tech

nolo

gy

Expe

rtcl

ass

clas

scl

ass

clas

scl

ass

1st

2nd

3rd

4th

5th 3

58

10

13

15

clas

s

α: e

xper

t, β

: pro

ficie

nt, γ

: suf

ficie

nt

α α α α α α

α

α

α ααα α

α α α α

ββ β β

β β β ββ

β β β

γ

γγ

γ

γ γ γ γ

α> β

> γ

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

32

Tent

ativ

e C

andi

date

of F

ive

Secu

rity

Leve

ls o

f LSI

Chi

ps

Bas

ed o

n Fa

ilure

Ana

lysi

s Eq

uipm

ent a

nd S

kills

of A

naly

st

“Bey

ond”

mea

ns th

e le

vel n

on-a

ttack

able

by

toda

y’s

FA

tech

nolo

gies

.

Skill

rank

Nec

essa

ry F

A e

quip

men

tSe

curit

yle

vel

tota

l cos

t[M

$]

A (

+2)

C (

0 )

D (

-1)

E (-

2)

B (

+1)

Expe

rt

1st

2nd

3rd

4th,

5th

6.5+

3.5

10+6

2.5+

4

Nan

o-pr

ober

LVP

TRE

Cle

an b

ench

EOS

LEM

/CC

D

LEM

/MC

T

EBT

SEM

OB

IC

Hot

-pla

te

Wire

-bon

derFI

BLa

ppin

g M

achi

ne

Elec

tric

al m

easu

rem

ent

syst

em

Rev

erse

eng

inee

ring

softw

are

0.5+

2

0.5

Equi

pmen

t

Bey

ond

Unk

now

n (to

day)

??

Cur

rent

ave

rage

failu

re

anal

ysis

cap

abili

ty m

ay

corr

espo

nd to

“le

vel C

”.

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

33

6. S

umm

ary

–W

e ha

ve d

escr

ibed

rela

tions

hips

bet

wee

n LS

I tam

per

resi

stan

ce a

nd F

A te

chni

ques

.

–Ta

mpe

r res

ista

nce

of L

SI c

hips

aga

inst

phy

sica

lat

tack

s sh

ould

be

eval

uate

d or

test

ed o

n th

e ba

sis

of

late

st te

chno

logi

es.

–To

faci

litat

e an

und

erst

andi

ng o

f the

leve

l of t

oday

’s

failu

re a

naly

sis

tech

niqu

es w

e ha

ve d

emon

stra

ted

an

inac

tivat

ion

of s

enso

r circ

uits

whe

re e

mis

sion

m

icro

scop

y pl

ays

an im

porta

nt ro

ll.

–Th

en w

e ha

ve g

iven

a te

ntat

ive

way

of c

lass

ifyin

g th

e se

curit

y le

vels

for L

SI c

hips

with

resp

ect t

o th

e re

quire

d eq

uipm

ent a

nd th

e re

quire

d sk

ills o

f atta

cker

s.

Mat

sum

oto-

Nak

ajim

a-Sh

ibat

a-Ya

mag

ishi

, Phy

sica

l Sec

urity

Tes

ting

Wor

ksho

p, S

ept.

2005

34

Ref

eren

ces

[1] S

. Nak

ajim

a an

d T.

Tak

eda,

"Fa

ilure

ana

lysi

s in

hal

fmic

ron

and

quar

term

icro

ner

as, "

Pr

ocee

ding

of t

he 6

th E

urop

ean

Sym

posi

um o

n R

elia

bilit

y of

Ele

ctro

n D

evic

es,

Failu

re P

hysi

cs a

nd A

naly

sis

(ESR

EF 9

5), p

p. 2

73-2

80, 1

995.

[2] S

. Nak

ajim

a, T

. Uek

i, Y.

Shio

noya

, K.M

afun

e, N

.Kuj

i, S.

Nak

amur

a, Y

.Kom

ine

and

T. T

aked

a, "

Cur

rent

sta

tus

of fa

ilure

ana

lysi

s fo

rULS

Is, "

Mic

roel

ectr

onic

s R

elia

bilit

y,Vo

l. 38

, pp.

136

9-13

77, 1

998.

[3] S

. Nak

ajim

a, S

. Nak

amur

a, K

.Kuj

i, T.

Uek

i, T.

Ajio

kaan

d T.

Sak

ai, "

Con

stru

ctio

n of

a

cost

-effe

ctiv

e fa

ilure

ana

lysi

s se

rvic

e ne

twor

k ---

Mic

roel

ectr

onic

failu

re

anal

ysis

ser

vice

in J

apan

," M

icro

elec

tron

ics

Rel

iabi

lity,

Vol

. 42,

pp.

511-

521,

200

2.

[4] Y

. Mits

ui, e

t al,

"Phy

sica

l and

che

mic

al a

naly

tical

inst

rum

ent f

or fa

ilure

ana

lyse

sin

G-B

it de

vice

s, "

Tech

nica

l Dig

est o

f Int

erna

tiona

l Ele

ctro

n D

evic

es M

eetin

g,

pp.3

29-3

32, 1

998.

[5] C

. Has

him

oto,

T. T

akiz

awa,

S. N

akaj

ima,

M. S

hina

gaw

a an

d T.

Nag

atsu

ma,

"O

bser

vatio

n of

the

inte

rnal

wav

efor

ms

in h

igh-

spee

d hi

gh-d

ensi

tyLS

Isus

ing

an E

OS

prob

er, "

Mic

roel

ectr

onic

s R

elia

bilit

y, V

ol. 4

1, p

p. 1

203-

1209

, 200

1.[6

] M. K

. Mc

Man

us, J

. A.K

ash,

S. E

. Ste

en, S

.Pol

onsk

y, J

. C. T

sang

, D. R

.Kne

bela

nd

W.H

uott,

"PIC

A: B

acks

ide

failu

re a

naly

sis

of C

MO

S ci

rcui

ts u

sing

Pic

osec

ond

Imag

ing

Circ

uit A

naly

sis,

" M

icro

elec

tron

ics

Rel

iabi

lity,

Vol

. 40,

pp.

135

3-13

58, 2

000.

[7

] A.T

osi,

F.St

ella

ri, F

.Zap

paan

d S.

Cov

a, "

Bac

ksid

e Fl

ip-C

hip

test

ing

by m

eans

of

high

-ban

dwid

th lu

min

esce

nce

dete

ctio

n,"

Mic

roel

ectr

onic

s R

elia

bilit

y,Vo

l. 43

, pp

. 166

9-16

74, 2

003.