rur020n02 : transistorsno copying or reproduction of this document, in part or in whole, is...

Datasheet

www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

RUR020N02 Nch 20V 2A Power MOSFET

lOutline

VDSS 20VRDS(on) (Max.) 105mW

ID 2APD 1W

lFeatures lInner circuit

1) Low on - resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (TSMT3).

4) Pb-free lead plating ; RoHS compliant

lPackaging specifications

Type

Packaging Taping

lApplication Reel size (mm) 180

Road SW Tape width (mm) 8

Basic ordering unit (pcs) 3,000

Drain - Source voltage VDSS 20 V

Taping code TL

Marking XK

lAbsolute maximum ratings(Ta = 25°C)

Parameter Symbol Value Unit

Continuous drain current ID *1

2 A

Pulsed drain current ID,pulse *2

6 A

Gate - Source voltage VGSS 10 V

PD *3 1.0 W

Range of storage temperature Tstg -55 to +150 °C

PD *4 0.54 W

Power dissipation

Junction temperature Tj 150 °C

(1)

(2)

(3)

∗1 ESD PROTECTION DIODE ∗2 BODY DIODE

(1) Gate (2) Source (3) Drain

TSMT3

1/11 2012.06 - Rev.B


Data SheetRUR020N02

*1 Limited only by maximum temperature allowed.

*2 Pw 10ms, Duty cycle 1%

*3 Mounted on a ceramic board (30×30×0.8mm)

*4 Mounted on a FR4 (12×20×0.8mm)

lThermal resistance

Parameter SymbolValues

UnitMin. Typ. Max.

Thermal resistance, junction - ambient RthJA *4 - - 231 °C/W

Thermal resistance, junction - ambient RthJA *3 - - 125 °C/W

lElectrical characteristics(Ta = 25°C)

Parameter Symbol ConditionsValues

UnitMin. Typ. Max.

V

Breakdown voltagetemperature coefficient

ΔV(BR)DSS

ΔTj

ID = 1mAreferenced to 25°C

- 20 - mV/°C

Drain - Source breakdownvoltage

V(BR)DSS VGS = 0V, ID = 1mA 20 - -

mA

Gate - Source leakage current IGSS VGS = 10V, VDS = 0V - - 10 mA

Zero gate voltage drain current IDSS VDS = 20V, VGS = 0V - - 1

V

Gate threshold voltagetemperature coefficient

ΔV(GS)th

ΔTj

ID = 1mAreferenced to 25°C

- -1.9 - mV/°C

Gate threshold voltage VGS (th) VDS = 10V, ID = 1mA 0.3 - 1.0

130 185

VGS=1.5V, ID=0.4A

Static drain - sourceon - state resistance RDS(on)

*5

VGS=4.5V, ID=2A - 75 105

- 170 240

VGS=4.5V, ID=2A, Tj=125°C

W

Transconductance gfs *5 VDS = 10V, ID = 2A 1.8 4.2 - S

- 120 170

Gate input resistannce RG f = 1MHz, open drain - 24 -

mW

VGS=2.5V, ID=2A - 95 135

VGS=1.8V, ID=1A -

2/11 2012.06 - Rev.B


Data SheetRUR020N02

*5 Pulsed

lElectrical characteristics(Ta = 25°C)


UnitMin. Typ. Max.

pFOutput capacitance Coss VDS = 10V - 45 -

Reverse transfer capacitance Crss f = 1MHz

Input capacitance Ciss VGS = 0V - 180 -

- 25 -

UnitMin. Typ. Max.

Turn - on delay time td(on) *5 VDD ⋍ 10V, VGS = 4.5V - 6 -

nsRise time tr

*5 ID = 1A - 17 -

Turn - off delay time td(off) *5 RL = 10W - 30 -

Fall time

-Total gate charge Qg *5

-

lGate Charge characteristics(Ta = 25°C)


tf *5 RG = 10W - 30

Max.

- 0.6 -

Gate - Drain charge Qgd *5 - 0.4 -

lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)


UnitMin. Typ.

nCGate - Source charge Qgs

*5VDD ⋍ 10V, ID = 2AVGS = 4.5V

VDD ⋍ 10V, ID = 2AVGS = 4.5V - 2.0

A

Forward voltage VSD *5 VGS = 0V, Is = 2A - - 1.2 V

Inverse diode continuous,forward current IS *1 Ta = 25°C - - 0.8

3/11 2012.06 - Rev.B


Data SheetRUR020N02

lElectrical characteristic curves

0.1

1

10

100

1000

0.0001 0.01 1 100

Ta=25ºC Single Pulse

Fig.1 Power Dissipation Derating Curve

Pow

er D

issi

patio

n :

PD/P

D m

ax. [

%]

Junction Temperature : Tj [°C]

Fig.2 Maximum Safe Operating Area

Dra

in C

urre

nt :

I D [A

]

Drain - Source Voltage : VDS [V]

Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width

Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e : r

(t)

Pulse Width : PW [s]

Fig.4 Single Pulse Maxmum Power dissipation

Peak

Tra

nsie

nt P

ower

: P

(W)

Pulse Width : PW [s]

0

20

40

60

80

100

120

0 50 100 150 2000.01

0.1

1

10

0.1 1 10 100

Operation in this area is limited by RDS(on)

(VGS = 4.5V )

PW = 100ms PW = 1ms PW = 10ms

DC Operation

Ta=25ºC Single Pulse Mounted on a ceramic board. (30mm × 30mm × 0.8mm)

0.001

0.01

0.1

1

10

0.0001 0.01 1 100

Ta=25ºC Single Pulse

Rth(ch-a)=125ºC/W Rth(ch-a)(t)=r(t)×Rth(ch-a) Mounted on ceramic board (30mm × 30mm × 0.8mm)

top D=1 D=0.5 D=0.1 D=0.05 D=0.01 bottom Signle

4/11 2012.06 - Rev.B


Data SheetRUR020N02


Fig.5 Typical Output Characteristics(I)

Dra

in C

urre

nt :

I D [A

]


Fig.6 Typical Output Characteristics(II)


Dra

in C

urre

nt :

I D [A

]

0

1

2

3

4

0 0.2 0.4 0.6 0.8 1

VGS= 1.2V

VGS= 1.3V

VGS= 1.5V

VGS= 1.8V

VGS= 10V VGS= 4.5V VGS= 2.5V

Ta=25ºC Pulsed

0

1

2

3

4

0 2 4 6 8 10

Ta=25ºC Pulsed VGS= 4.5V

VGS= 2.5V VGS= 1.8V

VGS= 1.2V

VGS= 1.3V

VGS= 1.5V

5/11 2012.06 - Rev.B


Data SheetRUR020N02


Fig.7 Breakdown Voltage vs. Junction Temperature

Dra

in -

Sour

ce B

reak

dow

n Vo

ltage

: V

(BR

)DSS

[V]


Fig.8 Typical Transfer Characteristics

Gate - Source Voltage : VGS [V]

Fig.9 Gate Threshold Voltage vs. Junction Temperature

Gat

e Th

resh

old

Volta

ge :

VG

S(th

) [V]


Fig.10 Transconductance vs. Drain Current

Tran

scon

duct

ance

: g f

s [S]

Drain Current : ID [A]

Dra

in C

urre

nt :

I D [A

]

0

20

40

60

-50 0 50 100 150

VGS=0V ID=1mA pulsed

0

0.2

0.4

0.6

0.8

1

-50 0 50 100 150

VDS=10V ID=1mA pulsed

0.001

0.01

0.1

1

10

0 0.5 1 1.5 2

VDS= 10V Pulsed

Ta= 125ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC

0.1

1

10

0.01 0.1 1 10

VDS= 10V Pulsed

Ta= -25ºC Ta=25ºC Ta=75ºC Ta=125ºC

6/11 2012.06 - Rev.B


Data SheetRUR020N02


Fig.11 Drain CurrentDerating Curve

Dra

in C

urre

nt D

issi

patio

n

: ID/I D

max

. (%

)

Junction Temperature : Tj [ºC]

Fig.13 Static Drain - Source On - State Resistance vs. Drain Current(I)

Stat

ic D

rain

- So

urce

On-

Stat

e R

esis

tanc

e

: RD

S(on

) [m

W]

Junction Temperature : Tj [ºC]

Fig.14 Static Drain - Source On - State Resistance vs. Junction Temperature

Stat

ic D

rain

- So

urce

On-

Stat

e R

esis

tanc

e

: RD

S(on

) [m

W]


Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage

Stat

ic D

rain

- So

urce

On-

Stat

e R

esis

tanc

e

: RD

S(on

) [m

W]

Gate - Source Voltage : VGS [V]

0

0.2

0.4

0.6

0.8

1

1.2

-25 0 25 50 75 100 125 150

0

50

100

150

-50 -25 0 25 50 75 100 125 150

VGS=4.5V ID=2.0A pulsed

0

50

100

150

200

250

300

0 2 4 6 8 10

ID= 1.0A

ID= 2.0A

Ta= 25ºC Pulsed

10

100

1000

0.01 0.1 1 10

VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.5V

.

Ta= 25ºC Pulsed

7/11 2012.06 - Rev.B


Data SheetRUR020N02


Fig.15 Static Drain-Source On-State Resistance vs. Drain Current(II)

Stat

ic D

rain

- So

urce

On-

Stat

e R

esis

tanc

e

RD

S(on

) [m

W]


Fig.16 Static Drain - Source On - State Resistance vs. Drain Current(III)

Stat

ic D

rain

- So

urce

On-

Stat

e R

esis

tanc

e

RD

S(on

) [m

W]


Fig.17 Static Drain - Source On - State Resistance vs. Drain Current(IV)

Stat

ic D

rain

- So

urce

On-

Stat

e R

esis

tanc

e

: RD

S(on

) [m

W]


10

100

1000

0.01 0.1 1 10

VGS= 4.5V Pulsed

Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC

10

100

1000

0.01 0.1 1 10

VGS= 2.5V Pulsed


10

100

1000

0.01 0.1 1 10

VGS= 1.8V Pulsed


8/11 2012.06 - Rev.B


Data SheetRUR020N02


Fig.18 Typical Capacitance vs. Drain - Source Voltage

Cap

acita

nce

: C [p

F]


Fig.20 Dynamic Input Characteristics

Gat

e - S

ourc

e Vo

ltage

: V G

S [V

]

Total Gate Charge : Qg [nC]

Fig.19 Switching Characteristics

Switc

hing

Tim

e : t

[ns]


Fig.21 Source Current vs. Source Drain Voltage

Sour

ce C

urre

nt :

I S [A

]

Source-Drain Voltage : VSD [V]

10

100

1000

0.01 0.1 1 10 100

Ciss

Coss

Crss Ta=25ºC f=1MHz VGS=0V

0.01

0.1

1

10

0 0.5 1 1.5

VGS=0V Pulsed


0

1

2

3

4

5

0 0.5 1 1.5 2 2.5 3

Ta=25ºC VDD= 10V ID= 2A RG=10W Pulsed

1

10

100

1000

0.01 0.1 1 10

td(on)

td(off)

Ta=25ºC VDD= 10V VGS=4.5V RG=10W Pulsed

tr

tf

9/11 2012.06 - Rev.B


Data SheetRUR020N02

lMeasurement circuits

Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform

10/11 2012.06 - Rev.B


Data SheetRUR020N02

lDimensions (Unit : mm)

Dimension in mm/inches

TSMT3

Patterm of terminal position areas

D

E

E

Lp

L1

A3

c

A

A1

A2

S

A

b2

l1

Q

e

e1

H

e bx S A

MIN MAX MIN MAXA - 1.00 - 0.039A1 0.00 0.10 0 0.004A2 0.75 0.95 0.03 0.037A3b 0.35 0.50 0.014 0.02c 0.10 0.26 0.004 0.01D 2.80 3.00 0.11 0.118E 1.50 1.80 0.059 0.071eHE 2.60 3.00 0.102 0.118L1 0.30 0.60 0.012 0.024Lp 0.40 0.70 0.016 0.028Q 0.05 0.25 0.002 0.01x - 0.20 - 0.008

MIN MAX MIN MAXe1b2 0.70 - 0.028l1 - 0.90 - 0.035

0.25 0.01

DIMMILIMETERS INCHES

2.10 0.08

DIMMILIMETERS INCHES

0.95 0.04

11/11 2012.06 - Rev.B

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