research fueled by: international symposium high performance computing in nano-spintronics hamburg,...
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Research fueled by:
International Symposium High Performance Computing in Nano-SpintronicsHamburg, November 30th, 2011
Transport theory and simulations in hybrid structures:the need for a bottom-up approach in new semiconductor spintronic systems
JAIRO SINOVATexas A&M University
Institute of Physics ASCR
Hitachi CambridgeJoerg Wünderlich, A. Irvine, et al
Institute of Physics ASCRTomas Jungwirth, Vít Novák, Karel Vyborny, et al
Hamburg UniversityJan Jacob, Bodo Krause-Kyora, et al
2International Symposium High Performance Computing in Nano-Spintronics, HamburgSinova
I. Introduction: using the dual personality of the electron•Internal coupling of charge and spin: origin and present use
II.Spintronic devices and the need to understand them microscopicallyIII. Spin injection Hall effect FET: a new paradigm in exploiting SO coupling•Spin based FET: old and new paradigm in charge-spin transport II. Spin filters in InAs nano-wiresIII. A bottom to top approach: from mesoscopic to microscopic
I.Why is it important to approach the problem from the mesoscopic regimeV. Theoretical tools of the mesoscopic world:
•Landauer-Büttiker (coherent regime)•Non-Equilibrium Green’s Function approach: quantum Boltzmann Eq.•Beyond coherent transport: the basic master equation of the non-equilibrium density matrix
VI. Computational Challenges of NEGF approach
Transport theory and simulations in hybrid structures:
the need for a bottom-up approach in new spintronic systems
Transport theory and simulations in hybrid structures:
the need for a bottom-up approach in new spintronic systems
3International Symposium High Performance Computing in Nano-Spintronics, HamburgSinova
The electron: the key character with dual personalities
CHARGECHARGEEasy to manipulate: Coulomb interaction
SPIN 1/2SPIN 1/2Makes the electron antisocial: a fermion
quantum mechanics
E=p2/2mE→ iħ d/dtp→ -iħ d/dr
““Classical” external manipulation of charge & spinClassical” external manipulation of charge & spin
special relativity
E2/c2=p2+m2c2
(E=mc2 for p=0)
+ particles/antiparticles & spin
Dirac equation=
4International Symposium High Performance Computing in Nano-Spintronics, HamburgSinova
Using charge and spin in information technology
HIGH tunablity of electronic transportproperties the key to FET success in processing technology
substrate
semiconductor
insulatorS Dgate
Vg >0
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