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PSMN5R6-100PSN-channel 100 V 5.6 mΩ standard level MOSFET in TO22030 November 2012 Product data sheet

1. Product profile

1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 °C. Thisproduct is designed and qualified for use in a wide range of industrial, communicationsand domestic equipment.

1.2 Features and benefits• High efficiency due to low switching and conduction losses• Improved dynamic avalanche performance• Suitable for standard level gate drive sources

1.3 Applications• DC-to-DC converters• Load switching• Motor control• Server power supplies

1.4 Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V

ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 1 [1] - - 100 A

Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 306 W

Static characteristics

RDSon drain-source on-stateresistance

VGS = 10 V; ID = 25 A; Tj = 25 °C;Fig. 11; Fig. 12

- 4.3 5.6 mΩ

Dynamic characteristics

QGD gate-drain charge - 43 - nC

QG(tot) total gate charge

VGS = 10 V; ID = 80 A; VDS = 50 V;Fig. 13; Fig. 14 - 141 - nC

Avalanche Ruggedness

EDS(AL)S non-repetitive drain-source avalancheenergy

VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;Vsup ≤ 100 V; RGS = 50 Ω; unclamped

- - 469 mJ

© Nexperia B.V. 2017. All rights reserved

Nexperia PSMN5R6-100PSN-channel 100 V 5.6 mΩ standard level MOSFET in TO220

PSMN5R6-100PS All information provided in this document is subject to legal disclaimers.

Product data sheet 30 November 2012 2 / 13

[1] Continious current limited by package.

2. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol

1 G gate

2 D drain

3 S source

mb D mounting base; connected todrain

1 2

mb

3

TO-220AB (SOT78)

S

D

G

mbb076

3. Ordering informationTable 3. Ordering information

PackageType number

Name Description Version

PSMN5R6-100PS TO-220AB plastic single-ended package; heatsink mounted; 1 mountinghole; 3-lead TO-220AB

SOT78

4. MarkingTable 4. Marking codesType number Marking code

PSMN5R6-100PS PSMN5R6-100PS

5. Limiting valuesTable 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 100 V

VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 100 V

VGS gate-source voltage -20 20 V

VGS = 10 V; Tj = 100 °C; Fig. 1 - 95 AID drain current

VGS = 10 V; Tmb = 25 °C; Fig. 1 [1] - 100 A





Symbol Parameter Conditions Min Max Unit

IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 539 A

Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 306 W

Tstg storage temperature -55 175 °C

Tj junction temperature -55 175 °C

Source-drain diode

IS source current Tmb = 25 °C [1] - 100 A

ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 539 A

Avalanche Ruggedness

EDS(AL)S non-repetitive drain-sourceavalanche energy

VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;Vsup ≤ 100 V; RGS = 50 Ω; unclamped

- 469 mJ

[1] Continious current limited by package.

003aad683

0

50

100

150

0 50 100 150 200Tmb (°C)

ID(A)

(1)

Fig. 1. Continuous drain current as a function ofmounting base temperature

Tmb (°C)0 20015050 100

03aa16

40

80

120

Pder(%)

0

Fig. 2. Normalized total power dissipation as afunction of mounting base temperature





003aad702

10- 1

1

10

102

103

1 10 102 103VDS (V)

ID(A)

DC

Limit RDSon = VDS / ID

100 ms10 ms1 ms

100 µs

tp =10 µs

Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

6. Thermal characteristicsTable 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistancefrom junction tomounting base

Fig. 4 - 0.3 0.49 K/W

003aad684

single shot

0.2

0.1

0.05

0.02

10- 1

1

1tp (s)

Zth(K/W)

10- 2

10- 3

10- 6 10- 5 10- 4 10- 3 10- 2 10- 1

δ = 0.5

tp

tp

T

P

t

Tδ =

Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration





7. CharacteristicsTable 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit

Static characteristics

ID = 250 µA; VGS = 0 V; Tj = 25 °C 100 - - VV(BR)DSS drain-sourcebreakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 90 - - V

VGS(th) gate-source thresholdvoltage

ID = 1 mA; VDS = VGS; Tj = 25 °C;Fig. 8; Fig. 9

2 3 4 V

ID = 1 mA; VDS = VGS; Tj = 175 °C;Fig. 9

1 - - VVGSth gate-source thresholdvoltage

ID = 1 mA; VDS = VGS; Tj = -55 °C;Fig. 9

- - 4.6 V

VDS = 100 V; VGS = 0 V; Tj = 25 °C - 0.02 10 µAIDSS drain leakage current

VDS = 100 V; VGS = 0 V; Tj = 175 °C - - 500 µA

VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nAIGSS gate leakage current

VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA

VGS = 10 V; ID = 25 A; Tj = 175 °C;Fig. 10

- - 15.7 mΩRDSon drain-source on-stateresistance

VGS = 10 V; ID = 25 A; Tj = 25 °C;Fig. 11; Fig. 12

- 4.3 5.6 mΩ

RG gate resistance f = 1 MHz - 0.97 - Ω

Dynamic characteristics

QG(tot) total gate charge - 141 - nC

QGS gate-source charge - 36 - nC

QGD gate-drain charge

ID = 80 A; VDS = 50 V; VGS = 10 V;Fig. 13; Fig. 14

- 43 - nC

Ciss input capacitance VDS = 50 V; VGS = 0 V; f = 1 MHz;Tj = 25 °C; Fig. 15; Fig. 16

- 8061 - pF

Coss output capacitance VDS = 50 V; VGS = 0 V; f = 1 MHz;Tj = 25 °C; Fig. 15

- 561 - pF

Crss reverse transfercapacitance

VDS = 50 V; VGS = 0 V; f = 1 MHz;Tj = 25 °C; Fig. 15; Fig. 16

- 330 - pF

td(on) turn-on delay time - 31 - ns

tr rise time - 46 - ns

td(off) turn-off delay time - 83 - ns

tf fall time

VDS = 50 V; RL = 0.6 Ω; VGS = 10 V;RG(ext) = 1.5 Ω

- 34 - ns

Source-drain diode

VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.79 1.2 V





Symbol Parameter Conditions Min Typ Max Unit

trr reverse recovery time - 67 - ns

Qr recovered charge

IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;VDS = 50 V - 182 - nC

003aad685

0

40

80

120

160

0 0.5 1 1.5 2VDS (V)

ID(A)

68

5

4.5

5.5

VGS (V) = 4

10

Fig. 5. Output characteristics: drain current as afunction of drain-source voltage; typical values

003aad692

0

50

100

150

200

250

0 20 40 60 80 100ID (A)

gfs(S)

Fig. 6. Forward transconductance as a function ofdrain current; typical values

003aad687

0

40

80

120

160

0 2 4 6VGS (V)

ID(A)

Tj = 175 °C Tj = 25 °C

Fig. 7. Transfer characteristics: drain current as afunction of gate-source voltage; typical values

03aa35

VGS (V)0 642

10- 4

10- 5

10- 2

10- 3

10- 1

ID(A)

10- 6

min typ max

Fig. 8. Sub-threshold drain current as a function ofgate-source voltage





Tj (°C)- 60 1801200 60

003aad280

2

3

1

4

5VGS(th)

(V)

0

max

typ

min

Fig. 9. Gate-source threshold voltage as a function ofjunction temperature

003aad774

0

0.8

1.6

2.4

3.2

-60 0 60 120 180Tj (°C)

a

Fig. 10. Normalized drain-source on-state resistancefactor as a function of junction temperature

003aad688

0

2

4

6

8

10

4 8 12 16 20VGS (V)

RDSon(mΩ)

Fig. 11. Drain-source on-state resistance as a functionof gate-source voltage; typical values

003aad689

2

4

6

8

10

0 20 40 60 80 100ID (A)

RDSonVGS (V) = 4.5

5

158

5.5

10

6

(mΩ)

Fig. 12. Drain-source on-state resistance as a functionof drain current; typical values





003aad694

0

2

4

6

8

10

0 40 80 120 160QG (nC)

VGS(V)

VDS = 20 V VDS = 50 V

Fig. 13. Gate-source voltage as a function of gatecharge; typical values

003aaa508

VGS

VGS(th)

QGS1 QGS2

QGD

VDS

QG(tot)

ID

QGS

VGS(pl)

Fig. 14. Gate charge waveform definitions

003aad691

102

103

104

10- 1 1 10 102VDS (V)

C(pF)

Ciss

105

Coss

Crss

Fig. 15. Input, output and reverse transfer capacitancesas a function of drain-source voltage; typicalvalues

003aad686

0

4000

8000

12000

16000

0 4 8 12VGS (V)

C(pF) Ciss

Crss

Fig. 16. Input and reverse transfer capacitances as afunction of gate-source voltage, typical values





003aad693

0

40

80

120

160

200

0 0.3 0.6 0.9 1.2VSD (V)

IS(A)

Tj = 175 °C Tj = 25 °C

Fig. 17. Source current as a function of source-drain voltage; typical values





8. Package outline

REFERENCESOUTLINEVERSION

EUROPEANPROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT78 SC-463-lead TO-220AB

SOT78

08-04-2308-06-13

Notes1. Lead shoulder designs may vary.2. Dimension includes excess dambar.

UNIT A

mm 4.74.1

1.401.25

0.90.6

0.70.4

16.015.2

6.65.9

10.39.7

15.012.8

3.302.79

3.83.5

A1

DIMENSIONS (mm are the original dimensions)

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

0 5 10 mm

scale

b b1(2)

1.61.0

c D

1.31.0

b2(2) D1 E e

2.54

L L1(1) L2(1)max.

3.0

p q

3.02.7

Q

2.62.2

D

D1

q

p

L

1 2 3

L1(1)

b1(2)

(3×)

b2(2)

(2×)

e e

b(3×)

AE

A1

c

Q

L2(1)

mountingbase

Fig. 18. Package outline TO-220AB (SOT78)





9. Legal information

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Productstatus [3]

Definition

Objective[short] datasheet

Development This document contains data fromthe objective specification for productdevelopment.

Preliminary[short] datasheet

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Product[short] datasheet

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[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have

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10. Contents1 Product profile ....................................................... 11.1 General description .............................................. 11.2 Features and benefits ...........................................11.3 Applications .......................................................... 11.4 Quick reference data ............................................ 12 Pinning information ...............................................23 Ordering information .............................................24 Marking ................................................................... 25 Limiting values .......................................................26 Thermal characteristics .........................................47 Characteristics .......................................................58 Package outline ................................................... 109 Legal information .................................................119.1 Data sheet status ............................................... 119.2 Definitions ...........................................................119.3 Disclaimers .........................................................119.4 Trademarks ........................................................ 12

© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 30 November 2012