project 4.8-a thin films of heusler compounds with high

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Topological insulators Claudia FELSER, Binghai YAN, Shekkar Chandra, Stas Chadov, Lukas Müchler, Martin Jansen, Jürgen Kübler, Shou-Chen Zhang, Xiaoliang Qi, Yulin Chen www.superconductivity.de

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Page 1: Project 4.8-A Thin films of Heusler compounds with high

Topological insulators

Claudia FELSER, Binghai YAN,

Shekkar Chandra, Stas Chadov, Lukas Müchler, Martin Jansen, Jürgen Kübler,

Shou-Chen Zhang, Xiaoliang Qi, Yulin Chen

www.superconductivity.de

Page 2: Project 4.8-A Thin films of Heusler compounds with high

+

Co-workers in Dresden and elsewhereDresden group

Shou-Cheng Zhang et al., Stanford

Yulin Chen et al. Oxford

Stuart Parkin et al. IBM Almaden

Paul Canfield, Ames Lab.

October, 13-17, 2013 Sino-German Workshop on Kondo and Mott

Page 3: Project 4.8-A Thin films of Heusler compounds with high

Topology in chemistry

Molecules with different chiralities can havedifferent physical and chemical properties

Topologically interesting compounds are 4n aromatics with Möbiusgeometry, whereas normal 4n compounds are anti-aromatic

Page 4: Project 4.8-A Thin films of Heusler compounds with high

Hückel and Möbius aromaticityMagic electron numbers

Hückel:4n+2 aromatic4n antiaromatic

Möbius4n aromatic4n+2 antiaromatic

Page 5: Project 4.8-A Thin films of Heusler compounds with high

Hückel and Möbius aromaticity

October, 13-17, 2013 Sino-German Workshop on Kondo and Mott

Page 6: Project 4.8-A Thin films of Heusler compounds with high

Topological Insulator

Page 7: Project 4.8-A Thin films of Heusler compounds with high

Topological Insulator

Page 8: Project 4.8-A Thin films of Heusler compounds with high

3D Topological Insulators

Bi-Sb alloys

Bi2Se3 and relatives

Topological insulators

Moore and Balents, PRB 75, 121306(R) (2007)Fu and Kane, PRB 76, 045302 (2007)Murakami, New J. Phys. 9, 356 (2007)Hsieh, et al., Science 323, 919 (2009)Xia, et al., Nature Phys. 5, 398 (2009); Zhang, et al., Nature Phys. 5, 438 (2009)

Page 9: Project 4.8-A Thin films of Heusler compounds with high

2D TI … prediction and realization

• HgTe and relatives

• Quantum well structure

Topological insulators

Kane and Mele, PRL 95, 146802 (2005)Bernevig,et al., Science 314, 1757 (2006)

Bernevig, S.C. Zhang, PRL 96, 106802 (2006)König, et al. Science 318, 766 (2007)

Page 10: Project 4.8-A Thin films of Heusler compounds with high

Heusler compounds

Diamond ZnS Heusler XYZ C1b

Graf, Felser, Parkin, IEEE TRANSACTIONS ON MAGNETICS 47 (2011) 367Graf, Felser, Parkin, Progress in Solid State Chemistry 39 (2011) 1

Page 11: Project 4.8-A Thin films of Heusler compounds with high

spin orbital coupling counts

λSOC~ Z2 for valence shells

Page 12: Project 4.8-A Thin films of Heusler compounds with high

3 + 5 = 8 3 + 5 = 8

Synthesis

Zr

Ga

Ni

4 + 10 + 4 = 18

As

Sn

Counting Electrons

From wide to low band gap semiconductor

MgLi

1 + 2 + 5 = 8

As

2 s 6 p

10 d

14 f

Graf, Felser, Parkin, Progress in Solid State Chemistry 39 (2011) 1Kandpal et al., J. Phys. D 39 (2006) 776

RE Pt

3 (+fn) + 10 + 5 = 18 + n

Bi

Page 13: Project 4.8-A Thin films of Heusler compounds with high

ScNiSb

LaPtBiLaPtBi

Graf, Felser, Parkin, Progress in Solid State Chemistry (2011)Chadov, Qi, Kübler, Zhang, Felser Nature Mat. 9 (2010) 541, arXiv:1003.0193

Predicting new Compounds

Page 14: Project 4.8-A Thin films of Heusler compounds with high

Trivial and topological insulators

Trivial semiconductorCdS

Topological InsulatorWithout spin orbit coupling

Topological InsulatorWithspin orbit coupling

Sufficient condition:

Parity change

Centro symmetric Eigenvalues

Noncentro sym. Z2 classification-

Page 15: Project 4.8-A Thin films of Heusler compounds with high

CdTe

HgTe

ScPtSb

ScPtBi

Structure to Property

Chadov, Qi, Kübler, Zhang, Felser Nature Mat. 9 (2010) 541, arXiv:1003.0193

Page 16: Project 4.8-A Thin films of Heusler compounds with high

Multifunctional topologic insulators

REPt

10 + 3 (+fn) + 5 = 18

Bi

Chadov, Qi, Kübler, Zhang, Felser Nature Mat. 9 (2010) 541

Multifunctional properties

• RE: Gd Magnetism and TI

• Antiferromagnetism with GdPtBi

• RE: Ce

• complex behaviour of the Fermi surface

• RE: Yb Kondo insulator and TI

• YbPtBi is a super heavy fermion with the highest g value

Page 17: Project 4.8-A Thin films of Heusler compounds with high

Non centro symmetric Superconductor

REPt

10 + 3 (+fn) + 5 = 18

Bi

Chadov, Qi, Kübler, Zhang, Felser Nature Mat. 9 (2010) 541

Goll et al. Physica B 403 1065 (2008)

Multifunctional properties

• RE: La Superconductivity and TI

• LaPtBi is superconductor

• p-type semiconductors

• with a band inversion

• without inversion symmetry and

• low charge carrier concentration n = 6*1018cm-3

Page 18: Project 4.8-A Thin films of Heusler compounds with high

Wikipedia: A Majorana fermion, also referred to as a Majorana particle, is a fermion that is its own antiparticle. They were hypothesised by Ettore Majorana in 1937. The term is sometimes used in opposition to a Dirac fermion, which describes fermions that are not their own antiparticles. No elementary fermions are known to be their own antiparticle, though the nature of the neutrino is not settled and it might be a Majorana fermion.

Hunting Majorana

Mourik et al. Science 336 (2012) 1003

Page 19: Project 4.8-A Thin films of Heusler compounds with high

Topological phenomena topological structure in the physical system, which are thus usually universal and robust against perturbations. • flux quantization in superconductors • Hall conductance quantization in the Quantum Hall states• topological insulators and topological superconductors

Quantum entanglement essential for quantum information and quantum computation The understanding of quantum entanglement provides a new probe to the physical properties of the many-body systems compared to the conventional response properties such as conductivity, spin susceptibility, etc.

What is the relation between quantum entanglement and topological states of matter? Xiaoliang Qi

Page 20: Project 4.8-A Thin films of Heusler compounds with high

Topolocical Insulator + Superconductor

0

5

10

-14 -12 -10 -8 -6 -4 -2 00.0

0.2

0.4

0.6

0.8

1.0

(a)

LaPtBi

Total DOS

Pt

La

Bi

n(E

) [e

V-1]

LaPtBi

Inte

nsity I

(E)

/ I m

ax

Energy E F [eV]

(b)

0.0

0.4

0.8

1.2

1.6

0 1 2 3 4 50.0

0.5

1.0

1.5

2.0

0 50 100 150 200 250 3000

8

16

24

32

0 1 2 3 4 50

5

10

15

20 Resi

stiv

ity (

m

cm

)

LaPtBi

YPtBi

T (K)

Hard X-ray Photoemission

Shekkar et al. J. Appl. Phys. 113 17E142 (2013)

Page 21: Project 4.8-A Thin films of Heusler compounds with high

YPtBi

Page 22: Project 4.8-A Thin films of Heusler compounds with high

YPtBi ARPES and Theory

Γ K M Γ

Collaboration with Yulin Chen, Oxford

Page 23: Project 4.8-A Thin films of Heusler compounds with high

Zero band gap

October, 13-17, 2013 Sino-German Workshop on Kondo and Mott

Ouardi et. al. Appl. Phys. Lett. 99, 211904 (2011).Ouardi et. al. Appl. Phys. Lett. 98, 211901 (2011).

Shekhar, C. et. al. Appl. Phys. Lett. 100, 2152109 (2012).

Polarization dependent valence band spectra and linear MR of PtLuSb

Page 24: Project 4.8-A Thin films of Heusler compounds with high

Linear MR and ultrahigh mobiltyWeak localisation

A close relation between the linear MR and the Hall mobility for this class of materials

Ouardi et. al. Appl. Phys. Lett. 99, 211904 (2011).Ouardi et. al. Appl. Phys. Lett. 98, 211901 (2011).

Shekhar, C. et. al. Appl. Phys. Lett. 100, 2152109 (2012).Shekkar et al. PRB 86, 155314 (2012)

Page 25: Project 4.8-A Thin films of Heusler compounds with high

Hunting Majorana

Ebke, Reiss, Wernsdorfer, Felser et al. unpublished

October, 13-17, 2013 Sino-German Workshop on Kondo and Mott

Page 26: Project 4.8-A Thin films of Heusler compounds with high

• Taking the borderline compound YPtSb at a quantum critical line/point

• Applying strain: A gap will be opened and the Dirac cone stays in the gap

• Critical thickness for the quantum well structure

Quantum phase transition

Chadov, Qi, Kübler, Zhang, Felser Nature Mat. 9 (2010) 541

YPtSb is an excellent piezoelectricarXiv:1107.5078 (Vanderbilt, Rabe)

Page 27: Project 4.8-A Thin films of Heusler compounds with high

Zero band gap

Wang et al. Science Report (2013)

Large Linear Magnetoresistance and Shubnikov-de Hass Oscillations in SingleCrystals of YPdBi Heusler Topological Insulators

Page 28: Project 4.8-A Thin films of Heusler compounds with high

Zero band gap

Wang et al. Science Report (2013)

Page 29: Project 4.8-A Thin films of Heusler compounds with high

Infrared spectroscopy. band gap predicted

theoretically and observed from bulk

material (0.16 eV).

Temperature dependence of the conductance

indicates a semiconducting behavior. Hall

effect shows a carrier concentration is in the

order of 1019 cm-3 and the mobility is around

380 cm2/Vs.

0,0 0,1 0,2 0,3 0,4 0,5-0,1

0,0

0,1

0,2

0,3

0,4

0,5

Ab

sorb

ance

(a.

u.)

Energy (eV)

YPtSb047

Linear fit

Eg= 0.158 eV

•t = 40 nm

0 50 100 150 200 250 3001200

1250

1300

1350

1400

YPtSb053

(

S*cm

-1)

Temperature (K)50 100 150 200 250 300

7.0x10-4

7.2x10-4

7.4x10-4

7.6x10-4

7.8x10-4

8.0x10-4

Resi

stiv

ity (

Ohm

*cm

)

Temperature (K)

YPtSb053

Resistivity/ Conductivity

t = 100 nm

Shan Rong et al, Phys. Status Solidi RRL 7 (2013) 145

Small Bandgap in YPtSb

Page 30: Project 4.8-A Thin films of Heusler compounds with high

Good TI are good thermoelectrics

Ouardi, et al., Appl. Phys. Lett. 99 (2011) 211904.

Page 31: Project 4.8-A Thin films of Heusler compounds with high

HgTe

aAg2Te LaPtBi

Li2AgSb

AuTlS2

b Ag2Te

Distorted Structure to Property

Page 32: Project 4.8-A Thin films of Heusler compounds with high

Surface statesAuTlS2

Ener

gy (

eV)

-0.5

0.5

M Γ X

Te terminal

Müchler, Zhang, Chadov, Yan, Kübler, Zhang, Felser, Angewandte Chemie 124 7333 (2012)

Page 33: Project 4.8-A Thin films of Heusler compounds with high

Graphite

KHgSb

HgTe

aAg2Te LaPtBi

Li2AgSb

AuTlS2

b Ag2Te

structure to property

Page 34: Project 4.8-A Thin films of Heusler compounds with high

Honeycomb: Weak TI

Yan, Müchler, Felser, Phys. Rev. Lett. 109 (2012) 116406Zhang, Chadov, Müchler, Yan, Qi, Kübler, Zhang, Felser, Phys. Rev. Lett. 106 (2011) 156402

Hg-s

j=3/2

j=1/2

Page 35: Project 4.8-A Thin films of Heusler compounds with high

Honeycomb from sp3 to sp2

Zhang et al., Phys. Rev. Lett. 106 (2011) 156402 and Yan et al. Phys. Rev. Lett. 109, 116406 (2012)

Band inversion is found in the heavier

compounds

No surface state? Why ?

Interaction between the two

layers in the unit cell and two Dirac

Cones

Page 36: Project 4.8-A Thin films of Heusler compounds with high

a)

b)

Page 37: Project 4.8-A Thin films of Heusler compounds with high

Honeycomb from sp3 to sp2

Zhang, Chadov, Müchler, Yan, Qi, Kübler, Zhang, Felser, Phys. Rev. Lett. 106 (2011) 156402 arXiv:1010.2195v1

KZnP

NaHgSb

KHgSb M G Z(A) R

-4

-2

0

2

E-E

F (

eV)

NaHgSb

KHgSb

Page 38: Project 4.8-A Thin films of Heusler compounds with high

Honeycomb: weak TI

Yan, Müchler, Felser, Phys. Rev. Lett. 109 (2012) 116406Zhang, Chadov, Müchler, Yan, Qi, Kübler, Zhang, Felser, Phys. Rev. Lett. 106 (2011) 156402

Page 39: Project 4.8-A Thin films of Heusler compounds with high

a large family of weak and strong TIs

M(k) = M0 – B k//2 - G kz

2

BHZ model, minimal Hamiltonian

Page 40: Project 4.8-A Thin films of Heusler compounds with high

Pu with the largest SOC

T. Gouder, P. M. Oppeneer, et al. Phys. Rev. B 72, 115122 (2005).L. Müchler, et al, Angewandte Chemie 124 7333 (2012)Xiao Zhang, Haijun Zhang, Claudia Felser, Shou-Cheng Zhang, Science 335 (2012) 1464

Page 41: Project 4.8-A Thin films of Heusler compounds with high

Band inversion between d and fbands of different parity PuTe under pressure has a band gap up to 0.4 eV

Xiao Zhang, Haijun Zhang, Claudia Felser, Shou-Cheng Zhang, Science 335 (2012) 1464

PuTe and AmN, cubic 3D correlated TI

Topological Mott Insulator, with a Dirac cone at G

Page 42: Project 4.8-A Thin films of Heusler compounds with high

Intrinsic Nanostructures …

Page 43: Project 4.8-A Thin films of Heusler compounds with high

Skutterudites

Review Thermoelectrica: G. J.Snyder, E. S. Toberer, Nat. Mat. 7 (2008) 105.

J. Phys.: Condens. Matter 13 (2001) 4495

SuperconductorPrOs4Sb12

Page 44: Project 4.8-A Thin films of Heusler compounds with high

Skutterudites

B. Yan, L Müchler, HJ Zhang, XL Qi,, SC Zhang, C. Felser, PRB 85 (2012) 165125, arXiv:1104.0641

Band inversion between d and fbands of different parity

Page 45: Project 4.8-A Thin films of Heusler compounds with high

Topological Perovskite Oxides

ABO3

A

B

BaBiO3 has a formal charge of +4 for Bi 6s1

BiO6-octahedra are tilted 159.9◦ not 180◦Bi5+ and Bi3+ lead to BiO6 octahedra breathing in and outHole doped BaBiO3 is superconducting with a maximum Tc is 34 K for Ba0.6K0.4BiO3.8

Ba1−xKxBiO3 (BKBO) crystallizes in the cubic structure0.375 < x < 0.5 no breathing mode, but superconducting

Can perovskites exhibit topological quantum states?

• Stable against against surface oxidization and degrading • Multi-functionality, superconductivity, magnetic, ferroelectric• Experiment fabrication

First example: BaBiO3

Page 46: Project 4.8-A Thin films of Heusler compounds with high

(a) Undistorted ideal (b) Tilted octahedra(c) Breathing no tilting(d) Breathing and tilting

The lone pair - RbTlCl3

RbTlCl3 has a formal charge of +2 for Tl 6s1

Page 47: Project 4.8-A Thin films of Heusler compounds with high

• 3D strong TI with Z2 (1;111)• Largest Eg of 0.7 eV among all known TIs

Yan, Jansen, Felser, Nature Physics online.

)

Oxide Topologic Insulator

BaBiO3 has a formal charge of +4 for Bi 6s1 6s2

Page 48: Project 4.8-A Thin films of Heusler compounds with high

Robust against lattice distortion

O-breathingOctahedral distortion

Page 49: Project 4.8-A Thin films of Heusler compounds with high

SC: p-type

TI: n-type

A platform for Majorana fermions

TI + SC interface

B. Yan, M. Jansen, C. Felser, Nature Physics, online

Page 50: Project 4.8-A Thin films of Heusler compounds with high

Mixed valent BaBiO3

Single Crystals

100 mm

Page 51: Project 4.8-A Thin films of Heusler compounds with high

Prediction in multilayer

100 mm

Haijun Zhang et al. , arXiv:1308.0349

Page 52: Project 4.8-A Thin films of Heusler compounds with high

Prediction in multilayer

100 mm

Haijun Zhang et al. , arXiv:1308.0349

Page 53: Project 4.8-A Thin films of Heusler compounds with high

Summary

Half Heusler as multifunctional TI• Linear dispersion via ARPES• TI plus superconductivity, Kondo,

Magnetism

Correlated TIs with d – f inversion• Skutterudites• PuTe• SmB6 (Fisk) …

New oxide TI: BaBiO3

• Large gap 0.7 eV• Possible TI + SC interface• Other s2 systems such Tl+ Pb2+ Bi3+ for TI• Other s1 system stable against breathing for

superconductivity such as CsPbCl2O or BaPbO2F

What is next? Correlated oxides