856 New patents

4417355

X-RAY FLUORESCENCE SPECTROMETER

Khment V Anisovich, Nikolai I Komyak, Zaur- bek Menbaev, Leningrad, Union Of Soviet Socialist Republics assigned to Lenin~adskoe NPO Burevestnik

An X-ray fluorescence sp~trometer comprising an X-ray source, a sample holder spaced from the X-ray source at a distance which ensures the illumination of the central portion of the sample not less than 0.3 ZU erg./s.cm2.w, where Z is the atomic weight of material of the X-ray anode and U is the voltage across the X-ray source, in kilovolts. The spectrometer further comprises a curved analyzing cristal for focusing the fluores- cent radiation of the sample at an X-ray detector. The analyzing cristal and the detector are in- stalled in an evacuated chamber. The X-ray source and the sample holder are positioned out- side the evacuated chamber which has a window for passing X-ray radiation. The sample holder is positioned so that the average distance between the sample surface portion which produces radi- ation incident on the analyzing cristal and the window does not exceed the distance between said sample surface portion and the focus of the X-ray source.

4416736

PROCEDURE FOR THE ENRI~~ENT OF THE ELEM~~

OF INTEREST FROM A SOLUTION FOR NONFLAME

ATOMIC ABSORPTION SPECTROSCOPY

Bernhar Huber, Federal Republic Of Germana assigned to Bodenseewerk Perkin-Elmer & Co GmbH

An apparatus for en~~hi~g a sought element from a solution for flameless atomic absorption

spectroscopy includes a constant voltage current source. The solution is enriched by electro- depositing the sought element therefrom and integrating the current with respect to time.

4415916

GERMANIUM SEMI~ONDUCTIN~ RADIATION DETECTOR WITH PHOSPHORUS

IMPLANTED N+ CONTACT

Davor Protic, Georg Riepe, Jfederal Republic Of Germana assigned to Kernforschung~niage Julich GmbH

~~ani~rn detectors usable for charged par- ticle spectroscopy and capable of enduring over- voltage without impairment are produced by first implanting phosphorus ions of high energy in a small dose and then implanting more phosphorus ions of lower energy in a large dose. The low energy ions reduce surface resistance without impairing the improved properties of withstanding overvoltage that are provided by the high energy implantation. The p-t- contact is provided by boron ion implantation in a conven- tional manner. Dead zones on both sides have been found to have a very small thickness of 0.3 mum.