preliminary datasheet rqa0009txdqs · reverse transfer capacitance crss — 3.5 — pf vdg = 6 v,...

R07DS0492EJ0200 Rev.2.00 of 21 Jun 29, 2011

Preliminary Datasheet

RQA0009TXDQS Silicon N-Channel MOS FET

Features

High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz)

Compact package capable of surface mounting Electrostatic Discharge Immunity Test

(IEC Standard, 61000-4-2, Level4)

Outline

1. Gate

2. Source

3. Drain

4. Source

1

3

2, 4

12

3

4

RENESAS Package code: PLZZ0004CA-A

(Package Name : UPAK)

Note: Marking is “TX”.

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage VDSS 16 V

Gate to source voltage VGSS ±5 V

Drain current ID 3.2 A

Channel dissipation Pchnote 15 W

Channel temperature Tch 150 C

Storage temperature Tstg –55 to +150 C

Note: Value at Tc = 25C

This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.

R07DS0492EJ0200(Previous: REJ03G1520-0100)

Rev.2.00Jun 28, 2011

RQA0009TXDQS Preliminary

R07DS0492EJ0200 Rev.2.00 of 21 Jun 29, 2011

Electrical Characteristics

(Ta = 25°C)

Item Symbol Min. Typ Max. Unit Test Conditions

Zero gate voltage drain current IDSS — — 15 A VDS = 16 V, VGS = 0

Gate to source leak current IGSS — — ±2 A VGS = ±5 V, VDS = 0

Gate to source cutoff voltage VGS(off) 0.15 0.5 0.8 V VDS = 6 V, ID = 1 mA

Forward Transfer Admittance |yfs| 2.2 3.2 4.4 S VDS = 6 V, ID = 1.6 A

Input capacitance Ciss — 76 — pF VGS = 5 V, VDS = 0, f = 1 MHz

Output capacitance Coss — 40 — pF VDS = 6 V, VGS = 0, f = 1 MHz

Reverse transfer capacitance Crss — 3.5 — pF VDG = 6 V, VGS = 0, f = 1 MHz

— 33.1 — dBm Output Power Pout

— 2.0 — W

Power Added Efficiency PAE — 65.7 — %

VDS = 3.6 V, IDQ = 200 mA f = 155 MHz, Pin = +20 dBm (100mW)


— 7.2 — W


VDS = 7.0 V, IDQ = 200 mA f = 155 MHz, Pin = +25 dBm (316 mW)


— 2.0 — W




— 7.6 — W




— 2.1 — W




— 8.0 — W




— 3.3 — W

Power Added Efficiency PAE — 60 — %


36.8 37.8 — dBm Output Power Pout

4.8 6.0 — W

Power Added Efficiency PAE 60 65 — %

VDS = 6 V, IDQ = 180 mA f = 520 MHz, Pin = +25 dBm (316 mW)

Main Characteristics

Maximum Channel PowerDissipation Curve

0 50 100

Case Temperature TC (°C)

150 2000C

ha

nn

el P

ow

er

Dis

sip

atio

n

Pch

(W

)

5

10

15

20

Drain to Source Voltage VDS (V)

Dra

in C

urr

en

t

I D (A

)

Typical Output Characteristics

0

1

2

3

Pulse Test

0 2 4 6 8 10

4

VGS = 1.0 V

2.0 V

1.5 V

1.25 V

1.75 V


R07DS0492EJ0200 Rev.2.00 of 21 Jun 29, 2011

Gate to Source Voltage VGS (V)

Input

Capa

cita

nce

C

iss

(pF

)

Input Capacitance vs.

Gate to Source Voltage

Output Capacitance vs.

Drain to Source Voltage

Outp

ut

Ca

pa

cita

nce

C

oss

(pF

)

10

100

1000


Reverse Transfer Capacitance vs.

Drain to Gate Voltage

0.1 1 10

Drain to Gate Voltage VDG (V)

1

10

100

Re

vers

e T

ransfe

r C

apa

cita

nce C

rss (p

F)

40

50

60

70

80

-5 -4 -3 -2 -1 1 2 3 4 50

90

MSG, MAG vs. Frequency

Maxim

um

Sta

ble

Gain

M

SG

(d

B)

Maxim

um

Availa

ble

Gain

M

AG

(d

B)

Frequency f (MHz)

0.1 1 10

VDS = 0

f = 1 MHz

VGS = 0

f = 1 MHz

VGS = 0

f = 1 MHz

0 500 1000 1500 2000

5

15

25

30

20

10

0

MSG

MAG

VDS = 6 V

ID = 180 mA

0.1

1.0

10.0

0.1 1.0 10.0

Drain Current ID (A)

Forw

ard

Tra

nsfe

r A

dm

itta

nce |

yfs

| (

S)

Forward Transfer Admittance

vs. Drain Current

0 0.5 1.0 1.5 2.00

2

1

4

Dra

in C

urr

ent I D

(A

)

Forw

ard

Tra

nsfe

r A

dm

itta

nce |

yfs

| (

S)

Typical Transfer Characterisitics

3

VDS = 6 V

Pulse Test

Gate to Source Voltage VGS (V)

|yfs| ID

VDS = 6 V

Pulse Test


R07DS0492EJ0200 Rev.2.00 of 21 Jun 29, 2011

Evaluation Circuit 1 (@VDD = 3.6 & 7.0V Tuning, f = 155 MHz)

C1, C3, C10, C11

C2

C4, C13

C5, C12

C6

C7

C8

C9

100 pF Chip Capacitor



1 μF/+16V Chip Tantalum Capacitor




4 pF Chip Capacitor

RF OUT

RF IN

VGG VDD

C1 C2

C3

C5

C6

C12 C13

L1

L4

L2 L3R1

50 Ω

50 Ω

C11

C9

C7

C8

C10

C4

R2

L1

L2

L3

L4

R1

R2

33 nH Chip Inductor

3.6 nH Chip Inductor


8 Turns D: 0.5 mm, φ 2.4 mm Enamel Wire

33 Ω Chip Resistor

1 kΩ Chip Resistor

Power Gain, Power Added Efficiency

vs. Input Power

Pow

er

Ga

in P

G

(dB

)

Input Power Pin (dBm)

Output Power, Drain Current

vs. Input Power

Outp

ut P

ow

er

P

out (

dB

m)

Pow

er

Added E

ffic

iency

PA

E

(%)


Dra

in C

urr

ent I D

(A

)

0 5 15 3010 20 250

30

10

20

40

0

20

40

60

10

15

25

40

0

1

2.5

20

1.5

VDS = 3.6 V

IDQ = 200 mA

f = 155 MHz

ID

30

35

0.5

2

3 80

Pout

0 5 15 3010 20 25

VDS = 3.6 V

IDQ = 200 mA

f = 155 MHz

PAE

PG


vs. Frequency

10

20

40

0

1

3

25

15

2

140 1901200

10

30

20

40

80

15

5

6020

25

30

50

70

Pow

er

Ga

in P

G

(dB

)

120 150 190


vs. Frequency

Pow

er

Added E

ffic

iency

PA

E

(%)

30

35

0.5

1.5

2.5

Frequency f (MHz)

Dra

in C

urr

ent I D

(A

)

Outp

ut P

ow

er

P

out (

dB

m)

Frequency f (MHz)

PG

PAE

170130 160 180150 130 140 160 170 180

VDS = 3.6V

IDQ = 200 mA

Pin = +20dBm

Pout

ID

VDS = 3.6V

IDQ = 200 mA

Pin = +20dBm


R07DS0492EJ0200 Rev.2.00 of 21 Jun 29, 2011

Pow

er

Ga

in P

G

(dB

)

0 100 200 500400


vs. Idling Current

0

10

40

30

20

0

20

80

60

40


vs. Idling Current

10

30

40

2.5

3

35

20

300 400 5000

Pow

er

Added E

ffic

iency

PA

E

(%)

200

1

Outp

ut P

ow

er

P

out (

dB

m)

Dra

in C

urr

ent I D

(A

)

Idling Current IDQ (mA) Idling Current IDQ (mA)

25

15

1.5

2

0.5

0100

Pout

ID

VDS = 3.6V

f = 155 MHz

Pin = +20 dBm

PG

300

PAE

VDS = 3.6 V

f = 155 MHz

Pin = +20 dBm


vs. Input Power

Pow

er

Ga

in P

G

(dB

)



vs. Input Power

Outp

ut P

ow

er

P

out (

dB

m)

Pow

er

Added E

ffic

iency

PA

E

(%)


Dra

in C

urr

ent I D

(A

)

0

10

30

40

0

20

40

60

0 5 15 3010 20

VDS = 7 V

f = 155 MHz

IDQ = 200 mA

20

80

10

15

25

40

0

2.0

2.5

0 5 15 3010 20

20 1.0

0.5VDS = 7 V

f = 155 MHz

IDQ = 200 mA

ID

30

35

1.5

3.0

25 25

PAE

Pout

PG

Pow

er

Ga

in P

G

(dB

)

3 3.5 4 54.5


vs. Drain to Source Voltage

0

10

40

30

20

0

20

80

60

40




10

20

40

0

2

IDQ = 200 mA

f = 155MHz

Pin = +20dBm

3

30

15

2.5

4 4.5 5

ID

Pout

3

Pow

er

Added E

ffic

iency

PA

E

(%)

3.5

1

Outp

ut P

ow

er

P

out (

dB

m)

Dra

in C

urr

ent I D

(A

)


IDQ = 200 mA

f = 155 MHz

Pin = +20dBm

PG

PAE

25

35

1.5

0.5


R07DS0492EJ0200 Rev.2.00 of 21 Jun 29, 2011

Frequency f (MHz)

120 140 180160 190


vs. Frequency

140 150 160 170 190

Frequency f (MHz)

120

Pow

er

Ga

in

PG

(d

B)

2 4 6 108



0

10

40

30

20

0

20

80

60

40




10

30

50

0

2

IDQ = 200 mA

Pin = +25 dBm

f = 155 MHz

4

40

20

3

6 8 10

ID

Pout

2

Po

we

r A

dd

ed

Effic

ien

cy

PA

E

(%)

0

1

3

0.5

2.5

10

20

40

25

15

PAE

0

15

25

20

30

4

1

30

35

Ou

tpu

t P

ow

er

P

ou

t (

dB

m)

130 150 170

1.5

2


vs. Frequency

Dra

in C

urr

en

t

I D

(A)

Pow

er

Ga

in

PG

(d

B)

5

10

20

50

70

60

30

30

40

130 180

Ou

tpu

t P

ow

er

P

ou

t (

dB

m)

Dra

in C

urr

en

t

I D

(A)

Po

we

r A

dd

ed

Effic

ien

cy

PA

E

(%)


Pow

er

Ga

in

PG

(d

B)

0 100 200 500400


vs. Idling Current

0

10

40

30

20

0

20

80

60

40


vs. Idling Current

10

30

40

2.5

3

35

20

300 400 5000

Po

we

r A

dd

ed

Effic

ien

cy

PA

E

(%)

200

1

Ou

tpu

t P

ow

er

P

ou

t (

dB

m)

Dra

in C

urr

en

t

I D

(A)


25

15

1.5

2

0.5

0100

Pout

ID

VDS = 7V

Pin = +25 dBm

f = 155 MHz

PG

PAE

PG

300

VDS = 7 V

Pin = +25 dBm

f = 155 MHz

IDQ = 200 mA

Pin = +25 dBm

f = 155 MHz

PG

PAE

ID

Pout

VDS = 7V

IDQ = 200 mA

Pin = +25 dBm

VDS = 7V

IDQ =200 mA

Pin = +25 dBm


R07DS0492EJ0200 Rev.2.00 of 21 Jun 29, 2011


C1

C2, C3,C8,C10

C4, C13

C5, C12, C15

C6, C14

C7

C9, C11





1 μF / +16V Chip Tantalum Capacitor

5 pF Chip Capacitor


RFOUTRFIN

VGG VDD

C1

C2

C4

C7 C10

L1L3

R150 Ω

50 Ω

C14

C13

C12C3

C8

C6

L2

C5

C15

L4 C9 C11

L1

L2

L3

L4

R1





6.8k Ω Chip Resistor


vs. Input Power

Pow

er

Ga

in

PG

(d

B)



vs. Input Power

Ou

tpu

t P

ow

er

P

ou

t (

dB

m)

Po

we

r A

dd

ed

Effic

ien

cy

PA

E

(%)


Dra

in C

urr

en

t

I D

(A)

0 5 15 3010 20 250

30

10

20

40

0

20

40

60

10

15

25

40

0

1

2.5

20

1.5

VDS = 3.6 V

IDQ = 200 mA

f = 360 MHz

ID

30

35

0.5

2

3 80

Pout

0 5 15 3010 20 25

VDS = 3.6 V

IDQ = 200 mA

f = 360 MHz

PAE

PG


vs. Frequency

10

20

40

0

1

3

25

15

2

360 400

ID

3000

10

30

20

40

80

15

5

6020

25

30

50

70

Pow

er

Ga

in

PG

(d

B)

300 350 400


vs. Frequency

Po

we

r A

dd

ed

Effic

ien

cy

PA

E

(%)

30

35

0.5

1.5

2.5

Frequency f (MHz)

Dra

in C

urr

en

t

I D

(A)

Ou

tpu

t P

ow

er

P

ou

t (

dB

m)

Frequency f (MHz)

PG

VDS = 3.6V

IDQ = 200 mA

Pin = +20dBm

PAE

320 380340

Pout

VDS = 3.6V

IDQ = 200 mA

Pin = +20dBm


R07DS0492EJ0200 Rev.2.00 of 21 Jun 29, 2011

Pow

er

Ga

in

PG

(d

B)

0 100 200 500400


vs. Idling Current

0

10

40

30

20

0

20

80

60

40


vs. Idling Current

10

30

40

2.5

3

35

20

300 400 5000

Po

we

r A

dd

ed

Effic

ien

cy

PA

E

(%)

200

1

Ou

tpu

t P

ow

er

P

ou

t (

dB

m)

Dra

in C

urr

en

t

I D

(A)


25

15

1.5

2

0.5

0100

Pout

IDPG

300

PAE

VDS = 3.6 V

f = 360 MHz

Pin = +20 dBm

VDS = 3.6V

f = 360 MHz

Pin = +20 dBm

Pow

er

Ga

in

PG

(d

B)

3 3.5 4 54.5



0

10

40

30

20

0

20

80

60

40




10

30

40

0

2

IDQ = 200 mA

f = 360MHz

Pin=+20dBm

3

35

20

4 4.5 5

ID

Pout

3

Po

we

r A

dd

ed

Effic

ien

cy

PA

E

(%)

3.5

1

Ou

tpu

t P

ow

er

P

ou

t (

dB

m)

Dra

in C

urr

en

t

I D

(A)


IDQ = 200 mA

f = 360 MHz

Pin=+20dBm

PG

PAE

15

25

0.5

1.5

2.5


vs. Input Power

Pow

er

Ga

in

PG

(d

B)



vs. Input Power

Ou

tpu

t P

ow

er

P

ou

t (

dB

m)

Po

we

r A

dd

ed

Effic

ien

cy

PA

E

(%)


Dra

in C

urr

en

t

I D

(A)

0 5 15 3010 20 250

30

10

20

40

0

20

40

60

10

15

25

40

0

1

2.5

20

1.5

ID

30

35

0.5

2

3 80

Pout

0 5 15 3010 20 25

PG

PAE

VDS = 7 V

IDQ = 200 mA

f = 360 MHz

VDS = 7 V

IDQ = 200 mA

f = 360 MHz


R07DS0492EJ0200 Rev.2.00 of 21 Jun 29, 2011


vs. Frequency

10

20

40

0

1

3

25

15

2

350 400

Pout

ID

3000

10

30

20

40

80

15

5

6020

25

30

50

70

Pow

er

Ga

in P

G

(dB

)

300 350 400


vs. Frequency

Pow

er A

dded E

ffic

iency P

AE

(%

)

30

35

0.5

1.5

2.5

Frequency f (MHz)

Dra

in C

urr

ent I D

(A

)

Outp

ut P

ow

er

P

out (

dB

m)

Frequency f (MHz)

PG

PAE

Pow

er

Ga

in P

G

(dB

)

0 100 200 500400


vs. Idling Current

0

10

40

30

20

0

20

80

60

40


vs. Idling Current

10

30

40

2.5

3

35

20

300 400 5000

Pow

er A

dded E

ffic

iency P

AE

(%

)

200

1

Outp

ut P

ow

er

P

out (

dB

m)

Dra

in C

urr

ent I D

(A

)


25

15

1.5

2

0.5

0100

Pout

ID

VDS = 7V

Pin = +25 dBm

f = 360 MHz

PG

300

PAE

VDS = 7V

IDQ = 200 mA

Pin = +25dBm

VDS = 7V

IDQ = 200 mA

Pin = +25dBm

VDS = 7 V

Pin = +25 dBm

f = 360 MHz

Pow

er

Ga

in P

G

(dB

)

2 4 6 108



0

10

40

30

20

0

20

80

60

40




10

30

50

0

2

IDQ = 200 mA

Pin = +25 dBm

f = 360MHz

4

40

20

3

6 8 10

ID

Pout

2

Pow

er A

dded E

ffic

iency P

AE

(%

)

4

1

Outp

ut P

ow

er

P

out (

dB

m)

Dra

in C

urr

ent I D

(A

)


PG

PAE

IDQ = 200 mA

Pin = +25 dBm

f = 360MHz


R07DS0492EJ0200 Rev.2.00 of 21 Jun 29, 2011


C1

C2, C3, C7, C10

C4, C13

C5, C12, C15

C6, C14

C8





1 μF / +16V Chip Tantalum Capacitor

7 pF Chip Capacitor

RFOUTRFIN

VGG VDD

C1

C2

C4

C7 C10

L1L3

R150 Ω

50 Ω

C14

C13

C12C3

C8

C6

L2

C5

C15

L4 C9 C11


vs. Input Power

Pow

er

Ga

in

PG

(d

B)



vs. Input Power

Ou

tpu

t P

ow

er

P

ou

t (

dB

m)

Po

we

r A

dd

ed

Effic

ien

cy

PA

E

(%)


Dra

in C

urr

en

t

I D

(A)

0 5 15 3010 20 250

30

10

20

40

0

20

40

60

10

15

25

40

0

1

2.5

20

1.5

VDS = 3.6 V

IDQ = 200 mA

f = 465 MHz

ID

30

35

0.5

2

3 80

0 5 15 3010 20 25

VDS = 3.6 V

IDQ = 200 mA

f = 465 MHz

PAE

PG

Pout

C9

C11

L1

L2, L3

L4

R1


2 pF Chip Capacitor



8 Turns D: 0.5 mm,f2.4mm Enamel Wire

6.8k Ω Chip Resistor


vs. Frequency

10

20

40

0

1

3

25

15

2

470 490

Pout

ID

4400

10

30

20

40

80

15

5

6020

25

30

50

70

Pow

er

Ga

in

PG

(d

B)

440 470 490


vs. Frequency

Po

we

r A

dd

ed

Effic

ien

cy

PA

E

(%)

30

35

0.5

1.5

2.5

Frequency f (MHz)

Dra

in C

urr

en

t

I D

(A)

Ou

tpu

t P

ow

er

P

ou

t (

dB

m)

Frequency f (MHz)

PG

VDS = 3.6 V

IDQ = 200 mA

Pin = +20dBm

PAE

450 460 480 450 460 480

VDS = 3.6 V

IDQ = 200 mA

Pin = +20dBm


R07DS0492EJ0200 Rev.2.00 of 21 Jun 29, 2011

Pow

er

Ga

in P

G

(dB

)

0 100 200 500400


vs. Idling Current

0

10

40

30

20

0

20

80

60

40


vs. Idling Current

10

30

40

2.5

3

35

20

300 400 5000

Pow

er A

dded E

ffic

iency P

AE

(%

)

200

1

Outp

ut P

ow

er

P

out (

dB

m)

Dra

in C

urr

ent I D

(A

)


25

15

1.5

2

0.5

0100

Pout

ID

VDS = 3.6V

Pin = +20 dBm

f = 465 MHz

PG

300

VDS = 3.6 V

Pin = +20 dBm

f = 465 MHz

PAE


vs. Input Power

Pow

er

Ga

in P

G

(dB

)



vs. Input Power

Outp

ut P

ow

er

P

out (

dB

m)

Pow

er A

dded E

ffic

iency P

AE

(%

)


Dra

in C

urr

ent I D

(A

)

0 5 15 3010 20 250

30

10

20

40

0

20

40

60

10

15

25

40

0

1

2.5

20

1.5

VDS = 7 V

IDQ = 200 mA

f = 465 MHz

ID

30

35

0.5

2

3 80

0 5 15 3010 20 25

VDS = 7 V

IDQ = 200 mA

f = 465 MHz

PAE

PG

Pout

Pow

er

Ga

in P

G

(dB

)

3 3.5 4 54.5



0

10

40

30

20

0

20

80

60

40




10

30

40

0

2

IDQ = 200 mA

f = 465MHz

Pin=+20dBm

3

35

20

4 4.5 5

ID

Pout

3

Pow

er A

dded E

ffic

iency P

AE

(%

)

3.5

1

Outp

ut P

ow

er

P

out (

dB

m)

Dra

in C

urr

ent I D

(A

)


IDQ = 200 mA

f = 465 MHz

Pin=+20dBm

PG

PAE

15

25

0.5

1.5

2.5


R07DS0492EJ0200 Rev.2.00 of 21 Jun 29, 2011


vs. Frequency

10

20

40

0

1

3

25

15

2

470 490

Pout

ID

4400

10

30

20

40

80

15

5

6020

25

30

50

70

Pow

er

Ga

in P

G

(dB

)

440 470 490


vs. Frequency

Pow

er

Added E

ffic

iency

PA

E

(%)

30

35

0.5

1.5

2.5

Frequency f (MHz)

Dra

in C

urr

ent I D

(A

)

Outp

ut P

ow

er

P

out (

dB

m)

Frequency f (MHz)

PG

VDS = 7V

IDQ = 200 mA

Pin = +25dBm

PAE

Pow

er

Ga

in P

G

(dB

)

0 100 200 500400


vs. Idling Current

0

10

40

30

20

0

20

80

60

40


vs. Idling Current

10

30

40

2.5

3

35

20

300 400 5000

Pow

er

Added E

ffic

iency

PA

E

(%)

200

1

Outp

ut P

ow

er

P

out (

dB

m)

Dra

in C

urr

ent I D

(A

)


25

15

1.5

2

0.5

0100

Pout

ID

VDS = 7V

Pin = +25 dBm

f = 465 MHz

PG

300

VDS = 7 V

Pin = +25 dBm

f = 465 MHz

PAE

450 460 480 450 460 480

Pow

er

Ga

in P

G

(dB

)

2 4 6 108



0

10

40

30

20

0

20

80

60

40




10

30

50

0

2

IDQ = 200 mA

Pin = +25dBm

f = 465MHz

4

40

20

3

6 8 10

ID

Pout

2

Pow

er

Added E

ffic

iency

PA

E

(%)

PAE

4

1

Outp

ut P

ow

er

P

out (

dB

m)

Dra

in C

urr

ent I D

(A

)


PG

VDS = 7V

IDQ = 200 mA

Pin = +25dBm

IDQ = 200 mA

Pin = +25dBm

f = 465MHz


R07DS0492EJ0200 Rev.2.00 of 21 Jun 29, 2011

Evaluation Circuit (f = 465 MHz@VDS=4.8V)

RFOUTRFIN

VG VD

C1

C2

C5

C8 C10

L1

L3R1

C1, C5, C11, C12

C2, C8

C3

C4, C9, C10

C6, C13

C7, C14

L1

L2

L3

R1

R2

50 Ω50 Ω

C14

C12

C11

R2

C3 C4C9

C7

L2






1 μF / 35 V Chip Tantalum Capacitor

1 nH Chip Inductor



670 Ω Chip Resistor

6.8 kΩ Chip Resistor

C6 C13


R07DS0492EJ0200 Rev.2.00 of 21 Jun 29, 2011

Frequency f (MHz)

Po

we

r G

ain

P

G

(dB

)


vs. Frequency Input Return Loss vs. Frequency

460 470 480

Frequency f (MHz)

450

Power Gain, Power Added Efficiency,


Pow

er

Ga

in P

G (d

B)


15

17

21

40

50

IDQ = 300 mA

f = 465 MHz

Pin = +17 dBm

70

18

16

60

5 6 7 8

PG

PAE

3


vs. Input Power

Pow

er

Ga

in P

G

(dB

)



vs. Input PowerO

utp

ut P

ow

er

P

out (

dB

m)

Pow

er A

dded E

ffic

iency P

AE

(%

)

Pow

er A

dded E

ffic

iency P

AE

(%

)

Input R

etu

rn L

oss R

L (d

B)

Pow

er A

dded E

ffic

iency P

AE

(%

)


40

60

80

50

70

16

18

20

17

19

15

17

21

40

50

VDS = 4.8 V

f = 465 MHz

Pin = +17 dBm

70

18

16

6019

20

45

55

65

Pow

er

Ga

in P

G

(dB

)

Idling Current IDQ (A)

0 0.1 0.2 0.3 0.50.4


vs. Idling Current

Pow

er A

dded E

ffic

iency P

AE

(%

)

PAE

PG

PAE

VDS = 4.8 V

IDQ = 300 mA

Pin = +17 dBm

-30

-15

-5

-10

0

4

Dra

in C

urr

ent I D

(A

)

-25

-20

465 475455

19

20

45

55

65

PG

460 470 480450 465 475455

VDS = 4.8 V

IDQ = 300 mA

Pin = +17 dBm

0 5 15 3010 20 250

5

10

20

25

0

20

40

60

80

0

10

15

25

40

0

0.6

1.2

1.4

20 0.8

0.2

VDS = 4.8 V

IDQ = 300 mA

f = 465 MHz

ID

PAE

PG

5

30

35

0.4

1.0

1.6

15

100

Pout

0 5 15 3010 20 25

VDS = 4.8 V

IDQ = 300 mA

f = 465 MHz


R07DS0492EJ0200 Rev.2.00 of 21 Jun 29, 2011

Evaluation Circuit (f = 520 MHz)

OUTIN

VG VD

C1

C2

C4

C7 C9

L2

L1

L3

R1

C1, C4, C10, C11

C2

C3

C5, C12

C6, C13

C7

C8

C9

L1

L2

L3

R1

R2

50 Ω50 Ω

C12

C11

C10

R2

C5

C3C8

C6 C13



5 pF Chip Capacitor


1 μF Chip Tantalum Capacitor



7 pF Chip Capacitor


1 nH Chip Inductor


670 Ω Chip Resistor

6.8 kΩ Chip Resistor


R07DS0492EJ0200 Rev.2.00 of 21 Jun 29, 2011

Frequency f (MHz)

450 470 490 510 530 550

Po

we

r G

ain

P

G

(dB

)


vs. Frequency Input Return Loss vs. Frequency

470 490 510 530 550

Frequency f (MHz)

450

Pow

er

Ga

in

PG

(d

B)

Idling Current IDQ (A)

0 0.1 0.2 0.3 0.50.4


vs. Idling Current

VDS = 6 V

f = 520 MHz

Pin = +25 dBm

0

5

20

15

10

60

65

80

75

70

Power Gain, Power Added Efficiency,


Pow

er

Ga

in

PG

(d

B)


0

10

20

30

50

IDQ = 180 mA

f = 520 MHz

Pin = +25 dBm

70

15

5

60

5 6 7 8 9

PG

PAE

3


vs. Input Power

Pow

er

Ga

in

PG

(d

B)



vs. Input PowerO

utp

ut

Pow

er

P

ou

t (

dB

m)

Po

we

r A

dd

ed

Effic

ien

cy

PA

E

(%)

Po

we

r A

dd

ed

Effic

ien

cy

PA

E

(%)

Inp

ut

Re

turn

Lo

ss

RL

(d

B)

Po

we

r A

dd

ed

Effic

ien

cy

PA

E

(%)

Po

we

r A

dd

ed

Effic

ien

cy

PA

E

(%)


0

40

80

20

60

0

10

20

5

15

PG

PAE

VDS = 6 V

IDQ = 180 mA

Pin = +25 dBm

PG

PAE

VDS = 6 V

IDQ = 180 mA

Pin = +25 dBm

-20

-15

-5

-10

0

4

40

Dra

in C

urr

en

t

I D

(A)

PAE

PG

0

5

10

20

25

0

20

40

60

80

0 5 15 3010 20

VDS = 6 V

f = 520 MHz

IDQ = 180 mA

15

100

0

10

15

25

40

0

0.6

1.2

1.4

0 5 15 3010 20

20 0.8

0.2

VDS = 6 V

f = 520 MHz

IDQ = 180 mA

ID

Pout

5

30

35

0.4

1.0

1.6

25 25


R07DS0492EJ0200 Rev.2.00 of 21 Jun 29, 2011

10

54

3

2

1.51.8

-2

-3

-4-5

-10

.6

.4

.2

0

-.2

-.4

-.6-.8 -1

-1.5

.2 .4 .6 .8 1 2 3 4 51.5 10

10

54

3

2

1.51.8

-2

-3

-4-5

-10

.6

.4

.2

0

-.2

-.4

-.6-.8 -1

-1.5

.2 .4 .6 .8 1 2 3 4 51.5 10

Scale: 5 / div.

S11 Parameter vs. Frequency S21 Parameter vs. Frequency

Scale: 0.01 / div.


30°

60°

90°

120°

150°

180°

-150°

-90°

-60°

-30°

-120°

0°

Test condition:

VDS = 6 V, IDQ = 180 mA, ZO = 50 Ω

100 to 1000 MHz (50 MHz step)

1000 to 2500 MHz (100 MHz step)

Test condition:

VDS = 6 V, IDQ = 180 mA, ZO = 50 Ω


1000 to 2500 MHz (100 MHz step)

Test condition:

VDS = 6 V, IDQ = 180 mA, ZO = 50 Ω


1000 to 2500 MHz (100 MHz step)

Test condition:

VDS = 6 V, IDQ = 180 mA, ZO = 50 Ω


1000 to 2500 MHz (100 MHz step)

30°

60°

90°

120°

150°

180°

-150°

-90°

-60°

-30°

-120°

0°


R07DS0492EJ0200 Rev.2.00 of 21 Jun 29, 2011

Scale: 5 / div.


Scale: 0.01 / div.


10

54

3

2

1.51.8

-2

-3

-4-5

-10

.6

.4

.2

0

-.2

-.4

-.6-.8 -1

-1.5

.2 .4 .6 .8 1 2 3 4 51.5 10

30°

60°

90°

120°

150°

180°

-150°

-90°

-60°

-30°

-120°

0°

10

54

3

2

1.51.8

-2

-3

-4-5

-10

.6

.4

.2

0

-.2

-.4

-.6-.8 -1

-1.5

.2 .4 .6 .8 1 2 3 4 51.5 10

Test condition:

VDS = 4.8 V, IDQ = 300 mA, ZO = 50 Ω


1000 to 2500 MHz (100 MHz step)

0°

30°

60°

90°

120°

150°

180°

-150°

-90°

-60°

-30°

-120°

Test condition:

VDS = 4.8 V, IDQ = 300 mA, ZO = 50 Ω


1000 to 2500 MHz (100 MHz step)

Test condition:

VDS = 4.8 V, IDQ = 300 mA, ZO = 50 Ω


1000 to 2500 MHz (100 MHz step)

Test condition:

VDS = 4.8 V, IDQ = 300 mA, ZO = 50 Ω


1000 to 2500 MHz (100 MHz step)


R07DS0492EJ0200 Rev.2.00 of 21 Jun 29, 2011

S Parameter

(VDS = 6 V, IDQ = 180 mA, Zo = 50 )

S11 S21 S12 S22

f (MHz) MAG ANG (deg.) MAG ANG (deg.) MAG ANG (deg.) MAG ANG (deg.)

100 0.868 -154.0 9.85 88.8 0.019 1.2 0.706 -166.8 150 0.861 -159.4 5.42 77.2 0.018 -6.3 0.725 -168.9 200 0.882 -163.9 3.64 68.2 0.016 -14.1 0.755 -170.6 250 0.892 -166.8 2.64 58.5 0.016 -19.2 0.768 -170.6 300 0.899 -169.5 2.06 51.8 0.014 -22.1 0.792 -171.2 350 0.910 -171.6 1.61 45.1 0.013 -27.2 0.805 -171.5 400 0.918 -173.4 1.28 40.3 0.013 -29.3 0.827 -172.2 450 0.926 -175.2 1.04 36.0 0.011 -34.1 0.840 -173.1 500 0.932 -176.8 0.84 31.8 0.010 -33.1 0.855 -173.8 550 0.936 -178.2 0.73 28.8 0.009 -34.5 0.869 -174.6 600 0.940 -179.5 0.62 26.4 0.008 -34.6 0.880 -175.6 650 0.941 179.2 0.54 23.1 0.007 -36.5 0.892 -176.5 700 0.944 178.1 0.45 20.2 0.006 -32.7 0.901 -177.3 750 0.945 176.9 0.41 18.3 0.006 -32.0 0.906 -178.0 800 0.944 175.9 0.37 16.4 0.005 -25.3 0.915 -179.4 850 0.944 174.6 0.31 13.9 0.004 -22.3 0.919 180.0 900 0.943 173.4 0.30 12.1 0.004 -15.2 0.929 178.9 950 0.943 172.3 0.26 10.6 0.003 0.3 0.930 178.1

1000 0.946 171.1 0.23 8.6 0.003 9.1 0.936 177.2 1050 0.949 170.2 0.22 7.3 0.003 20.6 0.940 176.5 1100 0.951 169.4 0.21 6.5 0.004 36.9 0.943 175.5 1150 0.952 168.7 0.18 5.3 0.004 40.3 0.944 174.7 1200 0.952 167.8 0.18 4.3 0.004 52.0 0.950 174.1 1250 0.952 167.0 0.16 3.7 0.005 53.2 0.951 173.3 1300 0.952 166.2 0.14 2.2 0.005 56.8 0.949 172.6 1350 0.952 165.4 0.14 1.3 0.006 60.9 0.956 171.7 1400 0.952 164.6 0.13 0.8 0.006 64.0 0.958 171.0 1450 0.952 164.0 0.12 0.1 0.007 62.2 0.957 170.3 1500 0.952 163.3 0.11 -0.8 0.008 65.4 0.956 169.5 1550 0.952 162.1 0.11 -1.8 0.008 65.9 0.959 168.5 1600 0.952 160.8 0.10 -2.7 0.009 65.6 0.960 168.2 1650 0.952 159.7 0.10 -3.6 0.009 65.9 0.960 167.4 1700 0.952 158.5 0.09 -4.5 0.010 66.6 0.962 166.4 1750 0.952 157.3 0.08 -4.7 0.010 66.2 0.967 165.8 1800 0.952 156.4 0.08 -5.0 0.011 66.5 0.968 165.3 1850 0.952 155.7 0.08 -4.7 0.011 66.5 0.965 164.5 1900 0.953 154.7 0.07 -4.9 0.012 67.0 0.967 163.7 1950 0.958 153.9 0.07 -5.2 0.012 67.0 0.976 163.2 2000 0.965 153.6 0.07 -4.6 0.013 65.5 0.972 162.9 2050 0.963 153.3 0.07 -4.9 0.013 65.4 0.972 161.9 2100 0.956 152.9 0.06 -4.2 0.014 65.3 0.976 161.0 2150 0.950 152.2 0.06 -3.5 0.014 65.2 0.981 160.7 2200 0.944 151.6 0.06 -3.8 0.015 63.9 0.977 160.1 2250 0.936 150.7 0.06 -3.5 0.015 63.9 0.977 159.5 2300 0.932 149.3 0.05 -3.4 0.016 63.0 0.978 158.9 2350 0.932 148.1 0.05 -3.6 0.016 62.8 0.981 158.4 2400 0.929 147.3 0.05 -3.0 0.017 63.0 0.977 158.0 2450 0.923 146.3 0.05 -3.6 0.017 61.3 0.977 157.2 2500 0.917 144.9 0.05 -3.0 0.017 61.8 0.980 156.8


R07DS0492EJ0200 Rev.2.00 of 21 Jun 29, 2011

S Parameter

(VDS = 4.8 V, IDQ = 300 mA, Zo = 50 )

S11 S21 S12 S22

f (MHz) MAG ANG (deg.) MAG ANG (deg.) MAG ANG (deg.) MAG ANG (deg.)

100 0.772 -157.0 9.63 88.9 0.013 -1.0 0.776 -172.1 150 0.794 -162.8 5.54 79.0 0.013 -6.3 0.784 -173.8 200 0.812 -167.3 3.91 71.6 0.012 -11.1 0.799 -174.8 250 0.818 -170.4 2.98 64.7 0.011 -13.5 0.805 -174.8 300 0.824 -173.1 2.36 59.1 0.011 -15.2 0.818 -175.0 350 0.831 -175.0 1.92 53.6 0.011 -20.4 0.824 -175.1 400 0.836 -176.6 1.60 48.7 0.010 -21.4 0.837 -175.4 450 0.841 -178.3 1.36 44.8 0.009 -23.3 0.843 -175.8 500 0.848 -179.9 1.15 40.5 0.008 -22.9 0.859 -176.8 550 0.851 179.0 1.00 37.1 0.008 -22.2 0.868 -177.1 600 0.851 177.7 0.87 33.9 0.007 -24.8 0.874 -177.4 650 0.852 176.3 0.77 30.7 0.006 -24.2 0.887 -177.8 700 0.854 174.7 0.69 27.9 0.006 -20.5 0.896 -178.8 750 0.858 173.3 0.60 24.8 0.005 -18.2 0.901 -179.1 800 0.865 171.9 0.54 22.3 0.005 -15.1 0.905 -179.8 850 0.873 170.8 0.49 20.2 0.005 -12.2 0.911 179.5 900 0.878 169.8 0.45 17.9 0.004 -1.7 0.918 178.9 950 0.880 168.8 0.41 16.1 0.004 4.3 0.922 178.3

1000 0.882 167.7 0.37 14.2 0.004 11.2 0.932 177.8 1050 0.886 166.5 0.35 12.4 0.004 21.6 0.931 177.1 1100 0.889 165.5 0.32 10.7 0.004 29.8 0.935 176.5 1150 0.893 164.4 0.29 8.9 0.004 33.2 0.939 175.8 1200 0.898 163.3 0.27 7.5 0.004 40.9 0.944 175.1 1250 0.902 162.4 0.26 6.2 0.005 46.7 0.943 174.6 1300 0.901 161.3 0.23 4.7 0.005 50.8 0.948 174.1 1350 0.902 160.0 0.22 3.3 0.005 54.5 0.948 173.4 1400 0.904 158.7 0.21 1.8 0.006 57.8 0.954 173.1 1450 0.907 157.7 0.19 0.4 0.006 55.3 0.954 172.5 1500 0.904 156.5 0.18 -0.8 0.007 60.5 0.953 171.6 1550 0.905 155.1 0.17 -2.4 0.007 62.1 0.958 171.0 1600 0.912 153.8 0.16 -3.1 0.007 61.1 0.959 170.7 1650 0.915 152.8 0.15 -4.2 0.008 64.3 0.956 170.4 1700 0.919 151.5 0.14 -5.8 0.008 63.2 0.958 169.3 1750 0.926 149.9 0.14 -6.8 0.009 62.7 0.964 168.9 1800 0.938 148.8 0.13 -7.8 0.009 63.0 0.965 168.4 1850 0.942 147.9 0.13 -8.6 0.010 62.6 0.963 167.8 1900 0.942 146.7 0.12 -9.3 0.010 61.9 0.965 167.0 1950 0.945 145.5 0.11 -10.2 0.010 63.8 0.968 166.6 2000 0.946 144.7 0.11 -10.6 0.011 62.4 0.965 166.3 2050 0.942 143.7 0.11 -11.2 0.011 62.2 0.969 165.5 2100 0.939 142.3 0.10 -11.8 0.012 61.2 0.973 164.9 2150 0.940 140.9 0.10 -12.5 0.012 62.0 0.974 164.6 2200 0.942 139.8 0.09 -13.3 0.012 61.3 0.974 164.2 2250 0.939 138.3 0.09 -14.3 0.013 59.2 0.974 163.4 2300 0.937 136.8 0.08 -15.3 0.013 59.6 0.976 163.0 2350 0.937 135.4 0.08 -16.3 0.014 59.8 0.977 162.9 2400 0.935 134.1 0.08 -17.5 0.014 58.9 0.972 162.0 2450 0.932 132.8 0.07 -18.1 0.014 57.9 0.975 161.5 2500 0.931 131.3 0.07 -18.7 0.014 57.7 0.977 161.2


R07DS0492EJ0200 Rev.2.00 of 21 Jun 29, 2011

Package Dimensions

4.5 ± 0.1

1.8 Max1.5 ± 0.1

0.44 Max

0.44 Max0.48 Max

0.53 Max

1.5 1.5

3.0

2.5

± 0

.1

4.2

5 M

ax

0.8

Min

φ 1

0.4 (1.5)

(2.5

)(0

.4)

(0.2

)

Previous Code

PLZZ0004CA-A UPAK / UPAKV

MASS[Typ.]

0.050gSC-62

RENESAS CodeJEITA Package CodeUnit: mm

Package Name

UPAK

Ordering Information

Orderable Part Number Quantity Shipping Container

RQA0009TXTL-E 1000 pcs. 178 mm reel, 12 mm emboss taping

Notice1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas

Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to

be disclosed by Renesas Electronics such as that disclosed through our website.

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which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the

use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics.

The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc.

"Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools;

personal electronic equipment; and industrial robots.

"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically

designed for life support.

"Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical

implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.

8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage

range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the

use of Renesas Electronics products beyond such specified ranges.

9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and

malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the

possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to

redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,

please evaluate the safety of the final products or system manufactured by you.

10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics

products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes

no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.

11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics.

12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.

(Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.

(Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.

http://www.renesas.comRefer to "http://www.renesas.com/" for the latest and detailed information.

Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.Tel: +1-408-588-6000, Fax: +1-408-588-6130Renesas Electronics Canada Limited1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, CanadaTel: +1-905-898-5441, Fax: +1-905-898-3220Renesas Electronics Europe LimitedDukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.KTel: +44-1628-585-100, Fax: +44-1628-585-900Renesas Electronics Europe GmbHArcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd.7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679Renesas Electronics (Shanghai) Co., Ltd.Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong LimitedUnit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong KongTel: +852-2886-9318, Fax: +852 2886-9022/9044Renesas Electronics Taiwan Co., Ltd.13F, No. 363, Fu Shing North Road, Taipei, TaiwanTel: +886-2-8175-9600, Fax: +886 2-8175-9670Renesas Electronics Singapore Pte. Ltd. 1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632Tel: +65-6213-0200, Fax: +65-6278-8001Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, MalaysiaTel: +60-3-7955-9390, Fax: +60-3-7955-9510Renesas Electronics Korea Co., Ltd.11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, KoreaTel: +82-2-558-3737, Fax: +82-2-558-5141

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