p.p. allport, g. casse, a. evans, m. tyndel, r. turchetta, j.j. velthuis, g. villani
DESCRIPTION
Design and Characterization of a Novel, Radiation-Resistant Active Pixel Sensor in a Standard 0.25 m CMOS Technology. P.P. Allport, G. Casse, A. Evans, M. Tyndel, R. Turchetta, J.J. Velthuis, G. Villani. CMOS APS detectors: principle & characteristics Novel CMOS detector structure HEPAPS3 - PowerPoint PPT PresentationTRANSCRIPT
Rutherford Appleton LaboratoryParticle Physics Department
G. Villani IEEE NSS Rome, October 2004
Design and Characterization of a Novel, Design and Characterization of a Novel, Radiation-Resistant Active Pixel Sensor in Radiation-Resistant Active Pixel Sensor in
a Standard 0.25 a Standard 0.25 m CMOS Technologym CMOS Technology
P.P. Allport, G. Casse, A. Evans, M. Tyndel, R. Turchetta, J.J. Velthuis, G. Villani
Rutherford Appleton LaboratoryParticle Physics Department
G. Villani IEEE NSS Rome, October 2004
OutlineOutline
• CMOS APS detectors: principle & characteristics• Novel CMOS detector structure• HEPAPS3• Conclusions
Rutherford Appleton LaboratoryParticle Physics Department
G. Villani IEEE NSS Rome, October 2004
MAPS CMOS detectorsMAPS CMOS detectors
readout
Column parallel ADC
Data processing -out stage
control
3 MOS APS structure
Detector and readout integrated onto the same substrate
≈10
Rutherford Appleton LaboratoryParticle Physics Department
G. Villani IEEE NSS Rome, October 2004
CMOS detectors for HEPCMOS detectors for HEP
Generated charge diffuses through epitaxial layer and substrate untilrecombines or gets collected by cathode
-
-
+
+
+
+
+
-- -
--
-
P++
Pepi
PwellNwell
Internal electric field 3D viewVbias = 2V applied to N+
Well 30 ns Transient Electron Current
Rutherford Appleton LaboratoryParticle Physics Department
G. Villani IEEE NSS Rome, October 2004
Reference : HEPAPS2 0.25 μm CIS TSMC
N
P
epi
subs
Simulated ∆v in-cell
Tests results ∆v in-cell
CMOS detectors for HEP-Charge collection and response timeCMOS detectors for HEP-Charge collection and response time
Rutherford Appleton LaboratoryParticle Physics Department
G. Villani IEEE NSS Rome, October 2004
CMOS detectors for HEP-Radiation HardnessCMOS detectors for HEP-Radiation Hardness
T = 300 K
T = 253 K
No RAD
RAD 1014
Test results S/N ratio vs number of pixels
Charge collected mainly by diffusion: Radiation Bulk damage seriously impacts onto charge collection efficiency
5.0
2
int
-2-int
ee
,,,
egrrmsRSTrms
coll yxntyx
N
S
Example of S/N calculation under Hard Reset assumption Vbias = 2VHEPAPS2 0.25 μm CIS TSMC
Example of simulation radiation degradation@ to bulk damage Ф = 1014 24GeV p
J. VelthuisJ. Velthuis University of Liverpool University of Liverpool
Rutherford Appleton LaboratoryParticle Physics Department
G. Villani IEEE NSS Rome, October 2004
Novel CMOS structure for HEPNovel CMOS structure for HEPDeep N Well process allows electric field to be introduced into active region
N
P
epi
subs
Internal electric field plot
Deep N Well
Cell structure comparison
Rutherford Appleton LaboratoryParticle Physics Department
G. Villani IEEE NSS Rome, October 2004
Deep N Well Epi collected chargeDeep N Well Epi collected charge
HEPAPS DNW-Epi Heavy Ion MIP Simulation Results:
Collection time max: 8 nS
<Collected charge> (Ф = 0) = 261 e-
<Voltage Drop> (Ф = 0) = 1.8 mV
Leakage Current (Ф = 0 ) 65 fA
Capacitance ( Ф = 0 ) 22 fF
HEPAPS DNW-Epi simulation
conditions:
Vbias = 2V
Cstray = 2 fF
Tint = 20 ns
3x3 Cells ( size 15x15 m)
Ilk vs. bias voltage Capacitance vs. bias voltage
Rutherford Appleton LaboratoryParticle Physics Department
G. Villani IEEE NSS Rome, October 2004
Radiation Hardness and Signal to noise ratio comparisonRadiation Hardness and Signal to noise ratio comparison
No RAD RAD 1014
Deep N Well Epi Example of S/N calculation HR Vbias = 2 APS2 0.25 μm DNW 8 m Epitaxial layer TSMC MS
HEPAPS2 Example of S/N calculation HR Vbias = 2 APS2 0.25 μm 8 m Epitaxial layer TSMC CIS
Rutherford Appleton LaboratoryParticle Physics Department
G. Villani IEEE NSS Rome, October 2004
HEPAPS3 Deep N WellHEPAPS3 Deep N WellN
P
subs
TSMC MS 0.25 mNo epitaxial layerDifferent flavors on chip
HEPAPS3HEPAPS3: No Epitaxial layer, Lowly Doped Substrate TSMC MSSlower collectionHigher spreadCharge collected much dependent on diffusion in undepleted substrateHEPAPS3 Simulation Results:HEPAPS3 Simulation Results:
Collection time max: 14 nS
<Collected charge> (Ф = 0) = 338 e-
<Voltage Drop> (Ф = 0) = 1.9 mV
Leakage Current (Ф = 0 ) 65 fA
Capacitance ( Ф = 0 ) 26 fF
Rutherford Appleton LaboratoryParticle Physics Department
G. Villani IEEE NSS Rome, October 2004
HEPAPS3 test resultsHEPAPS3 test results
HEPAPS3: No Epitaxial layer Lowly Doped Substrate TSMC MSLarge signalHuge cluster size( charge diffusion trough undepleted substrate)
HEPAPS3: example of cluster in S/N106Ru source
J. VelthuisJ. Velthuis University of Liverpool University of Liverpool
HEPAPS3: example of cluster signal distribution DNW106Ru source
HEPAPS3: example of noise signal distribution DNW
Rutherford Appleton LaboratoryParticle Physics Department
G. Villani IEEE NSS Rome, October 2004
Topology optimization of MAPS still ongoing, but future HEP experiments call for uncompromisingly high radiation resistant structures
ConclusionsConclusions
HEPAPS3 preliminary tests results and simulations suggest Deep N Well process with epitaxial layer might show good performances at high level of radiation
Synergy between new design topologies and Deep N Well process required to fully exploit the potential benefits
Deep N Well with Epitaxial layer introduces drift component in collection charge process
Rutherford Appleton LaboratoryParticle Physics Department
G. Villani IEEE NSS Rome, October 2004
HEPAPS2 simulation 4 Diodes versionHEPAPS2 simulation 4 Diodes version
Simulation shows better charge collection at 1014
IrradiationTests ongoing
Cell structure