GaN Systems – Confidential – 1

GSDN001Double Pulse Test Results for the GS-065-0xx-1-L PDFNs

December 2018

GaN Systems – Confidential – 2

Introduction

PURPOSEThe Double Pulse Test (DPT) is used to characterize the turn-onand turn-off characteristics of switching power transistors.

CONTENTThis document provides the following information• An overview of the DPT set up • DPT results for GaN Systems’ PDFN E-HEMTS

• GS-065-004-1-L• GS-065-008-1-L • GS-065-011-1-L

GaN Systems – Confidential – 3

Double Pulse Test Overview

GaN Systems – Confidential – 4

GS-065-004-1-L: Double Pulse Test at 3.5A

400V DPT at IL= 3.5A

VGS

VDS

IIND

400V

VGS

VDS

IDS

Turn-on

VGS

VDS

IDS

Turn-off

400V

3.5A3.5A

6V6V

GS-065-004-1-L

Parameter Value

VDS 650 V

ID 3.5 A

RDS(on) 500 mΩ

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GS-065-008-1-L: Double Pulse Test at 8A

400V DPT at IL = 8A

VGS

VDS

IIND

VGS

VDS

IDS

VGS

VDS

IDS

Turn-on Turn-off

400V400V

8A

8A

6V6V

GS-065-008-1-L

Parameter Value

VDS 650 V

ID 8 A

RDS(on) 225 mΩ

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GS-065-011-1-L: Double Pulse Test at 11A

400V DPT at IL = 11A

VGS

VDS

IIND

VGS

VDS

IDS

VGS

VDS

IDS

Turn-on Turn-off

400V

400V

8A8A

6V6V

GS-065-011-1-L

Parameter Value

VDS 650 V

ID 11 A

RDS(on) 125 mΩ

GaN Systems – Confidential – 7

Summary

The DPT results were provided for GaN Systems’ GS-065-004-1-L, GS-065-008-1-L and GS-065-011-1-L E-HEMTs.

To contact GaN Systems for additional product and application support, please visit our website at https://gansystems.com/contact/.