Power Semiconductor Devices Power Diodes

Cross-sectional view of a pn-junction diode intended for power applications.

I-V characteristics of a pn-junction diode

Breakdown Voltage of Non-Punch-through Diodes

for silicon.

Punch-through in a reverse-biased diode (a) reverse-biased diode with depletion layer extending completely across the drift region- punch-through condition (b) electric field profile of the punch-through condition in a reverse-biased diode

Breakdown Voltage of Punch-through Diodes

doping in the n- drift region is negligible

Depletion Layer Boundary Control

Depletion Layer Boundary Control

On-State Losses: Role of On-Resistance

Turn-On Transient Turn-Off Transient

Reverse Recovery

Schottky Diodes

Power MOSFETs

Basic Structure

Power MOSFETs

Basic Structure

Power MOSFETs

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor