POLYSILICON MATERIALS

GCL is a global leading supplier of both polysilicon and wafer. For polysilicon manufacturing, GCL adopts the

“GCL-method” which is a proprietay production technology backed by patents, and utilize he closed-loop

hydro-chlorination process to effectively recycle silicon tetrachloride and hydrochloride, the two main

by-products of polysilicon production. IAs such, GCL not only effectively controls the environmental pollution

caused by polysilicon production, but also significantly lowers its unit production cost.

GCL provides high-quality solar grade and semiconductor grade/electronic grade polysilicon raw materials,

with N-type resistivity of polysilicon reaching 200 ~ 500 Ω·cm, and purity reaching 9-nines to 11-nines.

Appearance and Features

Property Specification

Qualified materials

Coral materials

Wastes

Miscellaneous items

Appearance

Product Specifications

Polysilicon blocks or bars, of which quality indicators are in line with contractual requirements. The appearance and surface of the materials are compact and smooth. There may be cracks with depths below 3 mm but no interlayers exist.

Polysilicon blocks or bars. For materials with appearance and surface that are neither compact nor smooth or in which there are cracks with depths of above 3mm, if the quality of such materials is in line with contractual requirements, such materials shall be classified as coral materials regardless of ratios

Silicon particles and materials with graphite with size below 3mm

Silicon materials not classified as qualified materials, coral materials or wastes

Electrical Properties

Conductivity Type/ Dopant

Resistivity

Brick Lifetime

Oxygen Concentration

Carbon Concentration

Total metal impurities:

Fe、Cr、Ni、Cu、Zn

Benefactor impurities concentration (P)

Acceptor impurities concentration

Resistivity

Grade Electronic Grade Solar Grade Ⅰ Solar GradeⅡ Solar GradeⅢ

N/phosphorus

≥250 Ω·cm

≥1000 Ω·cm

≥100 µs

≤1.0×1017atoms/cm3

≤2.5×1016atoms/cm3

≤0.3ppba

≤0.3ppba

≤0.03ppmw

N/phosphorus

≥100 Ω·cm

≥500 Ω·cm

≥100 µs

≤1.0×1017atoms/cm3

≤2.5×1016atoms/cm3

≤1.5ppba

≤0.5ppba

≤0.05ppmw

N/phosphorus

≥40 Ω·cm

≥200 Ω·cm

≥50 µs

≤1.0×1017atoms/cm3

≤4.0×1016atoms/cm3

≤3.76ppba

≤1.3ppba

≤0.1ppmw

N/phosphorus

≥20 Ω·cm

≥100 Ω·cm

≥30 µs

≤1.5×1017atoms/cm3

≤4.5×1016atoms/cm3

≤7.74ppba

≤2.7ppba

≤0.2ppmw