polypyrrole (ppy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (ofet)...

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Poly (3,4-ethylenedioxythiophene)(PEDOT)ı polypyrrole (PPy) ƒ s 6 x ˙ ˜»l > ·ı t…’ (OFET)_ /$ ‰¤ y ' & n q ƒ 9@/ < ˘§@ / < ˘ü to < ˘ı December 26, 2003

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Page 1: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

Poly (3,4-ethylenedioxythiophene)(PEDOT)õ�

polypyrrole (PPy)�¦ s�6 xô�Ç Ä»l� ���>�òõ�

àÔ�½�t�Û¼'�(OFET)_� :£¤$í���½

y©��&³nq

�¦�9@/�<Æ�§ @/�<Æ"é¶

Óüto��<Æõ�

December 26, 2003

Page 2: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

Abstract

Electrical characteristics of all polymer based field effect transistors (FET)

are studied. Conjugated poly (3,4-ethylenedioxythiophene) (PEDOT) and

polypyrrole (PPy) were used for gate electrode and active layer, which were

made by photolithography micro-patterning. Polyvinyle cinnamate (PVCN)

and epoxy were used for insulating layer through spin coating. From the cur-

rent (I ) - voltage (V ) characteristic curves of all polymer based FETs, the

source-drain current (Ids) of the devices decreased with increasing positive

gate bias Vg, indicating p-type FETs operating in a depletion mode. With

negative Vg the Ids of the devices weakly increased. Depending on the channel

length between the contacts of source and drain electrodes, the on-off current

ratio (Ion/Ioff) was changed. We analyzed these results based on the ”bottle-

neck” effect. Also temperature dependence of Ids as a function of Vg of the

FET devices is discussed.

Page 3: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

Abstract

Polymer\�¦s�6 xô�Ç���>�òõ�àÔ�½�t�Û¼'�(FET)_����l�&h�:£¤$í�¦���½ �

%i���. ����$í poly (3,4-ethylenedioxythiophene) (PEDOT) and polypyrrole

(PPy)�¦ l�íß�×�æ½+Ëܼ�Ð >�s�àÔ ����FGõ� �Ö$í8£x�¦ ëß�[þt%3���. Polyvinyle cin-

namateü< epoxy\�¦ Û¼�2; �ïh�A ~½ÓZO�ܼ�Ð ]X����8£x�¦ ëß�[þt%3���. Polymer\�¦ s�6 x

�#� ëß���H FET_� ���ÀÓ(I ) - ���·ú�(V ) :£¤$íܼ�ÐÂÒ'� device\� �ª�_� gate ���

·ú�V�¦ �� ���� source(S)ü< drain(D)_� ���ÀÓ (Ids)��H y���è � 9 /BN�9��×¼\�"f

���1lx÷&��H p-type FET�Ð ����z�¤��. 6£§_� Vg�¦ �� ���� Ids��H ��FK 7£x��ô�Ç��.

Sourceü< Drain_� ����FG ]X�8ú¤ G�V,� U�s�\� _��>r ���H ���ÀÓ &h�Y>�q�(Ion/Ioff)_�

����o\�¦ �'a¹1Ï �%i���. s� ���õ�\�¦ ”bottle-neck” òõ��Ð ì�r$3� �%i���. ¢ô�Ç �:r�

\� ���Ér Vg_� Ids_� _��>r$í\� @/K� ���½ �%i���.

Page 4: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

Contents

1 "�Òeµ 1

2 l� Òeµ 5

2.1 ����$í �¦ì�r�� . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2.2 ��� � ���²ú� �&³�©� . . . . . . . . . . . . . . . . . . . . . . . . . . 8

2.2.1 Variable range hopping (VRH) model . . . . . . . . . . 8

2.2.2 #î3lq�&³�©�[Bottle neck effect] . . . . . . . . . . . . . . . 11

2.2.3 Stretched-Exponential Relaxation . . . . . . . . . . . . 13

2.3 OFET Ä»���8£x_� AC Ä»��� :£¤$í . . . . . . . . . . . . . . . . . 14

2.4 àÔ�½�t�Û¼'� . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

2.4.1 MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . 17

2.4.2 TFT . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

3 �� ��@ 33

3.1 �� ]j��� . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33

3.1.1 l�íß�×�æ½+Ë~½ÓZO�(Photolithographic Patterning Method) . 34

i

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3.1.2 ��� Ä»l� Field Effect transistor (OFET) ]j��� ~½ÓZO� . . . 35

3.2 �è��_� ���l� :£¤$í x9� ½$íÓüt|9�_� 8£¤&ñ~½ÓZO� . . . . . . . . . . . 36

3.2.1 f��ÀÓ ���l� ����� 8£¤&ñ . . . . . . . . . . . . . . . . . . 36

3.2.2 OFET_� Ä»���8£x_� AC Ä»��� �©�ú (dielectric constant)

8£¤&ñ . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37

3.2.3 Soft OFET 8£¤&ñ . . . . . . . . . . . . . . . . . . . . . 37

4 ����@ Úrø� ��� �×�+ 46

4.1 r�«Ñ_� :£¤$í . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46

4.1.1 PEDOT_� f��ÀÓ ����� 8£¤&ñ x9� �:r� _��>r$í ���õ� ì�r$3� 46

4.1.2 ]X����8£x_� Ä»����©�ú . . . . . . . . . . . . . . . . . . . 50

4.2 Soft OFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52

4.2.1 OFET :£¤$í ���õ� . . . . . . . . . . . . . . . . . . . . . 52

4.2.2 OFET ���1lx"é¶o� x9� ½1lx K�"î . . . . . . . . . . . . . . 58

5 Úr Òeµ 66

Bibliography 68

ii

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List of Figures

1.1 {9��+þA_� Ä»��� ��¦ (ìøÍ)ÈÒ"îô�Ç Ä»l� ~ÃÌ}�� àÔ�½�t�Û¼'� . . . . 4

2.1 @/³ð&h���� ���l�����$í �¦ì�r��[þt_� �o�<ƽ� . . . . . . . . . . 7

2.2 #î3lq�&³�©� . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

2.3 s��©�&h���� Metal-insulator-semiconductor ]X�½+Ë_� \��-t� {�ÕªaË> 26

2.4 MIS juction\� ���·ú������r� \��-t�{�����o, (a) »¡¤&h�( V < 0 ),

(b) /BN�9�( V > 0 ), (c) ìøÍ���(V > 0, Ef > Ei) . . . . . . . . . . 27

2.5 MIS ]X�½+Ë\�"f_� >�������·ú�\� ���Ér >������� �_� ����o[23] . . . . 28

2.6 MISFET ½� . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

2.7 MISFET_� Vg − Id:£¤$í/BG��� . . . . . . . . . . . . . . . . . . 30

2.8 MISFET_� Vd − Id:£¤$í/BG��� . . . . . . . . . . . . . . . . . . 31

2.9 TFT_� »¡¤&h�, �í�o�©�I� . . . . . . . . . . . . . . . . . . . . . . 32

3.1 ����$í Óüt|9�õ� ]X����$í Óüt|9� . . . . . . . . . . . . . . . . . . . 40

3.2 l�íß�×�æ½+Ë~½ÓZO� . . . . . . . . . . . . . . . . . . . . . . . . . . . 41

3.3 Ä»���ô�Ç OFET ]j���õ�&ñ . . . . . . . . . . . . . . . . . . . . . 42

3.4 OFET_� >h|ÄÌ� . . . . . . . . . . . . . . . . . . . . . . . . . 43

iii

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3.5 f��ÀÓ ���l� ����� . . . . . . . . . . . . . . . . . . . . . . . . . 44

3.6 AC :£¤$í 8£¤&ñ (Quadtech 7600 Precision RLC Meter) . . . . . 45

4.1 f��ÀÓ ���l� �����_� �:r� _��>r$í z�+«>���õ� . . . . . . . . . . . 49

4.2 Ä»����_� ÅÒ��ú\� ���Ér Ä»����©�ú 8£¤&ñ . . . . . . . . . . . . 51

4.3 PEDOT OFET �è��_� ���ÀÓ - ���·ú� :£¤$í . . . . . . . . . . . . 54

4.4 PPy OFET �è��_� ���ÀÓ - ���·ú� :£¤$í . . . . . . . . . . . . . . 55

4.5 contact G�V,� U�s�\� ���Ér ���ÀÓ - ���·ú� :£¤$í . . . . . . . . . . 56

4.6 contact G�V,� U�s�\� ���Ér ���ÀÓ - ���·ú� :£¤$í . . . . . . . . . . 57

4.7 >�s�àÔ ���·ú�\� ���Ér ����� ����o . . . . . . . . . . . . . . . . 58

4.8 r�çß�õ� Vg\� ���Ér Ids ����o . . . . . . . . . . . . . . . . . . . 61

4.9 Vg = 0 V{9� �âĺ_� Ids_� 1st Stretched-Exponential fitting . . 62

4.10 Vg = 30 V{9� �âĺ_� éß�0Ar�çß�{©� Ids . . . . . . . . . . . . . . 62

4.11 �:r� ����o\� ���Ér �èÛ¼ ×¼YU��� ���ÀÓ ����o . . . . . . . . . . . 63

4.12 /BNl�$íì�r\� ���Ér Vg vs. Ids . . . . . . . . . . . . . . . . . . . 64

iv

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List of Tables

4.1 /BNl�×�æ_� $íì�r¹כ�è . . . . . . . . . . . . . . . . . . . . . . . . 65

v

Page 9: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

Chapter 1

"�Òeµ

1947�� Bell ���½�è_� J. Bardeen, W. Brattain, W. Shockley\� _�K�

germanium àÔ�½�t�Û¼'�[1]�� µ1Ï"î÷&#Q��� s�Êê àÔ�½�t�Û¼'���H ��� ñ7£x;�¤_� ½

z��¦ K� �~�� ���/BN�'a(¨Q�)�¦ @/��� � 9 ����� íß�\O��¦ ��ØÔ>� µ1Ï���r�(����.

Germanium àÔ�½�t�Û¼'���H ��� 80Ò&ñ�_� �:r�µ1Ú\� |�n�t� 3lw ���H ���&h�s�

e��l�\� t��FK�Ér ��� 180Ò s��©�_� �:r�\�� |�v9� ú e����H Óüt|9���� z�o��BH(Si)�¦

s�6 x �#� Áºl�Óüt àÔ�½�t�Û¼'�\�¦ ]j��� �%i���. Õª�Q�� Áºl�Óüt àÔ�½�t�Û¼'���H

1,000Ò�� �Å���H �¦�:r/BN&ñõ� 4�¤ú�ô�Ç /BN&ñõ�&ñ�¦ ½¹כ�l�\� s��Qô�Ç éß�&h��¦

�Т-a �l� 0A �#� $��:r\�"f çß�éß�ô�Ç /BN&ñs� ��0pxô�Ç Ä»l�Óüt àÔ�½�t�Û¼'�\� @/

ô�Ç ���½�� �Öµ1Ïy� ���'�� ×�æs���[2].

Ä»l�Óüt�Ér 1970��@/ ÊêìøÍÂÒ'� /BNÓ�o Ä»l� �¦ì�r��\� &h�]X�ô�Ç �iç�¦ :�x

K� ���l� ������� ½o�\� ��¾ú�>� �²ú�|c ú e������H ��sכ ·ú��9&����[3]. �&³

F� Ä»l�Óüt�Ér ����� 8£¤���\�"f, ]X�����(polystyrene 1px)�ÐÂÒ'� ìøÍ��, ����

1

Page 10: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

�(�iç�)a polypyrrol 1px) ���H ÂÒì�r\� æ¼s��¦ e����. þj��H\���H ìøÍ�� $í|9�

�¦ (��H π- Ä»l� �¦ì�r��\�¦ s�6 xô�Ç LED, I��ª� ���t�, F�gG'p"f, Ä»l�~ÃÌ}�� àÔ�½�t�

Û¼'�(OFET), �o�<Æ G'p"fü< °ú s� ���ª�ô�Ç 6£x6 x ���½[þts� �Öµ1Ïy� ���'��÷&�¦ e��

��[4, 5, 6, 7, 8, 9, 10].

Ä»l� àÔ�½�t�Û¼'� (OFET)\� �'aô�Ç ���½��H 1980��@/ {9��:r\�"f Tsumura

1pxs� polythiophene�¦ s�6 x �#� ëß���H OFET[11]ü< p�²DG\�"f Friend ÕªÒ�s�

polyacetylene�¦ s�6 x �#� ëß���H OFET[8] s�Êê�Ð ��� [j>�&h�ܼ�Ð ���½�� r����

÷&%3���. Ä»l� ìøÍ����H l��>r_� éß� ���&ñ z�o��BH ìøÍ��\� q�K� ��� �(�����, &ñ

/BN)_� s�1lx��� 10−3 C� &ñ� ±ú�t�ëß� Ä»l� ~ÃÌ}�� àÔ�½�t�Û¼'�\�¦ ]j���r� spin

coating, 6 xÓ�o casting, printing, stamping�¦ s�6 x ���� @/���&h��o�� 6 xs� ��¦,

�©��:r &ñ�_� $��:r\�"f ]j��� �#� Ä»���ô�Ç l�óøÍ0A\� &h�6 xs� ��0px � 9 q��§&h�

éß�í�Hô�Ç/BN&ñܼ�Ð]j�q�6 x ¢ô�Ç$�§4� ���. ¢ô�ÇØ�æ���\�_�K�L:t�t�·ú§�¦ ½

ÂÒo����� ]X��¦ ú e������H �©�&h�s� e����. ¢ô�Ç Ä»���ô�Ç àÔ�½�t�Û¼'�(Soft FET)

\�¦ ]j��� �l� 0AK�"f��H ����FGF�«Ñ\�¦ �Ð:�x_� àÔ�½�t�Û¼'�ü< °ú s� �FKs��� ·ú�ÀÒ

p�³ouõ� ²ú�o� ÈÒ"î ����"f� ����FGõ� �Ö$í8£x_� contact_� ë�H]j_� K����õ� �è��

\�¦ ]X�%3��¦ �âĺ l�>�&h�ܼ�Ð îß�&ñ½+É Ãº e���2�¤ Ä»l�Óüt�¦ s�6 x ���H ��� Ä»l�

àÔ�½�t�Û¼'�\� @/K� ���½�� �Öµ1Ï ���[12, 13]. ��� Ä»l� àÔ�½�t�Û¼'���H p�A� íß�

\O��¦ 0AK� F�g#3�0Aô�Ç ì�r��\�"f Áºl�Óüt �è��\�¦ �Т-a @/� ����� 1lq��&h���� :£¤

úô�Ç 6£x6 xì�r��\�¦ �½ÓØ�¦ � 9 �©�\O�&h� 6£x6 x��u���H 9þt�¦����sכ \V�©�s� ÷&#Q���

��[14, 15, 16, 17].

�:r�7Hë�H\�"f��H poly (3,4-ethylenedioxythiophene) (PEDOT) and polypyr-

role (PPy)�¦ ����FGõ� �Ö$í8£xܼ�Ð s�6 x ��¦, polyvinyle cinnamateü< epoxy

(FAE2500)\�¦ ]X����8£xܼ�Ð ��6 x �#� {9��+þA_� Ä»��� ��¦ (ìøÍ)ÈÒ"îô�Ç Ä»l� ~ÃÌ

2

Page 11: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

}�� àÔ�½�t�Û¼'�\�¦ ]j���(ÕªaË> 1.1 �ÃÐ�) �%i���. ]j����)a ��� Ä»l� àÔ�½�t�Û¼'�_�

�è�����1lx"é¶o�\�¦½©"î ��¦�è��_� òÖ�¦�¦7£x���r�&�"f�[j@/n�Û¼e�¦YUs� ½

1lx�è���Ð �Ö6 x½+É Ãº e���2�¤ ���½ �%i���.

3

Page 12: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

Figure 1.1 {9��+þA_� Ä»��� ��¦ (ìøÍ)ÈÒ"îô�Ç Ä»l� ~ÃÌ}�� àÔ�½�t�Û¼'�

4

Page 13: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

Chapter 2

l� Òeµ

2.1 ¦�>�¿Å]� �§&P���

�¦ì�r��(polymer)����H ��Érכ ì�r��|¾Ós� �H ì�r��\�¦ ú� ���HX< �Ð:�x_� ì�r��

ü<"îSX�ô�Ç�â>���e����H��Ér��m���Óüt$íכs�/åL���y���� ���Hì�r��|¾Ó,��� 10,000

s��©�_� �¦�כ �¦ì�r���Ð ÂÒ�Ér��. �¦ì�r��\�¦ +þA$í ���H òøÍ�è��H 4>h_� ���������

e����HX<, ÕªaË> 2.1_� benzene%�!3� 3>h_� ������� ���]X�ô�Ç ¿º >h_� òøÍ�èü< ú

�è "é¶�� ��s�\� sp2 �D¥$íC��\�¦ +þA$í �#� σ ���½+Ëܼ�Ð s�ÀÒ#Q��� ���y��+þA î

����¦ s�ÀÒ�¦, �� Qt� ô�Ç >h_� ������� Õª î���\� úf��ô�Ç pzC��\� (�4R e��

#Q π��������¦ ô�Ç��. s�ü< °ú �Ér �$�H$�s� ���� 0Au�\� Áºô�Çy� ������÷&��� poly(p-

phenylene)(PPP)����H �¦ì�r���� ÷&�¦ ì�r�� C����H ×�æo?÷&#Q \��-t�{�\�¦ +þA

$í �>� �)a��. ���½+ËU�s�_� �ü< �¦ì�r��_� \��-t� {�çß����_� ß¼l���H �©��'a�'a>�

\�¦°ú��¦e��ܼټ�Ð π�����_�0lx�\�¦ �]X� �#��¦ì�r��ìøÍ��_�\��-t� ½�\�¦

5

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�]X�½+Éúe����.����"f�¦ì�r��ìøÍ��\�"fÅÒ��_þt ¢��H�����_þt_��o�<Æ&h� �

��� 1px�¦ :�x �#� π�����_� 0lx�\�¦ �]X� ���� �¦ì�r�� ìøÍ��_� \��-t�{� çß����

�¦ ����or�~� ú e���¦, ìøÍ��&h���� $í|9��¦ 6£x6 x ���� �¦ì�r�� FET]j���s� ��0px

���.

6

Page 15: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

OO

S n

σ � ���

π ��� �

Benzene poly(p-phenylene)

polypyrrole poly (3,4-ethylenedioxythiophene)

n

NH

n

Figure 2.1 @/³ð&h���� ���l�����$í �¦ì�r��[þt_� �o�<ƽ�

7

Page 16: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

2.2 ¦�> � ¦�>I±Ó «Å�(�×

2.2.1 Variable range hopping (VRH) model

���&ñ ��ü<��H ²ú�o� q����&ñ|9� �¦ì�r�� Óüt|9�s��� Ô�¦í�HÓüts� ú§�Ér ìøÍ��

_� �âĺ ��� � ���²ú� �+þA�Ér ß¼>� ¿º ��t��Ð ��Ðüt ú e����. �����H \��-t� {�

�+þAs��¦ ¢ �����H hopping �+þAs���. \��-t� {� �+þA�Ér ÅÒ�Ð l��_� ì�r��

î�r1lx\�"f �:r� T\�"f \P�\��-t� (kBT )\�¦ °ú���H l�� ì�r��_� Boltzmann SX�Ò�¦

ì�r�í%�!3�SX�Ò�¦&h���������_��ª�õ�8A�9�¦ ���H\��-t�çß���� (ε)ëß�s�����\��'a

#�ô�Ç����H �.���sכ ���l� �����_� �:r� _��>r$í�Ér ��6£§õ� °ú s� l�Õüt�)a��.

σ(T ) = σmin exp(− ε

kBT

)(2.1)

#�l�"f σmin��H þj�è f��ÀÓ ���l� �����s���. ¿º ���P:�Ð hopping �+þAs�

e����HX<, hopping\���H #��Q 7áxÀÓ_� �+þAs� e��ܼ�� ìøÍ��/åL ���l������\�¦ ��

��� ����$í �¦ì�r��\� ��ÅÒ ú� ú���H variable range hopping (VRH) �+þAs� e��

��[18]. s� �+þA�Ér�������\��-t�{���s�\�¦8A#QSX�íß� (diffusion)÷&��H����Ðכ

��H q����&ñ|9� M:ë�H\� Òqtl���H Fermi \��-t� ï�r0A ��H%�_� ²DG�è�o�)a �©�I� ��s�

\�¦ ������� hopping ���H �.���sכ s� �âĺ ���l������\� l�#� ���H ¹����Érכ ��

6£§_� 3��t��Ð ��Ðüt ú e����.

1) \��-t� (W )� �FG4�¤: �:r� T\�"f W\�¦ �FG4�¤ ���H �����_� ú�� #Q�"� �©�I�\�¦

&h�Ä»½+É SX�Ò�¦ - exp(−W/kBT )

2) phonon ÅÒ��ú: νph

3) ����� ��1lx �<Êú_� overlap &ñ�: exp(−2αR)

8

Page 17: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

���l��©� E\�¦ ��½+É M: ���l��©� ~½Ó�¾Ó (+)õ� ���l��©� ìøÍ@/ ~½Ó�¾Ó (-)ܼ�Ð �����_�

hopping SX�Ò�¦�Ér ��6£§õ� °ú s� ����è­q ú e����.

P = νph exp(−2αR− W ± eRE

kBT

)(2.2)

�����_� hopping�Ér phonon_� �¹¡§�¦ ~ÃÎl� M:ë�H\� νph�� 9þtú2�¤, ��1lx �<Êú_�

overlaps� ú§�¦Ãº2�¤ �8 ú� s�ÀÒ#Q�����. #�l�\�"f R�Ér #Q�"� �©�I���t�_� ��o�

s� 9, α��H ²DG�è�o�)a U�s� L_� %i�ús���. Fermi \��-t� ��H%�_� kBT \��-t�

½çß�\� e����H �����_� ú��H 2N(EF ) kBT�� �)a��. ���ÀÓ x9�� (J)��H �����_� ú

(n), ��� �|¾Ó (q), �����_� îç�H 5Åq� (v)_� Y�Ls�Ù¼�Ð

J = 2N(EF )kBT × e×Rνph exp(−2αR− W

kBT

)

×[exp

(eRE

kBT

)− exp

(−eRE

kBT

)]

= 4eRkBTN(EF )νph exp(−2αR− W

kBT

)sinh

(eRE

kBT

)(2.3)

�� �)a��. ���ô�Ç ���l��©�{9� M: (eRE ¿ kBT ) ��6£§õ� °ú ��.

sinh(

eRE

kBT

)' eRE

kBT(2.4)

����"f f��ÀÓ ���l� �������H ��A� d��õ� °ú s� %3��¦ ú e����.

σ =J

E= 4e2R2N(EF )νph exp

(−2αR− W

kBT

)(2.5)

= σ0 exp(−2αR− W

kBT

)(2.6)

9

Page 18: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

#�l�"f σ0 = 4e2R2N(EF )νphs���. \��-t� çß���� dE\� �©�I�ú��H

4

3πR3N(EF )dE (2.7)

�� �)a��. 3D-VRH�+þA�¦ l�ï�rܼ�Ð >�íß� ����, îç�H&h� hopping \��-t�(W )��H

d�� 2.7_� %i�ú�� �)a��.

W =1

43πR3N(EF )

(2.8)

0A_� f��ÀÓ���l������ d�� 2.6��H Rõ� α_� �<Êú�� �)a��. s� Ñüt_� �'a>�\�¦ ·ú�l�

0AK� ���l������\�¦ R\� @/K� p�ì�r �#� ���l�������� þj@/�� ÷&��H Rõ� α°úכ

�¦ ½ �#� �Ð���,

R =31/4

(2παN(EF )kBT )1/4(2.9)

α =3

2πR4N(EF )kBT(2.10)

�Ð >�íß��)a��[18]. s� úd���Ér �:r�\� ���� hopping ��o��� ��� ���H �¦�כ ú� �

��HX<, s���Érכ ������� �:r�\� ���� variable range hopping�¦ �#� f��ÀÓ���l����

��\� l�#�\�¦ ô�Ç����H �.���sכ ����"f Rõ� α°ú�כ¦ d�� 2.6\� V,�#Q >�íß� ����,

f��ÀÓ���l��������H

σ = σ0 exp

(T0

T

) 14

(2.11)

�¦ %3���H��. #�l�"f T0 = 16α3/kBN(EF )s��¦, 3�"é¶&h� ���l� �����\�¦ ����?/

%3���. >�íß��)a ���l� �����_� úd���¦ s�6 x �#� {9�ìøÍ&h���� d�"é¶_� �<Êú�Ð ��

10

Page 19: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

��?/��� ��6£§õ� °ú ��.

σ = σ0 exp

(T0

T

) 1d+1

(2.12)

2.2.2 ÄZ� â«Å�(�×[Bottle neck effect]

#î3lqs�����H éß�#Q��H #î 5Åq\� {��|�� Ó�o��� �-Áº À1Ïo� ���t� ·ú§�2�¤ �

l�0AK�a%v>�ëß�[þt#QZ�~�ÉrÅÒÑüæs�ÂÒì�r�¦��o������.#î3lq�&³�©�s�êøÍs�%�!3�V,�

�Ér ��sכ °ú���l� a%v��t�Ù¼�Ð ���K� {9�#Q����H �&³�©��¦ ú�ô�Ç��.

FET�è��_� »¡¤&h�÷&��H ~½Ód��\�"f��H gate ���·ú�(Vg)�� �����|c M:��H G�V,�s�

a%v��t���H�&³�©�s�������t�·ú§��H��.ìøÍ���ÕªaË> 2.2\�¦�Ð��� p-type_�/BN�9�+þA~½Ó

d��\�"f��H Vgs� 0{9� M:\�� source-drain ���ÀÓ�� âìØÔ 9 Vgs� %i� ��s�#QÛ¼�Ð

7£x�� ����"f y���è ���H :£¤fçs� e����. Vg�� �ª�ܼ�Ð �����÷&��� G�V,�s� a%v��t���H

�&³�©�s� ����èß���. G�V,�s� a%v��t���� ���/BN[þts� t���°ú� ú \O�>� �)a��. 7£¤, Vg\�

_�ô�ÇG�V,�[þts�a%v��t���H#î3lq�&³�©�s�����èß���.ìøÍ��� Vg�� 0s�����6£§Ü¼�Ð���

��÷&��� #î3lq�&³�©��Ér ������t� ·ú§��H��.

11

Page 20: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

��������������������

S DIdsL

� �� �� �� �

� � � � � � � �

�������������������� � � � �

S DIds

L

��������������������

S DIdsL

� � � �

��������������������

��������������������

��������������������

Figure 2.2 p-type_�/BN�9�+þA{9��âĺ : (a) Vg = 0 V (b) Vg > 0 V (#î3lq�&³�©�)

(c) Vg < 0 V

12

Page 21: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

2.2.3 Stretched-Exponential Relaxation

Stretched-exponential �<Êú��H Kohlrausch[19] ZO�gË:ܼ�Ð ú� ·ú��94R M®o��.

Stretched-exponential s�¢-a_� �м#�&h���� :£¤$í�Ér Óüto�&h�ܼ�Ð ���:r ��sכ ��m�

��. éß�t� s��:r��[þts� Stretched-exponential �+þAs� ú��¦ �¦����sכ Òqty�� ��¦

�ݶô�Ç �.���sכ Kohlrausch ZO�gË:�Ér Ä»o��� �¦ì�r��%�!3� ���+þA&h�ܼ�Ð C�\P�s� 4�¤

ú�ô�Ç 6£x|9�Óüt|9�_� s�¢-a(¢-a�o)÷&��H �&³�©�\� ú� ú���H��. ¢ô�Ç spin, q����&ñ|9� z�

o��BH1px ���Ér #��Q >�\�"f� ú� ú���H��[20, 21, 22].

n(t) = n(0) exp[−(t/τ)β] (2.13)

β��H 0\�"f 1��s�_� °úכs��¦, τ��H diffusionü< drift\� _�ô�Ç ion_� 5Åq�s���[22].

Stretched-exponential �<Êú\�¦ s�6 x �#� �:r� ����o\� ���Ér r�çß�\� �<Êú

\� ���� ���ÀÓ\�¦ ����?/��� d�� 2.14�Ð l�Õüt�)a��.

I(t)− I(∞)

I(0)− I(∞)= exp[−(

t

τ)β], (2.14)

\�"f I(0) = 0ܼ�Ð ¿º�¦ &ño� ���� d�� 2.15�Ð &ño� �)a��.

I(t) = I(∞)− I(∞)exp[−(t

τ)β] (2.15)

s� �+þA�Ér dangling bond�� ��-(ìøÍ��\��D¥{9�÷&#Q��Ä»�����\�¦7£x��r�v���H

Ô�¦í�HÓüt)_� ú�� ����o ���H ��sכ "é¶���s���.

13

Page 22: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

2.3 OFET ˦�>¥� �+ AC ˦�> §�Å]�

Ä»����(dielectric)\� ü@ÂÒ\�"f AC ���l��©��¦ �� ���� AC ���·ú�\� _�K�

Ä»����_� ��� �[þts� F�C�\P�ô�Ç��. s��ÐÂÒ'� 4�¤�è Ä»����©�ú ½½+É Ãº e����. ���

/BN\�"f ���&h� A(m2)��� ����FG çß���� d(m)ëß��pu b��#Q4R e����H Ä»����\� AC ���·ú�

(V = V0eiwt)�¦ ����� ���� ���l�6 x|¾Ós� C0 = ε0A

d��� »¡¤���l�\� $��©��)a ��� ���H

Q = C0Vs���. ε0��H ���/BN\�"f Ä»���Ö�¦s���. Ø�æ���l���H ��� �\�¦ $��©� �l� 0AK�

"f��H Ø�æ������ÀÓ\�¦ =åJ#Q[þt�����. s�M:_� Ø�æ������ÀÓ��H

Ic =dQ

dt= iwC0V (2.16)

s���. Ä»������ ���/BNs� ����� ���Ér Óüt|9��Ð G�0>��� �âĺ ���l�6 x|¾Ó�Ér

C = C0ε′

ε0

= C0κ′ (2.17)

�Ð 7£x��ô�Ç��. ε′�Ér Óüt|9�s� e���¦ �âĺ_� Ä»���Ö�¦s� 9 κ′�Ér ε′õ� ε0_� q�Ö�¦�Ð Óüt

|9�_� Ä»����©�ú\�¦ �����·p��. Ø�æ������ÀÓ_� $íì�r��� Icü< 1lxr�\� �<Hz����ÀÓ $íì�r

��� Ils� 1lxr�\� âìØÔ>� �)a��. s�M:_� �<Hz����ÀÓ��H Il = GVs���. G��H »¡¤���l�

_� �� ü����Û¼s���. »¡¤���l�\� âìØÔ��H 8úx ���ÀÓ��H Ic + Il s�Ù¼�Ð

I = Ic + Il = (iwC + G)V (2.18)

14

Page 23: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

s���. 4�¤�è Ä»���Ö�¦ ε∗ = ε′ − iε′′�¦ �{9� �#� 8úx ���ÀÓ\� @/{9� ����

I = (iwε′ + wε′′)C0

ε0

= iwκ∗C0V (2.19)

�Р%3�>� �)a��. s�M:

κ∗ =ε∗

ε′= κ′ − iκ′′ (2.20)

ܼ�Ð 4�¤�è Ä»����©�ús���.

15

Page 24: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

2.4 çÃwñdm�â«'a

àÔ�½�t�Û¼'���HìøÍ��_� source\�"f drain\�âìØÔ��H���ÀÓ\�¦ gate\���ô�Ç

���·ú�\� _�ô�Ç ���l��©�ܼ�Ð ]j#Q�)a��. source��H ]X�t�÷&#Q e��#Q ������� &ñ/BN_�

/BN/åL%� %i�½+É�¦ ��¦ gate��H ]X����8£x\� ���·ú��¦ ����� �#� ]X����� ��s�\� ��� �

_��ª��¦����or�v���H%i�½+É�¦ ��¦e����.�è��_�1lx���"é¶o�\�¦ p+þAìøÍ��(ÅÒ���

��� &ñ/BN��� ìøÍ��)\�¦ ×�æd��ܼ�Ð ¶ú�(R�Ð��.

1) sourceü< drain��s�\� ���·ú��¦ ����� ��¦ gate ���·ú��¦ ����� �t� ·ú§Ü¼

���ìøÍ�� ?/_���� �[þt�ÉrìøÍ�� ?/\��¦ÀÒ(�4Re��#Q"f source drain���·ú�\�

q�YV �#� ���ÀÓ��H âìØÔ>� �)a��.

2) gate\��ª�_����·ú��¦����� ����]X����8£x\�e����H&ñ/BN[þts����l��©�\�_� �

#��Ö$í8£xܼ�Ð �¦����>��)a��.]X�����\�������� ���\O���H/BN�9�8£x (depletion

layer)s�Òqtl�>��)a��.��� �î�rìøÍ����×�¦#Q[þt#Q gate���·ú�s�&�t����&�|9�ú2�¤

�8 ±ú��Ér ���ÀÓ�� âìØÔ>� �)a��.

3) gate\� 6£§_� ���·ú��¦ ����� ���� �Ö$í8£xõ� ]X����8£x ��s�\� �ª�_� ��� ���

Ä»�÷&#Q »¡¤&h�8£x (accumulation layer)s� Òqt|����. sourceü< drain\� ���·ú��¦ 6£§

ܼ�Ð �����½+Éú2�¤ sourceü< drain ��s�_� ���ÀÓ��H 7£x��½+É �.���sכ

àÔ�½�t�Û¼'���H ��s�e�¦�� ]X�½+Ë (bipolar junction) àÔ�½�t�Û¼'�, �FK5Åq-íß��o

}��-ìøÍ�� ���>�òõ� àÔ�½�t�Û¼'� (MOSFET)�Ð ��Ðütú e����. ��s�e�¦�� ]X�½+Ë

àÔ�½�t�Û¼'���H�����ü<&ñ/BN(hole)_�¿º��t�H�o�#Q�����ÀÓ\��'a �#�Õª�©�~½Ó

_� s�1lx\� _��>rK� 1lx��� ���H àÔ�½�t�Û¼'�\�¦ ú�ô�Ç��. >hZ>�&h�ܼ�Ð [j >h_� �iç

�)a %ò%i�õ� ¿º>h_� p-n]X�½+Ë�¦ ��t��¦ e����. MOSFET��H ��¥y� MOS���¦ ÂÒØÔ

9 ìøÍ�� l�%3��è���Ð |9�&h��\�¦ Z�}{9�ú e����H :£¤fçs� e��#Q @/½©� |9�&h��r�Ð

16

Page 25: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

\� ú§s� æ¼�����. MOS��H Metal Oxide Semiconductor\�¦ ���g�Aô�Ç��. MOSFET

� %i�r� ����G�V,�_� +þAd��\� ���� n-G�V,�õ� p-G�V,��Ð ½ì�r÷& 9 y��y�� ½��©�

7£x��+þA(enhancement type)õ� /BN�9�+þA(depletion type) ܼ�Ð ½ì�rô�Ç��. 7£x��+þA

�Ér gate���·ú�s� 0{9�M:\���H drain���ÀÓ��âìØÔt�·ú§Ü¼ 9 gate���·ú�_�7£x��\���

��Ø�¦§4����ÀÓ��7£x��ô�Ç��./BN�9�+þA�Ér gate���·ú�s� 0{9�M:\�� drain���ÀÓ��âìØÔ

9 gate ���·ú�s� %i� ��s�#QÛ¼�Ð 7£x�� ����"f y���è ���H :£¤fçs� e����.

2.4.1 MOSFET

(1) MIS ]X�½+Ë

ÕªaË> 2.3�Ér Metal-Insulator-Semiconductor(MIS)_� ½�s���. p-+þA ìøÍ�

�\� ���·ú�s� �����÷&t� ·ú§�Ér �©�I�(V = 0 V)_� s��©�&h���� \��-t�{� ½�s���.

]X����8£xõ� ìøÍ�� ��s�_� ���çß�_� {�½ÂÒ�Qf��s� �Ð#�t���HX< s���H �FK5Åqõ� ìøÍ

��ü<_� {9��<Êú(work function)_� �s�M:ë�Hs���. s� �s���H ü@ÂÒ\�"f �FK5Åq

\� {9�&ñô�Ç ���·ú��¦ �����K��� îòøÍK�t���HX< s�M:_� ���·ú��¦ flat-band���·ú�s���

�¦ � 9, ��6£§õ� °ú s� ÅÒ#Q�����.

Vfb = χs + Ec − Ef − φm (2.21)

s�M: �FK5Åq\� �ª� ���·ú��¦ ����� �>� ÷&���, \��-t�{���H ��A��Ð 6f#Qt� 9, 6£§ ���

·ú��¦ ����� �>� ÷&��� \��-t�{���H 0A�Ð 6f#Q����� (ÕªaË> 2.4�ÃÐ�). 6£§ ���·ú��¦

�FK5Åq\� ����� ����, �ØÔp�ï�r0A��H �Ð�� �������{� Aá¤Ü¼�Ð s�1lx �>� �)a�� (ÕªaË>

2.4(a) �ÃÐ�). ���õ�&h�ܼ�Ð ��ú ��� � î�rìøÍ����� &ñ/BN(hole)�Ér ]X����8£xõ� ìøÍ��

17

Page 26: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

>����\� |9�×�æ �>� ÷&#Q, ìøÍ��?/\� e����H &ñ/BN_� 0lx��Ð�� ìøÍ�� >����\�"f

_� &ñ/BN_� 0lx��� Z�}�� t���HX< s�\�¦ »¡¤&h�(accumulation)�©�I����¦ ô�Ç��. ìøÍ@/

�Ð �ª� ���·ú��¦ �FK5Åq\� ����� �>� ÷&��� flat band �©�I�\�¦ ��5g \��-t�{���H ��A�

�Ð 6f#Qt�>� ÷&��HX<, ìøÍ��ü< ]X����8£x_� >���� ��H%�\�"f_� �ØÔp�ï�r0A��H ��

�����{�_� ���©���o�ü< �8¹¡¤ YO�#Qt�>� ÷& 9, ���õ�&h�ܼ�Ð &ñ/BN_� 0lx���H ±ú���

t���HX< s�\�¦ /BN�9�(depletion)�©�I����¦ ô�Ç��.

�ª�_� ���·ú��¦ >�5Åq 7£x��r�v���� ìøÍ��ü< ]X����8£x_� >���� ��H%�\�"f_� �

ØÔp�ï�r0A�Ér ����{�_� ���©���o�\� ]X���H �>� ÷&��HX<, s�XO�>� ÷&��� ]X����8£x>�

���_� ìøÍ����H n-+þA ìøÍ��_� :£¤$í�¦ �Ðs�>� �)a��. 7£¤ p-+þAìøÍ��_� >����ëß�

n-+þAìøÍ���Ð��7 >�÷&��H����X<s�\�¦ìøÍ���(inversion)s���ô�Ç��.0A_�?/6 xכ

�¦ &ñ|¾Ó&h�ܼ�Ð >�íß� �l� 0AK� Poisson ~½Ó&ñd��õ� Boltzmann ì�r�í�<Êú[23]\�¦

s�6 x �#� MIS ½�\�"f_� ��� �x9��\�¦ ½ �>� ÷&���

ρ = q[N+d −N−

a + p0exp(−qV

kT)− n0exp(

qV

kT)] (2.22)

�Ð jþt ú e��ܼ 9, #�l�"f N+d ü< N−

a ��H y��y�� s��:r�o�)a ��-(donor)ü< %3�!ss

'�(acceptor)_� 0lx�\�¦ �����·p��. Õªo��¦ p0 ü< n0 ��H î+þA �©�I�\�"f_� �����

ü< &ñ/BN_� 0lx�s���. s� d��\�"f ìøÍ��?/\�"f_� ���l�&h� $í|9��Ér ×�æ$ís� ÷&#Q

�� �Ù¼�Ð, ��6£§õ� °ú s� H�d�¦ ·ú� ú e����.

N+d −N−

a + p0 − n0 = 0 (2.23)

0A_� d�� 2.22ü< d�� 2.23�¦ possion ~½Ó&ñd��\� @/{9� ����

d2V

dx2=

q

εs

n0[exp(qV

kT)− 1]− p0[exp(

−qV

kT)− 1] (2.24)

18

Page 27: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

�¦ %3���H��. s� p�ì�r ~½Ó&ñd���¦ Û�¦l� 0AK�, ���l��©� E\�¦ �{9� ����

E = −dV

dx(2.25)

\�"fd2V

dx2= −dE

dx= −dE

dV

dV

dx= E

dE

dV(2.26)

�Ð jþt ú e����. #�l�"f d�� 2.26_� ��ÉrAᤠ�½Ó�¦ d�� 2.24\� @/{9� �#� %3�#Q��� p�

ì�r ~½Ó&ñd���¦ V\� @/ �#� &h�ì�r ����

E =

√2kTp0

εs

f(V ) (2.27)

�Ð ³ð�&³÷& 9, #�l�"f f(V) ��H

f(V ) = ±{[exp(

−qV

kT) +

qV

kT− 1

]+

n0

p0

[exp(

qV

kT)− qV

kT− 1

]}1/2 (2.28)

s���. d�� 2.28_� ĺ8£¤�½Ó_� ± l� ñ��H �����÷&��H ���·ú�_� ÂÒ ñ\�¦ _�p�ô�Ç��.

ìøÍ�� ?/ÂÒ_�8úx��� �|¾Ó Qs��H]X����8£xõ�ìøÍ��_�>����_����l��©� Esü<

�'aº��÷&#Q e����HX<, ��ĺۼZO�gË:\� _� �#�

|Qs| = εs|Es| (2.29)

>������� �_� ]X�@/°úכ_� ����o\�¦ ÕªaË> 2.5\�"f �Ð#�ÅÒ�¦ e����. MIS ]X�½+Ë\�"f_�

»¡¤&h�(accumulation), /BN�9�(depletion), ìøÍ���(inversion) �©�I�\�¦ �Ð#�ÅÒ�¦ e����.

Õª�Q�� ĺo��� ìøÍ�� ³ð���_� ���·ú��¦ 8£¤&ñ �l���H B�ĺ #Q�9ĺټ�Ð �FK5Åq\�

����� ÷&��H ���·ú� VGü< ìøÍ�� ³ð���_� ���·ú� Vsü<_� �'a>�\�¦ ·ú����� ô�Ç��. ]X����

8£xõ� ìøÍ��_� >����\�"f_� ���l��©�s� ���5Åq$í�¦ ��������¦ ��&ñ ����

εsEs = εiEi (2.30)

19

Page 28: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

s� 9 εi ��H ]X����8£x_� Ä»���Ö�¦(permittivity), Ei ��H ]X����8£x_� ���l��©��¦ �����·p

��.����"f]X����8£x_�¿ºa�\�¦ di�� � 9]X����8£x?/ÂÒ\�"f_����·ú�y©� ���H Eidi�Ð

ÅÒ#Qt��¦, �FK5Åq\� �����÷&��H ���·ú��Ér ��6£§õ� °ú s� jþtú e����.

VG = Vfb + Vs +εsEs

Ci

(2.31)

#�l�"f

Ci =εi

di

(2.32)

�Ð éß�0A ���&h�{©� ]X����8£x_� ���l�6 x|¾Ó(capacitance)�¦ _�p�ô�Ç��. �'ad���¦ ��t���H

¢ ���_� ×�æ¹כô�Ç ���ú�Ð ë�H)3����·ú�(threshold voltage) VTs� e����HX< s���H ìøÍ

���s� r����÷&��H �©�I�\� K�{©� ���H ���·ú��¦ _�p�ô�Ç��. ÕªaË> 2.5\�"f �Ð1pws�

Vs = eφb (2.33)

�¦ëß�7ᤠ���Hr�&h��¦ë�H)3����·ú� VTs��� ��¦d�� 2.33�¦d�� 2.31\�@/{9� �#���

6£§�¦ ½½+É Ãº e����.

VT = Vfb + 2φb +εsEs

Ci

(2.34)

��r� ���

VT = Vfb + 2φb +2√

qNaφbεs

Ci

(2.35)

#�l�"f 'Í �½Ó�Ér �FK5Åqõ� ìøÍ�� çß�_� {9��<Êú�s�\� _�K� Òqtl��¦, ¿º ���P: �½Ó

�Ér ë�H)3����·ú�_� s��©�&h���� &ñ_�s� 9, [j ���P: �½Ó�Ér ]X����8£x�¦ :�x ����"f Òqtl���H

���·ú� y©� �(voltage drop)\�¦ ����?/�¦ e����.

(2) MISFET l��:r1lx��� "é¶o�

20

Page 29: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

ÕªaË>2.6\�"f {9�ìøÍ&h���� MISFET�¦ �Ð#�ÅÒ�¦ e����. p-+þA ìøÍ�� l�óøÍ 0A

\� n-+þA%ò%i��¦ sourceü< drainܼ�Ð��6 x �%i��¦ gate����FGõ�ìøÍ�� l�óøÍ�Ér]X�

���8£xܼ�Ðì�ro�÷&#Qe����. MISFET_����©��H�©�&h��Ér p-+þAl�óøÍõ� n-+þA����FGs�

/BN�9�8£x(depletion)%ò%i�ܼ�Ð "f�Ð ì�ro�÷&#Q e������H �,¦��sכ G�V,�(channel)�

p-+þA l�óøÍõ���H /BN�9�8£x(depletion)ܼ�Ð "f�Ð ì�ro�÷&#Q e������H �.���sכ ����"f

1lx{9� l�óøÍ0A\� ]j���÷&#Qt���H ���Ér �è��[þtõ�� �����Û¼XO�>� ì�ro�|c ú e����.

l� ��<Æ&h�������ú�ÐG�V,�U�s�(channel length) L,G�V,�;�¤(channel width)

W, ]X����8£x_� ¿ºa���� d�� e��ܼ 9, {9�ìøÍ&h�ܼ�Ð source��H ]X�t�÷&#Q e����. s� �©�

I�\�"f gate\� �ª�_� ���·ú� Vg\�¦ ����� �>� ÷&��� ]X����8£xõ� ìøÍ�� >����_� ��� �

ì�r�í��H flat-band,/BN�9��©�I�\�¦t���ìøÍ���\�s�ØÔ>��)a��.7£¤>����\���H6£§_����

�[þts�Ä»�÷&�¦ n-+þA sourceü< drain��s�\�G�V,��¦:�x �#����ÀÓ Id��âìØÔ>�

�)a��. 7£¤ Vd�� ����Ér �©�I�\�"f��H drain���ÀÓ Id��H Vd \� q�YV �>� �)a��. ëß����

Vd�� &h�&h� 7£x�� �>� �)a����� drain %ò%i� ��H%�_� G�V,�¿ºa�(channel depth)��H

&h�&h� y���è �>� ÷&�¦, G�V,�¿ºa��� ð0ñs�÷&��H ���·ú��¦ ��¥y� pinch-off ¢��H �í

�o(saturation) ���·ú�(Vd,sat) s����¦ ô�Ç��. s� s��©�_� ���·ú�\�"f��H pinch-off t�

&h��Ér &h�&h� sourceAá¤Ü¼�Ð s�1lx �>� ÷&�¦, ��� �î�rìøÍ��[þt�Ér s� t�&h�\�"f drain

��H%�_� /BN�9� %ò%i�ܼ�Ð ÅÒ{9��)a��. ����"f pinch-off t�&h�\� �²ú� ���H ��� �î�r

ìøÍ��_� Õüw����H {9�&ñ �>� ÷&�¦, drain���ÀÓ Id��H {9�&ñ �>� �)a��.

MISFET_� ���ÀÓ-���·ú�õ�_� �'a>�\�¦ >�íß� �l� 0A �#� #�l�"f��H gradual

channel approximation�¦ ��6 x �l��Ð ô�Ç��. s� ~½ÓZO��¦ ��6 x �l� 0A �#� G�V,�

~½Ó�¾Ó_� ���l��©�_� ����o �Ð����H G�V,� úf�� ~½Ó�¾Ó_� ���l��©�_� ����o�� ß¼���¦ ��

&ñô�Ç��. 7£¤ ∂Ey

∂y<< ∂Ex

∂xs� 9, s� ��&ñ�¦ ëß�7ᤠ��9��� G�V,�U�s� Ls� ]X����8£x_�

¿ºa��Ð�� ß¼��� �)a��. (L >> d) s��Qô�Ç ��&ñ\�"f source\�"f drain ~½Ó�¾Óܼ�Ð

21

Page 30: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

ÅÒ#Q�����o� y_�>�������·ú� Vs�¦ Vs(y)�ÐZ�~�¦,]X����8£xõ�ìøÍ�� >����\�Ä»�

�)a éß�0A ���&h�{©�_� ��� �\�¦ Qs ���¦ ����, y\�"f_� Qs��H

Qs(y) = −Ci[Vg − Vfb − Vs(y)] (2.36)

#�l�"f Ci ��H ]X����8£x_� éß�0A ���&h�{©� ���l�6 x|¾Ó Vfb �Ér flat-band ���·ú�s���. Õª

o��¦ G�V,��¦ ëß�×¼��H ìøÍ���8£x_� ��� � Qn ��H

Qn(y) = Qs(y)−Qdep(y) (2.37)

ܼ�Ð jþt ú e����. y©�ìøÍ���(strong inversion) %ò%i�\�"f��H

Vs(y) = 2φb + V (y) (2.38)

{9��âĺ\�¦ ú� � 9,#�l�"f V(y)��H y\�"f_�%i�~½Ó�¾Ó���·ú��¦_�p�ô�Ç��.d�� 2.37�¦

d�� 2.36ü< d�� 2.38�¦ V,�#Q ��r� &ño� ����

Qn(y) = −Ci[Vg − Vbf − V (y)− 2φb] +√

2εsqNa[V (y) + 2φb] (2.39)

�Ð ³ð�&³�)a��. Id\�¦ channel conductance g\�¦ s�6 x �#� >�íß� ����

g(y) =Z

L

∫ y

0σ(y′)dy′ =

L|Qn(y)| (2.40)

#�l�"f σ = nqµ��H channel conductivity, µ��H�����_�s�1lx��Ð ���HG�V,�%ò

%i�\�"f {9�&ñ ����¦ �:r��. ����"f G�V,�_� U�s¹כ��è dy _� $��½Ó dR�Ér

dR =dy

gL=

dy

zµ|Qn(y)| (2.41)

s���. Õªo��¦ s� U�s¹כ��è\�"f ���·ú�y©� ���H

dV = IddR =Iddy

zµ|Qn(y)| (2.42)

22

Page 31: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

����"f d�� 2.39\�¦ d�� 2.42\� @/{9� �#� &h�ì�r ����

Id =Z

LµCi (Vg − 2φb − Vd

2)− 2

3

√2εsqNa

Ci

[(Vd + 2φb)

3/2 − (2φb)3/2

](2.43)

�гð�&³�)a��.éß� flat band��HÁºr� �%i���.·ú¡\�"f[O�"îô�Ç��ü<°ú s�:£¤&ñ gate

���·ú�\�"f drain ���·ú��¦ 7£x�� r�v����, %�6£§\���H drain ���·ú�\� q�YV �#� Id��H

7£x�� ��¦(���+þA%ò%i�), &h�&h� drain ���·ú�õ���H �'a>�\O�s� drain ���ÀÓ�� {9�&ñô�Ç °úכ

ܼ�Ð]X���H �>��)a��(�í�o%ò%i�).����"f���+þA%ò%i�õ��í�o%ò%i�_� drain���ÀÓ\�¦

��¾º#Q Òqty�� ����, ĺ��� ���+þA%ò%i�_� ���ÀÓ��H, Vd << Vg\�¦ �¦�9 �#� d�� 2.43�¦

��r� ���

Id ≈ Z

LµCi(Vg − Vt)Vd (2.44)

�Ð jþt ú e��ܼ 9, �í�o%ò%i�_� ���ÀÓ��H

Id,sat ≈ mZ

LµCi(Vg − Vt)

2 (2.45)

�Ð ³ð�&³�)a��. #�l�"f m�Ér �iç �<Êús� 9, ���çß� �içô�Ç �âĺ��H 0.5&ñ�s���.

0A_� d�� 2.44õ� d�� 2.45\�¦ ��6 x �#� s�1lx�1px�¦ ½½+É Ãº e��ܼ 9, s�\� ���Ér

Vg − Id, Vd − Id :£¤$í /BG����¦ ÕªaË> 2.7õ� ÕªaË> 2.8\�"f �Ð#�ÅÒ�¦ e����.

2.4.2 TFT

TFT��H MISFETõ���H ��ØÔ>� l�óøÍõ� G�V,� ��s�\� /BN�9�8£xs� \O���. ����

"f ���ÀÓ-���·ú� :£¤$í�Ér q��§&h� çß�éß� �>� >�íß�|c ú e����HX< G�V,�\� î'��ô�Ç ~½Ó

23

Page 32: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

�¾Ó�¦ x�� ����, d�� 2.36\�¦ ��r� +�"f

Q(x) = −Ci[Vg − Vfb − Vs(x)] (2.46)

s� 9 Vd < Vg ���¦ ��&ñ �%i�l� M:ë�H\�, 0A_� d�� 2.46��H ���H G�V,� %ò%i�\� ���

5g ��� ��� »¡¤&h�(accumulation)�©�I�e���¦ �Ð#�ÅÒ�¦ e����. Id\�¦ >�íß� �l� 0AK�

dV = IddR =Iddx

z mu(|Q(x) + Q0|) (2.47)

�Ðjþtúe���¦, Q0 = −qn0ds �ÐìøÍ��_�ÂÒx���� �(bulk charge)\�¦����?/ 9,

n0 ��H ÂÒx���� �x9��\�¦ ds ��H ìøÍ��_� ¿ºa�\�¦ �����·p��. d�� 2.47�¦ &h�ì�r �#�

&ño� ����

Id =Z

LµCi[(Vg − Vt)Vd − V 2

d

2] (2.48)

�Ð drain ���ÀÓ ~½Ó&ñd���¦ ½½+É Ãº e����. ����"f ë�H)3����·ú��Ér ��6£§õ� °ú s� jþt ú

e��ܼ 9

Vt = −qn0ds

Ci

+ Vfb (2.49)

ìøÍ���� p-type��� �âĺ\���H

Vt =qn0ds

Ci

+ Vfb (2.50)

�Ð ÂÒ ñ�� ����â�)a��.

»¡¤&h��©�I�\�"f gateü< drain\� �����÷&��H ���·ú�_� ÂÒ ñ��H 1lx{9� �>� �)a��.

����"f drain ���·ú�s� gate ���·ú�\� ]X���H �>� ÷&��� drain-gateçß�_� ���·ú��s���H

y���è �>� �)a��. ����"f d�� 2.48�Ér Vd > Vg {9� �âĺ\���H �8 s��©� Ä»6 xô�Ç d��

s� |c ú \O���. Õªo��¦ ÕªaË> 2.9\�"f �Ð#�t�1pws� drain %ò%i� ��H%�\� /BN�9�%ò%i�

24

Page 33: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

s�Òqtl�>��)a��.Õªo��¦ÕªaË> 2.9\�"f V(x) = Vg ÷&��Ht�&h��¦�â>��Ð��¾º#Q

drain ���ÀÓ\�¦ ½ �>� ÷&���

Id,sat =Z

L

∫ Vg

0(Vg − Vt − V )dV +

∫ Vd,sat

Vg

(ds −W )dV (2.51)

�Ð jþt ú e����. #�l�"f W��H /BN�9�%ò%i�_� ;�¤�¦ _�p� � 9

W (x) =εs

Ci

√√√√1 +2C2

i (Vg − Vfb − V (x))

qNεs

− 1

(2.52)

�Ð ³ð�&³÷&#Q �����. εs��H ìøÍ��_� Ä»���Ö�¦, N�Ér ����àÔ(dopant)_� 0lx�s���.

d�� 2.52\�¦ d�� 2.51\� @/{9� ��¦ Cs >> Ci�Ð ��&ñ �#� éß�í�H�o r�v����

Id =Z

2LµCi(Vg − Vt)

2 (2.53)

�¦ %3���H��. d�� 2.53ܼ�ÐÂÒ'� s�1lx�\�¦ ½½+Éú e����.

25

Page 34: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

Eg

Ec

Ei

EF

Ev

������������ �������������������� ��������������������

qVfb

Φm

qχs

Figure 2.3 s��©�&h���� Metal-insulator-semiconductor ]X�½+Ë_� \��-t� {�ÕªaË>

26

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Ec

EFEv

EF

EiV < 0

Ec

EFEvEF

Ei

V > 0

Ec

EFEv

EF

Ei

V > 0

(a)

(b)

(c)

Figure 2.4 MIS juction\����·ú������r�\��-t�{�����o, (a)»¡¤&h�( V < 0 ), (b)

/BN�9�( V > 0 ), (c) ìøÍ���(V > 0, Ef > Ei)

27

Page 36: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

Figure 2.5 MIS ]X�½+Ë\�"f_� >�������·ú�\� ���Ér >������� �_� ����o[23]

28

Page 37: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

Figure 2.6 MISFET ½�

29

Page 38: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

Figure 2.7 MISFET_� Vg − Id:£¤$í/BG���

30

Page 39: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

Figure 2.8 MISFET_� Vd − Id:£¤$í/BG���

31

Page 40: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

Figure 2.9 TFT_� »¡¤&h�, �í�o�©�I�

32

Page 41: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

Chapter 3

�� ��@

3.1 �¿�� V�¼ÇÐ

�:r ���½\�"f��H ÕªaË> 3.1�¦ �Ð��� ����$í�¦ ����� PPyõ� PEDOTõ� ]X�

���$í�¦ ����� PVCNõ� epoxy\�¦ s�6 x �#� FET�è��\�¦ ]j��� �%i���. pyrroleõ�

EDOT�¦ l�íß�×�æ½+Ë~½ÓZO�ܼ�Ð PPyõ� PEDOTܼ�Ð ×�æ½+Ë �#� �Ö$í8£xõ� ����FGܼ

�Ð ��6 x �%i��¦ PVCNõ� epoxy\�¦ spin-coating~½ÓZO��¦ s�6 x �#� ]X����8£xܼ�Ð

��6 x �%i���.

l�íß�×�æ½+Ë�¦ s�6 x �#� ��� Ä»l� FET�Ð ]j����¦ �>� ÷&��� APCVD (at-

mospheric pressure Chemical Vapor Deposition), PECVD(plasma enhanced

Chemical Vapor Deposition) ~½ÓZO�õ� °ú �Ér �¦�:r ���/BN 7£x�ÃÌ �©�q��� ,½¹כ /BN&ñ

_� 4�¤ú�$í\� e��#Q"f ú§�Ér ë�H]j&h��¦ �©��:r\�"f spin coating, solvent casting,

printing1px_�çß�éß�ô�Ç/BN&ñ�¦s�6 x ����@/���&h��ïh�As���0px � 9,�o�<ƽ����

33

Page 42: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

�o�� 6 xs� �#� ���ª�ô�Ç :£¤$í_� ]j#Q�� ��0px �����H �©�&h�s� e����.

3.1.1 e�ñ5Ñä»TÒ¼'�×ß��(Photolithographic Patterning Method)

l�íß�×�æ½+Ë~½ÓZO�s�êøÍ �©��:r\�"f @/l� ×�æ\�"f éß�|¾Ó�\�¦ s�6 x �#� µm éß�0A

��t�����$í�¦ì�r���Ð patterning�¦ ���H� s���.l�íß�×�æ½+Ëכ�l����\�íß��o}��

6 xÓ�oõ� ]X����8£x 6 xÓ�o�¦ ï�rq�ô�Ç��. íß��o}�� 6 xÓ�o�Ér matrix �¦ì�r�� %i�½+É�¦ ���H

poly(vinyl alcohol) (PVA)ü< ����àÔs���íß��o]j%i�½+É�¦ ���H ferric p-toluene

sulfonate (FTS)�Ð ½$í÷&#Qe����.íß��o}��6 xÓ�o�Ér PVA 0.4 g�¦7£xÀÓú 5 ml\�

¢-a���y� 0lq��� Êê BjòøÍ�¦ 5 mlü< FTS 1.6 g�¦ V,��¦ ¢-a���y� 0lq%i���. 6 xÓ�o 5Åq\�

Ô�¦í�HÓüts� '����÷&#Q e���¦ �âĺ\�¦ @/q� �#� �9�'�a�AÙþ¡��. ]X����8£x 6 xÓ�o�¦ ëß�×¼

��H ~½ÓZO��Ér 6 xB��� monochloro benzeneõ� toluene�¦ �¦µ¢§q��� 3:1��� 6.66 gü<

1.74 g�Ð �D¥½+Ë �%i���. 6 xB� 5Åq\� ]X����� %i�½+É�¦ ���H PVCNõ� epoxy�� '����

�#� 0lq%i���.

l�íß�×�æ½+Ëõ�&ñ�Ér ÕªaË> 3.2 %�!3� e�¦��Û¼hË: l�óøÍ\� íß��o}�� 6 xÓ�o�¦ 2000

rpm_� 5Åq��Ð 60�í 1lxîß� spin-coating�¦ �%i���. spin-coatingô�Ç e�¦��Û¼hË: l�

óøÍ\� photomask\�¦ @/�¦ ���©�s� 365 nm��� UV\�¦ 5ì�r\�"f 15ì�r 1lxîß� �e#� ÅÒ

%3���. s�M: UV�� ú��Ér /BM�Ér FTS 6 xÓ�o_� Fe3+�� Fe2+�Ð ���§�)a��. ìøÍ��� ú�

t� ·ú§�Ér /BM�Ér Fe3+�Ð ����àÔ�Ð z����e��>� �)a��. ��t�}��ܼ�Ð UV\�¦ ú��Ér e�¦��

Û¼hË: l�óøÍ�¦ 6fµ1Ï$ís� a%~�Ér EDOTõ� pyrroles� {����4R e����H q�&�\� Z�~��¿º

��� ����àÔ Fe3+ü< EDOT õ� pyrroles� ×�æ½+ËìøÍ6£x�¦ �#� y��y�� ����$í �¦ì�r��

PEDOTü< PPy�� �)a��.

34

Page 43: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

3.1.2 ¦�> ËÂe� Field Effect transistor (OFET) V�¼ÇÐ '�×ß��

��� Ä»l� OFET ¢��H SFET ]j��� ~½ÓZO��Ér ÕªaË> 3.3_� í�H"f�Ð l�íß�×�æ½+Ë~½Ó

ZO��¦s�6 x �%i���.×�æ½+Ë�)a PEDOTõ� PPy�¦;�¤s� 1 nms��¦¿ºa��� 500 nm���

>�s�àÔ\�¦ ëß�[þt%3���. ]X����8£x�Ér PVCNõ� epoxy ]X����� 6 xÓ�o�¦ spin-coating �

%i���. coatingÊê�â�or�v�l�0AK����©�s� 254 nm��� UV\� 20ì�r1lxîß� �Ø�¦r�(��

��.s�M:]X����8£x_�¿ºa���Hy��y�� 400 nm, 200 nms���.¿ºa�_��s���H epoxy��

PVCN�Ð�� ì�r��|¾Ós� �8 &h�l� M:ë�Hs���. ]X����8£x 0A\���H ��r� l�íß�×�æ½+Ë~½ÓZO�

�¦s�6 x �#� sourceü< drain_�����FGõ��Ö$í8£x�¦¿ºa��� 500 nm,;�¤s�y��y�� 30

µm, 18 µm��� PEDOTõ� PPy�¦]j��� �%i���. ���Hõ�&ñ�¦��u����ÕªaË> 3.4ü<

°ú �Ér ��� Ä»l� OFET �è���� ]j���s� �)a��. �è����H $íç�H�'a@/�<Æ�§ s�ï�r%ò�§Ãº

���½z�\�"f ]j���÷&%3���.

35

Page 44: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

3.2 �¿���+ ¦�>e� §�Å]� ��� Ä©Å]��ä·���+ ¥�Ça�'�×ß��

�è��_� ���1lx"é¶o�\�¦ ½©"î �l� 0AK�"f��H �è��\�¦ s�ÀÒ��H Óüt|9�[þt_� l��:r

Óüt$íõ� �è��_� :£¤$í\� @/K� ���½\�¦ Ùþ¡��. �è��\�¦ s�ÀÒ��H Óüt|9�[þt_� l��:rÓüt$í

�Ér�Ö$í8£x_�f��ÀÓ���l������z�+«>õ�]X�����_�Ä»����©�ú\�¦8£¤&ñ ���H ACz�

+«>�¦Ãº'�� �%i���.l��:rÓüt$íz�+«>s�=åQèß�Êê�è��_����l�&h�:£¤$íõ� ½1lx"é¶o�

\� @/K� z�+«> �%i���.

3.2.1 ÒÏ�ÇÚ ¦�>e� ¦�>�¿�¿ ¥�Ça�

f��ÀÓ ���l� �����_� 8£¤&ñ�¦ 0AK� ]X�8ú¤ $��½Ó�¦ ]j��ô�Ç 4éß��� ]X�8ú¤ZO��¦

��6 x �%i���. ÕªaË> 3.5ü< °ú s� r�«Ñ\�¦ ���Ér Êê carbon paste\�¦ s�6 x �#� l�íß�

×�æ½+Ëܼ�Ð ]j����)a r�«Ñ\� í�H� 99.99 % _� 4>h_� gold wire�¦ ·¡­#� 4>h_� éß�

��\�¦ ëß���H��. ü@ÂÒ_� 2>h_� éß���\� ���ÀÓ\�¦ �� ����"f ?/ÂÒ_� 2>h_� éß���\�"f

���·ú��¦8£¤&ñ �#�q�$��½Ó�¦ ½ô�Ç��.r�«Ñ_�¿ºa�(t)ü<?/ÂÒ_� 2éß�����s�_���

o�(l)ü<r�«Ñ_�;�¤(w)�¦ ½ �#� r�«Ñ_�q�$��½Ó�¦>�íß�ô�ÇÊê,s�_�%i�ú���f��

ÀÓ ���l� �����\�¦ ½ô�Ç��.

R = ρl

tw(3.1)

s�M: Ä»_�&h��Ér ���ÀÓü< ���·ú�_� �FG$ís� °ú ���� ô�Ç��. 4éß���_� çß����s� �

¿º {9�&ñK��� � 9 î'��K��� ô�Ç��. î'�� ���� 1px���0A���s� +þA$ís� ÷&l�\� &ñSX�

ô�Çf��ÀÓ���l������\�¦8£¤&ñ½+Éúe����[24]. ���ÀÓü<���·ú��¦8£¤8£¤&ñ �l�0AK�

"f��H Keithley 237 High Voltage Source-Measure Unit (SMU)\�¦ ��6 x �%i���.

36

Page 45: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

�:r� z�+«>r� r�«Ñ\�¦ Cryostat\� V,�#Q"f ���/BN�¦ 30 mTorrs� ��Ð ?/o� 9 Ä»t�

��¦ �:r� �]X��Ér Lakeshore DRC91-CA Temperature Controller\�¦ ��6 x �%i�

��.

3.2.2 OFET�+ ˦�>¥� �+ AC ˦�> (�×ÊÁ (dielectric con-

stant) ¥�Ça�

AC Ä»��� �©�ú 8£¤&ñ �©�q���H 8£¤&ñl�l���� Quadtech 7600 Precision RLC

Meter ü< (��ÉÓ'� ���'��s�Û¼�Ð ��Ðüt ú e����. r�«Ñ ï�rq���H ÕªaË> 3.6 %�!3� ���

�FGܼ�Ð��H s�p� ITO�� 7£x�ÃÌ�)a Ä»o� l�óøÍ�¦ t�2£§s� 7 mm��� "é¶��ª�ܼ�Ð \�g�A

�%i��¦����FGl�óøÍ\�]X������Ð æ¼s���H PVCN, epoxy\�¦ 400 nm, 200 nm¿ºa��Ð

spin-coating �%i���. ]X����� Óüt|9� 0A\� ����FG�¦ ëß�[þtl� 0AK� \P� 7£x�ÃÌܼ�Ð ·ú�

ÀÒp�³ou�¦ 7£x�ÃÌ �%i���. 8£¤&ñ�Ér r�«Ñ_� ·ú�ÀÒp�³ou ����FG\� PH, IH éß���\�¦ ITO

����FG\���H PL, ILéß���\�¦ ������ �#� ÅÒ��ú�� 100 Hz ∼ 2 MHzs��¦ ���\�"f

2 V_� DC���·ú�������l��©��¦�� �%i���.(��ÉÓ'� GPIB���'��s�Û¼ �×¼\�¦��6 x

�#� 8£¤&ñl�l�\�¦ ]j#Q �#� r�«Ñ_� ���l�6 x|¾Ó�¦ 8£¤&ñ �%i���. ���l�6 x|¾Ó 8£¤&ñ

r���l�|cúe����HÔ�¦�9¹כ�ô�ÇÂÒ��&h����l�6 x|¾Ó�ÉrÁºr� �%i���.Õªs�Ä»��Hr�«Ñ

_� ¿ºa��� F�g�©�y� ·ûªl�\� ���l��©�s� ���Ð r�«Ñ\� ����9 ���l�6 x|¾Ó_� °úכ�Ér ����<Ê

s� \O�l� M:ë�Hs���.

3.2.3 Soft OFET ¥�Ça�

37

Page 46: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

FET 8£¤&ñ �©�q���H ÕªaË> 3.7õ� °ú s� �è��\�¦ ÂÒ�ÃÌ ���H �©�u�, 8£¤&ñl�l�ü<

(��ÉÓ'����'��s�Û¼�Ð��Ðütúe����.8£¤&ñl�l��Ð��H SMU\�¦¿º@/\�¦��6 x �%i�

��. SMU ô�Ç@/��H source-drain çß� ���·ú�\� ���Ér ���ÀÓ\�¦ 8£¤&ñ ��¦ ���Ér ô�Ç@/��H

source-drain���ÀÓ_�����o\�¦ÅÒl�0Aô�Ç gate���·ú��¦����� � 9¾º[O����ÀÓ\�¦8£¤&ñ

�%i���. �è��\�¦ 8£¤&ñl�l�ü< ������ �l� 0AK� PEDOTü< PPy�¦ silver paste��

carbon paste�Ð gold wire\�¦ ÂÒ�ÃÌr�(����. (��ÉÓ'� ���'��s�Û¼�Ð GPIB ���'��

s�Û¼ �×¼\�¦ ��6 x �#� SMU\�¦ (��ÉÓ'�_� áÔ�ÐÕªÏþ�ܼ�Ð ]j#Q\�¦ ��¦ X<s�'�

\�¦ %3�%3���.

(1) ���ÀÓ-���·ú� (I-V) :£¤$í

gate���·ú�\����Ér source-drainçß�_����ÀÓ\�¦8£¤&ñ ���� FET7£¤,àÔ�½�t�Û¼

'�_� :£¤$í��� ���ÀÓ &h�Y>�q�(Ion/Ioff)ü< ���²ú� �� ü����Û¼ (trans-conductance) 1px

�¦8£¤&ñ½+Éúe����. Soft OFET�è����H gate����FGs������оú�o�t�·ú§�¦;�¤s�

1 mm s�l�\� source drainçß�_� G�V,� U�s� 7£¤, contact ���H /BM\� ���Ér gate ò

õ� z�+«>�¦ �%i���. source drainçß�_� U�s�\� ���� gate_� %ò�¾Ó�¦ ~ÃÎ��H &ñ��

²ú���|9� ��s�lכ M:ë�Hs���.

(2) ½1lx�¦ ½©"î �l� 0Aô�Ç z�+«>

OFET_� ½1lx~½ÓZO��¦ ·ú�l�0AK� r�çß�\� @/ô�Ç _��>r z�+«>õ� �:r�z�+«>s�

¹כ��9���. s� ¿º ��t� z�+«>�¦ :�x �#� OFET_� éß�&h�� �Т-a½+É Ãº e���¦ �¼Üכ

�Ð \V�©��)a��. z�+«> ~½ÓZO��Ér Õþ�!Q5Åq\� �è��\�¦ V,��¦ gate ���·ú�\� ���Ér source-

38

Page 47: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

drainçß�_� ���ÀÓ\�¦ 8£¤&ñ ���H ~½ÓZO�õ� °ú s� SMU ¿º @/\�¦ s�6 xô�Ç��. #QÖ¼ :£¤&ñ

ô�Ç gate ���·ú�\�"f gate ���·ú�s� �����|c M:ü< �����÷&t� ·ú§�¦ M:\�¦ r�çß�\� @/K�

source-drain ���ÀÓ�� #Qb�G>� ����o ���Ht� ·ú����Ð��H z�+«>s���. Õªo��¦ �:r�z�

+«>�Ér r�çß�\� @/ô�Ç _��>r z�+«>\�"f Ó�o�|9��è\�¦ Õþ�!Q 5Åq\� V,�#Qº¡§Ü¼�Ð+� �:r�

��b��#Qt���H� s�6 x¦�כ�#�z�+«>�¦ �%i���.s�M:Õþ�!Q_��:r�ü<r�«Ñ_��:r�

�� ��ØÔl�\� r�«Ñ_� �:r�\�¦ ·ú� ú e����H shielding case\� V,��¦ z�+«>�¦ �%i���.

39

Page 48: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

CH2 CH

On

C

CH

O

CH

OO

S n

CH

OC OCH

OCH2CHCH2OCO

CCH3

CH2

CH3 C

CH3CH3

OCH2CHCH2O CH2

C OCH

O

CH

CCCH3

n

CH

O

(a) (b)

(c) (d)

NH

n

Figure 3.1 ����$í �¦ì�r�� Óüt|9�_� �o�<ƽ�: (a) PEDOT (b) PPy,

]X����$í Óüt|9�_� �o�<ƽ� : (c) PVCN (d) Epoxy

40

Page 49: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

Figure 3.2 l�íß�×�æ½+Ë~½ÓZO�

41

Page 50: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

Figure 3.3 Ä»���ô�Ç OFET ]j���õ�&ñ

42

Page 51: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

Figure 3.4 OFET_� >h|ÄÌ� (a) î���� (b) �Ö$í8£x %ò%i�(c) 8£¤����

43

Page 52: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

Vlow Vhigh

IhighIlow

Figure 3.5 f��ÀÓ ���l� �����

44

Page 53: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

Figure 3.6 Quadtech 7600 Precision RLC Meter

45

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Chapter 4

����@ Úrø� ��� �×�+

4.1 kכ�Ø�+ §�Å]�

4.1.1 PEDOT�+ ÒÏ�ÇÚ ¦�>�¿�¿ ¥�Ça� ��� Öeµ�¿ �+×iµÅ]� Úrø� &P�

�7�

l�íß�×�æ½+Ëܼ�Ð ×�æ½+Ëô�Ç PEDOT r�«Ñ\� @/K�"f ���l������ �:r� _��>r$í

z�+«>�¦ ú'�� �%i���. �©��:r ���l� �������H 1 ∼ 10 S/cm ܼ�Ð 8£¤&ñs� ÷&%3���.

ÕªaË> 4.1�Ér ���l� �����_� �:r� _��>r$í z�+«>���õ�s���. ÕªaË> 4.1 (a)\�"f��H

PEDOT_� ��� � s�1lxs� ï�r 1�"é¶&h� VRH �+þA�¦ ���Ér����H �¦�כ ·ú� ú e��%3�

��. ï�r 1�"é¶&h� VRH �+þA_� �����ü< l�Ö�¦l� T0��H ��6£§õ� l�Õüt�)a��.

σdc = σ0exp[−(T0

T)1/2] (4.1)

46

Page 55: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

T0 =16

kBN(EF )L‖L2⊥

(4.2)

OFET_� ½1lx~½ÓZO��¦ ·ú�l�0AK� r�çß�\� @/ô�Ç ���l� �����_� _��>r z�+«>

õ� �:r�z�+«>s� ¹כ��9���. ¿º ��t� z�+«>�¦ :�x �#� OFET_� éß�&h�� �Т-a½+É Ãº

e���¦����\�ܼ�Ð\V�©��)a��.z�+«>~½ÓZO��ÉrÕþ�!Q5Åq\��è��\�¦V,��¦>�s�àÔ���·úכ

�Ér ×¼YU���-�èÛ¼çß�_� ���ÀÓ\�¦ 8£¤&ñ �%i���. :£¤&ñô�Ç >�s�àÔ ���·ú�\�"f >�s�àÔ ���

·ú�s������|cM:ü<�����÷&t�·ú§�¦M:\�¦r�çß�\��èÛ¼-×¼YU������ÀÓ��#Qb�G>����

�o ���Ht� ·ú����Ð��H z�+«>s���. Õªo��¦ �:r�z�+«>�Ér r�çß�\� @/ô�Ç _��>r z�+«>\�

"f Ó�o�|9��è\�¦ Õþ�!Q5Åq\� V,�#QÅÒÙ¼�Ð �:r��� b��#Qt���H �¦�כ s�6 x �#� z�+«>

�¦ ú'�� �%i���. s�M: Õþ�!Q_� �:r�ü< r�«Ñ_� �:r��� ��ØÔl�\� r�«Ñ_� �:r�\�¦

·ú� ú e����H shielding case\� V,��¦ z�+«>�¦ �%i���.

d�� 4.2\�"f N(EF )��H Fermi level\�"f_��ª����©�I�x9��s��¦, kB��H Boltz-

mann �©�ús���. L�Ér r�«Ñ_� ²DG�è�o &ñ�\�¦ ·ú� ú e����H localization lengths�

��. L‖, L⊥�Ér ÅÒ ��_þt_� úî ~½Ó�¾Óõ� úf�� ~½Ó�¾Óܼ�Ð_� ��� � ²DG�è�o U�s�\�¦

_�p�ô�Ç��. ÅÒ ��_þt_� ~½Ó�¾Ó�Ér Áº|9�"f �>� ���>h÷&#Q L‖, L⊥�¦ ½ì�r½+É Ãº�� \O�

ܼټ�Ð îç�H&h���� °úכ L�Ð �Ð��H ��sכ &h�{©� ���. T0��H N(EF )ü< L_� �<Êú�Ð r�

«Ñ_��:r��â�¾Ó$í�¦����?/��Hl�Ö�¦l�s���. ¢ô�Ç T0°úכ�Érr�«Ñ?/����� ¢��H���

� î�rìøÍ���� |��-����HX< �FG4�¤K��� ½+É \��-t� �©�#4�s���. l�íß�×�æ½+Ëܼ�Ð ×�æ½+Ë

ô�Ç PEDOT_� T0 °úכ�Ér 3600Kܼ�Ð 8£¤&ñ÷&%3���. ÕªaË> 4.1(b)\�"f��H 8�íß� �Ö$í

\��-t� (W)_� �:r� _��>r$í�¦ ����?/%3��¦, ��6£§õ� °ú s� &ñ_��)a��.

W (T ) ≡ log10(d ln σdc(T )

d ln T) (4.3)

47

Page 56: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

ln W = ln(nT0n)− n ln T (4.4)

d�� (4.4)\�¦ ��6 x �#� W-plot_� l�Ö�¦l� n�¦ ½½+É Ãº e����. n�Ér >�_� �"é¶õ� �'a

º��s�e����. n_�ÂÒ ñ�ÐÂÒ'�r�«Ñ���FK5Åq&h��©�I����t�]X�����&h��©�I����t���m�

��� Õª �â>�����©�\� e����Ht� ·ú�ú e����. n > 0��� ��&h� $í|9��¦ ��t��¦ n = 0s�

��� �â>�����©�\�"f �>rF� � 9 n < 0��� ÂÒ��&h���� $í|9��¦ ��t��¦ e����. l�íß�×�æ

½+Ëô�Ç PEDOT_� W-plot_� l�Ö�¦l� n°úכ�Ér -0.56�Ð ]X�����&h���� :£¤$íe���¦ �'a¹1Ï

�%i���.

48

Page 57: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

Figure 4.1 f��ÀÓ���l������_��:r�_��>r$íz�+«>���õ�: (a)ï�r 1�"é¶&h� VRH

�+þA\� plot, (b) W-plot

49

Page 58: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

4.1.2 â�¥o>¥� �+ ˦�>(�×ÊÁ

Ä»�����Ð æ¼s���H PVCNõ� epoxy_�Ä»����©�ú\�¦8£¤&ñ �l�0AK� AC���·ú�

�¦ ���#QÅÒ���"f ÅÒ��ú\� ���� 4�¤�è e��x�~��Û¼ Z\�¦ 8£¤&ñ �%i���. s�M: 4�¤�è e��

x�~��Û¼�Ð ÂÒ'� Ä»����©�ú κ∗�� ½K������.

1

Z∗ = iwκ∗C0 (4.5)

#�l�"f, C0��H ���/BN ���l�6 x|¾Ós���. ���/BN\�"f_� ���l�6 x|¾Ó�Ér

C0 = ε0πr2

t(4.6)

�Ð r = 3.5 mm, t = 400 nm, ε0��H ���/BN\�"f_� Ä»���Ö�¦s���. 4�¤�è Ä»����©�

ú κ∗ = κ′ − iκ′′\�"f κ′s� AC Ä»����©�ú°úכs���. ÕªaË> 4.2��H ÅÒ��ú\� ���Ér

Ä»����©�ú\�¦ 8£¤&ñô�Ç ���õ�s���. ÕªaË> 4.2 (a)��H ]X����� PVCNܼ�Ð Ä»����©�ú��

∼3.55�Ð8£¤&ñs�÷&%3��¦,ÕªaË> 4.2 (b)��H]X����� epoxy�Ð+�Ä»����©�ú�� ∼5.4�Ð

8£¤&ñ ÷&%3���. Epoxy�� PVCN�Ð�� Ä»����©�ú�� Z�}�Ér s�Ä»��H �o�<Æ ½�\�¦ �Ð

��� epoxy\� aromatica�As� ú§�¦ OH(úíß�l�)��\O�s�u�8�÷&%3�l�M:ë�Hܼ�ÐK�

$3��)a��.

50

Page 59: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

Figure 4.2 Ä»����_� ÅÒ��ú\� ���Ér Ä»����©�ú 8£¤&ñ : (a) κ∗=3.55 (PVCN)

(b) κ∗ =5.4 (epoxy)

51

Page 60: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

4.2 Soft OFET

4.2.1 OFET §�Å]� Úrø�

ÕªaË> 4.3�Ér source-drainG�V,�U�s��� 1 cm��� PEDOT FET�è��_����ÀÓ-

���·ú� :£¤$ís���. ÕªaË> 4.3_� (a)ü< (b)��H PEDOT/PVCN/PEDOT FET �è��,

ÕªaË> 4.3_� (c)ü< (d)��H PEDOT/epoxy/PEDOT FET�è��\� gate���·ú�(Vg)_�

����o\����Ér source-drain���ÀÓ (Ids):£¤$í8£¤&ñ���õ�s���.ë�H)3����·ú��Éry��y�� 28

V, 27 V�Ð 8£¤&ñs� ÷&%3���. ÕªaË> 4.3_� (b)ü< (d)_� ���õ���H drain ���·ú�(Vds)�¦

20 V�Ð�¦&ñ ��¦ Vg�¦ 0 V\�"f�ª�(positive)_����·ú�ܼ�Ð�� ����"f Ids\�¦8£¤&ñ

ô�Ç���õ�s���.s�\�¦:�xK����²ú��� ü����Û¼(trans-conductance)��Hy��y�� -0.5 µA/V,

-0.5 µA/V�Ð, &h�Y>�q���H 4.6× 103, 2.8× 103ܼ�Ð y��y�� 8£¤&ñ÷&%3���. ÕªaË> 4.4��H

source-drain G�V,� U�s��� 1 cm��� PPy FET �è��_� ���ÀÓ-���·ú� :£¤$ís���. Õª

aË> 4.4_� (a)ü< (b)��H PPy/PVCN/PPy FET �è��, ÕªaË> 4.4_� (c)ü< (d)��H

PPY/epoxy/PPy FET �è��\� Vg_�����o\����Ér Ids :£¤$í8£¤&ñ���õ�s���.ë�H

)3����·ú��Ér y��y�� 57 V, 32 V�Ð 8£¤&ñs� ÷&%3���. ÕªaË> 4.4 (b)ü< (d)��H Vds�¦ 20

V�Ð �¦&ñ ��¦ Vg\�¦ 0 V\�"f �ª�(positive)_� ���·ú�ܼ�Ð �� ����"f Ids\�¦ 8£¤&ñ

ô�Ç ���õ�s���. s�\�¦ :�xK� ���²ú� �� ü����Û¼��H -0.3 µA/V, -0.35 µA/V�Ð &h�Y>�q�

��H 8.2 × 102, 6.6 × 102ܼ�Ð y��y�� 8£¤&ñ÷&%3���. PEDOTõ� PPy FET �è�� �

¿º Vg�¦ 0\�"f�ª�_�°úכܼ�Ð7£x��½+Éú2�¤ Ids /åL���y�y���è �%i���. p-type_�/BN

�9�+þA ìøÍ�� :£¤$íe���¦ ·ú� ú e����. 7£¤, ÅÒ�)a ��� �î�rìøÍ���� &ñ/BNe���¦ SX���� ½+É

ú e��%3���. PEDOT FET �è��ü< PPy FET �è��\� Vg�¦ 1lx{9� r�çß�1lxîß� ��

�%i���. Vg\� @/K� 6£x²ú�5Åq��� Ö¼�2; ��Érכ Vg\� Ids�� �í�o%ò%i�s� �>rF� ���H

52

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�כ %�!3� �Ðs���H PPy FET �è��s�%3���. Õª�QÙ¼�Ð FET�è���Ð+� PPy FET�Ð

����H PEDOT FET�è���� �8 &h�{©� ���.

ÕªaË> 4.5��H PEDOT/PVCN/PEDOT FET �è��\� sourceü< drainçß� G�

V,�_� contact U�s�(`)�� y��y�� ` = 3 mm, ` = 1 mm{9� �âĺ Vg_� ����o\� ��

�Ér Ids :£¤$í 8£¤&ñ ���õ�s���. �ª�_� Vg�¦ ����� ���� Ids��H /åL���y� y���èô�Ç��. 6£§

_� Vg�¦ �����r� ` = 3 mm {9� �âĺ �Ð�� ` = 1 mm {9�M: Vg\� @/ô�Ç Ids_� ���

�o��H �8 ß¼����H �¦�כ �'a¹1Ï �%i���. 7£¤, 6£§_� Vg\� @/K� �í�o%ò%i�s� ����z�¤��.

�ª�_� Vg\�����y���è ���H Ids�Ð��6£§_� Vg\�����7£x�� ���H Ids_�°úכ�Ér�����¤

��. ���ÀÓ 7£x�� &ñ�\�¦ ·ú����Ðl� 0AK� 7£x��q�Ö�¦�Ð d�� 4.7õ� °ú s� 7£x��q�Ö�¦ d��

�¦ ��6 x �%i���.

[Ids(Vg = 0V )− Ids(Vg = 35V )

Ids(Vg = 0V )× 100] (4.7)

ÕªaË> 4.6�Ér PEDOT/PVCN/PEDOT FET�è��\� Vds\�¦ 20 V�Ð�¦&ñ ��¦ `s�

y��y�� 1 cm, 3 mm, 1 mm {9�M: Vg\� @/ô�Ç ���ÀÓ ����o|¾Ó_� ���õ�s���. Vg = -35

V\�"f d�� 4.7\� ���� `s� y��y�� 1 cm, 3 mm, 1 mm {9�M: ���ÀÓ 7£x��Ö�¦�Ér 0 %,

1.3 %, 10.6 %�Ð `s� Âúª�� |9�ú2�¤ 6£§_� Vg\� @/K� ���ÀÓ_� 7£x��Ö�¦s� &�f���¦

�'a¹1Ï ½+É Ãº e��%3���. �ª�_� Vg�� �����÷&��� Ids�� /åL���y� y���è ���H ��Érכ Vg\�

���� G�V,�_� ¿ºa��� a%v��t���H #î3lq�&³�©�s� ������l� M:ë�Hs���.

53

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Figure 4.3 PEDOT OFET �è��_� ���ÀÓ - ���·ú� :£¤$í : PE-

DOT/PVCN/PEDOT �è��_� (a) Ids vs. Vdsü< (b) Ids vs. Vg, PE-

DOT/epoxy/PEDOT �è��_� (c) Ids vs. Vdsü< (d) Ids vs. Vg

54

Page 63: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

Figure 4.4 PPy OFET�è��_����ÀÓ -���·ú�:£¤$í : PPy/PVCN/PPy�è��_�

(a) Ids vs. Vdsü< (b) Ids vs. Vg, PPy/epoxy/PPy �è��_� (c) Ids vs. Vdsü<

(d) Ids vs. Vg

55

Page 64: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

Figure 4.5 PEDOT/PVCN/PEDOT �è��_� contact G�V,� U�s�\� ���Ér Ids

vs. Vds:£¤$í (a) ` = 3 mm, (b) ` = 1 mm

56

Page 65: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

Figure 4.6 PEDOT/PVCN/PEDOT �è��_� contact G�V,� U�s�\� ���Ér Ids

vs. Vg :£¤$í

57

Page 66: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

4.2.2 OFET ¼ÇÐ�â xjSh� ��� Ä©�â B�ÃZ�

ÕªaË> 4.7�Ér PEDOT/PVCN/PEDT FET �è��\�¦ Vg\� @/ô�Ç f��ÀÓ ���l�

����� ����o\�¦ �'a¹1Ïô�Ç ���õ�s���. Vg�¦ ����� �t� ·ú§�¦M:_� f��ÀÓ ���l� ����

�_� °úכ�Ér 7.65 S/cm�Ð 8£¤&ñs� ÷&%3���.Vg\�¦ 2 V, 4 V, 8 V�Ð ����� ���� 7.58

S/cm, 7.21 S/cm, 7.18 S/cm�Ð y���è�<Ê�¦ �'a¹1Ï �%i���. 7£¤ Vg = 0 V {9�M:_�

Normalized f��ÀÓ ���l� �����_� °ú�כ¦ 1�Ð ¿º#Q Vg\�¦ ����� ���� 0.991, 0.943,

0.939�Ð y���èH�d�¦ ·ú�úe��%3���. Vg\� ���Ér f��ÀÓ ���l� �����_� ����o�� &h�>�

����z���¦ ·ú� ú e��%3���.

Figure 4.7 PEDOT/PVCN/PEDOT �è��_� >�s�àÔ ���·ú�\� ���Ér �����

����o

58

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ÕªaË> 4.8��H PEDOT/PVCN/PEDOT FET�è��\�¦r�çß�\����Ér Ids\�¦�'a

¹1Ïô�Ç �.���sכ Vds\�¦ 10 V�Ð �¦&ñô�Ç Êê Vg\�¦ 30 V�Ð 20ì�r 1lxîß�, 0 V�Ð 1r�çß�

1lxîß� ����� � 9 Ids�¦ 8£¤&ñô�Ç �.���sכ Vg\�¦ 30 V�Ð ��K�ÅÒ��� Ids��H y���è ��¦

Vg�¦ 0 V�Ð 1r�çß� 1lxîß�_� Ids\�¦ 8£¤&ñ ���� ���ÀÓ��H &h�� �r4�¤�)a��. Vg�¦ 30 V

�Ð 1�, 2�, 3���K�ÅÒ��� Ids��¢-a���y�y���è ���HX<���o���Hr�çß��Ér×�¦#Q[þt%3�

��. Õª s�Ä»��H Vg\� @/K� Ids�� training÷&l� M:ë�Hs���.

ÕªaË> 4.9��H ÕªaË> 4.8\�"f 'Í���P: Vg = 30 V, 20ì�r1lxîß� �����K� ï�r Êê 1r�çß� 1lx

îß� s�¢-a÷&��H Idss���. Stretched-Exponential s�¢-aܼ�Ð fittings� �)a��. 7£¤

I(t) = I(∞)− I(∞)exp[−(t

τ)β] (4.8)

∆I(t) = I(∞)− I(t) = Aexp[−(t

τ)β] (4.9)

β��H 0\�"f 1��s�_� °úכܼ�Ð 0.69\�"f 1�Ð &h�&h� &�&���¦ τ��H 600 sec�Ð �

A� ����2;����H �¦�כ ·ú� ú e����. Relaxation diffusion\� _�ô�Ç 5Åq��� Ö¼o�Ù¼

�Ð ion\� _�ô�Ç �ܼ�Ðכ K�$3�÷&#Q �����. ÕªaË> 4.10�Ér Vg = 30 V��� �©�I�\�"f

PEDOT FET �è��_� r�çß�\� ���Ér Ids_� ����oÖ�¦s���. Vg\�¦ ��K�ÅÒ��H S��ú��

7£x�� ���� ½+Éú2�¤ r�çß�\� @/ô�Ç ���ÀÓ_� ����o\�¦ ����?/��H peak�Ér ����Ð ����

z�¤�¦ drift5Åq�\�¦����?/��H τ_�°úכ�Ér 194.6 sec, 65.2 sec, 13.9 sec�Ð����z�¤��.

τ_� °úכs� ß¼�¦ peaks� ������ �ܼ�Ðכ �Ð�� ô�Ç 7áxÀÓ_� s��:r\� _�K� drift�)a��

��H �ܼ�Ðכ K�$3� ÷&#Q�����.

ÕªaË> 4.11�Ér PEDOT/PVCN/PEDOT FET �è��\�¦ �:r�_� ����o\� ���Ér

Ids\�¦ r�çß�\� ���� 8£¤&ñô�Ç ���õ�s���. �©��:r �:r�\�¦ 296.8 K, 272 K, 252 K�Ð

y��y�� ±ú�ÆÒ 9 Vg\� ���Ér Ids\�¦ r�çß�\� ���� 8£¤&ñ �%i���. 40ì�r 1lxîß� Vg = 250

V\�¦����� � 9 2r�çß�1lxîß� Vg = 0 V�Ð����� �%i���.�:r���±ú���t����éß�0Ar�

59

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çß�{©� âìØÔ��H Ids��H d�� 4.10õ� °ú s� y���è �%i���.

−dI(t)

dt= I ′(0)exp[−(

t

τ)] (4.10)

�:r�\�¦ ?/o���� thermal\� _�ô�Ç �Ö1lxs� ×�¦#Q[þt�¦ τ_� °úכ�Ér ��� 600 sec�Ð

r�çß�\� ���Ér Ids_� ����o�� Ö¼o�Ù¼�Ð ion\� _�ô�Ç �ܼ�Ðכ K�$3� ÷&#Q�����. �:r�

�� {9�&ñ �>� Ä»t�÷&%3��¦ M: Vg�¦ 250 V�Ð ����� ���� Ids��H /åL���y� y���èô�Ç��.

Ids_� y���èq�Ö�¦�Ér &h�&h� &������. Vg = 0 V {9� �âĺ Ids_� �r4�¤&ñ���H �:r���

±ú���|9�ú2�¤ �8 ú§s� �r4�¤÷&#Q�����. r�çß�s� t������ t�±ú�ú2�¤ ����FG\� _�K� ��

K�t���H \P�s� PVCN�¦ s�¢-ar�&� ]X�����_� ¿ºa��� ����������. 324 Ks��©�s����

UV\� _�K� �â�o�)a PVCNs� s�¢-a�)a��. PVCNs� s�¢-a÷&��� ]X������Ð+�_� %i�

½+É�¦ ½+É Ãº�� \O���.

ÕªaË> 4.12��H PEDOT/PVCN/PEDOT FET �è���� #Q*�ô�Ç ion\� _�K�

½1lx ���Ht� ·ú����Ðl� 0AK� z�+«>�¦ �%i���. Table 4.1�¦ �Ð��� @/l� ×�æ 99 %

s��©� �<ÊÄ»÷&#Q e����H |9��èü< íß��è5Åq\�"f PEDOT OFET�è��_� ���ÀÓ - ���·ú�

:£¤$í z�+«>�¦ �%i���. ÕªaË> 4.12 (a)��H /BNl�\�¦ i(v�Ér ���/BNõ� y��y�� 1l�·ú�\�"f

_� íß��èü< |9��è�©�I�\�"f Vg\�¦ ����� � 9 Ids\�¦ 8£¤&ñ �%i���. Vg\� @/K� gate

_��>r$ís� ������t� ·ú§��¤��. ÕªaË> 4.12 (b)��H @/l� ×�æ\�"f z�+«>ô�Ç ���õ�s���.

@/l� ×�æ\�"f��H gate _��>r$ís� ����z�¤��. @/l� ×�æ\�"f 99 % ��� |9��èü< íß��è

\� _�K� ½1lx÷&t� ·ú§�¦ @/l� ×�æ\�"f s� ¿º ��t��� ]jü@�)a ���Ér ion\� _�K�

PEDOT/PVCN/PEDOT �è����H ½1lxH�d�¦ ·ú� ú e��%3���.

60

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Figure 4.8 PEDOT/PVCN/PEDOT FET �è��_� r�çß�õ� Vg\� ���Ér Ids

����o

61

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Figure 4.9 Vg = 0 V{9� �âĺ_� Ids_� 1st Stretched-Exponential fitting

Figure 4.10 Vg = 30 V{9� �âĺ_� éß�0Ar�çß�{©� Ids

62

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Figure 4.11 �:r� ����o\� ���Ér �èÛ¼ ×¼YU��� ���ÀÓ ����o

63

Page 72: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

Figure 4.12 /BNl�$íì�r\� ���Ér Vg vs. Ids

64

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Table 4.1: /BNl�×�æ_� $íì�r¹כ�è

$íì�r ì�r��|¾Ó �>rF�q�Ö�¦(%)

|9��è(N2) 28.01 78.1

íß��è(O2) 32 20.95

��ØÔ�4H(Ar) 39.94 0.93

s�íß��oòøÍ�è(CO2) 44.01 0.03

{9�íß��oòøÍ�è(CO) 28.01 1.0×10−5

W1�:r(Ne) 20.18 1.8×10−3

ó¡�µ¢§(He) 4.00 5.24×10−4

BjòøÍ(CH4) 16.05 1.4×10−4

ß¼wn��:r(Kr) 83.7 1.14×10−4

��íß��o|9��è(N2O) 44.02 5×10−5

ú�èì�r��(H2) 2.02 5×10−5

��>r(O3) 48.0 2×10−6

65

Page 74: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

Chapter 5

Úr Òeµ

l�íß� ×�æ½+Ë ~½ÓZO��¦ s�6 x �#� Ä»��� ��¦ ÈÒ"îô�Ç soft OFET\�¦ ]j��� �%i�

��. l�íß� ×�æ½+Ë ~½ÓZO��Ér ���/BN 7£x�ÃÌ �©�q�ü< °ú �Ér l�l��� ¹כ��9�t� ·ú§�¦, �©��:r

\�"f spin coatingõ� UV �F�gܼ�Ð çß�éß�ô�Ç /BN&ñ�¦ :�xK�"f soft OFET �è��

\�¦ ]j���½+É Ãº e��%3���. ����FGõ� �Ö$í8£x�Ér �¿º ����$í �¦ì�r��\�¦ s�6 x �#� soft

FET\�¦ ]j��� �#� ÈÒ"î ����"f� ����FGõ� �Ö$í8£x_� contact_� ë�H]j\�¦ K���� ½+É

ú e��%3���. �è��\�¦ ½$í ���H Óüt|9�\� @/K� z�+«>�¦ �%i���. ACz�+«>�¦ :�xK�

PVCNõ� epoxy_� Ä»����©�ú\�¦ ∼ 3.6, ∼ 5.5ܼ�Ð y��y�� 8£¤&ñ �%i���. f��ÀÓ ���

l� ����� z�+«>�¦ :�xK�"f PEDOT_� ������� 1 ∼ 10 S/cm�Ð f��ÀÓ ���l� ���

��_� �:r� _��>r$íܼ�Ð 1-D VRH �+þA�¦ ��2£§�¦ SX���� �%i���. ]j����)a Soft

OFET�è��_� ���1lx"é¶o�\�¦ ½©"î �l� 0AK�"f FET z�+«>�¦ �%i���. PEDOT �è

����H ]X����8£x�¦ PVCN, epoxy\�¦ /ú��¦ �âĺ ë�H)3����·ú� 28 V, 27 V�Ð ���²ú� ��

ü����Û¼(transconductance)��H −0.5µA/V , −0.5µA/V�Ð &h�Y>�q���H 4.6 × 103,

66

Page 75: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

2.8 × 103�Ð y��y�� 8£¤&ñ÷&%3���. PPy �è����H ]X����8£x�¦ PVCN, epoxy\�¦ /ú��¦

�âĺë�H)3����·ú� 57 V, 32 V�Ð���²ú��� ü����Û¼(transconductance)��H −0.3µA/V ,

−0.35µA/V�Ð &h�Y>�q���H 8.2× 102, 6.6× 102�Ð y��y�� 8£¤&ñ÷&%3���. 7£¤ p-type_�

/BN�9�+þAìøÍ��:£¤$íܼ�ÐÅÒ��� �î�rìøÍ������&ñ/BNe���¦SX����½+Éúe��%3���.G�

V,�_� contact U�s��� ����o\� @/ô�Ç >�s�àÔ ���·ú�\� @/K� ���ÀÓ ����o|¾Ó�¦ �Ð���

6£§_� >�s�àÔ ���·ú��¦ �����½+ÉM: contact U�s��� Âúª�� |9�ú2�¤ �í�o%ò%i��Ér ����

���¦ �ª�_� >�s�àÔ ���·ú��¦ ����� ���� �èÛ¼-×¼YU��� ���ÀÓ��H /BN�9�+þA_� +þAI��Ð ��

��èß���. 7£¤ #î3lq�&³�©�ܼ�Ð [O�"îs� ��0px �%i���. ���1lx"é¶o�\�¦ ½©"î �l� 0AK� r�

çß�õ� �:r� _��>r$í z�+«>�¦ ú'�� �%i���. ¿º z�+«>�¦ :�x �#� &ñSX�y� #Q�"� ion\�

_�K� ���1lxs� ÷&��Ht���H ·ú�ú��H \O�%3�t�ëß� 6£x²ú�5Åq��� F�g�©�y� Ö¼�2;�ܼ�Ðכ �Ð

�� ion\� _�K� ½1lx�)a����H ��z��¦ ·ú� ú e��%3���.

·ú¡Ü¼�Ð PEDOT soft FET �è��\�¦ �[j@/ n�Û¼e�¦YUs� ½1lx�è���Ð+� �Ö

6 x ��9��� ĺ��� �����\�¦ ±ú�»¡§ ܼ�Ð+� ÅÒ�)a ��� �î�rìøÍ�� 0lx�\�¦ ±ú�ÆÒ#Q &h�Y>�

q���H Z�}>� &h��Ér >�s�àÔ ���·ú�\� @/ô�Ç ½1lxs� |cú e���2�¤ ���½K��� ô�Ç��.

67

Page 76: polypyrrole (PPy)‘ƒ 6xô ˙ ˜»˙ —ˇˆ·òı àÔ‰Ž t˙Û… (OFET) :⁄$í…ˆ‰¤hynsr.Korea.ac.kr/members/theses/M_h_skang.pdfpolypyrrole (PPy) were used for gate electrode

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70