plasma improvement project

15
LCR MANUFACTURING TECH. GROUP MLCC Mooning Defect Elimination Through Plasma Surface Treatment Prepared by: Loraine Jimenez Termination-Term-Firing Technical Engineer March 24, 2013

Upload: loraine-jimenez

Post on 13-Apr-2017

169 views

Category:

Documents


2 download

TRANSCRIPT

Page 1: Plasma Improvement Project

LCR MANUFACTURING TECH. GROUP

MLCC Mooning Defect Elimination Through Plasma Surface Treatment

Prepared by: Loraine JimenezTermination-Term-Firing Technical EngineerMarch 24, 2013

Page 2: Plasma Improvement Project

LCR MANUFACTURING TECH. GROUP

Background

Mooning improvement

Conclusion and future plan ( p18 ~ p19 )

Opinion ( p20 )

What is Plasma? (physical chemistry) a fourth state of matter distinct from solid or liquid or gas and present in stars and fusion reactors; a gas becomes a plasma when it is heated until the atoms lose all their electrons, leaving a highly electrified collection of nuclei and free electronsStates of Matter

1. Solid2. Liquid3. Gas4. Plasma

Examples of Plasma 1. Flame 2. Lightning 3. Emission from stars, sun, Etc.

Page 3: Plasma Improvement Project

LCR MANUFACTURING TECH. GROUP

Background

Mooning improvement

• Definition of Terms

Term Chipsize MPQA:1. L2-L2. T2-T3. Bandwidth / Mooning Length

Conclusion and future plan ( p18 ~ p19 )

Opinion ( p20 )

Plasma treatment is started the time 0603 models was absorbed at SEMPHIL because the said model, due to its small dimension, is hard obtain optimum termination dipping parameter. Termination Chipsize is a very important MLCC characteristic because this will determine shape of the external electrode of our chips.

Page 4: Plasma Improvement Project

LCR MANUFACTURING TECH. GROUP

Background

Mooning improvement

• Definition of Terms

Term Chipsize MPQA:1. L2-L2. T2-T3. Bandwidth / Mooning Length

Conclusion and future plan ( p18 ~ p19 )

Opinion ( p20 )

L2-L

Copper thickness at the top sur-face part of the chip

Page 5: Plasma Improvement Project

LCR MANUFACTURING TECH. GROUP

Background

Mooning improvement

• Definition of Terms

Term Chipsize MPQA:1. L2-L2. T2-T3. Bandwidth / Mooning Length

Conclusion and future plan ( p18 ~ p19 )

T2-T

Copper thickness at the side sur-face part of the chip

Page 6: Plasma Improvement Project

LCR MANUFACTURING TECH. GROUP

Background

Mooning improvement

• Definition of Terms

Term Chipsize MPQA:1. L2-L2. T2-T3. Bandwidth / Mooning Length

Conclusion and future plan ( p18 ~ p19 )

Band-width

Mooning Length

Page 7: Plasma Improvement Project

LCR MANUFACTURING TECH. GROUP

Mooning improvement

Conclusion and future plan ( p18 ~ p19 )

Mooning Mechanism

Mooning Defect’s main contributor is foreign matter from the surface of the chip. foreign matters’ force of attraction makes the copper paste to climb up the chips. Ex. Oxidized Layer, dust, Etc..

Plasma surface treatment on the MLCC surface → Prevents the spread of external electrode on the surface by removing the foreign matter on the chip’s surface and giving it a hydrophobic property.

Mooning Defect Improvement through plasma treat-ment

Page 8: Plasma Improvement Project

LCR MANUFACTURING TECH. GROUP

Mooning improvement

Mooning Defect Improvement through plasma treat-ment

Plasma Treatment’s Goal 1. Clean the chip’s surface, removing foreign matter that came from the environment. 2. Make the chip’s surface Hydropobic.

Target Model: • 0603 – prone to Mooning Defect due to small chip dimension.• 05A106 – smallest UHL model to protect and improve visual ap-

pearance by preventing the occurrence of Mooning Defect.

Page 9: Plasma Improvement Project

LCR MANUFACTURING TECH. GROUP

Mooning improvement

Conclusion and future plan ( p18 ~ p19 )

Mooning Defect Improvement through plasma treat-ment

Argon Gas (Sputter Effect) – To emit Argon molecules with high pressure to remove foreign materials

“Mooning Defect’s main contributor is foreign matter.”

Solution: 1 )Clean the chip’s surface, removing foreign matter that came from the envi-ronment.

Page 10: Plasma Improvement Project

LCR MANUFACTURING TECH. GROUP

Mooning improvement

Solution 2:“Plasma surface treatment on the MLCC surface → Make the chip’s surface Hy-dropobic.”

Mooning Defect Improvement through plasma treat-ment

Normal chip surface

Hydrophobic surface

C3F6 Gas (Hydrophobic Property) – To emit C3F6 molecules that aids to form a surface that has resis-tance to liquid

Hydrophobic surface makes it hard for the copper paste to travel further on the ceramic body of chips.

Page 11: Plasma Improvement Project

LCR MANUFACTURING TECH. GROUP

Vacuum chamber

Mooning Defect Improvement through plasma treat-ment

RF Power

Reacting Gas (Ar, C3F6)

Pump ex-haust line

Sample

Vacuum

Emission of reacting

gasArgon

(cleaning)

Apply RF power

(13.56MHz)

VentEmission of reacting gasC3F6 (Hydo-

phobic surface)

Apply RF power

(13.56MHz)

Page 12: Plasma Improvement Project

LCR MANUFACTURING TECH. GROUP

When plasma time is too long, Termination top peeled

off occurs.

Over Exposure OK Exposure

Mooning Defect Improvement through plasma treat-ment

Page 13: Plasma Improvement Project

LCR MANUFACTURING TECH. GROUP 13

외관

불량

률 (

%)

Improvement effect : Reduced visual defect rate

Reduced visual defect rate after hydrophobic plasma treatment!

Model : 03A105

Page 14: Plasma Improvement Project

LCR MANUFACTURING TECH. GROUP

Improvement Effect : Mounting Strength improvement

Even though plasma treatment sample has low Bandwidth, mount-ing strength increased from 616g 746g!

Page 15: Plasma Improvement Project

LCR MANUFACTURING TECH. GROUP

Conclusion

Mooning Improvement effectMounting strength im-provement(ASE 向 customer re-quest )

MLCC Visual Im-provement

strong & look good SAMSUNG MLCC !!

Customer Satisfaction

Term Visual Yield