planar diffused silicon photodiodes - sphereoptics · 2017. 8. 11. · 14 photoconductive series...
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0 5 10 15 20 25
13World Class Products - Light Sensing Solutions
0 5 10 15 20 25
Photoconductive SeriesPlanar Diffused Silicon Photodiodes
FEATURES •HighSpeedResponse •LowCapacitance •LowDarkCurrent •WideDynamicRange •HighResponsivity
APPLICATIONS •PulseDetectors •OpticalCommunications •BarCodeReaders •OpticalRemoteControl •MedicalEquipment •HighSpeedPhotometry
0 5 10 15 20 250 5 10 15 20 25
Typical Spectral Response Typical Capacitance vs. Reverse Bias
Typical Dark Current vs. Temperature Typical Dark Current vs. Reverse Bias
ThePhotoconductive Detector Seriesaresuitable forhighspeedandhighsensitivityapplications.Thespectralrangeextendsfrom350to1100
nm,makingthesephotodiodesidealforvisibleandnearIRapplications,
including suchACapplications as detection of pulsed LASER sources,
LEDs,orchoppedlight.
To achieve high speeds, these detectors should be reverse biased.
Typicalresponsetimesfrom10nsto250nscanbeachievedwitha10V
reversebias, for example.Whena reversebias is applied, capacitance
decreases (as seen in the figure below) corresponding directly to an
increaseinspeed.
As indicated in the specification table, the reverse bias should not exceed 30 volts. Higher bias voltages will result in permanent damage to the detector.
Sincea reversebiasgeneratesadditionaldarkcurrent, thenoise in the
devicewillalsoincreasewithappliedbias.Forlowernoisedetectors,the
PhotovoltaicSeriesshouldbeconsidered.
Refer to the Photoconductive Mode (PC) paragraph in the “Photodiode Characteristics” section of this catalog for detailed information on electronics set up.
14
Photoconductive SeriesTypical Electro-Optical Specifications at TA=23ºC
‡The‘I’suffixonthemodelnumberisindicativeofthephotodiodechipbeingisolatedfromthepackagebyanadditionalpinconnectedtothecase.¶Formechanicaldrawingspleaserefertopages61thru73.*Non-condensingtemperatureandstoragerange,Non-condensingenvironment.
«Minimumorderquantitiesapply
Mod
el N
um
ber
Active Area
Pea
k
Res
pon
sivi
tyW
avel
ength
Responsivityat λp
Capacitance(pF)
DarkCurrent (nA)
NEP(W/Hz)
ReverseVoltage
(V)
RiseTime(ns)
Temp.*Range(˚C)
PackageStyle ¶
Are
a (m
m2)
Dim
ensi
ons
(mm
)
λp(nm) (A/W) 0 V -10 V -10 V -10V
970nm
-10V632nm50 Ω
Oper
atin
g
Sto
rage
typ. min. typ. typ. typ. typ. max. typ. max. typ.
‘D’ Series, Metal Package
PIN-020A 0.20 0.51 φ
970 0.60 0.65
4 1 0.01 0.15 2.8 e-15
30
6
-40
~ +
100
-55
~ +
125
1 / TO-18 PIN-040A 0.81 1.02 φ 8 2 0.05 0.50 6.2 e-15 8
PIN-2DI ‡ 1.1 0.81 x 1.37 25 5 0.10 1.0 8.7 e-15
10 4 / TO-18
PIN-3CDI3.2 1.27 x
2.54 45 12 0.15 2 1.1 e-14PIN-3CD 7 / TO-18
PIN-5DI5.1 2.54 φ 85 15 0.25 3 1.4 e-14 12
2 / TO-5
PIN-5D 5 / TO-5
PIN-13DI13 3.6 sq 225 40 0.35 6 1.6 e-14 14
2 / TO-5
PIN-13D 5 / TO-5
PIN-6DI16.4 4.57 φ 330 60 0.5 10 1.9 e-14 17
3 / TO-8
PIN-6D 6 / TO-8
PIN-44DI44 6.6 sq 700 130 1 15 2.8 e-14 24
3 / TO-8
PIN-44D 6 / TO-8
PIN-10DI100 11.28 φ 1500 300 2 25 3.9 e-14 43
-10
~
+60
-20
~
+70
10/ Lo-Prof
PIN-10D 11 / BNC
PIN-25D 613 27.9 φ 9500 1800 15 1000 1.1 e-13 250 12 / BNC
‘O’ Series, Metal Package
OSD1-0 1 1.0 sq
900 0.47 0.54
12 3 1 3 4.5 e-14
50
10
-25
~ +
75
-40
~ +
100
7 / TO-18
OSD5-0 5 2.5 φ 50 8 5 10 1.0 e-13 8 5 / TO-5
OSD15-0 15 3.8 sq 150 20 8 15 1.3 e-13 9 5 / TO-5
OSD60-0 58 7.6 sq 600 75 15 50 1.7 e-13 14 69 / TO-8
OSD100-0A 100 11.3 φ 1000 130 30 70 2.5 e-13 19 55 /Special
‘D’ Series, Plastic Package
PIN-220D« 200 10 x 20 970 0.60 0.65 3200 600 5 100 6.2 e-14 30 75
-10
~
+60
20 ~
+
70 27 / Plastic
15World Class Products - Light Sensing Solutions
Photovoltaic SeriesPlanar Diffused Silicon Photodiodes
FEATURES •UltraLowNoise •HighShuntResistance •WideDynamicRange •BlueEnhanced
APPLICATIONS •Colorimeters •Photometers •SpectroscopyEquipment •Fluorescence
The Photovoltaic Detector series is utilized for applicationsrequiring high sensitivity andmoderate response speeds,with an
additionalsensitivityinthevisible-blueregionfortheblueenhanced
series.Thespectralresponserangesfrom350to1100nm,making
the regular photovoltaic devices ideal for visible and near IR
applications. For additional sensitivity in the 350 nm to 550 nm
region,theblueenhanceddevicesaremoresuitable.
These detectors have high shunt resistance and low noise, and
exhibit long term stability. Unbiased operation of these detectors
offers stability under wide temperature variations in DC or low
speedapplications.Forhigh light levels (greater than10mW/cm2),
the Photoconductive Series detectors should be considered for
betterlinearity.
These detectors are not designed to be reverse biased! Veryslightimprovementinresponsetimemaybeobtainedwithaslight
bias. Applying a reverse bias of more than a few volts (>3V) will
permanently damage the detectors. If faster response times are
required,thePhotoconductiveSeriesshouldbeconsidered.
Refer to the Photovoltaic Mode (PV) paragraph in the “Photodiode Characteristics” section of this catalog for detailed information on electronics set up.
Typical Spectral Response Typical Shunt Resistance vs. Temperature
16
Photovoltaic SeriesTypical Electro-Optical Specifications at TA=23ºC
‡The“I”suffixonthemodelnumberisindicativeofthephotodiodechipbeingisolatedfromthepackagebyanadditionalpinconnectedtothecase.Formechanicaldrawingspleaserefertopages61thru73.†OperatingTemperature:-40to+100ºC,StorageTemperature:-55to+125ºC.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.
Mod
el N
um
ber
Active Area
Pea
k
Res
pon
sivi
tyW
avel
ength
Responsivityat λp
Capacitance(pF)
ShuntResistance
(GΩ)
NEP(W/Hz)
RiseTime(ns)
Temp.*Range(˚C)
PackageStyle ¶
Are
a (m
m2)
Dim
ensi
ons
(mm
)λp
(nm) (A/W) 0 V -10 mV 0V970 nm
0 V632 nm
50 Ω
Oper
atin
g
Sto
rage
typ. min. typ. max. min. typ. typ. typ.
‘DP’ Series, Metal PackageCD-1705 0.88 0.93 sq 850
0.55 0.60
70
1.0 10 2.1 e-15
2000
-40
~ +
100
-55
~ +
125
68 / Plastic
PIN-2DPI ‡ 1.1 0.81 x 1.37
970
15030
4 / TO-18
PIN-125DPL 1.6 1.27 sq. 160 8 / TO-18
PIN-3CDPI3.2 1.27 x 2.54 320 0.5 5.0 3.0 e-15 50
4 / TO-18
PIN-3CDP 7 / TO-18
PIN-5DPI5.1 2.54 φ 500 0.4 4.0 3.4 e-15 60
2 / TO-5
PIN-5DP 5 / TO-5
PIN-13DPI13 3.6 sq 1200 0.35 3.5 3.6 e-15 150
2 / TO-5
PIN-13DP 5 / TO-5
PIN-6DPI16.4 4.57 φ 2000 0.2 2.0 3.9 e-15 220
3 / TO-8
PIN-6DP 6 / TO-8
PIN-44DPI44 6.6 sq 4300 0.1 1.0 4.8 e-15 475
3 / TO-8
PIN-44DP 6 / TO-8
PIN-10DPI100 11.28 φ 9800 0.05 0.2 6.8 e-15 1000
-10
~ +
60
-20
~ +
70 10/ Lo-Prof
PIN-10DP 11 / BNC
PIN-25DP 613 27.9 φ 60000 0.002 0.1 3.0 e-14 6600 12 / BNC
‘DP’ Series, Plastic Package §
PIN-220DP 200 10 x 20 970 0.55 0.60 20000 0.02 0.2 1.2 e-14 2200 -10 ~ +60
-20 ~ +70 27 / Plastic
Super Blue Enhanced ‘DP/SB’ Series, (All Specifications @ λ= 410 nm. VBIAS= 0V, RL= 50Ω)
Model No.
ActiveArea/Dimensions
Responsivity(A/W)
Capacitance(pF)
Rsh(MΩ)
NEP (W/√Hz)
Operating Current(mA)
Rise Time(µs)
-10
~ +
60
-20
~ +
70
PackageStyle ¶
mm2 mm min. typ. typ. min. typ. max. typ.
PIN-040DP/SB 0.81 1.02 φ
0.15 0.20
60 600 2.0 e-14 0.5 0.02 1 / TO-18
PIN-5DP/SB † 5.1 2.54 φ 450 150 5.2 e-14 2.0 0.2 5 / TO-5
PIN-10DP/SB100 11.28 φ 8800 10 2.0 e-13 10.0 2.0
11 / BNC
PIN-10DPI/SB 10 / Metal
PIN-220DP/SB 200 10 x 20 17000 5 2.9 e-13 10.0 4.0 27 / Plastic
‘5T’ Series, Blue
Model No.
ActiveArea/Dimensions
Responsivity(A/W) 436nm
Capacitance(pF) 0V
Rsh(MΩ)
NEP (W/√Hz)
Dark Current(nA)
Rise Time(µs)
-25
~ +
75
-45
~ +
100
PackageStyle ¶
mm2 mm min. typ. max min. typ. max. typ.
OSD1-5T 1.0 1.0 sq
0.18 0.21
35 250 2.5 e-14 1.0 7 7 / TO-18
OSD3-5T 3.0 2.5 x 1.2 80 100 3.0 e-14 2.0 9 7 / TO-18
OSD5-5T 5.0 2.5 φ 130 100 3.3 e-14 2.0 9 5 / TO-5
OSD15-5T 15.0 3.8 sq 390 50 5.6 e-14 10.0 12 5 / TO-5
OSD60-5T 62.0 7.9 sq 1800 3 2.1 e-13 25.0 30 69 / TO-8
OSD100-5TA 100.0 11.3 φ 2500 2 2.5 e-13 30.0 45 55 / Special
17World Class Products - Light Sensing Solutions
UV Enhanced SeriesInversion Layer and Planar Diffused Silicon Photodiodes
FEATURES •Inversionseries: 100%InternalQE •UltraHighRSH
•PlanarDiffusedSeries: IRSuppressed HighSpeedResponse HighStability •ExcellentUVresponse
APPLICATIONS •PollutionMonitoring •MedicalInstrumentation •UVExposureMeters •Spectroscopy •WaterPurification •Fluorescence
OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the UV region of electromagnetic spectrum.
Inversion layer structure UV enhanced photodiodes exhibit 100% internal
quantumefficiencyandarewellsuitedforlowintensitylightmeasurements.
They have high shunt resistance, low noise and high breakdown voltages.
Theresponseuniformityacrossthesurfaceandquantumefficiencyimproves
with5to10voltsappliedreversebias.Inphotovoltaicmode(unbiased),the
capacitance is higher than diffused devices but decreases rapidly with an
appliedreversebias.Photocurrentnon-linearitysetsinatlowerphotocurrents
forinversionlayerdevicescomparedtothediffusedones.Below700nm,their
responsivitiesvarylittlewithtemperature.
Planar diffused structure UV enhanced photodiodes show significant
advantages over inversion layer devices, such as lower capacitance and
higher response time.Thesedevicesexhibit linearity ofphotocurrent up to
higher light input power compared to inversion layer devices. They have
relativelylowerresponsivitiesandquantumefficienciescomparedtoinversion
layerdevices
There are two types of planar diffused UV enhanced photodiodes
available:UVDQandUVEQ.Bothserieshavealmostsimilarelectro-optical
characteristics,except in theUVEQseries,where thenear IR responsesof
thedevicesaresuppressed.Thisisespeciallydesirableifblockingthenear
IRregionofthespectrumisnecessary.UVDQdevicespeakat970nmand
UVEQdevicesat720nm (seegraph).Bothseriesmaybebiased for lower
capacitance, faster response and wider dynamic range. Or they may be
operated in thephotovoltaic (unbiased)mode forapplications requiring low
drift with temperature variations. The UVEQ devices have a higher shunt
resistance than their counterparts of UVDQ devices, but have a higher
capacitance.
ThesedetectorsareidealforcouplingtoanOP-AMPinthecurrent
modeconfigurationasshown.
18
Inversion Layer UV Enhanced PhotodiodesTypical Electro-Optical Specifications at TA=23ºC
‡The‘L’suffixonthemodelnumberisindicativeofthephotodiodechipbeingisolatedfromthepackagebyanadditionalpinconnectedtothecase.§Thephotodiodechipsin“FIL”seriesareisolatedinalowprofileplasticpackage.Theyhavealargefieldofviewaswellasinlinepins.¶Formechanicaldrawingspleaserefertopages61thru73.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.
«Minimumorderquantitiesapply
Mod
el N
um
ber
Active Area Responsivity(A/W)
Capacitance(pF)
ShuntResistance
(MΩ)
NEP(W/Hz) Reverse
Voltage(V)
RiseTime(μs)
OperatingCurrent(mA)
Temp.*Range(˚C)
PackageStyle ¶
Are
a (m
m2)
Dim
ensi
ons
(mm
) 254 nm 0 V -10 mV 0V254 nm
0 V254 nm
50 Ω0 V
Oper
atin
g
Sto
rage
min. typ. max. min. typ. typ. max. typ. typ.
‘UV Enhanced’ Series, Inversion Layer, Metal PackageUV-001« 0.8 1.0 φ
0.09 0.14
60 250 500 6.4 e-14
5
0.2
0.1
-20
~ +
60
-55
~ +
80 5 / TO-5UV-005 5.1 2.54 φ 300 80 200 1.0 e-13 0.9
UV-015 15 3.05 x 3.81 800 30 100 1.4 e-13 2.0
UV-20 20 5.08 φ 1000 25 50 2.0 e-13 2.06 / TO-8
UV-35 35 6.60 x 5.33 1600 20 30 1.7 e-13 3.0
UV-5050 7.87 φ 2500 10 20 2.6 e-13 3.5
-10
~ +
60
-20
~ +
70
11 / BNC
UV-50L ‡ 10 / Lo-Prof
UV-100100 11.28 φ 4500 5 10 4.5 e-13 5.9
11 / BNC
UV-100L 10 / Lo-Prof
‘UV Enhanced’ Series, Inversion Layer, Plastic Package §
UV-35P 35 6.60 x 5.33
0.09 0.14
1600 15 30 1.7 e-13
5
3.0
0.1
-10
~ +
60
-20
~ +
70 25 / Plastic
FIL-UV50 50 7.87 φ 2500 10 20 2.1 e-13 3.5 15 / Plastic
Typical Shunt Resistance vs. Temperature Typical Spectral Response
19World Class Products - Light Sensing Solutions
Planar Diffused UV Enhanced PhotodiodesTypical Electro-Optical Specifications at TA=23ºC
¶Formechanicalspecificationspleaserefertopages61thru73.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.
LEFT
Typ. Responsivity with Quartz Window (TA= 25˚C)
Mod
el N
um
ber
Active Area
PeakWavelength
λ P (nm)
Responsivity(A/W)
Capacitance(pF)
ShuntResistance
(GOhm)
NEP(W/Hz)
ReverseVoltage
(V)
RiseTime(μs)
Temp.*Range(˚C)
PackageStyle ¶
Are
a (m
m2)
Dim
ensi
ons
(mm
)
200nm
633nm Peak 0 V -10 mV 0V
200 nm
0 V1kOhm
Op
era
tin
g
Sto
rag
e
typ. typ. typ. typ. min. typ. typ. max. typ.
UV-005DQ 5.7 2.4 x 2.4
980 0.12 0.33 0.5
65 0.3 1 3.6 E-14
5
0.2
-20
~ +
60
-55
~ +
80
5 / TO-5
UV-013DQ 13 3.6 x 3.6 150 0.2 0.8 4.1 E-14 0.5 5 / TO-5
UV-035DQ 34 5.8 x 5.8 380 0.1 0.4 5.8 E-14 1 6 / TO-8
UV-100DQ 100 10 X 10 1100 0.04 0.2 8.2 E-14 3 11 /BNC
UV-005DQC 5.7 2.4 x 2.4
980 0.12 0.33 0.5
65 0.3 1 3.6 E-14
5
0.2
-20
~ +
60
-20
~ +
80
25 /CeramicUV-035DQC 34 5.8 x 5.8 380 0.1 0.4 5.8 E-14 1
UV-100DQC 100 10 X 10 1100 0.04 0.2 8.2 E-14 3
UV-005EQ 5.7 2.4 x 2.4
720 0.12 0.34 0.36
140 2 20 8.2 E-15
5
0.5
-20
~ +
60
-55
~ +
80
5 / TO-5
UV-013EQ 13 3.6 x 3.6 280 1 10 1.1 E -14 1 5 / TO-5
UV-035EQ 34 5.8 x 5.8 800 0.5 5 1.6 E -14 2 6 / TO-8
UV-100EQ 100 10 X 10 2500 0.2 2 2.6 E -14 7 11 /BNC
UV-005EQC 5.7 2.4 x 2.4
720 0.12 0.34 0.36
140 2 20 8.2E-15
5
0.5
-20
~ +
60
-20
~ +
80
25 /CeramicUV-035EQC 34 5.8 x 5.8 800 0.5 5 1.6 E-14 2
UV-100EQC 100 10 X 10 2500 0.2 2 2.6E -14 7
‘UV-DQC’ Series Planar Diffused, Ceramic Package, Quartz Window
‘UV-EQ’ Series Planar Diffused, Metal Package, Quartz Window
‘UV-EQC’ Series Planar Diffused, Ceramic Package, Quartz Window
‘UV-DQ’ Series Planar Diffused, Metal Package, Quartz Window
0 1 2 3 4 5
24
20
16
12
8 4
0
Typ. Capacitance vs. Reverse Bias (TA= 23˚C, f=1MHz)
UV-EQ Series
UV-EQ SeriesUV-DQ Series
UV-DQ Series
20
High Speed Silicon PhotodiodesHigh Speed Silicon Series
FEATURES •LowDarkCurrent •LowCapacitance •TO-46Package •w/LensedCap •SubnsResponse
APPLICATIONS •VideoSystems •ComputersandPeripherals •IndustrialControl •GuidanceSystems •LaserMonitoring
OSI Optoelectronics High Speed Silicon series aresmallareadevicesoptimized for
fastresponsetimeorHighbandwithapplications.The BPX-65complementstherestof
thehighspeedgroupwithanindustrystandard.
Thespectralrangeforthesedevicesgoesfrom350nmto1100nm.Theresponsivityand
responsetimeareoptimizedsuchthattheHRseriesexhibitapeakresponsivityof0.50
A/Wat800nmandtypicalresponsetimesofafewhundredpicosecondsat-5V.
Note that for all high-speed photodetectors, a reverse bias is required to achieve the
fastestresponsetimes.However,thereversebiasshouldbelimitedtomaximumreverse
voltage specified to avoid damage to the detector. Output signals can be measured
directlywithanoscilloscopeorcoupledtohighfrequencyamplifiersasshowninfigure
10ofthePhotodiodeCharacteristicssectionofthecatalog.AllpartsintheHigh-Speed
siliconseriesareavailablewithaflatwindoworballlens(L).
Typical Capacitance vs. Reverse Bias
Typical Capacitance vs. Reverse Bias
Typical Frequency Response vs. Reverse Bias
Typical Frequency Response vs. Reverse Bias
21World Class Products - Light Sensing Solutions
High Speed Silicon SeriesTypical Electro-Optical Specifications at TA=23ºC
¶Formechanicaldrawing,pleaserefertopages61thru73.*ResponsivitiesaremeasuredforFlatwindowdevices.L-ReferstodeviceswithaBall-typelenscap.Chipcenteringiswithin+/-0.005”withrespecttoODoftheHeader.**Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.
Mod
el N
um
ber
Active Area
Pea
k W
avel
ength
(nm
)
Responsivity(A/W)
Capacitance(pF) ‡
Dark Current(nA) ‡
NEP(W/Hz) Reverse
Voltage(V)
RiseTime(ns)
Temp.**Range(˚C)
PackageStyle ¶
Are
a (m
m2)
Dim
ensi
ons
(mm
)
830nm 830 nm 830 nm
50 Ω
Oper
atin
g
Sto
rage
min. typ. typ. typ. typ. max. typ.
High Responsivity Series (VBIAS=-5 V)
PIN-HR005PIN-HR005L* 0.01 0.127 φ
800 0.45* 0.50*
0.8 0.03 0.8 5.0 e-15
15
0.60
-25
~ +
85
-40
~ +
100
9 / TO-1816 / TO-18
(L - BallLens Cap)
PIN-HR008PIN-HR008L* 0.03 0.203 sq 0.8 0.03 0.8 5.0 e-15 0.60
PIN-HR020PIN-HR020L* 0.20 0.508 φ 1.8 0.06 1.0 7.1 e-15 0.80
PIN-HR026PIN-HR026L* 0.34 0.660 φ 2.6 0.1 1.5 1.0 e-14 0.90
PIN-HR040PIN-HR040L* 0.77 0.991 φ 4.9 0.3 2.0 1.9 e-14 1.0
BPX-65 (VBIAS=-20 V)
BPX-65 1.0 1.0 sq 900 0.45 0.5 3.0 0.5 5.0 2.3 e-14 50 2.0 7 / TO-18
max.
Typical Spectral Response Typical Spectral Response
22
Soft X-Ray, Deep UV Enhanced SeriesInversion Layer Silicon Photodiodes
FEATURES •DirectDetection •NoBiasNeeded •HighQuantumEfficiency •LowNoise •HighVacuumCompatible •CryogenicallyCompatible •0.070nmto1100nm WavelengthRange
APPLICATIONS •ElectronDetection •MedicalInstrumentation •Dosimetry •RadiationMonitoring •X-raySpectroscopy •ChargedParticleDetection
OSI Optoelectronics’ 1990 R&D 100 award winning X-UV detector seriesareauniqueclassofsiliconphotodiodesdesignedforadditionalsensitivityintheX-Ray
region of the electromagnetic spectrumwithout use of any scintillator crystals or
screens.Overawiderangeofsensitivityfrom200nmto0.07nm(6eVto17,600eV),
oneelectron-holepair iscreatedper3.63eVof incidentenergywhichcorresponds
toextremelyhighstablequantumefficienciespredictedbyE(ph)/3.63eV(Seegraph
below).Formeasurementof radiationenergiesabove17.6keV, refer to the “Fully
DepletedHighSpeedandHighEnergyRadiationDetectors”section.
A reverse bias can be applied to reduce the capacitance and increase speed of
response. In the unbiased mode, these detectors can be used for applications
requiring low noise and low drift. These detectors are also excellent choices for
detectinglightwavelengthsbetween350to1100nm.
Thedetectorscanbecoupledtoachargesensitivepreamplifierorlow-noiseop-amp
asshowninthecircuitontheoppositepage.
Typical Quantum Efficiency
Soft X-Ray, Deep UV Enhanced PhotodiodesTypical Electro-Optical Specifications at TA=23ºC
23World Class Products - Light Sensing Solutions
Circuit example In this circuit example, the pre-amplifier is a FET input op-amp or acommercialchargesensitivepreamplifier.Theycanbefollowedbyoneormore amplification stages, if necessary. The counting efficiency isdirectly proportional to the incident radiation power. The reverse biasvoltagemust be selected so that the best signal-to-noise ratio isachieved. Forlownoiseapplications,allcomponentsshouldbeenclosedinametalbox.Also,thebiassupplyshouldbeeithersimplebatteriesoraverylowrippleDCsupply.
Amplifier: OPA-637,OPA-27orsimilarRF: 10MΩto10GΩ RS: 1MΩ;SmallerforHighCountingRatesCF: 1pFCD: 1pFto10µF
OUTPUT VOUT = Q / CF WhereQistheChargeCreatedByOnePhotonorOneParticle
¶Formechanicaldrawingspleaserefertopages61thru73.AllXUVdevicesaresuppliedwithremovablewindows.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.
Mod
el N
um
ber
Active Area Capacitance(nF)
Shunt Resistance(MΩ)
NEP(W/Hz)
Temp. Range*(°C)
PackageStyle ¶
Are
a (m
m2 )
Dim
ensi
on(m
m)
0 V -10 mV 0V200 nm
Oper
atin
g
Sto
rage
typ. max. min. typ. typ. max.
‘XUV’ Series Metal Package
XUV-005 5 2.57 φ 0.3 0.5 200 2000 2.9 e -15 9.1 e -15
-20
~ +
60
-20
~ +
80
22 / TO-5
XUV-020 20 5.00 φ 1.2 1.6 50 500 5.8 e -15 1.8 e -14
23 / TO-8XUV-035 35 6.78 x 5.59 2 3 30 300 7.4 e -15 2.3 e -14
XUV-100 100 11.33 φ 6 8 10 100 7.4 e -15 4.1 e -14 28 / BNC
‘XUV’ Series Ceramic Package
XUV-50C 50 8.02 φ 2 3 20 200 9.1 e -15 2.9 e -14
-20
~ +
60
-20
~ +
80
25 / Ceramic
XUV-100C100 10.00 sq 6 8 10 100 1.3 e -14 4.1 e -14 25 / Ceramic
24
High Breakdown Voltage, Fully Depleted SeriesLarge Active Area Photodiodes
FEATURES Large Active Area High Speed Detectors •LargeActiveArea •FullyDepleteable •FastResponse •UltraLowDarkCurrent •LowCapacitance
Large Active Area Radiation Detectors •LargeActiveArea •ScintillatorMountable •FullyDepleteable •UltraLowDarkCurrent •LowCapacitance •HighBreakdownVoltage
APPLICATIONS Large Active Area High Speed Detectors •LaserGuidedMissiles •LaserWarning •LaserRangeFinder •LaserAlignment •ControlSystems
Large Active Area Radiation Detectors •ElectronDetection •MedicalInstrumentation •HighEnergySpectroscopy •ChargedParticleDetection •HighEnergyPhysics •NuclearPhysics
Direct High Energy Radiation Measurement:
Both PIN-RD100 and PIN-RD100A, can also be used without any epoxy
resinorglasswindowfordirectmeasurementofhighenergyradiationsuch
asalpharaysandheavyions.Theradiationexhibitslossofenergyalonga
linearlinedeepintothesiliconafterincidentontheactivearea.
The amount of loss and the penetration depth is determined by the type
andmagnitudeoftheradiation.Inordertomeasurecompletelytheamount
ofradiation,thedepletionlayershouldbedeepenoughtocoverthewhole
track from the incident point to the stop point. This requires a high bias
applicationtofullydepletethedetector.Inspiteofthelargeactiveareaas
well ashighbias voltageapplications, thedevicesexhibit super lowdark
currents,lowcapacitancesandlowseriesresistances.
TheLargeActiveAreaHighSpeedDetectorscanbefullydepletedtoachieve
thelowestpossiblejunctioncapacitanceforfastresponsetimes.Theymay
beoperatedatahigherreversevoltage,uptothemaximumallowablevalue,
forachievingevenfasterresponsetimesinnanoseconds.Thehighreverse
biasat thispoint, increases theeffectiveelectric fieldacross the junction,
hence increasing the charge collection time in the depleted region. Note
that this isachievedwithout thesacrifice for thehigh responsivityaswell
asactivearea.
The Large Active AreaRadiationDetectors can also be fully depleted for
applicationsmeasuring high energyX-rays,-rays aswell as high energy
particles such as electrons, alpha rays and heavy ions. These types of
radiationcanbemeasuredwithtwodifferentmethods.Indirectanddirect.
Indirect High Energy Radiation Measurement:
In this method, the detectors are coupled to a scintillator crystal for
convertinghighenergy radiation intoadetectablevisiblewavelength.The
devices aremounted on a ceramic and covered with a clear layer of an
epoxyresinforanexcellentopticalcouplingtothescintillator.Thismethod
iswidelyusedindetectionofhighenergygammaraysandelectrons.Thisis
wheretheX-UVdevicesfailtomeasureenergieshigherthan17.6keV.The
typeandsizeofthescintillatorcanbeselectedbasedonradiationtypeand
magnitude.
Inadditiontotheiruseinhighenergyparticledetection,thePIN-RD100and
PIN-RD100Aarealsoexcellentchoicesfordetectionintherangebetween
350to1100nminapplicationswherealargeactiveareaandhighspeedis
desired.
These detectors can be coupled to a charge sensitive preamplifier or
lownoise op-amp as shown in the opposite page. The configuration for
indirectmeasurementisalsoshownwithascintillatorcrystal.
Typical Capacitance vs. Reverse Bias Voltage Typical Spectral Response
25World Class Products - Light Sensing Solutions
Fully Depleted PhotodiodesTypical Electro-Optical Specifications at TA=23ºC
DIRECT DETECTIONFor direct detection of high-energyparticles, the pre-amplifier is a FETinput op-amp, followed by oneor more amplification stages, ifnecessary, or a commercial chargesensitivepreamplifier. Thecountingefficiency is directly proportionalto the incident radiation power.The reverse bias voltage must beselectedassuchtoachievethebestsignal-to-noise ratio. For low noiseapplications, all components shouldbeenclosedinametalbox.Also,thebias supply should be either simplebatteries or a very low ripple DCsupply.Thedetectorshouldalsobeoperatedinthephotovoltaicmode.
Amplifier: OPA-637,OPA-27orsimilarRF: 10MΩto10GΩ RS: 1MΩ;SmallerforHighCountingRatesCF: 1pFCD: 1pFto10µF
OUTPUT VOUT = Q / CF WhereQ is theChargeCreatedByOnePhotonorOneParticle
OSD-35-LR’sceramicpackagescomewithoutwindow,insteadtheopticallyclearepoxyisused.†MeasuredatVbias=-50V¶Formechanicaldrawingspleaserefertopages61thru73.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.
INDIRECT DETECTION (WITH SCINTILLATOR CRYSTAL) The circuit is very similar to the direct detectioncircuit except that the photodiode is coupled toa scintillator. The scintillator converts the high-energy X-rays and/or X-rays into visible light.Suitable scintillators include CsI(TL), CdWO4,BGO and NaI(TL). The amplifier should be aFET input op-amp, followed by one or moreamplification stages, or a commercial chargesensitivepreamplifier.Theoutputvoltagedependsprimarilyonthescintillatorefficiencyandshouldbecalibratedbyusingradioactivesources.
Mod
el N
um
ber
Active Area
Pea
k R
espon
sivi
tyW
avel
ength
(nm
)
Responsivity900 nm
Capacitance(pF)
ShuntResistance
(GΩ)
NEP(W/√Hz)
RiseTime(ns)
Temp.*Range(˚C)
PackageStyle ¶
Are
a (m
m2)
Dim
ensi
ons
(mm
) A/W 0 V -10 V 900 nm0 V
632nm50Ω
Oper
atin
g
Sto
rage
typ. typ. min. typ. typ. typ.
OSD35-LR Series
OSD35-LR-A 34.2 5.8 x 5.9 830 0.54 1300 2 3 5.6 e-15 ---
-25
~+
75
-45
~ +
100
25 / Ceramic
OSD35-LR-D 34.2 5.8 x 5.9 830 0.54 1300 0.1 0.3 1.8 e-14 ---
Mod
el N
um
ber
Active Area
Pea
k R
espon
sivi
tyW
avel
ength
(nm
)
Responsivity(A/W)
Dep
leti
onV
olta
ge
Dark Current(nA)
Capacitance(pF)
Rise Time(ns)
NEP(W/√Hz)
ReverseVoltage
(V)
Temp.*Range(˚C)
PackageStyle ¶
Are
a (m
m2)
Dim
ensi
ons
(mm
) 900 nm V -100 V -100 V900 nm-100 V50Ω
900nm-100V 10 µA
Oper
atin
g
Sto
rage
typ. typ. typ. max. typ. max. typ. typ. max.
Large Active Area, High Speed
PIN-RD07 7.1 3.00 φ900
0.55 48 0.2 5.0 8.0 9.0 1.5 1.2 e-14 135
-40 ~
+10
0
-55 ~
+12
5
26 / TO-8PIN-RD15 14.9 4.35 φ 0.58 55 1.0 30 14 16 3.0 2.5 e-14 140
PIN-RD100 100 10 Sq950 0.60
75 2 10 50 60 40 3.2 e-14 120
-20 ~
+60 -20 ~
+80 25 /
CeramicPIN-RD100A 100 10 Sq 35 2 † 10 † 40 † 45 † 6 3.4 e-14 70
26
Multi-Channel X-Ray Detector SeriesScintillator Compatible Photodiode Arrays
FEATURES •ScintillatorPlatform •5VoltBias •Channelspacingvariety
APPLICATIONS •PositionSensors •Multi-channelGammacounting •X-raySecuritySystems
This series consists of 16-element arrays: the individualelementsare
groupedtogetherandmountedonPCB.
ForX-rayorGamma-rayapplication, thesemulti-channeldetectorsoffer
scintillator-mountingoptions:BGO, CdWO4 or CsI(TI).
BGO (BismuthGermanate)actsasan idealenergyabsorber: it iswidely
acceptedinhigh-energydetectionapplications.
CdWO4(CadmiumTungstate)exhibitssufficientlyhighlightoutput,helping
improveSpectrometryresults.
CsI(CesiumIodide)isanotherhighenergyabsorber,providingadequate
resistanceagainstmechanicalshockandthermalstress.
When coupled to scintillator, these Si arrays map any medium or high
radiationenergyovertovisiblespectrumviascatteringeffect.Also,their
specially designed PCB allows end-to-end connectivity. Multiple arrays
canbedeployedinsituationthatcallsforlargerscaleassembly.
Multi-Channel X-Ray Detector SeriesTypical Electro-Optical Specifications at TA=23ºC
27World Class Products - Light Sensing Solutions
Mod
el N
um
ber
Num
ber
of
Elem
ents
Active AreaPer Element
Pit
ch (
mm
) Responsivity(A/W)
DarkCurrent
(pA)
TerminalCapacitance
(pF)
Rise Time(μs)
ReverseBias(V)
NEP(W/√Hz)
Temp.Range(°C)
540 nm
930 nm -10 mV 0V, 10 KHz 0V, 1KΩ -10mV
930nm
Oper
atin
g
Sto
rage
Area (mm2)
Dimensions(mm) typ. typ. typ. typ. typ. max. typ.
Photoconductive Arrays
A2C-16-1.57 16 2.35 2.00 x 1.18 1.57 0.31 0.59 5 28 0.1 5 5.30 e-15
-10
~
+60
-20
~
+70
CATHODE
(25.0 P.D. ARRAY)8 x 2.54 = 20.32
2 4 6 8 10 12 14 16
1 3 5 7 9 11 13 15
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
1.175
25.4+0.0-0.3
(1.575)
15.24±0.1
2.0 X 45˚MARK
2.0 (4.2 P.D. ARRAY)
15 x 1.575 = 23.625
20.0±0.2
0.6±0.11.0±0.15
A2C-16-1.57
3.5±0.5
18X ø0.45
CATHODE
Mechanical Specifications (All units in mm)
28
YAG SeriesNd:YAG Optimized Photodetectors
FEATURES •Nd:YAGSensitivity •HighBreakdownVoltage •LargeArea •HighSpeed •HighAccuracy
APPLICATIONS •Nd:YAGPointing •LaserPointing&Positioning •PositionMeasurement •SurfaceProfiling •GuidanceSystems
¶Formechanicaldrawingspleaserefertopages61thru73.**Specificationsareperelement
Cap
acita
nce
Mod
el N
um
ber
Active Area
Pea
k
Res
pon
sivi
tyW
avel
ength
Responsivity(A/W)
Elem
ent
Gap
DarkCurrent
(nA)
Capacitance(pF)
Rise Time(ns)
NEP(W/√Hz)
Reverse Voltage
(V)
Temp.*Range(˚C)
PackageStyle ¶
Are
a (m
m2)
Dim
ensi
ons
(mm
) λpnm
1000nm-180V
mm -180 V -180 V1064 nm-180 V50 Ω
1064 nm-180 V
100 µA
Oper
atio
ng
Sto
rage
1 µA*
typ. typ. typ. typ. max. typ. max. typ. typ. max.
Nd: YAG Optimized Single ElementPIN-5-YAG 5.1 2.54 φ
1000 0.6 -50 - 5 - 18 1.2 e-14
200
-40
~+
100
-55
~+
125
2 / T0-5
PIN-100-YAG 100 11.28 φ 75 1000 25 - 30 2.5 e-14 20 / Metal
Nd: YAG Optimized Quadrant Photodetectors**SPOT-9-YAG 19.6 10 φ
1000
0.40.1 35 250 5 1 18 3.2 e-14
200
-20
~+
60
-20
~+
80 20 / Metal
SPOT-11-YAG FL 26 11.5 φ 0.13 25 100 12 - 15 3.4 e-14 29 / Metal
SPOT-13-YAG-FL 33.7 13.1 φ 0.4 0.13 30 200 15 - 15 -300
-55
~
+12
5C
-55
~
+12
5C 29 / Metal
SPOT-15-YAG 38.5 14.0 φ 0.6 0.2 1000 3000 15 30 36 - 20 / Metal
TheYAG Series of photo detectors are optimized for high response at 1060 nm, theYAG
laser lightwavelength,andlowcapacitance,forhighspeedoperationandlownoise.These
detectorscanbeusedforsensinglowlightintensities,suchasthelightreflectedfromobjects
illuminated by a YAG laser beam for ranging applications. The SPOT Series of quadrantdetectorsarewellsuitedforaimingandpointingapplications.TheseareallNonPdevices.
These detectors can be used in the photovoltaic mode, for low speed applications requiring low noise, or in the photoconductive mode, with an applied reverse bias, for high speed applications.
Cap
acita
nce
Typical Spectral Response Typical Capacitance vs. Bias Voltage
29World Class Products - Together We Perform
Photops™Photodiode-Amplifier Hybrids
FEATURES •Detector/AmplifierCombined •AdjustableGain/Bandwidth •LowNoise •WideBandwidth •DIPPackage •LargeActiveArea
APPLICATIONS •GeneralPurposeLightDetection •LaserPowerMonitoring •MedicalAnalysis •LaserCommunications •BarCodeReaders •IndustrialControlSensors •PollutionMonitoring •GuidanceSystems •Colorimeter
The Photop™ Series,combinesaphotodiodewithanoperationalamplifierinthesame
package.Photops™general-purposedetectorshaveaspectralrangefromeither350
nmto1100nmor200nmto1100nm.Theyhaveanintegratedpackageensuringlow
noiseoutput under a varietyof operatingconditions.Theseop-ampsare specifically
selectedbyOSIOptoelectronicsengineersforcompatibilitytoourphotodiodes.Among
manyofthesespecificparametersarelownoise,lowdriftandcapabilityofsupporting
avarietyofgainsandbandwidthsdeterminedby theexternal feedbackcomponents.
OperationfromDCleveltoseveralMHzispossibleinaneitherunbiasedconfiguration
forlowspeed,lowdriftapplicationsorbiasedforfasterresponsetime.
Any modification of the above devices is possible. The modifications can be simply adding a bandpass optical filter, integration of additional chip (hybrid) components inside the same package, utilizing a different op-amp, photodetector replacement, modified package design and / or mount on PCB or ceramic.
Typical Spectral Response
Typical Responsivity vs. Frequency Typical Gain vs. Frequency
For your specific requirements, contact one of our Applications Engineers.
30
Photops™ (Photodiode Specifications)Typical Electro-Optical Specifications at TA=23ºC
¶Formechanicaldrawingspleaserefertopages61thru73.**LN–SeriesDevicesaretobeusedwitha0VBias.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.#OSI-515replacesUDT-455HS
Mod
el N
um
ber
Active Area Responsivity(A/W)
Capacitance(pF)
Dark Current
(nA) Shunt
Res
ista
nce
(MΩ
) NEP(W/√Hz)
Rev
erse
V
olta
ge Temp.*
Range(°C)
Package Style
Are
a
(mm
2)
Dim
ensi
on(m
m)
254 nm 970 nm 0 V -10 V -10 V -10
mV0 V
254 nm-10 V
970 nm V
Oper
atin
g
Sto
rage
min
.
typ.
min
.
typ.
typ.
typ.
typ.
max
.
typ.
typ.
typ.
max
.
350-1100 nm Spectral Range
UDT-4555.1 2.54 φ
--- 0.60 0.65
85 15 0.25 3
---
1.4 e -14
30**
0 ~
+ 7
0
-30
~+
100
30 / TO-5OSI-515#
UDT-020D 16 4.57 φ 330 60 0.5 10 1.9 e -14 31 / TO-8
UDT-555D 100 11.3 φ 1500 300 2 25 3.9 e -14 32 / Special
200-1100 nm Spectral Range
UDT-455UV 5.1 2.54 φ
0.10 0.14 ---
300
---
100 9.2 e -14
--- 5**
30 / TO-5
OSI-020UV 16 4.57 φ 1000 50 1.3 e -13 31 / TO-8
UDT-055UV 50 7.98 φ 2500 20 2.1 e -13 32 / Special
UDT-555UV100 11.3 φ 4500 10 2.9 e -13 32 / Special
UDT-555UV/LN**
Operational Amplifier Specifications Electro-Optical Specifications at TA=23 °C
Mod
el N
um
ber
Supply Voltage
Quiescent Supply Current (mA)
Input Offset Voltage
Tem
p.
Coe
ffic
ient
Input
Off
set
Vol
tage
Input Bias Current
GainBandwidth
Product
Slew Rate
Open Loop
Gain, DC
Input Noise
Voltage
Input Noise
Current
100 H
z
1 k
Hz
1 k
Hz
± 15 V mV µV / °C pA MHz V / µs V /mV nV/ √Hz fA/ √Hz
min
.
typ.
max
.
typ.
max
.
typ.
max
.
typ.
max
.
typ.
max
.
min
.
typ.
min
.
typ.
min
.
typ.
typ.
typ.
typ.
UDT-455
--- ±15 ±18 2.8 5.0 0.5 3 4 30 ±80 ±400 3.0 5.4 5 9 50 200 20 15 10UDT-455UV
UDT-020D
OSI-020UV --- ±15 ±18 1.8 2 0.03 0.12 0.35 1 0.5 20 --- 5.1 --- 20 1000 2000 5.8 5.1 0.8
OSI-515* --- ±15 ±18 6.5 7.2 1 3 10 --- ±15 ±40 23 26 125 140 3 6.3 --- 12 10
UDT-555UV/LN --- ±15 ±18 2.5 3.5 0.1 0.5 ±2 ±5 ±0.8 ±2 --- 2 1 2 501 1778 15 8 0.5
UDT-055UV
--- ±15 ±22 2.7 4.0 0.4 1 3 10 ±40 ±200 3.5 5.7 7.5 11 75 220 20 15 10UDT-555D
UDT-555UV
31World Class Products - Light Sensing Solutions
UDT-455, UDT-555D, 555UV, 055UVOSI-515: pin 1 & 5 are N/C(No offset adjustment needed).
UDT-020D, OSI-020UV
UDT-555UV/LN
Photop SeriesSchematic Diagrams
Theoutputvoltageisproportionaltothelightintensityofthelightandisgivenby:
(1)
Frequency Response (Photodiode/Amplifier Combination)
The frequency response of the photodiode / amplifier combination isdetermined by the characteristics of the photodetector, pre-amplifieraswell as the feedback resistor (RF) and feedbackcapacitor (CF). Foraknown gain, (RF), the 3dB frequency response of the detector/pre-ampcombinationisgivenby:
(2)
However,thedesiredfrequencyresponseislimitedbytheGainBandwidthProduct(GBP)oftheop-amp.Inordertohaveastableoutput,thevaluesoftheRFandCFmustbechosensuchthatthe3dBfrequencyresponseofthedetector/pre-ampcombination,belessthanthemaximumfrequencyoftheop-amp,i.e.f3dB ≤fmax.
(3)
whereCAistheamplifierinputcapacitance.
Inconclusion,anexample for frequency responsecalculations, isgivenbelow. For a gain of 108, an operating frequency of 100 Hz, and anop-ampwithGBPof5MHz:
(4)
Thus,forCF=15.9pF,CJ=15pFandCA=7pF,fmax isabout14.5kHz.Hence,thecircuitisstablesincef3dB ≤fmax.
For more detailed application specific discussions and further reading,refertotheAPPLICATIONNOTESINDEXinthecatalog.
Note: The shaded boxes represent the Photop™ components and their connections. The components outside the boxes are typical
32
Temperature (°C)
BPW-34Plastic Molded - Industry Standard
FEATURES •HighReliability •HighDensityPackage •RuggedResinMold •HighSpeedandLowDarkCurrent
APPLICATIONS •IRSensors•BarCodeScanners •ColorAnalysis •SmokeDetectors
¶Formechanicaldrawingspleaserefertopages61thru73.*Non-condensingtemperatureandstoragerange,Non-condensingenvironment.
Mod
el N
um
ber
Active Area
Pea
k
Res
pon
sivi
ty
Wav
elen
gth
Responsivityatλp
Capacitance(pF)
DarkCurrent
(nA)NEP
(W/√Hz)ReverseVoltage
(V)
RiseTime(ns)
Temp*Range(°C)
Pac
kage
Sty
le ¶
Are
a (m
m2)
Dim
ensi
ons
(mm
)
λp(nm)
(A/W) 0 V1 MHz
-10 V1MHz
-10 V -10 V970 nm
-10 V830 nm
50 Ω
Oper
atin
g
Sto
rage
typ. min. typ. typ. typ. typ. max. typ. max. typ.
BPW 34 SeriesBPW-34 «
7.25 2.69 sq. 970
0.55 0.6065 12 2 30
4.2e -1440 20
-25
~+
85
-40
~+
100 19 / Plastic
MoldedBPW-34S
BPW-34B « 0.15** 0.20** 1.3e -13**
BPW-34 series are a family of high
qualityandreliabilityplasticencapsulated
photodiodes. The devices in this series,
exhibit similar electrical characteristics,
but vary in optical response. BPW-34B
has an excellent response in the blue
regionofthespectrum.They are excellent for mounting on PCB and hand held devices in harsh environments.
Temperature (°C)
Temperature (°C)
Temperature (°C)
Typical Spectral Response
Typical Dark Current vs. Temperature
Typical Capacitance vs. Reverse Bias Voltage
Typical Dark Current vs. Reverse Bias
**ResponsivityandNEPvaluesfortheBPW-34Baregivenat410nm.«Minimumorderquantitiesapply
33World Class Products - Light Sensing Solutions
PIN-08CSL-F
Plastic Encapsulated SeriesLead Frame Molded Photodiodes
FEATURES •HighDensityPackage •RuggedMoldedPackage •LowCapacitance •LowDarkCurrent •LeadFrameStandard •SMT •MoldedLensFeature •SideLookers •FilteronChip(700nmCutoff)
APPLICATIONS •BarCodeReaders •IndustrialCounters •MeasurementandControl •IRRemoteControl •ReflectiveSwitches
OSIOptoelectronicsoffersa lineofhighqualityand reliabilityplastic
encapsulated photodiodes. These molded devices are available in a
varietyofshapesandsizesofphotodetectorsandpackages,including
industrystandardT1andT13/4,flatandlensedsidelookersaswellas
asurfacemountversion(SOT-23).Theyareexcellentformountingon
PCBandhandhelddevicesinharshenvironments.
Theyhaveanexcellent response in theNIR spectrum andarealso
available with visible blocking compounds, transmitting only in the
700-1100nmrange.Theyofferfastswitchingtime,lowcapacitanceas
wellaslowdarkcurrent.Theycanbeutilizedinbothphotoconductive
andphotovoltaicmodesofoperation.
PIN-08CSL-F
PIN-08CSL-F
PIN-08CSL-F
Typical Spectral Response Typical Spectral Response
Typical Angular Detection Characteristics Typical Capacitance vs. Reverse Bias Voltage
34
Plastic Encapsulated Series «Typical Electro-Optical Specifications at TA=23ºC
¶Formechanicaldrawingspleaserefertopages61thru73.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.The“CSL-F”seriesisahomogeneoussiliconphotodiodeandopticalfiltercombinationdevice.Thefiltercoatingisdirectlydepositedontothechipduringwaferprocess.
Mod
el N
um
ber
Active Area
Spectral Range(nm)
ResponsivitylP=970nm
Capacitance(pF) 1 MHz
Dark Current (nA) Reverse
Voltage(V)
Rise Time (ns)
Temp.*Range(˚C)
PackageStyle ¶
Are
a (m
m2)
Dim
ensi
ons
(mm
) (A/W) 0 V -10 V -10 V-10 Vpeak λ50 Ω
Oper
atin
g
Sto
rage
typ. typ. typ. typ. max. max. typ.
PIN-0.81-LLS0.81 1.02 φ 350-1100
0.55
10 2 2
30
20
11
-25
~ +
85
-40
~ +
100
62 / Leadless Ceramic
PIN-0.81-CSL 60 / Resin Molded
PIN-4.0-LLS3.9 2.31x1.68 350-1100 60 10
5
62 / Leadless Ceramic
PIN-4.0-CSL 60 / Resin Molded
PIN-07-CSL8.1 2.84 Sq
350-1100
85 15 50
57 / Resin MoldedPIN-07-FSL 700-1100
PIN-07-CSLR8.1 2.84 Sq
350-110056 / Resin Molded
PIN-07-FSLR 700-1100
PIN-08-CSL-F 8.4 2.90 Sq 350-720 0.43@660nm .. 25 .. 10 75 60 / Resin Molded
PIN-8.0-LLS8.4 2.90 Sq
350-1100 0.55100 25 10
3050
62 / Leadless Ceramic
PIN-8.0-CSL60 / Resin Molded
PIN-16-CSL 16 4.00 Sq 330 55 5 100
Detector-Filter Combination SeriesPlanar Diffused Silicon Photodiodes
35World Class Products - Light Sensing Solutions
FEATURES •CIEMatch(APseries) •FlatBandResponse(DF) •254NarrowBandpass •w/AmplifierHybrid •BNCPackages
APPLICATIONS •AnalyticalChemistry •Spectrophotometry •Densitometers •Photometry/Radiometry •Spectroradiometry •MedicalInstrumentation •LiquidChromatography
CUSTOMIZED CAPABILITIESCurrentexistingstandardphotodiodescanbemodifiedbyaddingvariousopticalfilter(s),tomatchyourspecificspectralrequirements.Thefilterscan
eitherreplacethestandardglasswindowsorbeusedinconjunctionwiththeglasswindow,dependingonthespecificrequirementand/ornatureof
thefilter.Customerfurnishedopticalfilterscanalsobeincorporatedinthepackage.Thefollowingareamongafewoftheopticalfiltertypesavailable.
Thesecoloredglassfiltersaregroupedintofourmajorcategories:ShortpassFilters,LongpassFilters,BandpassFilters,andNeutralDensityFilters.
WindowsarealsoavailablewithCustom Thin Film, Anti-reflective,Cut-on and Cut-off Filter Coatings.
ALL PHOTODIODES WITH OR WITHOUT FILTERS CAN BE CALIBRATED IN HOUSE FOR RESPONSIVITY FROM 200 NM TO 1100 NM IN 10 NM
STEPS AS WELL AS SINGLE POINT CALIBRATION. ALL OPTICAL CALIBRATIONS ARE NIST TRACEABLE.
TheDetector-Filtercombinationseriesincorporatesafilterwithaphotodiode
to achieve a tailored spectral response. OSI Optoelectronics offers a
multitudeofstandardandcustomcombinations.Uponrequest,alldetector-
filter combinations can be provided with a NIST traceable calibration
data specified in terms of Amps/Watt, Amps/lumen, Amps/lux or Amps/
footcandle.
Amongmanypossiblecustomcombinations, followingarea fewdetector-
filtercombinationsavailableasstandardparts.
PIN-10DF-isa1cm2activearea,BNCpackagedetector-filtercombination,
optimized to achieve a flat responsivity, from 450 to 950 nm. This is the
spectral response required for radiometric measurements. This type of
detectorhasseveraladvantagesoverthermopile,suchassensitivity,which
isaboutathousandtimeshigher,aswellas10timesmorestability.
PIN-10AP -isa1cm2activearea,BNCpackagedetector-filtercombination
whichduplicatestheresponseofthemostcommonlyavailableopticalaid;
thehumaneye. Theeye sensesbothbrightnessandcolor,with response
varyingasafunctionofthewavelength.Thisresponsecurveiscommonly
knownas theCIEcurve.TheAP filtersaccuratelymatch theCIEcurve to
within4%ofarea.
PIN-555AP-hasthesameopticalcharacteristicsasthePIN10-AP,withan
additionaloperationalamplifierinthesamepackage.Thepackageandthe
opampcombinationisidenticaltoUDT-555Ddetector-amplifiercombination
(Photops™).
PIN-005E-550F - uses a low cost broad bandpass filter with peaktransmissionat550nmtomimictheCIEcurveforphotometricapplications.
ThepassbandissimilartotheCIEcurve,buttheactualslopeofthespectral
responsecurveisquitedifferent.Thisdevicecanalsobeusedtoblockthe
nearIRportionofthespectralrange,700nmandabove.
PIN-005D-254F - is a 6mm2 active area,UVenhancedphotodiode-filter
combinationwhichutilizesanarrowbandpassfilterpeakingat254nm.
36
Detector-Filter Combination SeriesTypical Electro-Optical Specifications at TA=23ºC
300 400 500 600 700 800 900 1000 1100
‡Pointbypointfrom450nmto950nm.§PIN-555APisaDetector/OperationalAmplifierhybrid.ForOp-Ampspecifications,pleaseseep.29.¶Formechanicaldrawingspleaserefertopages61thru73.*=254nm**Non-condensingtemperatureandstoragerange,Non-condensingenvironment.***AreawithinCIECurve
Mod
el N
um
ber
Active Area Spectral Match
Responsivityat
550nm
Capacitance(pF)
ShuntResistance
(MΩ)
NEP(W/√Hz)
Rise Time (µs)
Temp.Range(˚C)
PackageStyle ¶
Are
a (m
m2)
Dim
ensi
ons
(mm
)
λp(nm) (A/W) mA/Lum 0 V -10 mV -10mV
550 nm
0 V550 nm
50 Ω
Oper
atin
g
Sto
rage
typ. typ. typ. typ. typ. typ.
Detector Filter Combination SeriesPIN-10DF
100 11.28 φ
± 7% ‡ 0.15 ---
1500 20
1.9 e-13 1.0
0 ~
+70
-25
~ +
85
13 / BNCPIN-10AP-1
4%*** 0.27 0.4 1.1 e-130.15
PIN-555AP-1§
0.1*
33 / Special
PIN-005E-550F5.7 2.4 sq. ---
0.23---
200 500 2.5 e-14 5 / TO-5
PIN-005D-254F 0.025* 100 300 3.0 e-13* 18 / TO-5
Typical Spectral Response
300 400 500 600 700 800 900 1000 1100
300 400 500 600 700 800 900 1000 1100
300 400 500 600 700 800 900 1000 1100
Typical Spectral Response
Typical Spectral Response Typical Spectral Response
37World Class Products - Light Sensing Solutions
Series EEye Response Detectors
Series E photodiodes are Blue-enhanced detectors with high quality color-correcting filters. The resulting spectral response approximates that of the human eye.
InadditiontotheSeriesEphotodiodeslisted,OSIOptoelectronics
can provide other photodiodes in this catalog with a variety of
opticalfilters.
Luxlx (lm/m2)
PhotPh (lm/cm2)
Foot-candlefc (lm/ft2)
Watt per square cm*
W/cm2
1 1.000 x 10-4 9.290 x 10-2 5.0 x 10-6
1.000 x 104 1 9.290 x 102 9.290 x 10-2
1.076 x 101 1.076 x 10-3 1 5.0 x 10-5
2.0 x 105 1.0 x 101 1.9 x 104 1
Mod
el N
um
ber
Active Area
Responsivity(nA Lux-1)
Dark Current(nA)
NEP(WHz-1/2)
Capacitance(pF)
ShuntResistance
(MΩ)**
Reverse Voltage
(DC) Spectral Curve
Temp.Range(˚C)
PackageStyle ¶
Are
a (m
m2)
Dim
ensi
ons
(mm
)
550 nmVR=0
Oper
atin
g
Sto
rage
min. typ. max. typ. typ. Vr=0Vmax.
Vr=12Vmax. min. typ. max.
OSD-E SeriesOSD1-E 1 1.0 x 1.0 1 2.2 1 0.2 1.5 x 10-14 35 7 250 1000
15
1
-25
~ +
85
-40
~ +
120
7 / TO-18
OSD3-E 3 2.5 x 1.2 3 6.6 2 0.5 1.8 x 10-14 80 20 100 700 1 7 / TO-18
OSD5-E 5 2.5 φ 5 11 2 0.5 1.9 x 10-14 130 35 100 600 1 5 / TO-5
OSD15-E 15 3.8 x 3.8 15 33 10 2 5.2 x 10-14 390 80 50 80 1 5 / TO-5
OSD60-E 100 11.3 φ 30 56 30 8 1.2 x 10-13 2500 520 2 10 2 69 / TO-8
Characteristicsmeasuredat22ºC(±2)andareversebiasof12voltsunlessotherwisestated.**ShuntResistancemeasuredat+/-10mV.¶Formechanicaldrawingspleaserefertopages61thru73.
Unit Conversion Table for IlluminanceThe Series E photodiodes have been color corrected to provide
a phototopic eye response. These devices can be used as low
illuminancemonitors,i.e.visiblelightmeasurementinstrumentsand
adjustingbrightnessofvisibledisplay.
100
90
80
70
60
50
40
30
20
10
0
CIE Curve vs. E Type Parts
Rel
ativ
e R
esp
ons
e (%
)
Wavelength (nm)
CURVE #1
CURVE #2
CIE CURVE
2
1
CIE
350 450 550 650 750 850 950*Totalirradiance(measuredvalue)bytheCIEstandardlightsource“A”.
FEATURES •HumanEyeResponse •TOCanPackages
APPLICATIONS •Photometry/Radiometry •MedicalInstrumentation •AnalyticalChemistry
CIE Curve vs. E Type Parts
38
Dual Sandwich Detector SeriesTwo Color Photodiodes
FEATURES •Compact •HermeticallySealed •LowNoise •WideWavelengthRange •RemoteMeasurements •w/TEC
APPLICATIONS •FlameTemperaturesensing •Spectrophotometer •Dual-wavelengthdetection •IRThermometersforHeat Treating,inductionheating, andothermetalparts processing
Dual Sandwich Detectors or Two Color Detectors are mostly employed forremote temperaturemeasurements. The temperature ismeasuredby taking theratio of radiation intensities of two adjacent wavelengths and comparing themwiththestandardblackbodyradiationcurves.Theadvantagesofopticalremotemeasurement have definitely made these devices the perfect match for thistype of measurements. They are independent of emissivity and unaffected bycontaminantsinthefieldofviewormovingtargets.Inaddition,measurementsoftargetsoutof thedirect lineofsightandtheability tofunctionfromoutsideRF/EMI interferenceor vacuumareas are possible. They also have the advantagesofovercomingobstructedtargetviews,blockages fromsight tubes,channelsorscreens, atmospheric smoke, steam, or dust, dirty windows as well as targetssmallerthanfieldofviewand/ormovingwithinthefieldofview.Thesedetectorscan also be used in applications where wide wavelength range of detection isneeded.
OSIOptoelectronicsoffers three typesofdual sandwichdetectors.TheSilicon-Siliconsandwich, inwhichonesiliconphotodiode isplacedontopof theother,with the photons of shorter wavelengths absorbed in the top silicon and thephotons of longer wavelengths penetrating deeper, absorbed by the bottomphotodiode. For applications requiring awider rangeofwavelengthbeyond1.1µm,an InGaAsphotodiodereplacesthebottomphotodiode.TheSilicon-InGaAsversionisalsoavailablewithatwostagethermo-electriccoolerformoreaccuratemeasurementsbystabilizingthetemperatureoftheInGaAsdetector.
Alldevicesaredesignedforphotovoltaicoperation (nobias),however, theymaybebiasedifneeded,tothemaximumreversevoltagespecified.Theyareidealforcouplingtoanoperationalamplifierinthecurrentmode.Forfurtherdetailsrefertothe“PhotodiodeCharacteristics”sectionofthiscatalog.
Typical Spectral Response
Typical Spectral Response
39World Class Products - Light Sensing Solutions
Dual Sandwich Detector SeriesTypical Electro-Optical Specifications at TA=23ºC
§@870nm‡Thermo-ElectricCoolerandThermistorSpecificationsarespecifiedinthetablesbelow.¶Formechanicaldrawingspleaserefertopages61thru73.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.
Mod
el N
um
ber
Det
ecto
r El
emen
tActiveArea
SpectralRange(nm)
Pea
kW
avel
ength
Res
pon
sivi
ty
Cap
acit
ance
ShuntResistance
NEPD*
@ peak
Rev
erse
Vol
tage Rise
Time(μs)
Temp*Range(°C)
Pac
kage
Sty
le
Dim
ensi
on (
mm
)
nm
λp 0 V-10 mV
0V, λp 0V, λp
V 0 V50 ΩλP
Oper
atin
g
Sto
rage
A / W pF MΩ (W/√Hz) (cm√Hz/W)
typ. typ. typ. min. typ. typ. typ. max. typ.
Non-Cooled
PIN-DSSSi (top)
2.54 φ400-1100 950 0.45
70 50 5001.3 e -14 1.7 e +13
510
-40
~ +
100
-55
~ +
125
17 /TO-5
Si 950-1100 1060 0.12 4.8 e -14 4.7 e +12 150
PIN-DSInSi (top) 2.54 φ 400-1100 950 0.55 § 450 150 1.9 e -14 § 1.2 e +13 § 5 4
InGaAs 1.50 φ 1000-1800 1300 0.60 300 1.0 2.1 e -13 8.4 e +11 2 4
Two Stage Thermoelectrically Cooled ‡
PIN-DSIn-TECSi (top) 2.54 φ 400-1100 950 0.55 § 450 150 1.9 e -14 § 1.2 e +13 § 5 4
-40
~ +
100
-55
~ +
125
24 /TO-8
InGaAs 1.50 φ 1000-1800 1300 0.60 300 1.0 2.1 e -13 8.4 e +11 2 4
Thermistor Specifications
Two Stage Thermo-electric Specifications
PARAMETER CONDITION SPECIFICATION
Temperature Range --- -100 ºC to +100 ºC
Nominal Resistance --- 1.25 KΩ @ 25 ºC
Accuracy
-100 ºC to -25 ºC ± 6.5 ºC
-25 ºC to +50 ºC ± 3.5 ºC
@ 25 ºC ± 1.5 ºC
+50 ºC to +100 ºC ± 6.7 ºC
PARAMETER SYMBOL CONDITION SPECIFICATION
Maximum Achievable Temperature Difference ΔTMAX (°C)I = IMAXQC = 0
Vaccum 91
Dry 83
Maximum Amount Of Heat Absorbed At The Cold Face QMAX(W) I = IMAX, Δ T= 0 0.92
Input current In Greatest ΔTMAX IMAX (A) --- 1.4
Voltage At ΔTMAXVMAX (V) --- 2.0
40
Multi-Element Array SeriesPlanar Diffused Silicon Photodiodes
FEATURES •CommonSubstrateArray •UltraLowCrossTalk •UVEnhanced(A5V-35UV) •LowDarkCurrent •LowCapacitance •Solderable
APPLICATIONS •LevelMeters •OpticalSpectroscopy •MedicalEquipment •HighSpeedPhotometry •ComputedTomographyScanners •PositionSensors
Typical Shunt Resistance vs. Temperature
Multichannel array photodetectors consist of a number of single element photodiodes
laidadjacenttoeachotherformingaone-dimensionalsensingareaonacommoncathode
substrate.Theycanperformsimultaneousmeasurementsofamovingbeamorbeamsof
manywavelengths.Theyfeaturelowelectricalcrosstalkandsuperhighuniformitybetween
adjacent elements allowing very high precision measurements. Arrays offer a low cost
alternativewhenalargenumberofdetectorsarerequired.Thedetectorsareoptimizedfor
eitherUV,visibleornearIRrange.
They can be either operated in photoconductive mode (reverse biased) to decrease the
response time, or in photovoltaicmode (unbiased) for low drift applications. A2V-16 can
becoupled toanyscintillatorcrystal formeasuringhigh-energyphotons in theX-rayand
gammaray regionofelectromagneticspectrum. Inaddition, theyhavebeenmechanically
designed,sothatseveralofthemcanbemountedendtoendtoeachotherinapplications
wheremorethan16elementsareneeded.
Typical Spectral Response
Typical Capacitance vs. Reverse Bias Voltage
Figure11inthe“PhotodiodeCharacteristics”sectionofthiscatalogprovidesadetailed
circuitexampleforthearrays.
41World Class Products - Light Sensing Solutions
Multi-Element Array SeriesTypical Electro-Optical Specifications at TA=23ºC
Thechipsareequippedwith2"longbaretinnedleadssolderedtoallanodesandthecommoncathode.‘V’suffixindicatesthedeviceisoptimizedfor‘photovoltaic’operation.‘C’suffixindicatesthedeviceisoptimizedfor‘photoconductive’operation.¶Formechanicaldrawingspleaserefertopages61thru73.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.** λ =254nm
Mod
el N
um
ber
Num
ber
of
Elem
ents Active Area
Per Element
Pit
ch (
mm
)
Responsivity(A/W)
Shunt Resistance
(MΩ)
Dark Current
(nA)
Capacitance(pF)
NEP(W / √Hz)
Temp.Range*(˚C)
PackageStyle ¶
Are
a (m
m2)
Dim
ensi
ons
(mm
) 970nm -10 mV -10 V 0 V -10 V 0 V970nm
-10 V970nm
Oper
atin
g
Sto
rage
typ. typ. typ. typ. min. typ.
Photoconductive ArraysA5C-35 35
3.9 4.39 x 0.89 0.99 0.65 --- 0.05 --- 12 --- 6.2 e-15
-30
~ +
85
-40
~ +
125
54 / 40 pin DIPA5C-38 38
Photovoltaic ArraysA2V-16 16 1.92 1.57 x 1.22 1.59 0.60 1000 --- 170 --- 4.8 e-15 --- 53 / PCB
A5V-35 353.9 4.39 x 0.89 0.99 0.60 1000 --- 340 --- 4.8 e-15 --- 54 / 40 pin DIP
A5V-38 38
A2V-76 76 1.8 6.45 x 0.28 0.31 0.50 500 --- 160 --- 8.2 e-15 --- 52 / Ceramic
UV Enhanced Array (All Specifications @ λ =254 nm, VBIAS= -10V)A5V-35UV 35 3.9 4.39 x 0.89 0.99 0.06** 500 --- 340 --- 6.8 e-14 --- 54 / 40 pin DIP
42
2
MΩ
2
Solderable Chip SeriesPlanar Diffused Silicon Photodiodes
FEATURES •LargeActiveAreas •VariousSizes •HighShuntResistance •WithorWithoutLeads
APPLICATIONS •SolarCells •LowCostLightMonitoring •DiodeLaserMonitoring •LowCapacitance
The Solderable photodiode chip seriesofferalowcostapproachtoapplicationsrequiringlargeactiveareaphotodetectorswithorwithoutflyingleadsforeaseof
assembly and / or situations where the detector is considered “disposable”.
They have low capacitance, moderate dark currents, wide dynamic ranges
andhighopen circuit voltages. Thesedetectors are availablewith two3” long
leads soldered to the front (anode) and back (cathode). There are two types
of photodiode chips available. “Photoconductive” series, (SXXCL) for low
capacitanceand fast responseand“Photovoltaic”series (SXXVL) for lownoise
applications.
All of the devices are also available in chip form without any leads. For ordering subtract suffix ‘L’ from the model number, e.g. S-100C.
For large signal outputs, the detectors can be connected directly to a current
meteroracrossaresistorforvoltagemeasurements.Alternately,theoutputcan
bemeasureddirectlywithanoscilloscopeorwithanamplifier.Pleaserefertothe
“PhotodiodeCharacteristics”sectionforfurtherdetails.
2
MΩ
22
MΩ
22
MΩ
2
Typical Spectral Response Typical Dark Current per Unit Area vs. Bias Voltage
Typical Shunt Resistance vs. Temperature Typical Capacitance per Unit Area vs. Bias Voltage
43World Class Products - Light Sensing Solutions
Solderable Chip SeriesTypical Electro-Optical Specifications at TA=23ºC
§Alloftheabovebarechipsareprovidedwithtwo3"long29-30AWGinsulatedcolorcodedleadsattachedtothefrontforanode(RED)andtothebackforCathode(BLACK).Theyarealsoavailableinchipformonly(Leadless).ForOrderingsubtractSuffix‘L’fromtheModelNumber,i.e.S-100C.
All chip dimensions in inches.
Active Area
Chip size mm
(inches)
Peak ResponsivityWavelength
Responsivityat λp
ShuntResistance
(MΩ)
DarkCurrent
(nA)
Capacitance(pF)
Area mm2
(inches2)
Dimensions mm
(inches)
λp(nm) A/W -10 mV -5 V 0 V -5 V
typ. min. typ. min. max. typ. typ.Mod
el N
um
ber
S-4CL § 4.7(0.007)
1.7 x 2.8(0.07 x 0.11)
1.9 x 4.1(0.08 x 0.16)
970 0.60 0.65
--- 20 --- 15
S-4VL 10 --- 370 ---
S-10CL 9.6(0.015)
2.3 x 4.2(0.09 x 0.17)
2.5 x 5.1(0.10 x 0.20)
--- 40 --- 30
S-10VL 8 --- 750 ---
S-25CL 25.8(0.04)
5.1 x 5.1(0.20 x 0.20)
5.5 x 6.0(0.22 x 0.24)
--- 100 --- 95
S-25VL 5 --- 2100 ---
S-25CRL 25.4(0.039)
2.5 x 10.1(0.10 x 0.40)
3.4 x 10.5(0.13 x 0.41)
--- 100 --- 95
S-25VRL 5 --- 2100 ---
S-50CL 51.0(0.079)
2.5 x 20.3(0.10 x 0.80)
3.4 x 20.6(0.13 x 0.81)
--- 300 --- 200
S-50VL 3 --- 4000 ---
S-80CL 82.6(0.128)
4.1 x 20.1(0.16 x 0.79)
5.2 x 20.4(0.21 x 0.80)
--- 500 --- 300
S-80VL 2 --- 6000 ---
S-100CL 93.4(0.145)
9.7 x 9.7(0.38 x 0.38)
10.5 x 11.00(0.42 x 0.43)
--- 600 --- 375
S-100VL 1.0 --- 8500 ---
S-120CL 105.7(0.164)
4.5 x 23.5(0.18 x 0.93)
5.5 x 23.9(0.22 x 0.94)
--- 800 --- 450
S-120VL 0.5 --- 10000 ---
S-200CL 189.0(0.293)
9.2 x 20.7(0.36 x 0.81)
10.2 x 21.0(0.40 x 0.83)
--- 1200 --- 750
S-200VL 0.2 --- 17000 ---
44
BI-SMTBack-Illuminated Silicon Photodiodes
TheBI-SMTproductseriesaresinglechannelback-illuminatedsiliconphotodiodes
specificallydesigned tominimize ‘dead’ areasat theedgeof thedevice.Each
deviceisdesignedonapackagewithdimensionsverysimilartothechipitself.
Thisdesignallowsformultipledetectorstobearrangedinatiledformatandoffers
easeofcouplingtoascintillator.
FEATURES •ChipSizePackage •EaseofcouplingtoScintillator •PatternedElectrodes
APPLICATIONS •X-RayInspection •ComputedTomography •GeneralIndustrialUse
Mod
el N
um
ber
Active Area
Pea
k
Res
pon
sivi
ty
Wav
elen
gth
Responsivityat
540nm
Responsivityat
920nm
Capacitance(pF)
DarkCurrent
(nA)
ShuntResistance
(MΩ)ReverseVoltage
(V)
RiseTime(µs)
Temp*Range(°C)
Pac
kage
Sty
le ¶
Are
a (m
m2)
Dim
ensi
ons
(mm
)
λp(nm) (A/W) (A/W) 0 V
1 KHz-10 mV -10mV
0V, 1 KOhm, 650nm
Oper
atin
g
Sto
rage
typ. min. typ. min. typ. typ. typ. max. typ. max. typ.
33BI-SMT 5.76 2.4 x 2.4
920 0.30 0.35 0.53 0.59
50 .02 .5 500
10
10
-20
~+
60
-20
~+
80 SMT55BI-SMT 19.36 4.4 x 4.4 200 .04 2 250 20
1010BI-SMT 88.36 9.4 x 9.4 900 .16 10 1 20
Rel
ativ
e S
ensi
tivity
(%)
Position on Photosensitive Area (um)
0 1000 2000 3000
100.0
80.0
60.0
40.0
20.0
00
Typical Spectral Response (TA=25ºC) Typ. Sensitivity Uniformity (TA=25ºC, λ=650nm, Vr=OV, 50µm Spot)
Rel
ativ
e S
ensi
tivity
(%)
Position on Photosensitive Area (um)
0 1000 2000 3000
100.0
80.0
60.0
40.0
20.0
00
45World Class Products - Light Sensing Solutions
BI-SMTBack-Illuminated Silicon Photodiodes
Dimensions (inches)
Model Number A B C D E F
33BI-SMT 0.118 0.11 0.031 0.02 0.043 0.024
55BI-SMT 0.197 0.189 0.051 0.039 0.0825 0.024
1010BI-SMT 0.394 0.386 0.051 0.039 0.163 0.059
0.004” 0.005”
Pad Assignments:Cathode: 1, 3, 5, 7
Anode: 2, 4, 6, 8
BI-SMT Mechanical Specifications
0.004” 0.005”
46
Avalanche PhotodiodesUltra High Gain Silicon Photodetectors
FEATURES •HighResponsivity •HighBandwidth/FastResponse •LowNoise •LowBiasVoltage •HermeticallySealedTO-Packages
APPLICATIONS •HighSpeedOpticalCommunications •LaserRangeFinder •BarCodeReaders •OpticalRemoteControl •MedicalEquipment •HighSpeedPhotometry
SiliconAvalanchePhotodiodesmakeuseofinternalmultiplicationtoachieve
gain due to impact ionization. The result is the optimized series of high
Responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics
offersseveral sizesofdetectors thatareavailablewith flatwindowsorball
lensesforopticalfiberapplications.
*1:Areainwhichatypicalgaincanbeobtained.
Product Model
Active Area Responsivity
@Gain M λ = 800 nm
(A/W)
DarkCurrent
Gain M
(nA)
Ct
Gain M
(pF)
Q.E.
M = 1 λ = 800
nm
(%)
BreakdownVoltage
100µA
(V)
TemperatureCoefficient
ofBreakdown
Voltage
(V/°C)
Bandwidth
-3dBGain Mλ = 800
nm(MHz)
Excess Noise Figure
Gain Mλ = 800
nm
GainM
λ = 800 nm
Sto
rage
Tem
per
ature
(°C
)
Oper
atin
gTe
mper
ature
(°C
)
Pac
kage
Sty
le *
2
Dia
met
er*1
(m
m)
Are
a (m
m2)
Typ Max Typ Max
APD02-8-150-T52 0.2 0.03
50
0.05 1 1.5 75 150 250 0.45 1000 0.3 100
-55
~ +
125
-40
~ +
100
65 / TO-52 or 66 / TO-52L
APD05-8-150-T52 0.5 0.19 0.1 1 3 75 150 250 0.45 900 0.3 10065 / TO-52 or 66 / TO-52L
APD10-8-150-T52 1.0 0.78 0.2 2 6 75 150 250 0.45 600 0.3 10065 / TO-52 or 66 / TO-52L
APD15-8-150-TO5 1.5 1.77 0.5 5 10 75 150 250 0.45 350 0.3 100 67 / TO-5
APD30-8-150-TO5 3.0 7.0 30 1 10 40 75 150 250 0.45 65 0.3 60 67 / TO-5
APD50-8-150-TO8 5.0 19.6 20 3 30 105 75 150 250 0.45 25 0.3 40 3 / TO-8
Electro-Optical Characteristics (TA = 23° C, typical values at gain listed, unless otherwise specified)
*2:PleaserefertotheSiliconAPDbrochureformoredetailedinformation.Capwithmicro-lensisavailableforsmallactiveareasize.
60
50
40
30
20
10
0
Wavelength (nm)400 500 600 700 800 900 1000 1100
Res
pons
ivity
(A/W
)
47World Class Products - Light Sensing Solutions
Res
po
nsi
tivi
ty (
A/W
)
Wavelength (nm)
Typ. Spectral Response (TA= 23˚C, M = 100)
Typ. Gain vs. Reverse Bias (TA= 23˚C, 800 nm)
Reverse Bias Voltage (V)
Gai
n
APD Series 8-150Silicon Avalanche Photodiodes, 800nm band
Typ. Capacitance vs. Reverse Bias (TA= 23˚C, f=1MHz)
Cap
acit
ance
(p
F)
Reverse Bias Voltage (V)
APD50-8-150
APD30-8-150
APD15-8-150
APD10-8-150
APD05-8-150
APD02-8-150
Typ. Dark Current vs. Reverse Bias (TA= 23˚C)
APD50-8-150APD30-8-150
APD15-8-150
APD10-8-150
Dar
k C
urr
ent
(pA
)
Reverse Bias Voltage (V)
APD05-8-150 APD02-8-150
100%
80%
60%
40%
20%
0%
Res
pons
ivity
(A/w
)
Wavelength (nm)400 500 600 700 800 900 1000 1100
Typ. Quantum Efficiency vs. Wavelength (TA= 23˚C)
Qu
antu
m E
ffici
ency
Wavelength (nm)
48
Segmented Photodiodes (SPOT Series)Position Sensing Detector (PSD)
FEATURES •HighAccuracy •ExcellentResolution •High-SpeedResponse •UltraLowDarkCurrent •ExcellentResponseMatch •HighStabilityoverTimeandTemperature
APPLICATIONS •MachineToolAlignment •PositionMeasuring •BeamCentering •SurfaceProfiling •Targeting •GuidanceSystems
The SPOT Series are common substrate photodetectors segmented into either two
(2)orfour(4)separateactiveareas.Theyareavailablewitheithera0.005”or0.0004”
welldefinedgapbetweentheadjacentelements resulting inhighresponseuniformity
betweentheelements.TheSPOTseriesareidealforveryaccuratenullingorcentering
applications.Positioninformationcanbeobtainedwhenthelightspotdiameterislarger
thanthespacingbetweenthecells.
Spectral response range is from 350-1100nm. Notch or bandpass filters can be added to achieve specific spectral responses.
These detectors exhibit excellent stability over time and temperature, fast response
timesnecessary forhighspeedorpulseoperation,andposition resolutionsofbetter
than 0.1 µm. Maximum recommended power density is 10 mW / cm2 and typical
uniformityofresponsefora1mmdiameterspotis±2%.
The circuit on the opposite page represents a typical biasing and detection circuit set up for both bi-cells and quad-cells. For position calculations and further details, refer to “Photodiode Characteristics”
section of the catalog.
Typical Spectral Response Typical Cross-Over Characteristics
Typical Capacitance vs. Reverse Bias Voltage Typical Dark Current vs. Reverse Bias
Segmented Photodiodes (SPOT Series)Typical Electro-Optical Specifications at TA=23ºC
49World Class Products - Light Sensing Solutions
‡OverallDiameter(AllfourQuads)¶Formechanicaldrawingspleaserefertopages61thru73.Chipcenteringwithin±0.010".
Mod
el N
um
ber
Active AreaPer Element
Elem
ent
Gap
(m
m) Responsivity
(A/W)Capacitance
(pF)Dark Current
(nA)NEP
(W/Hz) ReverseVoltage
(V)
RiseTime(ns)
TempRange(˚C)
PackageStyle ¶
Are
a (m
m2)
Dim
ensi
ons
(mm
) 970 nm -10 V -10 V -10 V970 nm
-10 V780 nm
50 Ω
Oper
atin
g
Sto
rage
min. typ. typ. typ. max. typ. max. typ.
Two-Element Series, Metal Package
CD-25T 2.3 4.6 x 0.5 0.2
0.60 0.65
50@ -15V 20@ -15V1.1 e-14
30
18
-40
~ +
100
-55
~ +
125 2 / TO-5
SPOT-2D 3.3 1.3 x 2.5 0.127 11 0.15 2.0 22 41 / TO-5
SPOT-2DMI 0.7 0.6 x 1.2 0.013 3 0.05 1.0 6.2 e-15 11 40 / TO-18
SPOT-3D 2.8 0.6 x 4.6 0.025 7 0.13 2.0 9.9 e-15 25 41 / TO-5
Four Element Series, Metal Package
SPOT-4D 1.61 1.3 sq 0.127
0.60 0.65
5 0.10 1.0 8.7 e-15
30
22
-40
~ +
100
-55
~ +
125 41 / TO-5
SPOT-4DMI 0.25 0.5 sq 0.013 1 0.01 0.5 2.8 e-15 9
SPOT-9D 19.610 φ ‡
0.10260 0.50 10.0 1.9 e-14
3343 / LoProf
SPOT-9DMI 19.6 0.010 28
50
Duo-Lateral, Super Linear PSD’sPosition Sensing Detectors (PSD)
FEATURES •SuperLinear •UltraHighAccuracy •WideDynamicRange •HighReliability •DuoLateralStructure
APPLICATIONS •BeamAlignment •PositionSensing •AngleMeasurement •SurfaceProfiling •HeightMeasurements •Targeting •GuidanceSystem •MotionAnalysis
TheSuper Linear Position Sensorsfeaturestateoftheartduo-lateraltechnologyto provide a continuous analog output proportional to the displacement of the
centroidofalightspotfromthecenter,ontheactivearea.Ascontinuousposition
sensors,thesedetectorsareunparalleled;offeringpositionaccuraciesof99%over
64%ofthesensingarea.Theseaccuraciesareachievedbyduo-lateraltechnology,
manufacturing the detectors with two separate resistive layer, one located on
thetopandtheotheratthebottomofthechip.Oneortwodimensionalposition
measurements can be obtained using these sensors. A reverse bias should be
appliedtothesedetectorstoachieveoptimumcurrentlinearityathighlightlevels.
ThemaximumrecommendedpowerdensityincidentontheduolateralPSDsare1
mW/cm2 .Foroptimumperformance, incidentbeamshouldbeperpendicularto
theactiveareawithspotsizelessthan1mmindiameter.
For position calculations and further details on circuit set up, refer to the “Photodiode Characteristics” section of the catalog.
Typical Spectral Response Typical Position Detectability
Typical Capacitance vs. Reverse Bias Voltage Typical Dark Current vs. Reverse Bias
51World Class Products - Light Sensing Solutions
Duo-Lateral Super Linear PSD’sTypical Electro-Optical Specifications at TA=23ºC
†Thepositiontemperaturedriftspecificationsareforthediemountedonacopperplatewithoutawindowandthebeamattheelectricalcenterofthesensingarea.§TheDLSSeriesarepackagedwithA/RcoatedwindowsandhavealowerdarkcurrentthantheDLseries.¶Formechanicaldrawingspleaserefertopages61thru73.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.
NOTES:1.DL(S)seriesareavailablewithremovablewindows.2.Chipcenteringwithin±0.010".
«Minimumorderquantitiesapply
Mod
el N
um
ber
PositionSensing Area
Responsivity(A/W)
Position Detection
Error(µm)
Dark Current(nA)
Capacitance(pF)
RiseTime(µs) Position
Detection Drift †
(µm / °C)
Inter-electrode
Resistance (kΩ)
TempRange(˚C)
PackageStyle ¶
Are
a (m
m2)
Dim
ensi
on
(mm
) 670 nm
Over 80% of Length 64% of Sensing
Area
-15 V, SL Series-5 V, DL Series
-15 V, SL Series-5 V, DL Series
670 nm50 Ω
Oper
atin
g
Sto
rage
min. typ. typ. typ. max. typ. max. typ. typ. min. max.
One-Dimensional Series, Metal Package (VBIAS=-15V)
SL3-1 3 3 x 10.3 0.4
3 5 50 3 7 0.04 0.06 15 80
-10
~
+60
-20
~
+80
41 / TO-5
SL5-1 5 5 x 1 5 10 100 5 9 0.10 0.10 20 100 42 / TO-8
One-Dimensional Series, Ceramic Package (VBIAS=-15V)
SL3-2 3 3 x 1
0.3 0.4
3 5 50 3 7 0.04 0.06 15 80
-10
~ +
60
-20
~ +
80
48 / 8-pin DIP
SL5-2 5 5 x 1 5 10 100 5 9 0.10 0.10 20 100
SL15 15 15 x 1 15 150 300 15 25 0.60 0.1 60 300 49 / 24-pin DIP
SL30 120 30 x 4 30 150 1000 125 150 1.0 0.6 40 80 51 / Ceramic
SL76-1 190 76 x 2.5 76 100 1000 190 250 14.0 1.4 120 600 50 / Special
Two-Dimensional Series, Metal Package § (VBIAS=-5V)
DL-2 «
4 2 sq
0.3 0.4
30
30 600 10 30
0.025
0.20
5 25
-10
~ +
60
-20
~ +
80
37 / TO-8DLS-2 «
10 175 8 14 0.40DLS-2S « 14 / TO-5
DL-416 4 sq 50
50 1000 35 600.08
0.2537 / TO-8
DLS-4 25 300 30 40 0.30
DL-10 100 10 sq 100 500 5000 175 375 0.20 0.60 34 / Special
DL-20 400 20 sq 200 2000 12000 600 1500 1.00 1.0 35 / Special
Two-Dimensional Series, Ceramic Package § (VBIAS=-5V)
DLS-10 100 10 sq0.3 0.4
100 50 400 160 200 0.20 0.705 25
-10
~
+60
-20
~
+80 36 / Ceramic
DLS-20 400 20 sq 200 100 1000 580 725 1.00 1.2
Two-Dimensional Series, Low-Cost Ceramic Package (VBIAS=-5V)
DL-10C 100 10 sq0.3 0.4
100 500 5000 175 375 0.20 0.605 25
-10
~
+60
-20
~
+80
38 / Ceramic
DL-20C 400 20 sq 200 2000 12000 600 1500 1.00 1.0 39 / Ceramic
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
52
Tetra-Lateral PSD’sPosition Sensing Detectors (PSD)
FEATURES •SingleResistivityLayer •HighSpeedResponse •HighDynamicRange •VeryHighResolution •SpotSize&ShapeIndependence
APPLICATIONS •ToolAlignmentandControl •LevelingMeasurements •AngularMeasurements •3DimensionalVision •PositionMeasuring
Tetra-lateral position sensing detectors aremanufactured with one single resistive layer
for both one and two dimensional measurements. They feature a common anode and
twocathodesforonedimensionalpositionsensingor fourcathodesfor twodimensional
positionsensing.
These detectors are best when used in applications that require measurement over a wide spacial range. They offer high response uniformity, low dark current, and good position linearity over 64% of the sensing area.
Areversebiasshouldbeappliedto thesedetectors toachieveoptimumcurrent linearity
whenlargelightsignalsarepresent.Thecircuitontheoppositepagerepresentsatypical
circuitsetupfortwodimensionaltetra-lateralPSDs.Forfurtherdetailsaswellasthesetup
foronedimensionalPSDsrefertothe“PhotodiodeCharacteristics”sectionofthecatalog.
Notethatthemaximumrecommendedincidentpowerdensityis10mW/cm2.Furthermore,
typicaluniformityofresponsefora1mmspotsizeis±5%forSC-25DandSC-50Dand
±2%forallothertetra-lateraldevices.
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Typical Position Dectectability Typical Spectral Response
Typical Capacitance vs. Reverse Bias Voltage Typical Dark Current vs. Reverse Bias
53World Class Products - Light Sensing Solutions
LSC-5D « 11.5 5.3 x 2.20.35 0.42
0.040 0.01 0.10 50 0.25 2 50
-10
~+
60
-20
~+
70
47 / Plastic
LSC-30D « 122 30 x 4.1 0.240 0.025 0.250 300 3.00 4 100 46 / Plastic
Tetra-Lateral Position SensorsTypical Electro-Optical Specifications at TA=23ºC
†Risetimespecificationsarewitha1mmφspotsizeatthecenterofthedevice.¶Formechanicaldrawingspleaserefertopages61thru73.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.
Chipcenteringwithin±0.010".
«Minimumorderquantitiesapply
For further details, refer to the “Photodiode Characteristics” section of the catalog.
Mod
el N
um
ber
Position Sensing Area
Responsivity(A/W)
AbsolutePosition Detection
Error(mm)
Dark Current(µA)
Capacitance(pF)
RiseTime †(µs) Inter-
electrodeResistance
(kΩ)
TempRange(˚C)
PackageStyle ¶
Are
a (m
m2)
Dim
ensi
ons
(mm
)670 nm
Over80% of Length64% of Area
-15 V -15 V-15 V
670 nm50Ω
Oper
atin
g
Sto
rage
min. typ. typ. typ. max. typ. typ. min. max.
One-Dimensional Series, Plastic Package
Two-Dimensional Series, Metal PackageSC-4D 6.45 2.54 sq
0.35 0.42
0.080 0.005 0.050 20 0.66
3 30
0 ~
+ 7
0
-20
~ +
80
41 / TO-5
SC-10D 103 10.16 sq 1.30 0.025 0.250 300 1.00 44 / Special
SC-25D 350 18.80 sq 2.5 0.10 1.0 1625 5.00 45 / Special
SC-50D 957 30.94 2q 5.0 0.25 2.5 3900 5.00 21 / Special
5454
Sum and Difference Amplifier ModulesPosition Sensing Modules
FEATURES •OtherQD7-XXorQD50-XXareavailableuponrequest
INPUTPower supply voltage Vcc = ±4.5V min; ±15V typical; ±18V max
Photodiode bias voltage = (.91) x (VPDBIAS)
VPDBIAS = 0 TO +Vcc; Absolute maximum VPDBIAS is +Vcc
NOTE: Negative voltages applied to PDBIAS will render theQD7-0-SD or QD50-0-SD inoperative.
MAXIMUM OUTPUT VOLTAGEPositive: (+Vcc - 3V)
Negative: (- Vcc + 3V)
ENVIRONMENTALOperating temperature 0 to 70° C
Theoretical noise 15 nV/Hz½
Frequency response (-3dB): 120kHz @ VPDBIAS=0V;880nm 250kHz @ VPDBIAS=15V;880nm
Max slew rate 10V/µs
Output current limit 25 mA
Mod
el N
um
ber
Active AreaTotal
Elem
ent
Gap
(m
m) Responsivity
(A/W)Capacitance
(pF)Dark Current
(nA)
NEP(W/Hz) Reverse
Voltage(V)
RiseTime(ns)
TempRange(˚C)
PackageStyle ¶
Are
a (m
m2)
Dim
ensi
ons
(mm
) 900 nm 0 V 0 V900 nm
-30 V900 nm
50 Ω
Oper
atin
g
Sto
rage
min. typ. typ. typ. max. typ. max. typ.
‘O’ SeriesQD7-0 7 3.0 φ
0.2 0.47 0.5420 4.0 15.0 9.0 e-14
30 10
-40
~
+10
0
-55
~
+12
5 41 / TO-5
QD50-0 50 8.0 φ 125 15.0 30.0 1.3 e-13 70 / TO-8
APPLICATIONS •PositionMeasuring •BeamCentering •Targeting •GuidanceSystems
Values given as per element unless otherwise stated
QD7-0-SD or QD50-0-SD arequadrantphotodiodearrayswith associ-atedcircuitrytoprovidetwodifferencesignalsandasumsignal.Thetwo
differencesignalsarevoltageanalogsoftherelativeintensitydifferenceof
thelightsensedbyopposingpairsofthephotodiodequadrantelements.
Inadditiontheamplifiedsumofall4quadrantelementsisprovidedasthe
sumsignal.ThismakestheQD7-0-SDorQD50-0-SDidealforbothlight
beamnullingandpositionapplications.Verypreciselightbeamalignments
arepossible,andthecircuitcanalsobeusedfor targetacquisitionand
alignment.
OUTPUTWhere ix is the current from quadrant x
VT-B = -(i1 +i2) - (i3 + i4) x (104)
VL-R = -(i2 +i3) - (i1 + i4) x (104)
VSUM = -(i1 + i2 + i3 + i4) x (104)
55World Class Products - Light Sensing Solutions 55
4X4D4x4 Silicon Array Detectors
•Non-condensingtemperatureandstoragerange,Non-condensingenvironment.•AllElectro-Opticalspecificationsaregivenonaperelementbasis.•UDT-4X4D:NEPtestedat810nm*
Mod
el N
um
ber
Active Area
Pea
k
Res
pon
sivi
tyW
avel
ength
Responsivity(A/W)
Capacitance(pF)
ShuntResistance
(MΩ)
NEP(W/√Hz) Crosstalk
Temp.Range(˚C)
PackageStyle ¶
Are
a (m
m2)
Dim
ensi
ons
(mm
)
λpnm 632nm 0 V -10 mV
0 V632nm 0 V
632nm
Oper
atin
g
Sto
rage0 V
810nm*
typ. min. typ. typ. min typ. typ. typ.
4 x 4 Array Detectors
PIN-4X4D 1.96 1.4 x 1.4 850 --- 0.35 75 50 0.01 5.2e-14 1 -20 ~
+60 -20 ~
+80 Ceramic LCC
UDT-4X4D* 1.0 1.0 x 1.0 810 0.35 0.40 35 1.0 0.01 1.0e-14* 0.02% -20 ~
+60 -20 ~
+80 Ceramic LCC
FEATURES •SpeedyResponse •ExtremelyLowCross-talk •SurfaceMountDesign
APPLICATIONS •ScatteringMeasurements •PositionSensing
ThePIN-4X4D isa4by4arrayofsuperblueenhancedPhotodetectors.Ourproprietarydesignprovidesvirtuallycompleteisolationbetweenallof
the16elements.ThestandardLCCpackageallowseasyintegrationinto
your surface mount applications. Numerous applications include Ratio
andScatteringmeasurements,aswellasPositionSensing.Forcustom
packages, special electro-optic requirements,or toorder theseparts in
dieform,pleasecontactourApplicationsgroup.
0. 60
0. 50
0. 40
0. 30
0. 20
0. 10
0. 00
200 300 400 500 600 700 800 900 1000 1100
Typical Spectral Response
PIN-4X4D
UDT-4X4D
56
Topviewsareshownwithoutwindow
Allunitsininches.
PIN-4X4D
4x4 Silicon Array Detectors
Topviewsareshownwithoutwindow
Allunitsininches.
Mechanical Specifications
UDT-4X4D
57World Class Products - Light Sensing Solutions
Normalized LED Output vs. Angular Distribution
Dual Emitter / Matching Photodetector SeriesMolded Lead Frame and Leadless Ceramic Substrate
FEATURES •LeadlessceramicSubstrate •LeadFrameMoldedPackages •TwoandThreeLeadDesigns •Bi-WavelengthsLEDs •MatchingDetectorResponse
APPLICATIONS •SpO2
•Bloodanalysis •MedicalInstrumentation •RatiometricInstruments
Typical Spectral Response Typical Capacitance vs. Reverse Voltage
Normalized LED Output vs. Forward Current
TheDual LED series consists of a 660nm (red) LED and a companion
IRLED such as 880/ 895, 905, or 940nm. They are widely used for
radiometric measurements such as medical analytical and monitoring
devices. They can also be used in applications requiring a low cost
Bi-Wavelengthlightsource.Twotypesofpinconfigurationsareavailable:
1.) three leads with one common anode or cathode, or 2.) two leads
parallel back-to-back connection. They are available in two types of
packaging. Clear lead framemolded side looker, and leadless ceramic
substrate.
The matching Photodetector’ responses are optimized for maximum
responsivity at 66nmaswell as near IRwavelengths. They exhibit low
capacitance and low dark currents and are available in three different
activeareasizesinthesametwotypesofpackagingasthedualemitters:
Clearleadframemoldedsidelookerandleadlessceramicsubstrate.
58
*InBack-to-Backconfiguration,theLED’sareconnectedinparallel.«Minimumorderquantitiesapply
LED
PeakWavelength
RadiantFlux
SpectralBandwidth
ForwardVoltage
ReverseVoltage
nm nW nm V V
if=20mA if=20mA if=20mAFWHN
if=20mA if=20mA
typ. typ. typ. max. max.
Dual Emitter / Matching Photodetector SeriesMolded Lead Frame and Leadless Ceramic Substrate
Formechanicaldrawingsandpinlocations,pleaserefertopages61to77.«Minimumorderquantitiesapply
Formechanicaldrawings,pleaserefertopages61thru73.
Mod
el N
um
ber
LED’s Used PackageStyle ¶ Pin Configuration
Operating Temperature
Storage Temperature
nm ˚C ˚C
Dual Emitter Combinations «DLED-660/880-LLS-2
660
880
64 / Leadless Ceramic
2 Leads / Back to Back*
-25
~ +
85
-40
~ +
80
DLED-660/895-LLS-2 895
DLED-660/905-LLS-2 905
DLED-660/905-LLS-3 9053 Leads / Common Anode
DLED-660/940-LLS-3 940
DLED-660/880-CSL-2 880
63 / Side Looker Plastic
2 Leads / Back to Back*DLED-660/895-CSL-2 895
DLED-660/905-CSL-2 905
DLED-660/905-CSL-3 9053 Leads / Common Anode
DLED-660/940-CSL-3 940
Mod
el N
um
ber
Active Area SpectralRange Responsivity Capaci-
tance
Dark Current
(nA)
Max.ReverseVoltage
OperatingTemp.
StorageTemp.
PackageA
rea
mm
2
Dim
ensi
ons
mm nm
A / W pF -10 V V
°C °C660nm 900nm -10 V typ. 10µA
Photodiode Characteristics «
PIN-0.81-LLS
0.81 1.02 φ
350 -1100 0.33 0.55
2.0 2
20
-25
~ +
85
-40
~ +
100C
62 /LeadlessCeramic
PIN-0.81-CSL 60 / Molded LeadFrame
PIN-4.0-LLS
3.9 2.31 x 1.68 10 5
62 /LeadlessCeramic
PIN-4.0-CSL 60 / Molded LeadFrame
PIN-8.0-LLS
8.4 2.9 Sq. 25 10
62 /LeadlessCeramic
PIN-8.0-CSL 60 / Molded LeadFrame
660nm 660 1.8 25 2.4
5
880nm 880 1.5 80 2.0
895nm 8952.0
50
1.7905nm 905
935nm 9351.5 1.5
940nm 940
LED Characteristics