PJM2305PSAP-Channel Power MOSFET

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Features Fast switching Low gate charge and RDS(ON)

Low reverse transfer capacitances

Application Load switch and in PWM applicatopns

Power management

Absolute Maximum Ratings Ratings at TA =25 unless otherwise specified.

Parameter Symbol Value UnitsDrain-Source Voltage -VDS 12 V

Gate-Source Voltage VGS ±8 V

Continuous Drain Current -ID 4.1 A

Power Dissipation PD 1.4 W

Junction and Storage Temperature Range TJ, TSTG 150, -55 to 150 °C

Thermal Characteristics

Parameter Symbol Typ. Units

Maximum Junction-to-Ambient Note1 RθJA 89 °C/W

SOT-23

1

2

Gate

Source

1. Gate 2.Source 3.Drain Marking: S5

Schematic Diagram

Drain3

PJM2305PSAP-Channel Power MOSFET

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Electrical Characteristics (Ta=25 unless otherwise specified)

Parameter Symbol Test Condition Min Type Max Units

Static Characteristics

Drain-source breakdown voltage -V(BR)DSS VGS = 0V, ID =-250µA 12 V

Drain to Source Leakage Current -IDSS VDS =-12V,VGS = 0V 1 µA

Gate-body leakage current IGSS VGS= ±8V, VDS= 0V ±100 nA

Gate threshold voltage Note1 -VGS(th) VDS =VGS, ID = -250µA 0.5 0.9 V

VGS = -4.5V, ID= -3.5A 45 60 mΩ

Drain-source on-resistance Note1 RDS(on) VGS = -2.5V, ID= -3A 55 70 mΩ

VGS =-1.8V, ID= -2.0A 75 90 mΩ

Forward tranconductance Note1 gFS VDS =-5V, ID= -4.1A 6 S

Dynamic characteristics

Input Capacitance Ciss

VDS =-4V,VGS =0V,f=1MHz

740

pFOutput Capacitance Coss 290

Reverse Transfer Capacitance Crss 190

Switching Characteristics

Turn-on delay time td(on)

ID=-3.3A，VDD=-4V,

VGS=-4.5V，RGEN =1Ω,

13

nsTurn-on rise time tr 35

Turn-off delay time td(off) 32

Turn-off fall time tf 10

Total gate charge QgVDD =-4V,VGS =-4.5V,ID =-4.1A

4.5 9

nCGate-source charge Qgs VDD =-4V,VGS =-2.5V,ID =-4.1A 1.2

Gate-drain charge Qgd 1.6

Source-Drain Diode characteristics

Diode Forward voltage -VDS VGS =0V, IS=-3.3A 1.2 V

Continuous source-drain diode current

-IS 1.4 A

Note: 1. Pulse Test ; Pulse Width ≤300μs, Duty Cycle ≤2%.

PJM2305PSAP-Channel Power MOSFET

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Typical Characteristic Curves

D ——

V

-16

OutputCharacteristics TransferCharacteristics-5

-4-12

-3

-8

-2

-4-1

-0-0 -1 -2 -3 -4

-0-0.0 -2.0

DRAIN TO SOURCE VOLTAGE VDS

(V)

-0.5 -1.0 -1.5

GATE TO SOURCE VOLTAGE VGS

(V)

RDS(ON)

180

—— I200

R VDS(ON) GS

150

120

100

60

50

0-0 -2 -10 -12

0-0 -2 -4 -6-4 -6 -8

DRAIN CURRENT ID (A) GATE TO SOURCE VOLTAGE V GS

(V)

-10

IS——

SD-1.0

ThresholdVoltage

-0.8

-0.6

-1

-0.4

-0.2

-0.1-0.4 -0.8 -1.2 -1.6 -2.0

-0.025 125

SOURCE TO DRAIN VOLTAGE V SD (V)

50 75 100 AMBIENT TEMPERATURE Ta ()

I =-250uAD

V =-1.5VGS

V = -4.5V、 -4V、 -3.5V、-3V、-2.5VGS

V =-2VGS

V =-3VDS

T =100a

PulsedT =25a

Pulsed

T =25a

Pulsed

VGS=-1.8V

VGS=-2.5V

VGS=-4.5V

I =-3.3AD

T =100a

Pulsed

T =25a

Pulsed

T =100a

Pulsed

T =25a

Pulsed

(V)

I(A)

S

THRES

HOLD

VOLTAG

EV T

H

SOURCECURREN

T

DRAINCURREN

TI

(A)

I(A)

D

D

DRAINCURREN

T(m

Ω)

(mΩ)

DS(ON)

DS(ON)

ON-RES

ISTA

NCE

R

ON-RES

ISTA

NCE

R

PJM2305PSAP-Channel Power MOSFET

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Package OutlineSOT-23

Ordering InformationDevice Package Shipping

PJM2305PSA SOT-23 3000PCS/Reel&Tape

SymbolDimensions in millimeter

Min. Typ. Max.A 0.900 1.025 1.150

A1 0.000 0.050 0.100b 0.300 0.400 0.500c 0.080 0.115 0.150D 2.800 2.900 3.000

E 1.200 1.300 1.400HE 2.250 2.400 2.550e 1.800 1.900 2.000

L

0.550REFL1

0.300 0.500θ 0o 8o

1.0

0.8

2.2

1.9

1.0

0.8

SOT-23 (TO-236)

Recommended soldering pad

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PJM2305PSAP-Channel Power MOSFET

Recommended condition of reflow soldering

Recommended peak temperature is over 245 . If peak temperature is below 245 , you may adjust the following parameters:

Time length of peak temperature (longer) Time length of soldering (longer) Thickness of solder paste (thicker)

Conditions of hand soldering

Temperature: 370 Time: 3s max. Times: one time

Storage conditions

Temperature5 to 40

Humidity30 to 80% RH

Recommended periodOne year after manufacturing

Conditions of Soldering and Storage

PJM2305PSAP-Channel Power MOSFET

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Package Specifications

SOT-23 (TO-236)

30,000 pcs per box10 reels per box

120,000 pcs per carton 4 boxes per carton

3,000 pcs per reel1

2

3

Embossed tape and reel data

1Pin N

4.0

4.08.

0

G

Symbol

B

Ø 54.5±0.2C

12.3±0.3D 9.6+2/-0.3T1 1.0±0.2T2 1.2±0.2N 3.15±0.1G 1.25±0.1

AValue (unit: mm)

EF

Ø 177.8±12.7±0.2

Ø 13.5±0.2 Reel (7'')

Tape (8mm)

435

220

435

210

195

210

A

B

C

E

F

T1

D

T2

Cover Tape

Carrier Tape

The method of packaging