picosun general brochure
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ALD - Your Solution, Our Passion!Picosun Brochure 2012
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Picosun The ALD company ALD Winner technology or thin flms
There is not a single ALD company in the world with
credentials matching those of Picosun
Picosuns history and background date back to the verybeginning of the field of Atomic Layer Deposition (ALD).ALD was invented in Finland in 1974 by Dr. Tuomo Sun-tola, who today serves as Member of the Picosun Boardof Directors. Picosun founder and Chief TechnologyOfficer (CTO) Mr. Sven Lindfors has created outstandingALD systems since 1975 and is known as worlds mostexperienced ALD reactor designer.
Almost 40 years exclusively on ALD
Today Picosun combines almost 40 years of continuous,exclusive ALD system development with over 200 personyears of first hand know-how in the field. The companywas established in 2004 and our core team consists ofhighly trained academic personnel, all experts in ALD.Picosun team, described by many the best ALD teamever, has contributed to over 100 patents on ALD andour close collaboration with major industries and topresearch organizations solidifies our frontline position inthe global ALD network.
Unique scalability from research to production
Picosun is an international equipment manufacturer witha world-wide sales and service organization. We developand manufacture ALD reactors for all kinds of micro- andnanotechnology applications. Picosun provides its cus-tomers with user-friendly, reliable and productive ALDprocess tools with top level after-sales, demo coatingand process consulting services. The companys head-quarters are located in Espoo, Finland, its production fa-cilities in Masala, Finland, its US headquarters in Detroitand its Asian headquarters in Singapore. PICOSUN ALDsystems are used by leading companies and scientific
institutions across four continents.
We get it right
What makes us special in the field is our exclusive focuson ALD. We get it right, where many just struggle. Weunderstand the customers needs and can offer un-matched quality coating solutions that fulfill even themost stringent research and productivity requirements.With our uniquely compact, upscalable and versatile re-actor design, there is no hindrance to the transition fromresearch to industrial production.
As a surface controlled, self-limiting chemical vapor processing method, ALD ensures 100 % uniform, conformal, de-fect-, crack- and pinhole-free thin film growth both on large area substrates and challenging nanoscale architecturessuch as ultra-high aspect ratio trenches and high tortuosity through-porous samples. Wide range of e.g. metal oxide,nitride, sulfide, fluoride and pure (also noble) metal coatings as well as nanolaminates, graded layers, mixed oxideand doped thin films can be used in numerous applications for example in semiconductor and integrated circuits (IC)industry, MEMS/NEMS (micro/nanoelectromechanical systems), sensors, optics and optoelectronics, catalyst manu-facturing, clean and renewable energy technologies, corrosion protection, decorative coatings and antitarnishing,water purification and innovative packaging materials.
Examples of ALD applications
Picosun Board of Directors and Executive Team. From left t o right: Prof. Lauri Niinist, Mr. Timo Malinen (CO O), Mr.Sven Lindfors (CTO), Mr. Juhana Kostamo (Managing Director), Dr. Tuomo Suntola, Mr. Kustaa Poutiainen (CEO), andProf. Jorma Routti.
ALD application Role of ALD in it ALD material/s
Read heads for hard drives Passivation layer Aluminum oxide Al2O
3
MEMS devices/processes Etch stop layers Al2O3Protective layers Al
2O
3
Anti-stiction layers Titanium oxide TiO2
Hydrophobic layers Al2O3Adhesive layers Al
2O
3
Layers against friction and wear Al2O
3, TiO
2
Electrical shorting prevention Al2O
3
Charge dissipative layers Aluminum-dope d zinc oxide ZnO:Al
CMOS High-k gate dielectrics Hafnium oxide HfO2, TiO2, tantalum oxide Ta2O5,
zirconium oxide ZrO2, hafnium-silicon oxide
HfxSi
yO
Contact electrodes Tantalumcarbonitride TaCxN
y
Memories Ferroelectric materials HfO2
(orthorhombic)
Paramagnetic materials Gadolinium oxide Gd2O
3, erbium oxide Er
2O
3,
dysprosium oxide Dy2O
3, holmium oxide Ho
2O
3
Non-magnetic coupling Ruthenium, iridium
Electrodes Noble metals
Sensors Passivation of read heads, gap fill in harddrives
Al2O
3, silicon oxide SiO
2
3D packaging (IC) Through silicon vias Copper, ruthenium, titanium nitride TiN
Me di ca l a pp lic atio ns Bi oco mp ati bl e ma te ria ls Ti O2
Flat panel electroluminescentdisplays
Light emitting layer and passivation layers Doped (e.g. manganese, erbium) zinc sulfideZnS (light emitting layer) and Al
2O
3(passivation
layers)
Crystalline silicon solar cells Surface passivation Al2O3CIGS thin film solar cells Buffer layers Zinc-manganese oxide Zn
xMn
yO
Transparent conductive oxide (TCO) layers ZnO:Al
C or ro sio n p ro te cti on Co rro si on p ro te cti on fi lm o n t he s ur fa ce Ta2O5, Al2O3Water purification membranes Antibacterial layer ZnO, TiO
2
Recyclable, paper/cardboard-based packaging materials
Gas/moisture diffusion barrier Al2O3
Fuel cells Catalytes Palladium, platinum, rhodium
Optical applications Microchannel plates (e.g. X-ray optics) reflec-tive coating
Iridium
Fresnel-zone lenses for X-ray optics I ridium
Decorative coatings Colored, "metallic" films Al2O
3, TiO
2
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ALD application Role of ALD in it ALD material/s
Anti-tarnisning Prote ction of noble metal items againstdarkening
Al2O3, TiO2
Lighting OLED (organic light-emitting diode) passiva-tion
Al2O
3
Low n layers on glass Magnesium fluoride MgF2, SiO2High n layers on glass ZnS, TiO
2, Ta
2O
5, HfO
2, ZrO
2
Window layers on glass TiO2
Glass strengthening Anti-cracking layers on glass SiO2
PICOSUN R-SERIES ALD process toolsManual or semi-automatic processing or research and development
High standard R&D requires the best equipment. PI-COSUN R-series ALD tools unique hot-wall top-flowdual-chamber design guarantees the deposition ofhighest quality ALD films with excellent uniformity evenon the most challenging structures such as through-porous samples, ultra-high aspect ratio trenches ornanoparticulate powders. Our highly functional and eas-ily exchangeable precursor sources for liquid, gaseousand solid chemicals enable particle-free processing ofa wide range of materials on wafers, 3D objects and allnanoscale features.
Although capable of serving even the most stringentoverall requirements of thin film research of the highestcalibre, PICOSUN R-series reactors are specifically de-signed for research that aims to bring its achievementsout of the laboratory, into industrial manufacturing. Un-matched versatility, speed and quality are combined witha compact, space-saving package ready to be integratede. g. to vacuum line, glove box etc. systems. R-seriesALD tools invite corporate funding -- because of theirunique scalability the results do not fall into the usualtechnology gap between research and production but canbe directly transferred into production with PICOSUN P-series. R-series ALD tools are the systems of choice for
the most productive research work.
M at er ial N on -u nifor mity(1)
Single (S)/ batch (B)
process
AI2O
30.13 % B
SiO2
0.77 % B
TiO2
0.28 % S
ZnO 0.94 % S
Ta2O
51.0 % S
HfO2
1.83 % S
Pt 3.41 % S
TiN 1.10 % S
PEALD Al2O
30.50 % S
PEALD AlN 0.62 % S
PEALD TiN 2.16 % S
PEALD TiAlN 2.87 % S
PEALD In2O3 0.87 % SPEALD ZnO 2.64 % S
Excellent film uniformities achieved in Picosun thermaland plasma (PEALD) processes.Wafer size 6, 49 point measurement.
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PICOSUN R-SERIES technical eaturesPICOSUN P-SERIES ALD process toolsManual or semi-automatic processing or research and development
Basic features
Substrate size and type 50 200 mm single wafersWafer minibatch up to 150 mm156 mm x 156 mm solar Si wafers3D objectsPowders and particlesThrough-porous and HAR samples
Proces s t emp era ture 50 500 C, hi gh er on req ues t
Substrate loading options Pneumatic lift (manual loading)Load lock with magnetic manipulator armSemi-automatic loading with handling robotCassette-to-cassette loading with cluster tools
Precursors Liquid, solid, gas, ozone, plasmaUp to 12 sources with 6 separate inlets
Measures
Weight 350 kg
Dimensions (W x H x D) Depending on optionsMinimum 146 cm x 146 cm x 84 cmMaximum 189 cm x 206 cm x 111 cm
Utilities
Power supply 400 VAC, 3 phase with N or 200-210V 3 phase, 50/60 HzFuse 3 x 16 AmpsPower depending on options
Vacuum pump Recommendation min. 35 420 m3/h, mechanical particle trap
Carrier gas 99.999 % N2
/ Ar, min 2 slm
Compressed dry air 4 5.5 bar overpressure
Cooling water Only required for dry vacuum pump andplasma generator, not for the reactor
Exhausts Vacuum pump, source cabinets
Options
PICOFLOW diffusion enhancer, QCM, RGA, UHV compatibility, N2
generator, gas scrubber, customized designs
Customer data of Al2O
3batch process in a PICOSUN P-300B batch ALD tool.
Target Measured
Thickness non-uniformity in-wafer < 1 % 1 0.51 % 1
Thickness non-uniformity in-batch < 1 % 1 0.80 % 1
Deposition rate variation batch-to-batch < 1 % 1 0.18 % 1
Added particles/ wafer (>70 nm) < 8 1-2
Refractive index @ 190 nm >1.86 >1.864
Film delamination or pinholes after HF etch no no
Film stress < 200 Mpa < 200 Mpa
Alkali contamination < 10E10 at/cm2 < 0.02E10 at/cm2
MTTM < 4 h
MTBM > 6 months
Uptime > 90 %
PICOSUN P-series and PICOBATCH define the newera of high volume ALD production. P-series ALD toolsare fully automated and capable of coating hundreds oreven thousands of wafers per hour, with several P-seriesreactors equipped with PICOBATCH system clusteredtogether and operated automatically. Picosuns ALD pro-cess tools are well known for the fact that their genericdesign allows results of research to be smoothly turnedinto production use. PICOSUN P-series ALD tools are aprime example of this, offering Picosuns trademark fast,safe, reliable, versatile and uniquely upscalable high vol-ume ALD manufacturing without compromising even thestrictest industrial quality and repeatability standards.
Excellent film uniformities in batch (thickness STD70 nm) per waferhave been achieved.
PICOSUN P-series ALD tools are production line andvacuum cluster compatible and ensure maximum, cost-efficient throughput under all conditions. Our compact,highly functional reactor design saves expensive facil-ity space whereas quick and easy maintenance resultsin minimal system downtime. Our unmatched level ofknowhow on ALD process mechanics ensures that pro-duction progresses smoothly with even the most chal-lenging precursor chemistries and substrate architec-tures. Picosuns support organization is always ready tooffer on- or off-site consulting from process chemistry tomaintenance and customization of the PICOSUN reac-tors. Prior to purchase, our demo service ensures the
reactor is optimized for 100 % fulfillment of your mostdemanding production requirements.
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Basic features
Substrate size and type 300 mm wafers in batches of 25 wafers/run
200 mm wafers in batches of 50 wafers/run
156 mm x 15 6 mm solar Si wafers in batches of 100/200 wafers/run (both sides/
back-to-back)
Up to 300 x 300 mm glass wafers in batches of 100/200 wafers/run (both sides/
back-to-back)
3D objects, e.g. steel, aluminum, plastic, silverware, watches
Powder and particle substrates
Microchannel plates and through-porous substrates
High-aspect ratio substrates (1000:1)
Continuous ALD and R2R: please contact us for more detailsProcess temperature 50 500 C
Substrate loading options Pneumatic loader, robotic loader
Precursors Liquid, solid, gas, ozone
Level sensors, cleaning and refill service
Up to 12 sources with 6 separate inlets (P-300S single wafer
tool)
Up to 6 sources with 4 separate inlets (P-300B batch tool)
Measures
Weight 700 kg
Dimensions (W x H x D) 149 cm x 191 cm x 111 cm
Utilities
Power supply 400 VAC, 3 phase with N or 200-210V 3 phase, 50/60 Hz
Fuse 3 x 16 Amps
Power depending on options
Vacuum pump Recommendation min. 420 m3/h,
mechanical particle trap
Carrier gas 99.999 % N2
/ Ar, min 2 slm
Compressed dry air 5 6 bar overpressureCooling water Only required for the dry vacuum pump
and ozone generator, not for the reactor
Exhausts Vacuum pump, source cabinets
Options
Cluster tools, automatic loading modules, gas scrubbers, chillers, nitrogen generators, factory host software con-
nectivity
PICOSUN P-300B ALD system technical eatures
PICOSUN P-300B batch ALD reactor for HVM
300 mm Si wafer coated in a PICOSUN
P-300B ALD reactor
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PICOPLASMA source systemPicosuns innovative PICOPLASMA plasma enhancedALD (PEALD) source system is based on highly advanced,ion-free remote plasma source, proven by top researchcustomers on three continents. Various excited speciessuch as oxygen, nitrogen and hydrogen radicals can begenerated to broaden the range of ALD process chem-istries especially metal and metal nitride thin filmscan be deposited at low temperatures with activatedspecies and the remote source enables processing ofthe most sensitive substrates and delicate device struc-tures without plasma damage due to very low ion countbut still high reactive species flux. With PICOPLASMA,there are also no short-circuiting problems even whendepositing metals.
PICOPLASMA source system can be mounted on exist-ing PICOSUN ALD reactors or the whole PEALD system
can be installed as one compact, small footprint deposi-tion unit of easy implementation, quick maintenance andlow cost of ownership. The system can also be fully auto-mated by integrating it into the PICOPLATFORM clustertool with cassette-to-cassette loading via a vacuum loadlock. Fast matching and stable power delivery of theplasma unit enable high yields with fast process speedand excellent film uniformity (thickness STD 0.7 % withAl
2O
3and AlN on silicon, deposited from TMA and oxy-
gen radicals) and good conformality in deep trenchesup to AR of 1:48 for oxygen plasma processes and 1:25for nitrogen/hydrogen plasma processes. In short, thenovel PICOPLASMA tool increases the already top levelversatility, customizability and upscalability of Picosunsexisting ALD systems.
PICOPLASMA technical features
Commercial Matching Network, plasma generatorand power supply integrated in one compact system,weight 22.2 kg
Mounted to the transfer chamber with connection toreaction chamber
Commercial RF plasma generator with adjustable 100 3000 W power, 1.7 3 MHz RF frequency
AC Power 208 VAC, 35 A, 3 phases, AC input current 16A max
Cooling water flow 5.71 lpm, T < 35 C
Analog (25 pin) and RS-232 (AE Bus) interfaces
Chemraz O-ring sealing
Generator MTBF > 100 000 h
Generator compliant with the following certifications:CE 73/23/EEC & 89/336/EEC, IEC/EN 61010-1, CSA
C22.2 No. 1010.1, ANSI/ISA-82.02.01, NRTL/C, SEMIS2-0302, SEMI F47, EN 55011, EN61326 and 47 CFR
Highly conformal and uniform films of PEALD TiN and TiN+Cu on high aspect ratio trenchesPICOPLASMA remote plasma source system installedon a PICOSUN R-200 ALD reactor
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PICOPLATFORM vacuum cluster toolPICOPLATFORM vacuum cluster continues the idea ofunique scalability which is inbuilt in all Picosuns prod-ucts. The system comprises of several individual ALDreactors clustered around a central vacuum robot load-ing and controlling unit, which enables automatic cas-sette-to-cassette loading between the carrier cassettesand clustered ALD tools without breaking the vacuum inbetween. Clustering with other process modules suchas pre-treatment and deposition systems is also pos-sible. First of the new PICOPLATFORM systems wasbuilt in 2008 and has already undergone and passed ourrigid testing procedures. The large customer base ofPICOSUN ALD tools and the fact that Picosun is workingclosely with the leading provider of vacuum automation
solutions to the semiconductor industry,
Brooks Automation, guarantees optimal performance,support, manufacturability and maintainability of auto-mated PICOSUN ALD systems with flexibility to meetthe unique automation requirements of any industry.The updated, next generation PICOPLATFORM sys-tem, launched to the market 2011, has also the optionfor plasma-enhanced ALD and UHV (ultra-high vacuum)compatibility, it can process Si wafers up to 300 mm /12 in diameter and the selection of depositable materi-als ranges from the conventional oxides, nitrides andsulfides to metals (including noble ones) and polymers.Most of the PICOPLATFORM system customers repre-sent the integrated circuits (IC) industry but the systemhas also been a success in solar cell industry and re-
search, which is why it is also available for square solarwafers of 156 mm x 156 mm of size.
PICOPLATFORM 200 technical features
Automatic cassette-to-cassette substrate loader for up to 25 wafers with a loader chamber, a gate valve, cooling
chamber, a wafer load lock and a dedicated dry vacuum pump for the load lock
An additional port for integrating other process equipment to the loader
Transfer chamber with a wafer handling robot
Thin film is deposited on one wafer at a time
Transport plane: 900 mm at VCE platform (SEMI-std). 1100 mm (43.31 in) per SEMI std E21 at process module side
(9.4 mm (0.37 in) above slot centerline) (for 200 mm).
Wafer sensors: Polar-reflective beam break, bottom mount
Integrated wafer aligner. Alignment mode: Rotary. Alignment time: 4.8 sec (wafer)
The reaction chamber is isolated from room atmosphere during the loading and unloading of the substrate
Leak rate: 1.0 x 10-8 Torr-l/sec He max
Maximum noise level: NC55
Environmental specifications: Class 1000 or better cleanroom ambient
Operating atmosphere temperature: 10 C to 30 C
Operating atmosphere humidity: 5% to 80 % (relative, non-condensing)Cassette to cassette automatics system: DeviceNet control network, PC based cluster control software with touch
screen. Semiautomatic system without the cassette lift is PLC-controlled with PC user interface.
E95 standard compliant software with optional host connectivity
Electricity: Single phase 200-240V, 10A (Usually supplied from the common cabinet of the clustered system)
Dimensions: 868 mm x 1147 mm x 1392.5 mm (W x D x H). Weight: 708.5 kg
PICOSUN PICOPLATFORM multipurpose ALD cluster tool
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Additional options
PICOFLOW system is used for increasing retention time of the precursors in the reaction chamber by slowing downthe speed with which the reactant gases a re pumped out from the reactor. This enables and improves the coating ofchallenging through-porous, highly tortuous, nanoporous, powderous or otherwise nanoscale complicated struc-tures by allowing the precursors more time to diffuse in and interact with the surface to be coated. PICOFLOWdiffusion enhancer system enables coating of extremely high aspect ratio samples without a risk of back-diffusion ofthe precursors into the inlet lines.
All of PICOSUN ALD systems can also be made ultra-high vacuum (UHV) compatible either by integration with apump-down chamber or by modifying the tool itself enabling pump-down down to UHV region.UHV ALD tools can be integrated with other deposition and measurement tools and make possible to reach high-quality interface between ALD films and III-V semiconductors, for example.
All of PICOSUN ALD tools can be integrated with various glove boxes to eliminate handling of moisture sensitivesubstrates in the air. Tools both with separate load locks or the standard elevator can be connected with a leak tightsealing to the glove box wall or bottom plate.Moreover, having a glove box at hand reduces possible dangers to the operator when using or storing toxic, veryvolatile, oxygen or moisture sensitive precursors.
PICOFLOW diusion enhancer
UHV compatibility
Glove box compatibility
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Main Headquarters:Picosun Oy, Tietotie 3, FI-02150 Espoo, Finland
Tel: +358 50 321 1955
Email: [email protected]: www.picosun.com
Production Facilities:Picosun Oy, Masalantie 365, FI-02430 Masala,
Finland
North American Headquarters:Picosun USA, LLC, 719 Griswold Street, Suite
820
Detroit, Michigan 48226, USATel: +1 313 967 7854
Email: [email protected]
Asian Headquarters:Picosun Asia Pte. Ltd., 1 North Bridge Road,
#12-01 High Street CentreSingapore 179094, Singapore
Tel: +65 63364502Email: [email protected]
Regional sales and support:See www.picosun.com/contact/ for details of regional sales offices.