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1
Bernd RechInstitute Silicon Photovoltaics
HZB & Technische Universität Berlin
Thanks to: Daniel Amkreutz, Christiane Becker, Silke Christiansen, Roel van de Krol,
Klaus Lips, Rutger Schlatmann, and many more colleagues at HZBEveline Rudigier-Voigt (SCHOTT AG)
Claas Helmke (MASDAR PV)
Photovoltaic towards Terawatt scaleChallenges for R&D
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Outline
PV: Opportunities & Threads
Challenges for R&D - Examples Thin Film Si Solar Fuels EMiL a new lab for
PV materials research
ConclusionsDetektoren
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Anteile erneuerbarer Energien am gesamten Endenergieverbrauch in den Jahren 2010 und 2011
3,4 3,0
6,2 8,1
5,5
6,1
9,9 10,1
5,55,8
1,9
3,2
0,4 0,40,50,4
0
5
10
15
20
25
2010 (17,1 %) 2011 (20,3 %) 2010 (10,7 %) 2011 (11,0 %) 2010 (5,8 %) 2011 (5,5 %)
Strom * Wärme * Kraftstoff
Ant
eile
in [%
]
Wasserkraft Windenergie
Biomasse Biokraftstoffe
Photovoltaik Solarthermie
Geothermie
* Biomasse: Feste und flüssige Biomasse, Biogas, Deponie- und Klärgas, biogener Anteil des Abfalls; aufgrund geringer Strommengen ist die Tiefengeothermie nicht dargestellt; Abweichungen in den Summen durch Rundungen; Quelle: BMU-KI III 1 nach Arbeitsgruppe Erneuerbare Energien-Statistik (AGEE-Stat); Hintergrundbild: BMU / Dieter Böhme; Stand: Juli 2012; Angaben vorläufig
4,5
5,8
7,4
2012erwartet
Renewables in Germany – some recent data
Sources: BMU (2010/2011)www.ag-energiebilanzen.de (2012)
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PV in Germany: 1990 - 2012
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Summary Status PV in D
Global industry (revenues > 50 Bill. €/y)c‐Si dominates the market
production growth > market growth!
„Solarbranche vor der Sonnenfinsternis“ (solar sector facing solar eclipse)Handelsblatt 14.6.2012)
PV in German electricity production:• up to 30 % peak load in 2012• 4,7 % total contribution in 2012• on sunny days more than 20 GWp
about 100.000 jobs in D (2012)(125000 in 2011)
W. Hoffmann et al., 25th EC-PVSEC, 2009
1
10
100
1,E+00 1,E+01 1,E+02 1,E+03 1,E+04 1,E+05MW accumulated
AS
P in
$/W
PEF 20%
source: NAVIGANT
1980 2005 20081990 2000
Thin Film
2012
PV can substantially contribute to the overall energy supply! However, grid integration and/or storage challenging!
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PV in Berlin today – residential home
11.5 KWp c-Si: installation Sept. 2012 „black design“: = 15 %Expected production / y: 10.000 kWhElectricity generation cost: 18 c/kWh
costs in € costs in €/Wp costs/kWh Modules 11500.00 1.00 0.10 Inverter 2500.00 0.22 0.02 Installation 7500.00 0.65 0.06 total 21500.00 1.87 0.18
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Note: Calculation done for 1000 sunshine hours. An efficiency of 20 % and 1000 sunshine hours is equivalent to a 10 % system in a region with 2000 sunshine hours.
A simple cost model
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New Devices and Materials
40%
50%
20%
III/VConc.
Siwafer
Thinfilm
Dye/organics/hybride
Cost per area
85 % of thePV market
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Next Generation Solar Energy Conversion Devices
Scientific Challenge
Fundamental knowledge and technology development based on: high quality and abundant materials @ low processing costs perfect device designs from nano- to macro-scale processing suitable for mass production catalysts functionalizing PV devices for solar fuel generation
PV towards Terawatt Scale
maximum efficient and cost-effective conversion technologies enhanced utilization (e.g. building integration, smart grids) concepts for storage of solar energy
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Outline
PV: Opportunities & Threads
Challenges for R&D - Examples Thin Film Si – technologies under
development in Adlershof Solar Fuels EMiL a new lab for
PV materials research
ConclusionsDetektoren
![Page 11: Photovoltaic towards Terawatt scale - Leibniz Institut · Photovoltaic towards Terawatt scale Challenges for R&D. Outline ... (BMU project “Topshot”) Back Contact a-Si/c-Si Hetero](https://reader034.vdocuments.site/reader034/viewer/2022050504/5f95da63ea8eff571b662a41/html5/thumbnails/11.jpg)
today mid term very long term
efficiency
long term
20 %
15 %
wide-gap Si(quantum size effects)
high efficiencythin film tandem cells
„nano“-scaledlocal contacts!
„Roadmap“
increase in grain size
„perfect“ control ofbulk and interfaces
optimised light trapping concept“
„high growth rates“
Pathways to a future Si thin film cell
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a-Si:H(n/p)
c-Si(p/n)
metallization
ZnO
a-Si:H(p+/n+)
back contact a-Si:H(n)Ev
EF
EC
10nm
band scheme
+
-
-
+
c-Si(p)
transport
passivation
Tasks: • minimize recombination losses at/near a-Si:H/c-Si interface• maximize efficiency of charge carrier transport over heterointerface
a-Si:H/c-Si Heterointerface – Model System
Remark: Highest Voc for c-Si PV (panasonic HIT) : efficiency > 23 %
B.M. George et al. Phys. Rev. Lett (2013)
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N. Mingurilli et al., Phys. Status Solidi RRL 5, No. 4, 159–161 (2011)in cooperation with ISFH (BMU project “Topshot”)
Back Contact a-Si/c-Si Hetero Junction Cell
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Cheap and Fast Si Preparation
Electron beam evaporation (e-beam)
crucible
heater
Si
Si
electron beam
Deposition rates >1μm/min
High Vacuum (not UHV) (10-7 to 10-6mbar)
No toxic gases
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Electron Beam Crystallization
Improving Si thin film material Quality
Constant current heated tungsten wire Pierce electrodes to focus the beam onto substrate [4]
D. Amkreutz et al. Progress in Photovoltaics (2011)
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Electron Beam Crystallization
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Single-side contacted a-Si/c-Si hetero-junction thin-film solar cell
Back Contact a-Si/c-Si Hetero Junction Wafer Cell
substrate (e.g. glas)
TCOa-Si:H emittera-Si:H(i) buffer
diffusion barrier (SiO2) /wetting layer (SiC)
COSIMA contactsinsulator
poly-Si absorber
* sectional view:*
Poly-c-Si thin-film cell on glassExhibiting 582 mV open-circuit-voltage
-300 -200 -100 0 100 200 300 400 500 600 700
-15
-10
-5
0
5
10
illuminated j-V Suns-VOC
j [m
A/c
m2 ]
V [mV]
Haschke et al., SolMat Vol 115, Issue C, pp 7-11, 2013
key issues:- low Jsc due to missing light trapping scheme- Defects at the buried interface (EMIL)- low FF due to, distributed Rs, solved meanwhile
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Going – 3 D in thin film Si
Very high light absorption
Additional freedom for optimisation
Removal of poor quality material
„cheap is possible“
Young Investigator Group of Christiane Becker
New Institute „NanoarchitecturesSilke Christiansen
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Going 3 D in thin film Si
In cooperation with S. Christiansen HZB&MPI ErlangenS.W. Schmitt et al. Nanoletters 2012
50 µm 3 µm
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Large-area fabrication of periodic patterns
glassSol-gel
glass
Simple large area fabrication with precisely controlled nanoscale dimensions
Sol-gel based nano-imprinted 2 D periodic light trapping structures
E. Rudigier-Voigt et al, Proc. of 24th EUPVSEC pp 2884 (2009) T. Sontheimer et al. , ICANS 2011, acc. for publication in journal of non. cryst. colids) PSS rapid research letter 2011, C. Becker et al, Nanotechnology 2012
2 µm
2 µm2 µm2 µm
Sol-gel template
1.5 µm Si 2.4 µm Si 4.1 µm Si
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Periodic arrays of Si crystals on nano-imprinted sol-gel
Arrays of free-standing Si crystals by selective etching
Removing the amorphous Si in a selective etch process
1 µm
1 µm
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New Devices, Materials & Functionsalmost all rely on thin film technology*
40%
50%
20%
III/VConc.
Siwafer
Thinfilm
Dye/organics/hybride
Cost per area
Explore the limits oftodays thin film semiconductors- nano-structures/technology- 3-D architectures
Emerging materials- Organic / Hybrids- Solid state dye cells (perovskites)- Novel electrodes (e.g. graphene)
Adaption to the solar spectrum- multi-junction cells
Adaption of the solar spectrum:(spectrum shaping)- up-conversion- down conversion
(*this includes technologies based on wafers
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Outline
PV: Opportunities & Threads
Challenges for R&D - Examples Thin Film Si – technologies under
development in Adlershof Solar Fuels – New Institute @ HZB
headed by Roel van de Krol EMiL a new lab for
PV materials research
ConclusionsDetektoren