“photoneece” cs-series - toray.jp · 1 1 positive-tone photosensitive polyimide coatings for...
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PositivePositive--Tone Photosensitive Polyimide CoatingsTone Photosensitive Polyimide Coatingsfor Lens Layer in image sensorsfor Lens Layer in image sensors
““PhotoneecePhotoneece”” CSCS--seriesseries
Toray Industries, Inc.
Introduction of the characteristic of CS-series
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Thickness :0.3μm~1.2μmResolution:Aspect ratio=3Application:[Inner lens]
[On-chip lens]
Aqueous developable positive tone PSPI (Photo Sensitive Polyimide) with high R.I., good chemical resistance and high resolution.
(1)High Refractive Index(2)Excellent Chemical Stability (3)High resolution(4)Tough product quality(5)Aqueous developable with 2.38% TMAH
CS-7500 basic properties
<Current specs >
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CS-series have the suitable characteristics for lens layer in Image Sensors
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1
2
3
4
5
Patternability
Transparency
Refractive Index
ShapeThermal stability
Adhesion strength
Liquid stability
Acrylic Inorganic CS-series
CS-7500 vs. Other Materials
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Measurement methodMeasurement method::Prism couplerPrism couplerCure ConditionsCure Conditions:280℃:280℃××55minmin((AirAir、、hotplate)hotplate)
<R.I. Dependency on wavelength>
CS-7500 basic properties
Wavelength R.I.400 1.81450 1.80500 1.80600 1.79
1.7
1.74
1.78
1.82
1.86
1.9
350 450 550 650
Wave length(nm)
Reflecti
ve Inde
xR
efra
ctiv
e In
dex
55
0
20
40
60
80
100
120
200 300 400 500 600 700 800
wavelength (nm)
T (%
)<Dependency of transparency on wavelength (@thickness 1μm)>
CS-7500 basic properties
Measurement apparatusMeasurement apparatus::Shimadzu UVShimadzu UV--180180Curing conditionsCuring conditions::300300℃×℃×55min(hotplatemin(hotplate)*)*
*Air curing(In case of N2 cure, Transparency=90%/1um@400nm)
Tran
spar
ency
(%)
66
0
10
20
30
40
50
60
70
80
90
100
300 400 500 600 700 800
wavelength (nm)
T (
%) as depo
250℃ 1min (HP, in air)
300℃ 1min (HP, in air)
Transparency maintains after heat treatment.
Effect of thermal treatment on its transparencyTr
ansp
aren
cy (%
)
77
Curing conditionsCuring conditions(Hot plate)(Hot plate)
200℃200℃××55minmin
220℃220℃××55minmin
250℃250℃××55minmin
280℃280℃××55minmin
R.I.R.I.((632nm)632nm)
Transparency Transparency ((%/1um)%/1um)500nm500nm400nm400nm 700nm700nm
1.791.79
1.801.80
1.761.76
1.791.79 9393 9797 9898
9393 9898 100100
9393 9797 100100
8585 9595 9898
<Curing conditions vs Refractive Index>
CS-7500 basic properties
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Pattern profile (after curing)
Allay pattern (2.0μm / 0.25μm) L / S pattern (1.0 / 1.0μm)
HMDS treatment 60℃×20secSpin 700rpm×10 sec and 1700rpm×120secPre bake 120℃×3min @hot plate (thickness 0.87um)Exposure1 650msec (i-line stepper, Focus=0um) : for patterningDevelopment 70 sec. Puddle development @ 2.38% TMAH sol. (thickness 0.65um)Cure 280℃×5min @hot plate (thickness 0.55um)
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Pattern profile (thiner film, after curing)
HMDS treatment 60℃×20secSpin 700rpm×10 sec and 1500rpm×120secPre bake 120℃×3min @hot plate (thickness 0.47um)Exposure1 160msec (i-line stepper, Focus=0um) : for patterningDevelopment 30 sec. Puddle development @ 2.38% TMAH sol. (thickness 0.39um)Exposure2 0.1~0.5 J/cm2(broad band @ i-line) : for bleachingCure 300℃× 5min @hot plate (thickness 0.32um)
2um line / 2um space (thickness 0.32um)
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Patterning Process of CS-7500
<Film thickness after cure:0.7μm recipe example>
HMDS 60℃×20sec
Spin 1500rpm for 120sec
Prebake 120℃×3min (Hot plate) (Thickness 1.00μm)
Exposure1 400 msec (i-line stepper, Focus=0μm):For patterning
Development 50 sec. Puddle development (Thickness 0.85μm)
(2.38%TMAH solution)
Exposure2 0.1~0.5 J/cm2(broad band @ i-line):For bleaching
Cure* 280℃× 5min (Hot plate ) (Thickness 0.70μm)
**Curing Temp. range from 2Curing Temp. range from 22200℃℃ to 300to 300℃℃
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Patterning Process of CS-7500
< Sensitivity curve >
01020
3040506070
8090
100
1 10 100 1000
Exposure time (msec)
Norm
aliz
ed
thic
kness
(%)
HMDS treatment 60℃×20secSpin 1500rpm×120secPre bake 120℃×3min @hot plate (thickness 1.00um)Exposure i-line stepper, Focus=0umDevelopment 50 sec. Puddle development @ 2.38% TMAH sol. (thickness 0.85um)
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Patterning Process of CS -7500
<Film thickness after cure:0.8μm recipe example>
HMDS 60℃×20sec
Spin 700rpm for 10 sec and 1500rpm for 30sec
Prebake 120℃×3min (Hot plate) (Thickness 1.21μm)
Exposure1 300 msec (i-line stepper, Focus=0.5μm):For patterning
Development 50 sec. Puddle development (Thickness 1.03μm)
(2.38%TMAH solution)
Exposure2 0.1~0.5 J/cm2(broad band @ i-line):For high transparency
Cure* 280℃× 5min (Hot plate ) (Thickness 0.84μm)
※※Cure ranges from 2Cure ranges from 22200℃℃ to 300to 300℃℃
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<Pattern process recipe by Mark-7>
Patterning Process of CS-7500
1. PI Coating (Mark 7)C/S
Coater recipe(Manual)
↓ STEP Time Speed Acceleration Dispense Arm ArmHMDS (HP) 60℃ X 20 s (sec) (rpm) (rpm/sec) 1 2
↓ 1 10.0 50 1000 1 Home HomeCOL 23℃ X 60 s 2 5.0 0 1000 0 Home Home
↓ 3 10.0 700 2000 0 Home HomeCOAT 4 120.0 1500 1000 0 Home Home↓ 5 2.0 0 1000 0 Home Home
Pre-Bake (HP) 1 20℃ X 180 s Dispense CS-7000 at step 1↓
COL 23℃ X 60 s↓
C/S
2.Exposure1I-line stepper(GCA 8000 DSW WAFER STEPPER)
ET 300 msec (150mJ/cm2)
Development recipefocus 0.5μm
STEP Time Speed Acceleration
(sec) (rpm) (rpm/sec)3.Development (Mark 7)/Bake
1 1.0 1000 10000 0C/S
2 3.0 1000 10000 1 7↓
3 1.0 500 10000 1 7DEV
4 1.0 100 10000 1 7
5 4.0 30 10000 1 76 36.0 0 10000 5
7 5.0 0 10000 58 5.0 500 10000 3 4 99 5.0 2000 10000 3 4 9
10 20.0 3000 10000 0Development(TMAH 2.38%)Rate:0.6 L/min
Rinse(DI water)Rate:1.2 L/minBack rinse(DI water)Rate:150 mL/min
Cup exhaust:60 PaNozzle:Stream nozzleDispense7:Developer dispense
↓C/S
Dispense
5.CureCure machine:Mark-7(TEL)Cure steps:
Atmosphere:N2
4.Exposure2PLA Broadband alighner
Exposure0.1~5J/cm2(at iline)
280℃×5 min → r.t.r.t.→