Jongha LEE (Prof. Dae-Hyeong Kim)

Photo-Triggered Facile Degradation of Non-volatile Memory

for Information Security Application

September 2017 US-Korea Nanoforum

School of Chemical and Biological Engineering

Seoul National University

Institute for Basic Science

Information Security of Personal Devices

Internet of Things

►A physically destructible memory is necessary

Nat. Nanotech., 9, 397-404 (2014)

Nat. Nanotech., 11, 566 (2016)

Transient Electronics for Security Applications

► Transient electronics: A physically destructible electronics

W, Mo, Fe

►Water-soluble non-volatile memory

UV-triggered destruction of electronics

Adv. Mater. 29, 1603169 (2017)

60 s

120 s 180 s

0 1000 2000 30000

20

40

60

80

100

Time (s)

(PAG : PEO)

ΔR

/R0

1 : 2 1 : 10 1 : 50

Complete

degradation

► Destruction under the UV light

► Photo-acid generating encapsulation technology

UV light exposure

Photo-acid generation

from PAG

Degradation of

memory

Packaging: Protect Memory function

Mg (s) + 2HCl → H2 + MgCl2

ZnO (s) + 2HCl → H2O + MgCl2

n HCl → hν

H2O

Water-soluble resistive memory

-2 -1 0 1 210

-10

10-8

10-6

10-4

Voltage (V)

Cu

rre

nt

(A)

Write “0” Write “1”

After erasure

Before erasure

Forming

Forming

► Ultrathin resistive memory (Cr/ZnO:Mn/Mg)

Cr (BE)

ZnO:Mn (RSL)

Mg (TE)

Before

destruction

50 nm

Etched Memory

(TE & RSL)

Cr (BE)

After

destruction

50 nm

Gate Memory

So

urc

e

Si tr

an

sis

tor

Dra

in

Etched

No exposure 800 nm exposure

200 μm

10M

10k

1k (Ω)

100k

1M

100G

1M

1G

1k (Ω)

Adv. Mater. 29, 1603169 (2017)

Transient wearable memory

Light-triggered Destruction of Memory

► Upconverting nanoparticles for NIR, visible light

► Information Security Memory

► Military Applications

Thank You