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PETRA Platform for SOI photonic Integrated Circuits
Tsuyoshi Horikawa, and Tohru Mogami**
1
Photonics Electronics Technology Research Association (PETRA)** Mogami is currently with the National Institute of Advanced Industrial Science and Technology (AIST)
October 26th, 2018 Tokyo Japan SOI Design Workshop
2
Acknowledgements
This paper is based on results obtained from a project
commissioned by the New Energy and Industrial
Technology Development Organization (NEDO).
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Outline
➢ Si-PIC, PETRA & New Venture
➢ PETRA Platform
➢ Process Control Monitoring
➢ AIO Core Co. Ltd.
➢ Summary
3October 26th, 2018 Tokyo Japan SOI Design Workshop
Data Traffic in the World
Cloud Computing
Data Center
Sensor
Tablet
2016 2018 20202014
20,000
10,000
0
Zett
abyt
es /
Yea
r
CAGR = 27%
CAGR = 24%
[Forecast by Cisco]
Big Data Analysis
High-Growth Data Traffic in Internet & Data Center;
➢ Drive bandwidth demand
➢ Need high-speed, low-cost, small-size interconnect
Si-PICSilicon-based Photonic Integrated Circuit
CPU with 1.2 Tbps Si-PIC
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Why Si Waveguides & SOI are
Glass Fiber
Dn ~0.1 %
Silicon WaveguideDn ~200 %
1 mm
III-V SemiconductorDn ~10 %
Index Contrast Waveguide Cross-section
Strong light confinement in Si enables Chip-scale optical integration
16-ch. Optical Interposer[Urino, JLT 2015]
Laser Diode Array
Modulator Array
DetectorArray
Waveguide Array
5 mm
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➢ Establishment: 2009
➢ Current Project: Integrated Photonics-Electronics Convergence System Technology [ IPECST ]
➢ Objective: Develop photonics electronics convergence key technology based on Si photonics
➢ Term: FY 2012~2021➢ Sponsor: METI, NEDO➢ Members: NEC, Fujitsu, OKI, Toshiba, Furukawa Electric, NEL,
NTT, AIST, OITDA [www.petra-jp.org]
Outline
➢ Si-PIC, PETRA & New Venture
➢ PETRA Platform
➢ Validation Flow & Process Control Monitoring (PCM)
➢ AIO Core Co. Ltd.
➢ Summary
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Fabrication300mm SOI
40-nm CMOS ProcessOptical PCM
DesignPhotonic Device Library
Unified library for C/O-band PSM & WDM
Compact Models, Circuit Level Sim.
ValidationWafer-Level TestingVariation Modeling
Grating Coupler Ge Photodetector Waveguide & Heater Modulator
DFV Building Blocks
O-band Wavegide loss
Wavelength (nm)
Tran
smit
tan
ce (
dB
)
Modulator
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Process of F Block
Fiber
Process Spec.
Substrate 300-mm SOI
LithographyArF immersion for waveguideDry excimer for the others
Waveguide formation
Full etching for wire-waveguideShallow etching for GCDeep etching for modulator
Implantation P-/P+/N-/N+ for modulator, detector
CMP & Wiring 2-level metal wiring on planarized Clad
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Device Parameter C-band O-band
Waveguide Propagation loss 0.4dB/cm 1.4dB/cm
Grating Coupler Coupling loss 3.5dB 2.5dB
PN Modulator 3dB Bandwidth >25Gbps >25Gbps
Ge Detector 3dB Bandwidth >25Gbps >25Gbps
4-l CWDM FilterCross talk
Insertion loss>15dB
1dB>10dB
1dB
Device Performance
0.1
1
10
2000 2005 2010 2015C-ba
nd
wav
egu
ide lo
ss(d
B/cm
)
Year
EBKrFArFArF-Immersion
G-Line100
100 Gbps (25G x 4ch.)PSM TRX Chip
PETRA
[Kurata, IEDM 2017][Horikawa, JSTQE 2018]
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Outline
➢ Silicon-based Photonic Integrated Circuit (Si-PIC)
➢ PETRA Platform
➢ Validation Flow & Process Control Monitoring (PCM)
➢ AIO Core Co. Ltd.
➢ Summary
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Automatic optical measurement unit added on electrical full-auto prober.✓ Small alignment accuracy < 0.3 mm by optical active alignment.✓ Reproducibility of optical fiber coupling <0.2 dB
Field image in GC-fiber coupling
Reproducibility in the automatic search of coupling position
From DUT XY
Fiber probe head
Optical Coupling between Wafer and Probe[Horikawa, NANOTS 2015]
Wafer-Level Testing of V Block
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Light Propagation Through Si Waveguide
Lowest TE Mode Fieldin Si Waveguide
180 200 2202
4
4.6
460 480 500
Width (nm) Height (nm)
Re
fra
ctive
in
dic
es
Re
fra
ctive
in
dic
es
𝑛𝑔𝑛𝑔
𝑛𝑒𝑛𝑒
2.2
2.4
2.6
4.2
4.4
2
4
4.6
2.2
2.4
2.6
4.2
4.4
Si Core
Clad SiO2
500 nm
✓ Mode Field Extends to Clad Area.✓ Effective Index 𝑛𝑒 Determines Light Propagation.
Width and Height -> Confinement -> 𝑛𝑒✓ Group Index 𝑛𝑔 Determines Wavelength Dispersion.
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Optical PCM
Microring resonator
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➢Microring PCMInput port
Through port
Drop port
1500 1510 1520 1530 1540
0
-10
-15
-20
Tran
smit
tan
ce (
dB
)
Wavelength (nm)
Free spectral Range (FSR)
lm lm-1lm+1
Typical drop-port spectrum for MRR
Resonant Condition for MRR
𝑛𝑒 ∙ 𝐿 = m ∙ 𝜆
𝑛𝑔 ∙ 𝐿 ∙ 𝐹𝑆𝑅 = 𝜆2
[𝐿: ring perimeter, m: integer]
4.23
4.24
4.25
4.26
1510 1520 1530 1540
ng
Resonant wavelength (nm)
4.50
4.51
4.52
4.53
4.54
4.55
1300 1310 1320 1330 1340
ng
Resonant wavelength (nm)
4.50
4.51
4.52
4.53
4.54
4.55
1300 1310 1320 1330 1340
ng
Dng/Dl = − 0.0030 nm-1
Resonant wavelength (nm)
Resonant wavelength (nm)
4.23
4.24
4.25
4.26
1510 1520 1530 1540 1550
ng
C-band R=6 mm
Dng/Dl = − 0.0027 nm-1
C-band R=10 mm
O-band R=4 mm O-band R=6 mm
Wafer-scale Variation
[Horikawa, ECOC 2017]
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1.6
0.8
0.0
-0.8
-1.6
6.0
3.0
0.0
-3.0
-6.0
Extracted and Measured Deviations
Extracted Measured
Extracted Experimental
Height deviation, 3sH 0.75 nm 0.72 nm
Width deviation, 3sW 4.3 nm 3.9 nm
≈
≈
-0.21 -0.20 -0.10 0.13
-0.38 -0.24 -0.25 -0.01 0.13 0.23 0.29 0.33
-0.36 -0.26 -0.20 -0.26 -0.16 0.10 0.27 0.27 0.54 0.46
-0.29 -0.17 -0.17 -0.23 -0.14 0.03 0.23 0.38 0.58 0.27
-0.36 -0.07 -0.25 -0.22 0.01 -0.01 0.03 0.49 0.54 0.48
-0.29 0.11 0.07 -0.23 -0.08 -0.16 0.04 0.22 0.48 0.53
-0.35 -0.04 -0.06 -0.17 -0.27 0.02 0.12 0.11
-0.46 -0.47 -0.25 -0.13
-0.15 -0.08 0.02 -0.11
-0.26 -0.30 -0.20 -0.06 0.03 -0.01 -0.03 0.09
-0.29 -0.38 -0.24 -0.07 0.06 0.13 0.14 0.07 0.15 0.26
-0.33 -0.29 -0.17 -0.02 0.08 0.18 0.22 0.26 0.37 0.43
-0.31 -0.24 -0.19 -0.07 0.02 0.10 0.19 0.34 0.52 0.54
-0.23 -0.34 -0.31 -0.14 -0.05 0.03 0.12 0.25 0.45 0.47
-0.30 -0.31 -0.22 -0.13 -0.06 0.01 0.10 0.24
-0.31 -0.36 -0.23 -0.12
1.14 1.01 1.37 0.12
-0.05 0.75 -0.98 -0.67 -0.65 -0.65 0.58 1.57
-0.09 1.20 0.00 -1.37 -1.85 -2.46 -1.65 -0.74 0.34 1.29
1.23 0.85 -0.15 -2.66 -2.93 -1.73 -2.55 -1.61 0.00 2.38
0.56 1.06 0.15 -1.91 -2.37 -1.99 -1.90 -1.04 -0.02 1.40
-2.93 -0.05 0.50 -0.74 -0.51 0.05 -0.24 1.20 1.84 1.46
-0.44 1.56 0.68 1.71 2.60 1.76 2.81 1.45
-0.98 1.15 0.97 1.14
-1.23 0.04 -0.35 -1.63
-1.23 1.85 0.83 0.82 0.30 2.09 -0.44 -0.13
-1.16 2.13 0.26 0.73 -1.48 -0.77 -0.08 1.11 1.76 -0.06
1.87 0.23 0.33 -0.90 -1.15 -1.63 -0.53 -2.37 0.66 0.16
0.44 0.85 -0.81 0.14 -3.45 -3.44 -1.85 -1.58 -0.54 1.40
0.53 -1.74 -0.21 -0.19 -0.03 -1.08 0.33 -0.75 -0.10 -0.44
1.59 0.77 0.47 0.15 -0.25 -0.70 1.24 2.03
1.80 1.20 1.84 2.43
[Horikawa, JSTQE 2017]
𝛥𝐻𝐸𝑥𝑡𝑟𝑎𝑐𝑡𝑒𝑑(nm) 𝛥𝐻𝐸𝑙𝑖𝑝𝑠𝑜, 𝑖𝑛𝑖𝑡𝑖𝑎𝑙(nm)
𝛥𝑊𝐸𝑥𝑡𝑟𝑎𝑐𝑡𝑒𝑑(nm) 𝛥𝑊𝑆𝐸𝑀 (nm)
16October 26th, 2018 Tokyo Japan SOI Design Workshop
Outline
➢ Si-PIC, PETRA & New Venture
➢ PETRA Platform
➢ Process Control Monitoring
➢ AIO Core Co. Ltd.
➢ Summary
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➢ Location:(Headquarter) Bunkyo-ku, Tokyo
➢ Capital Stock:270M yen (≒2.5M US$)
➢ Asset (Beginning): Succession of IP from PETRA
➢ Business:Production & Sales of Optical I/O Core
➢ CEO : Tomoyuki Fujita.
➢ Date of Establishment:April 17th, 2017
AIO Core Co. Ltd.
October 26th, 2018 Tokyo Japan SOI Design Workshop 18
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Summary
◆ Silicon-based PIC is promising for high-speed datatransmission.
◆ PETRA platform consists of design, fabrication, andvalidation. PETRA platform using 300-mm SOI wafersrealizes low loss waveguide devices suitable for largescale Si-PIC.
◆ Process control monitoring using microringresonators has been examined for monitoringwaveguide deviations. It is successfully demonstratedthat extracted deviations agree with that of physicalmeasurement within sub-nanometer.
October 26th, 2018 Tokyo Japan SOI Design Workshop 19
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Thank you !
October 26th, 2018 Tokyo Japan SOI Design Workshop 20