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Paper no. Wojskowa Akademia Techniczna Instytut Optoelektroniki Advanced Solid-State Lasers (27 Oct – 1 Nov 2013 – Paris, France) ATu3A.22 Room-temperature, efficient, high energy diode- side-pumped Yb:YAG oscillator M. Kaskow*, W. Zendzian, J. K. Jabczynski, J. Firak, L. Gorajek, J. Kwiatkowski, K. Kopczynski Instytut Optoelektroniki, Wojskowa Akademia Techniczna, ul. Gen. S. Kaliskiego 2, 00-908 Warszawa *e-mail: [email protected] Abstract Free-running operation in a side-pumped Yb:YAG slab laser is reported. For max. available pump pulse energy of 850 mJ the output pulses with energy of 150 mJ were obtained. The laser system provides slope efficiency of 26.9% in room-temperature operation. Simple, linear resonator Yb:YAG slab (4x4x13 mm 3 , 15% Yb) Facets cut under 1 0 angle Output energy vs. pump energy for different Yb:YAG slab temperatures Output energy vs. pump energy for different outcoupling transmissions Pulse generation delay vs. pump energy for different Yb:YAG slab temperatueres Summary Output pulse energy up to 160 mJ was achieved with slope efficiency of 26.9 %. Relatively high threshold energy (> 250 mJ) can be diminished via optimization of pump spectrum and caustics sizes, gain element dopant level and cavity parameters. The efficient operation in the Q- switching and power amplification regimes seems to be feasible. Lower laser level is populated with approx. 4% of active ions. For that reason it is crucial to provide best matching between pump region and fundamental mode of the resonator in order to mitigate reabsorption losses. Output energy vs. pump energy for different resonator lengths Pulse generation delay vs. pump energy for different resonator lenghts This research has been supported by: Polish National Science Center Project No. NCN2012/05/B/ST7/00088 Polish Ministry of Science and Higher Education Instytut Optoelektroniki WAT Ul. Gen. S. Kaliskiego 2, 00-908 Warszawa Tel.: (+48 22) 683 94 30, fax: (+48 22) 666 89 50

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Wojskowa Akademia Techniczna Instytut Optoelektroniki. Advanced Solid-State Lasers (27 Oct – 1 Nov 2013 – Paris, France) ATu3A.22. Paper no. Room-temperature, efficient, high energy diode-side-pumped Yb:YAG oscillator - PowerPoint PPT Presentation

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Paper no.Wojskowa Akademia TechnicznaInstytut OptoelektronikiAdvanced Solid-State Lasers (27 Oct 1 Nov 2013 Paris, France) ATu3A.22Room-temperature, efficient, high energy diode-side-pumped Yb:YAG oscillatorM. Kaskow*, W. Zendzian, J. K. Jabczynski, J. Firak, L. Gorajek, J. Kwiatkowski, K. KopczynskiInstytut Optoelektroniki, Wojskowa Akademia Techniczna, ul. Gen. S. Kaliskiego 2, 00-908 Warszawa*e-mail: [email protected] operation in a side-pumped Yb:YAG slab laser is reported. For max. available pump pulse energy of 850 mJ the output pulses with energy of 150 mJ were obtained. The laser system provides slope efficiency of 26.9% in room-temperature operation.

Simple, linear resonator Yb:YAG slab (4x4x13mm3, 15% Yb) Facets cut under 10 angleOutput energy vs. pump energy for different Yb:YAG slab temperatures

Output energy vs. pump energy for different outcoupling transmissions

Pulse generation delay vs. pump energy for different Yb:YAG slab temperatueresSummaryOutput pulse energy up to 160mJ was achieved with slope efficiency of 26.9%. Relatively high threshold energy (> 250mJ) can be diminished via optimization of pump spectrum and caustics sizes, gain element dopant level and cavity parameters. The efficient operation in the Q-switching and power amplification regimes seems to be feasible. Lower laser level is populated with approx. 4% of active ions. For that reason it is crucial to provide best matching between pump region and fundamental mode of the resonator in order to mitigate reabsorption losses.

Output energy vs. pump energy for different resonator lengths

Pulse generation delay vs. pump energy for different resonator lenghtsThis research has been supported by: Polish National Science Center Project No. NCN2012/05/B/ST7/00088 Polish Ministry of Science and Higher Education Project No. UMO-2012/06/M/ST/00425Instytut Optoelektroniki WATUl. Gen. S. Kaliskiego 2, 00-908 WarszawaTel.: (+48 22) 683 94 30, fax: (+48 22) 666 89 50 www.ioe.wat.edu.pl